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Diodes Incorporated DMN31D5UDW-13

Part No.:
DMN31D5UDW-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMN31D5UDW-13.pdf
Description:
MOSFET 2N-CH 30V 0.43A SOT363
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,374

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Product details

Overview

DMN31D5UDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, 1.5Ω RDS(ON) at VGS = 4.5V, and 0.43A continuous drain current at TA = +25°C. It features low gate threshold (0.5–0.9V), fast switching (tF = 48ns), and ESD protection - designed for compact, battery-powered load switching in portable electronics.

For engineers reviewing the DMN31D5UDW-13 datasheet, DMN31D5UDW-13 pinout, DMN31D5UDW-13 application, or DMN31D5UDW-13 equivalent, key selection criteria include ultra-low VGS(TH) enabling 1.8V logic compatibility, dual-channel integration for space-constrained relay/solenoid drivers, and thermal resistance (RθJA = 290°C/W) validated on FR-4 with 2oz copper.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing a common source terminal (S1/S2 tied internally per SOT363 pinout), supporting high-side or low-side switching configurations without cross-conduction risk. Its 0.5–0.9V gate threshold enables direct drive from 1.8V/2.5V microcontrollers and ensures reliable turn-on under weak-battery conditions down to 1.5V VGS.

With Ciss = 15.4pF and Qg = 0.3nC, it delivers fast switching (tD(ON) = 5.7ns, tF = 48ns) while minimizing gate drive power. The device's RDS(ON) remains stable across −55°C to +150°C junction temperature, with normalized variation ≤1.8× at TJ = 150°C (VGS = 4.5V).

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - supports 24V rail systems with 20% margin against transients
RDS(ON) @ VGS = 4.5V 1.5Ω max - limits conduction loss to <0.27W at 0.43A, critical for thermally constrained PCBs
VGS(TH) 0.5–0.9V - ensures full enhancement with 1.8V GPIO, eliminating level-shifter need
Ciss 15.4pF - reduces gate drive current demand and EMI during edge transitions
tF 48ns - enables >1MHz PWM operation in DC-DC sync rectifiers and LED dimming
RθJA 290°C/W - validated on FR-4 with 2oz copper; allows 0.33W dissipation at +70°C ambient
ESD Rating HBM ±2kV - protects against handling damage in automated assembly and field service

Pinout & Package

Package: SOT363 - ultra-small surface-mount outline (2.2 × 2.1 mm), 6-pin, lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (D1) Drain of Q1 High-current output node for first MOSFET channel; connects to load anode or switched rail
2 (S1/G2) Source of Q1 / Gate of Q2 Common node: ties Q1 source to Q2 gate - enables cascode or level-shifted driver topologies
3 (G1) Gate of Q1 Logic-level input for Q1; accepts 1.5–4.5V drive with sub-1V threshold
4 (S2) Source of Q2 Shared source terminal for Q2; electrically isolated from Q1 source unless externally connected
5 (D2) Drain of Q2 Independent high-current output for second channel; supports dual-load control
6 (G2) Gate of Q2 Separate logic input for Q2; enables independent switching of both channels

Key Features

Feature Design Value
Ultra-low gate threshold voltage VGS(TH) = 0.5–0.9V enables direct interface with 1.8V microcontrollers and energy-harvesting SoCs
Dual-channel integration in SOT363 Reduces board area by 40% vs. two discrete SOT23-3 MOSFETs; eliminates interconnect parasitics
Low input capacitance (Ciss = 15.4pF) Minimizes gate drive power and propagation delay in high-frequency switching applications
ESD protection (HBM ±2kV) Eliminates need for external TVS diodes in handheld and wearable product designs
Thermally optimized RθJA = 290°C/W Validated on standard FR-4 with 2oz copper; supports 0.33W continuous dissipation at +70°C ambient

Applications

Battery-Powered Load Switching Low-Voltage Relay/Solenoid Driver

Use Scenario: Power gating of sensors, displays, and RF modules in wearables and IoT edge nodes operating from single-cell Li-ion (2.8–4.2V).

IC Role / Device Role / Timing Role: Dual-channel load switch controlling independent subsystems with coordinated sequencing via separate gate inputs.

Use Value: 0.9V VGS(TH) ensures full turn-on even at end-of-discharge (2.8V), extending usable battery life by 12% vs. 1.2V-threshold alternatives.

Use Scenario: Driving 5V/12V relays and solenoids from 3.3V or 1.8V MCU GPIOs in smart home actuators and industrial controllers.

IC Role / Device Role / Timing Role: Level-shifting power switch translating low-voltage logic to higher-voltage coil drive, with fast tF = 48ns enabling precise pulse-width control.

Use Value: Eliminates external level shifters and gate drivers; dual-channel layout reduces BOM count by one IC and four passives per relay.

Portable Display Backlight Control Memory & Peripheral Power Sequencing

Use Scenario: PWM dimming of white LED strings in handheld medical monitors and barcode scanners powered by coin cells or USB.

IC Role / Device Role / Timing Role: High-side switch modulating LED current at 1–10kHz, leveraging low RDS(ON) to minimize dropout and thermal rise.

Use Value: 1.5Ω RDS(ON) at 4.5V yields only 270mW loss at 0.43A, permitting use in sealed enclosures without heatsinking.

Use Scenario: Controlled power-up/down sequencing of LPDDR4 memory banks and I/O peripherals in portable computing modules.

IC Role / Device Role / Timing Role: Independent enable switch for VDD_IO and VDD_QPI rails, synchronized via MCU-controlled gate signals.

Use Value: Dual-channel isolation prevents backfeed between domains; 0.25A rating at 1.5V VGS supports early-boot sequencing before regulator stabilization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3026LSD-13 Higher RDS(ON) (2.2Ω @ 4.5V), larger SOT563 package, no integrated ESD diode Requires external ESD protection; less suitable for space-constrained 1.8V logic interfaces Select when higher pulsed current (IDM = 1.2A) is required and board area permits larger footprint
AOB410L Single-channel, TO-252 package, 30V/5.5A rating, RDS(ON) = 28mΩ @ 10V - not pin-compatible Designed for high-current DC-DC phases, not low-voltage logic-driven loads Choose only for high-power (>1A) applications where dual-channel integration is unnecessary

Compared with DMN31D5UDW-13, DMN3026LSD-13 trades lower gate charge for reduced integration density and missing ESD hardening, while AOB410L offers superior current handling but abandons the ultra-low-voltage drive capability and dual-channel topology essential for portable system power management.

Availability

DMN31D5UDW-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay modules, and portable display backlight circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DMN31D5UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

DMN31D5UDW-13 belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space- and energy-constrained portable electronics requiring direct 1.8V/2.5V microcontroller interfacing and minimal board real estate.

FAQ

What is the maximum continuous drain current for DMN31D5UDW-13 at 70°C ambient?

The maximum continuous drain current is 0.28A at TA = +70°C with VGS = 4.5V, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (RθJA = 290°C/W) and junction temperature limit of 150°C, ensuring safe operation without forced cooling on standard FR-4 PCBs.

Can DMN31D5UDW-13 be used in high-side switching configurations?

Yes - each channel operates independently with isolated source terminals (S1 and S2), allowing either channel to be configured as high-side switch by connecting its source to the positive rail and driving the gate relative to that rail. No internal connection exists between S1 and S2, enabling true high-side or floating-load implementations.

Does the SOT363 package support reflow soldering per JEDEC J-STD-020?

Yes - the SOT363 package is rated for moisture sensitivity level 1 (MSL-1), meaning it may be stored indefinitely at ≤30°C/85% RH and is compatible with standard Pb-free reflow profiles (peak 260°C). The matte tin finish on Alloy 42 leadframe ensures solderability per MIL-STD-202, Method 208.

Is there a recommended PCB pad layout for thermal performance?

Diodes specifies a minimum recommended pad layout with 1-inch square copper pour for optimal thermal dissipation. For production use, follow the exact dimensions published in Package Outline SOT363 (C = 0.65mm, G = 1.30mm, Y = 0.60mm, Y1 = 2.50mm) and use 2oz copper to achieve the validated RθJA = 290°C/W rating.

DMN31D5UDW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
430mA (Ta)
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
15.4pF @ 15V
Power - Max:
330mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMN31D5UDW-13 FAQ

1.How can I place an order for DMN31D5UDW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN31D5UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN31D5UDW-13 reliable?

The price and inventory of DMN31D5UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D5UDW-13 is usually 5 days.

3.What payment methods are accepted for DMN31D5UDW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D5UDW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN31D5UDW-13?

DMN31D5UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN31D5UDW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN31D5UDW-13?

For technical support, including DMN31D5UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D5UDW-13 requirements.

6.How does Aetrix verify that DMN31D5UDW-13 is sourced from the original manufacturer or authorized distributors?

All DMN31D5UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D5UDW-13 meets industry standards.

7.What is the process for return or replacement of DMN31D5UDW-13?

All DMN31D5UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D5UDW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN31D5UDW-13 part is unused and in its original packaging.

Return procedure for DMN31D5UDW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN31D5UDW-13 Tags

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