Diodes Incorporated DMN31D5UDW-13
- Part No.:
- DMN31D5UDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN31D5UDW-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.43A SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:7,374
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN31D5UDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, 1.5Ω RDS(ON) at VGS = 4.5V, and 0.43A continuous drain current at TA = +25°C. It features low gate threshold (0.5–0.9V), fast switching (tF = 48ns), and ESD protection - designed for compact, battery-powered load switching in portable electronics.
For engineers reviewing the DMN31D5UDW-13 datasheet, DMN31D5UDW-13 pinout, DMN31D5UDW-13 application, or DMN31D5UDW-13 equivalent, key selection criteria include ultra-low VGS(TH) enabling 1.8V logic compatibility, dual-channel integration for space-constrained relay/solenoid drivers, and thermal resistance (RθJA = 290°C/W) validated on FR-4 with 2oz copper.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing a common source terminal (S1/S2 tied internally per SOT363 pinout), supporting high-side or low-side switching configurations without cross-conduction risk. Its 0.5–0.9V gate threshold enables direct drive from 1.8V/2.5V microcontrollers and ensures reliable turn-on under weak-battery conditions down to 1.5V VGS.
With Ciss = 15.4pF and Qg = 0.3nC, it delivers fast switching (tD(ON) = 5.7ns, tF = 48ns) while minimizing gate drive power. The device's RDS(ON) remains stable across −55°C to +150°C junction temperature, with normalized variation ≤1.8× at TJ = 150°C (VGS = 4.5V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V rail systems with 20% margin against transients |
| RDS(ON) @ VGS = 4.5V | 1.5Ω max - limits conduction loss to <0.27W at 0.43A, critical for thermally constrained PCBs |
| VGS(TH) | 0.5–0.9V - ensures full enhancement with 1.8V GPIO, eliminating level-shifter need |
| Ciss | 15.4pF - reduces gate drive current demand and EMI during edge transitions |
| tF | 48ns - enables >1MHz PWM operation in DC-DC sync rectifiers and LED dimming |
| RθJA | 290°C/W - validated on FR-4 with 2oz copper; allows 0.33W dissipation at +70°C ambient |
| ESD Rating | HBM ±2kV - protects against handling damage in automated assembly and field service |
Pinout & Package
Package: SOT363 - ultra-small surface-mount outline (2.2 × 2.1 mm), 6-pin, lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Q1 | High-current output node for first MOSFET channel; connects to load anode or switched rail |
| 2 (S1/G2) | Source of Q1 / Gate of Q2 | Common node: ties Q1 source to Q2 gate - enables cascode or level-shifted driver topologies |
| 3 (G1) | Gate of Q1 | Logic-level input for Q1; accepts 1.5–4.5V drive with sub-1V threshold |
| 4 (S2) | Source of Q2 | Shared source terminal for Q2; electrically isolated from Q1 source unless externally connected |
| 5 (D2) | Drain of Q2 | Independent high-current output for second channel; supports dual-load control |
| 6 (G2) | Gate of Q2 | Separate logic input for Q2; enables independent switching of both channels |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | VGS(TH) = 0.5–0.9V enables direct interface with 1.8V microcontrollers and energy-harvesting SoCs |
| Dual-channel integration in SOT363 | Reduces board area by 40% vs. two discrete SOT23-3 MOSFETs; eliminates interconnect parasitics |
| Low input capacitance (Ciss = 15.4pF) | Minimizes gate drive power and propagation delay in high-frequency switching applications |
| ESD protection (HBM ±2kV) | Eliminates need for external TVS diodes in handheld and wearable product designs |
| Thermally optimized RθJA = 290°C/W | Validated on standard FR-4 with 2oz copper; supports 0.33W continuous dissipation at +70°C ambient |
Applications
| Battery-Powered Load Switching | Low-Voltage Relay/Solenoid Driver |
|---|---|
|
Use Scenario: Power gating of sensors, displays, and RF modules in wearables and IoT edge nodes operating from single-cell Li-ion (2.8–4.2V). IC Role / Device Role / Timing Role: Dual-channel load switch controlling independent subsystems with coordinated sequencing via separate gate inputs. Use Value: 0.9V VGS(TH) ensures full turn-on even at end-of-discharge (2.8V), extending usable battery life by 12% vs. 1.2V-threshold alternatives. |
Use Scenario: Driving 5V/12V relays and solenoids from 3.3V or 1.8V MCU GPIOs in smart home actuators and industrial controllers. IC Role / Device Role / Timing Role: Level-shifting power switch translating low-voltage logic to higher-voltage coil drive, with fast tF = 48ns enabling precise pulse-width control. Use Value: Eliminates external level shifters and gate drivers; dual-channel layout reduces BOM count by one IC and four passives per relay. |
| Portable Display Backlight Control | Memory & Peripheral Power Sequencing |
|
Use Scenario: PWM dimming of white LED strings in handheld medical monitors and barcode scanners powered by coin cells or USB. IC Role / Device Role / Timing Role: High-side switch modulating LED current at 1–10kHz, leveraging low RDS(ON) to minimize dropout and thermal rise. Use Value: 1.5Ω RDS(ON) at 4.5V yields only 270mW loss at 0.43A, permitting use in sealed enclosures without heatsinking. |
Use Scenario: Controlled power-up/down sequencing of LPDDR4 memory banks and I/O peripherals in portable computing modules. IC Role / Device Role / Timing Role: Independent enable switch for VDD_IO and VDD_QPI rails, synchronized via MCU-controlled gate signals. Use Value: Dual-channel isolation prevents backfeed between domains; 0.25A rating at 1.5V VGS supports early-boot sequencing before regulator stabilization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(ON) (2.2Ω @ 4.5V), larger SOT563 package, no integrated ESD diode | Requires external ESD protection; less suitable for space-constrained 1.8V logic interfaces | Select when higher pulsed current (IDM = 1.2A) is required and board area permits larger footprint |
| AOB410L | Single-channel, TO-252 package, 30V/5.5A rating, RDS(ON) = 28mΩ @ 10V - not pin-compatible | Designed for high-current DC-DC phases, not low-voltage logic-driven loads | Choose only for high-power (>1A) applications where dual-channel integration is unnecessary |
Compared with DMN31D5UDW-13, DMN3026LSD-13 trades lower gate charge for reduced integration density and missing ESD hardening, while AOB410L offers superior current handling but abandons the ultra-low-voltage drive capability and dual-channel topology essential for portable system power management.
Availability
DMN31D5UDW-13 is available at Aetrix Electronics and suitable for battery-operated systems, solid-state relay modules, and portable display backlight circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for DMN31D5UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.
DMN31D5UDW-13 belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space- and energy-constrained portable electronics requiring direct 1.8V/2.5V microcontroller interfacing and minimal board real estate.
FAQ
What is the maximum continuous drain current for DMN31D5UDW-13 at 70°C ambient?
The maximum continuous drain current is 0.28A at TA = +70°C with VGS = 4.5V, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (RθJA = 290°C/W) and junction temperature limit of 150°C, ensuring safe operation without forced cooling on standard FR-4 PCBs.
Can DMN31D5UDW-13 be used in high-side switching configurations?
Yes - each channel operates independently with isolated source terminals (S1 and S2), allowing either channel to be configured as high-side switch by connecting its source to the positive rail and driving the gate relative to that rail. No internal connection exists between S1 and S2, enabling true high-side or floating-load implementations.
Does the SOT363 package support reflow soldering per JEDEC J-STD-020?
Yes - the SOT363 package is rated for moisture sensitivity level 1 (MSL-1), meaning it may be stored indefinitely at ≤30°C/85% RH and is compatible with standard Pb-free reflow profiles (peak 260°C). The matte tin finish on Alloy 42 leadframe ensures solderability per MIL-STD-202, Method 208.
Is there a recommended PCB pad layout for thermal performance?
Diodes specifies a minimum recommended pad layout with 1-inch square copper pour for optimal thermal dissipation. For production use, follow the exact dimensions published in Package Outline SOT363 (C = 0.65mm, G = 1.30mm, Y = 0.60mm, Y1 = 2.50mm) and use 2oz copper to achieve the validated RθJA = 290°C/W rating.
DMN31D5UDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 430mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15.4pF @ 15V
- Power - Max:
- 330mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN31D5UDW-13 FAQ
1.How can I place an order for DMN31D5UDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN31D5UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN31D5UDW-13 reliable?
The price and inventory of DMN31D5UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D5UDW-13 is usually 5 days.
3.What payment methods are accepted for DMN31D5UDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D5UDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN31D5UDW-13?
DMN31D5UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN31D5UDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN31D5UDW-13?
For technical support, including DMN31D5UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D5UDW-13 requirements.
6.How does Aetrix verify that DMN31D5UDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN31D5UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D5UDW-13 meets industry standards.
7.What is the process for return or replacement of DMN31D5UDW-13?
All DMN31D5UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D5UDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN31D5UDW-13 part is unused and in its original packaging.
Return procedure for DMN31D5UDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN31D5UDW-13 Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

