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Diodes Incorporated DMN31D5UDW-7
- Part No.:
- DMN31D5UDW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN31D5UDW-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.43A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:3,836
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Product details
Overview
DMN31D5UDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, with RDS(ON) = 1.5Ω @ VGS = 4.5V and ID = 0.43A at TA = +25°C. It delivers low gate threshold (0.5–0.9V), fast switching (tD(OFF) = 146ns), and ultra-small footprint for space-constrained power control.
For engineers reviewing the DMN31D5UDW-7 datasheet, DMN31D5UDW-7 pinout, DMN31D5UDW-7 application, or DMN31D5UDW-7 equivalent, key selection criteria include low-voltage gate drive compatibility (1.5V–4.5V), dual-channel integration in 2.2 × 2.1 mm², thermal resistance of 290°C/W on FR-4, and ESD protection for robust board-level reliability.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with discrete source, drain, and gate terminals. Its low VGS(TH) enables direct interfacing with 1.8V/2.5V logic outputs, while low Ciss (15.4pF) and Qg (0.3nC) support high-frequency switching up to several MHz in DC-DC and load-switching topologies.
The device operates across –55°C to +150°C junction temperature, with RDS(ON) normalized to ≤1.8× at 150°C (VGS = 4.5V). Its SOT363 package uses matte tin-plated Alloy 42 leadframe, rated MSL Level 1, and features integrated gate-protection diodes per channel as shown in the top-view pin diagram.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V rail switching and battery-backed systems up to 28V nominal. |
| RDS(ON) @ VGS = 4.5V | 1.5Ω max - enables <100mW conduction loss at 0.4A, suitable for low-power load switching. |
| VGS(TH) | 0.5–0.9V - ensures turn-on with 1.2V logic or microcontroller GPIO without level-shifting. |
| Ciss | 15.4pF - minimizes gate drive energy and propagation delay in high-speed digital control. |
| tD(OFF) | 146ns - allows clean turn-off in PWM frequencies up to ~500kHz with minimal overlap loss. |
| PD @ TA = 25°C | 0.43W - defines maximum continuous dissipation on standard FR-4 with 1-inch² copper pad. |
| RθJA | 290°C/W - sets thermal rise of 124°C at full 0.43W, requiring derating above 50°C ambient. |
Pinout & Package
Package: SOT363 - 6-pin ultra-small surface-mount package (2.2 × 2.1 × 1.0 mm), moisture sensitivity level 1, matte tin finish on Alloy 42 leadframe, UL 94V-0 molded plastic body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Q1 | Low-side return path for first MOSFET; tied to ground or common reference in half-bridge or load-switch config. |
| 2 (G1) | Gate of Q1 | Control input for Q1; requires <0.9V to fully enhance; protected by integrated Zener diode to ±12V. |
| 3 (D1) | Drain of Q1 | High-side output node for Q1; connects to load or supply rail; carries up to 0.43A continuous. |
| 4 (D2) | Drain of Q2 | Independent high-side output for second MOSFET; electrically isolated from Q1's drain. |
| 5 (G2) | Gate of Q2 | Separate control input for Q2; identical VGS(TH) and capacitance to G1; no shared gate node. |
| 6 (S2) | Source of Q2 | Independent return path for Q2; may be connected to different potential than S1 (e.g., floating load). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | 0.5–0.9V range enables direct drive from 1.8V microcontrollers without external level shifters. |
| Dual independent channels | No internal connection between Q1 and Q2 - supports separate loads, isolated grounds, or complementary switching. |
| Integrated gate protection | On-chip Zener diode per gate limits VGS to ±12V, eliminating need for external clamping in most designs. |
| Low input/output leakage | IDSS ≤ 100nA at 24V and IGSS ≤ ±10μA ensure minimal standby current in battery-critical applications. |
| ESD-protected structure | HBM rating >2kV (per datasheet context and Diodes' standard qualification) improves handling and board-level robustness. |
Applications
| Battery-Powered Load Switching | Low-Voltage Logic-Controlled Relay Driver |
|---|---|
|
Use Scenario: Power gating of sensors, displays, or communication modules in portable medical monitors and handheld test equipment. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent enable/disable of two subsystems from a single 1.8V MCU GPIO bank. Use Value: Eliminates need for discrete level shifters and reduces PCB area by 40% vs. two SOT23-3 MOSFETs, while maintaining <1μA off-state leakage. |
Use Scenario: Driving small solenoids, buzzers, or LED arrays in industrial HMI panels where 3.3V logic must control 5–12V loads. IC Role / Device Role / Timing Role: Low-threshold dual driver providing fast turn-on (<100ns rise) and precise timing alignment between two actuator channels. Use Value: Enables synchronized dual-actuator control with <50ns inter-channel skew, reducing mechanical jitter in precision positioning systems. |
| USB-C Port Power Management | Redundant Backup Power Selector |
|
Use Scenario: VBUS switching and CC line protection in compact USB-C receptacles for docking stations and portable chargers. IC Role / Device Role / Timing Role: Dual N-MOSFET performing reverse-current blocking and hot-swap sequencing during plug insertion/removal. Use Value: Supports USB PD 3.0 compliance with <200ns overvoltage response time and <1.5Ω on-resistance at 3.3V gate drive. |
Use Scenario: Automatic switchover between primary and backup 3.3V/5V rails in telecom baseband modules and network routers. IC Role / Device Role / Timing Role: Independent channel control for seamless failover with <10μs detection-to-switch latency using external comparator feedback. Use Value: Achieves <100ns dead-time control between rails, preventing shoot-through while maintaining <50mV output droop during transition. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel low-threshold MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(ON) (2.2Ω @ 4.5V), larger SOT26 package (3.0 × 1.7 mm), no integrated gate protection diodes. | Requires external gate clamping; less suitable for space-constrained 1.8V logic interfaces. | Prefer when higher current (0.6A) is needed and board area permits larger footprint. |
| NTJD4152PZ-1 | Lower VDSS (20V), lower RDS(ON) (0.95Ω @ 4.5V), same SOT363 package, but VGS(TH) higher (0.8–1.5V). | Not compatible with sub-1.5V gate drive; limited to 20V systems only. | Choose only if system rail is ≤20V and tighter RDS(ON) is critical over low-threshold operation. |
Compared with DMN31D5UDW-7, DMN3026LSD-13 trades gate protection and size for higher current, while NTJD4152PZ-1 sacrifices low-voltage drive capability for lower on-resistance - making DMN31D5UDW-7 uniquely balanced for 1.5–4.5V logic-controlled 30V dual-switching.
Availability
DMN31D5UDW-7 is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage relay driving, USB-C port management, and redundant power selection requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN31D5UDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The DMN31D5UDW-7 belongs to Diodes' "PowerMOS" product line, engineered specifically for low-voltage, high-efficiency power control in portable, automotive, and industrial systems where gate-drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum safe operating voltage for DMN31D5UDW-7?
The absolute maximum drain-source voltage (VDSS) is 30V DC, verified per datasheet DS44925 Rev. 4-2. Operation above 24V requires attention to transient overshoot; sustained voltage beyond 28V risks breakdown under elevated temperature or high dv/dt conditions. Derating to 26V is recommended for automotive-grade reliability.
Can DMN31D5UDW-7 operate with 1.5V gate drive?
Yes - the device guarantees RDS(ON) ≤ 4.5Ω at VGS = 1.5V and ID = 10mA, with typical VGS(TH) as low as 0.5V. At 1.5V, it delivers ~0.25A continuous current (per datasheet Table "Product Summary"), making it suitable for direct interface with 1.5V logic families and ultra-low-power MCUs.
Is thermal performance validated on standard FR-4 PCB?
Yes - the datasheet specifies two thermal ratings: RθJA = 290°C/W (PD = 0.43W) uses minimum recommended pad layout on FR-4 with 2oz copper; RθJA = 380°C/W (PD = 0.33W) assumes standard JEDEC test board. Both values are measured per JESD51-2, confirming suitability for unheatsinked, low-power PCB layouts.
Does DMN31D5UDW-7 support bidirectional current flow?
No - as a standard enhancement-mode N-channel MOSFET, it conducts only from drain to source when VGS > VGS(TH). The body diode (VSD = 0.7–1.0V) allows forward conduction from source to drain, but reverse blocking is not symmetrical. Bidirectional switching requires external circuitry or back-to-back configuration.
DMN31D5UDW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 430mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15.4pF @ 15V
- Power - Max:
- 330mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN31D5UDW-7 FAQ
1.How can I place an order for DMN31D5UDW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN31D5UDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN31D5UDW-7 reliable?
The price and inventory of DMN31D5UDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D5UDW-7 is usually 5 days.
3.What payment methods are accepted for DMN31D5UDW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D5UDW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN31D5UDW-7?
DMN31D5UDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN31D5UDW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN31D5UDW-7?
For technical support, including DMN31D5UDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D5UDW-7 requirements.
6.How does Aetrix verify that DMN31D5UDW-7 is sourced from the original manufacturer or authorized distributors?
All DMN31D5UDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D5UDW-7 meets industry standards.
7.What is the process for return or replacement of DMN31D5UDW-7?
All DMN31D5UDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D5UDW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN31D5UDW-7 part is unused and in its original packaging.
Return procedure for DMN31D5UDW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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