Diodes Incorporated DMN31D5UFA-7B

Overview

DMN31D5UFA-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 0.8mm × 0.6mm X2-DFN0806-3 package, rated for 30V V_DSS, 1.5Ω R_DS(ON) at V_GS = 4.5V, 0.4A I_D, and featuring a low 1.0V max gate threshold voltage - optimized for ultra-compact, low-voltage power switching in space-constrained portable electronics.

For engineers reviewing the DMN31D5UFA-7B datasheet, DMN31D5UFA-7B pinout, DMN31D5UFA-7B application, or DMN31D5UFA-7B equivalent, this device supports high-efficiency load switching in battery-powered systems where minimal gate drive voltage, ultra-small footprint, and low on-resistance at 1.5–4.5V logic levels are critical selection criteria.

Technical Context

This MOSFET employs a planar trench-gate structure to achieve low R_DS(ON) while maintaining fast switching (t_D(OFF) = 146ns, Q_g = 0.3nC) and robust thermal performance (R_θJA = 332°C/W). Its 1.0V max V_GS(TH) enables direct interfacing with 1.8V and 2.5V GPIOs without level-shifting.

The X2-DFN0806-3 package integrates a thermally enhanced copper leadframe with NiPdAu-plated terminals and a 0.4mm max profile, supporting high-density PCB layouts and automated reflow assembly per J-STD-020 Level 1 moisture sensitivity.

Key Specifications

Pinout & Package

Package: X2-DFN0806-3 - 0.8mm × 0.6mm × 0.4mm body, 3-terminal exposed-pad design with drain-connected thermal pad. Marking "BZ" identifies gate-source side orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage load switch applications.

Compared with DMN2021UFDE-7 and AO3414, DMN31D5UFA-7B delivers the lowest gate threshold and smallest footprint among these three, making it uniquely suited for next-generation wearable and implantable electronics where board space and 1.8V logic compatibility are non-negotiable.

Availability

DMN31D5UFA-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless earbud battery management, and medical patch sensor node applications requiring stable component supply, long-term lifecycle support, and traceable green sourcing.

Supply support for DMN31D5UFA-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with manufacturing certified to IATF 16949 and product qualification aligned to AEC-Q200.

This device belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space- and power-constrained portable electronics requiring sub-1V gate drive and industry-leading footprint density.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN31D5UFA-7B supports 0.37A continuous drain current at T_A = +70°C under steady-state conditions on FR-4 PCB with minimum recommended pad layout. This derating reflects thermal limitations imposed by its 332°C/W junction-to-ambient resistance and 380mW power dissipation rating.

Is the exposed thermal pad electrically connected, and how should it be handled?

Yes, the exposed pad is internally connected to the drain terminal. It must be soldered to a dedicated PCB copper pour for thermal relief and electrical continuity. The datasheet specifies a recommended pad layout with thermal vias to inner ground planes to maintain safe junction temperatures during operation.

Does this MOSFET include integrated body diode protection for reverse-current blocking?

The DMN31D5UFA-7B integrates a parasitic body diode with V_SD = 0.6V typical at I_S = 10mA. While functional for freewheeling, it is not rated for sustained reverse-current blocking; external Schottky diodes are recommended when bidirectional isolation is required in battery-backup paths.

Can this part operate reliably at V_GS = 1.5V, and what R_DS(ON) should be expected?

Yes - the device guarantees R_DS(ON) ≤ 4.5Ω at V_GS = 1.5V and I_D = 10mA. At that gate voltage, it delivers usable conduction for low-current loads (e.g., sensor biasing), though R_DS(ON) rises significantly versus 4.5V drive due to sub-threshold operation near the 1.0V threshold.