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Diodes Incorporated DMN31D5UFO-7B
- Part No.:
- DMN31D5UFO-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN31D5UFO-7B.pdf
- Description:
- MOSFET BVDSS: 25V~30V X2-DFN0604
- Quantity:
- Payment:
- Shipping:
Inventory:6,494
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Product details
Overview
DMN31D5UFO-7B from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in a 0.6 mm × 0.4 mm X2-DFN0604-3 package, featuring 1.5 Ω RDS(ON) at VGS = 4.5 V, 1.0 V max gate threshold voltage, and ESD-protected gate. It serves as a low-voltage load switch or analog switch in space-constrained portable power management circuits.
For engineers reviewing the DMN31D5UFO-7B datasheet, DMN31D5UFO-7B pinout, DMN31D5UFO-7B application, or DMN31D5UFO-7B equivalent, key selection criteria include ultra-low VGS(TH), sub-2Ω on-resistance at 1.8 V drive, thermal resistance of 332 °C/W, and compatibility with 1.2 V–4.5 V logic-level control in battery-powered systems.
Technical Context
This MOSFET uses planar silicon process technology optimized for low gate charge (0.38 nC) and fast switching (tD(ON) = 3.2 ns, tF = 7.5 ns), enabling efficient operation in high-frequency DC-DC converter synchronous rectification and load-switching topologies. Its 1.0 V max VGS(TH) ensures reliable turn-on from 1.2 V supply rails.
The device integrates an intrinsic body diode with 0.6–1.0 V forward voltage at 10 mA, supporting bidirectional current flow in analog switch applications. Thermal design is constrained by its 0.38 W steady-state power dissipation and 332 °C/W junction-to-ambient resistance on FR-4 PCB with minimum pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - supports input rails up to 24 V with margin for transients |
| RDS(ON) @ 4.5 V | 1.5 Ω max - enables ≤0.25 W conduction loss at 0.41 A continuous drain current |
| VGS(TH) max | 1.0 V - guarantees turn-on with 1.2 V logic or single-cell Li-ion (2.5–4.2 V) systems |
| Qg | 0.38 nC - minimizes gate drive power and enables >1 MHz switching in compact converters |
| RθJA | 332 °C/W - requires careful PCB copper area allocation for thermal management at >150 mW dissipation |
| ID @ 25°C | 0.41 A - defines maximum continuous load current under ambient cooling conditions |
| Ciss | 22.6 pF - contributes to low capacitive loading on driving GPIOs or gate drivers |
Pinout & Package
Package: X2-DFN0604-3, 0.6 mm × 0.4 mm × 0.36 mm profile, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output terminal | Connected to load or power rail; handles up to 0.41 A continuous; exposed pad not electrically isolated |
| S (Source) | Reference node for gate control and current return | Tied to ground or common reference; forms body diode cathode; critical for stable VGS biasing |
| G (Gate) | Control electrode for channel conduction | ESD-protected input requiring <1.0 V threshold; driven directly by 1.2–4.5 V logic without level shift |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold voltage | 1.0 V max ensures robust turn-on from 1.2 V I/O domains and single-cell battery systems |
| Sub-millimeter footprint | 0.6 mm × 0.4 mm DFN package saves board space in wearables and hearing aids |
| Low on-resistance at low VGS | 3.0 Ω @ 1.8 V enables use with 1.8 V microcontroller GPIOs without external driver |
| Integrated ESD protection | HBM rating ≥2 kV (implied by "ESD Protected Gate") reduces need for external TVS in portable designs |
| Green, halogen-free construction | Meets RoHS 3 and JEDEC J-STD-020 Level 1 standards for automotive and medical-grade assemblies |
Applications
| USB Type-C Port Power Switching | Li-ion Battery Protection Circuit |
|---|---|
Use Scenario: Selectively enabling/disabling VBUS path between USB controller and connector in ultra-thin tablets. IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V/500 mA power delivery with <100 ns response to enable signal. Use Value: 1.5 Ω RDS(ON) limits voltage drop to <750 mV at 0.5 A, preserving USB 2.0 signaling integrity. | Use Scenario: Isolating battery cell from system during over-discharge detection in Bluetooth earbuds. IC Role / Device Role / Timing Role: Reverse-polarity protected analog switch in battery monitoring IC's discharge path. Use Value: 1.0 V VGS(TH) allows direct control from 1.8 V supervisor IC outputs without level translation. |
| Wearable Sensor Power Gating | IoT Node RF Front-End Bias Control |
Use Scenario: Cycling power to MEMS accelerometer and gyroscope to extend coin-cell battery life beyond 12 months. IC Role / Device Role / Timing Role: High-efficiency, low-leakage (≤100 µA IDSS) power gate activated by MCU GPIO. Use Value: 0.001 g weight and 0.6 mm × 0.4 mm footprint minimize impact on wearable form factor constraints. | Use Scenario: Enabling/disabling bias voltage to RF power amplifier in NB-IoT cellular modules. IC Role / Device Role / Timing Role: Fast-turning (tF = 7.5 ns) switch isolating PA supply during sleep mode. Use Value: 0.38 nC Qg reduces gate drive energy, lowering average current draw in duty-cycled LTE-M transmissions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(ON) (2.5 Ω @ 4.5 V), larger SOT-723 package (1.2 mm × 1.2 mm) | Less suitable for ultra-dense layouts; higher thermal resistance (400 °C/W) | Choose when board space permits and lower gate charge is not required |
| AO3414 | Same 30 V rating but higher VGS(TH) (1.4 V max); 2.8 Ω RDS(ON) @ 4.5 V | Requires ≥1.8 V logic drive; less compatible with 1.2 V I/O domains | Prefer when cost is prioritized over ultra-low-threshold performance |
Compared with DMN31D5UFO-7B, DMN3026LSD-13 trades size and thermal performance for broader availability, while AO3414 sacrifices low-threshold capability for cost-making DMN31D5UFO-7B optimal where 1.0 V VGS(TH) and 0.6×0.4 mm footprint are mandatory.
Availability
DMN31D5UFO-7B is available at Aetrix Electronics and suitable for USB power switching, wearable sensor power gating, and IoT RF front-end bias control requiring stable component supply across production lifecycles.
Supply support for DMN31D5UFO-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This device belongs to Diodes' X2-DFN logic-level MOSFET product line, engineered specifically for ultra-compact, low-voltage power management in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for DMN31D5UFO-7B at +85°C ambient?
The maximum continuous drain current is 0.32 A at TA = +85°C, derated from 0.41 A at +25°C due to thermal limitations imposed by its 332 °C/W RθJA and 0.38 W power dissipation rating on standard FR-4 PCB with minimum pad layout.
Is DMN31D5UFO-7B suitable for reverse polarity protection?
No-it is a standard N-channel MOSFET without integrated back-to-back configuration or internal body diode orientation suited for reverse polarity protection. Its intrinsic body diode conducts from source to drain, making it appropriate only for low-side switching or analog multiplexing, not high-side reverse-blocking applications.
Does DMN31D5UFO-7B require external gate resistors for typical GPIO-driven switching?
Not typically-its 0.38 nC total gate charge and low input capacitance allow direct drive from most 1.2–4.5 V microcontroller GPIOs without oscillation or excessive shoot-through risk. However, a 10–100 Ω series resistor is recommended if driving at >500 kHz or when layout introduces significant gate loop inductance.
What is the significance of the "e4" marking on the top of the DMN31D5UFO-7B package?
The "e4" marking indicates NiPdAu (nickel-palladium-gold) plating on the copper leadframe terminals, confirming compliance with MIL-STD-202 solderability requirements and ensuring reliable reflow solder joint formation on fine-pitch 0.3 mm pitch pads in automated assembly processes.
DMN31D5UFO-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 410mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.38 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22.6 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 380mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN0604-3
DMN31D5UFO-7B FAQ
1.How can I place an order for DMN31D5UFO-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN31D5UFO-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN31D5UFO-7B reliable?
The price and inventory of DMN31D5UFO-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D5UFO-7B is usually 5 days.
3.What payment methods are accepted for DMN31D5UFO-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D5UFO-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN31D5UFO-7B?
DMN31D5UFO-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN31D5UFO-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN31D5UFO-7B?
For technical support, including DMN31D5UFO-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D5UFO-7B requirements.
6.How does Aetrix verify that DMN31D5UFO-7B is sourced from the original manufacturer or authorized distributors?
All DMN31D5UFO-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D5UFO-7B meets industry standards.
7.What is the process for return or replacement of DMN31D5UFO-7B?
All DMN31D5UFO-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D5UFO-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN31D5UFO-7B part is unused and in its original packaging.
Return procedure for DMN31D5UFO-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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