Diodes Incorporated DMN31D5UFZQ-7B

Overview

DMN31D5UFZQ-7B from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in a 0.62 mm × 0.62 mm X2-DFN0606-3 package, rated for 30 V V_DSS, 1.5 Ω R_DS(ON) at V_GS = 4.5 V, 0.41 A continuous drain current, and 1.0 V max gate threshold voltage - optimized for low-voltage, space-constrained power switching in automotive body electronics and portable power management.

For engineers reviewing the DMN31D5UFZQ-7B datasheet, DMN31D5UFZQ-7B pinout, DMN31D5UFZQ-7B application, or DMN31D5UFZQ-7B equivalent, key selection criteria include ultra-low V_GS(TH) for 1.8 V logic compatibility, sub-1.6 Ω on-resistance at 2.5 V drive, 0.4 mm max profile for thin PCBs, ESD-protected gate, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 3.2 ns, t_F = 7.5 ns) and low gate charge (Q_g = 0.38 nC), enabling efficient operation in high-frequency DC-DC load switches and battery protection circuits. Its 1.0 V max V_GS(TH) ensures reliable turn-on with 1.8 V and 2.5 V microcontroller I/O.

The device integrates a body diode with V_SD = 0.54 V (typ.) at I_S = 10 mA and exhibits normalized R_DS(ON) variation of ≤1.3× across −55°C to +150°C, supporting stable performance in automotive under-hood and infotainment environments.

Key Specifications

Pinout & Package

Package: X2-DFN0606-3, 3-terminal leadless plastic DFN with exposed drain pad (pin 3). Dimensions: 0.62 mm × 0.62 mm × 0.4 mm max. Terminals: NiPdAu over copper leadframe, solderable per MIL-STD-202.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage N-channel MOSFET applications.

Compared with DMN3026LFG-7 and AO3414, the DMN31D5UFZQ-7B delivers the lowest V_GS(TH) and best R_DS(ON) at 1.8–2.5 V drive, combined with the smallest footprint and automotive qualification - making it optimal for next-gen space- and voltage-constrained automotive and portable electronics.

Availability

DMN31D5UFZQ-7B is available at Aetrix Electronics and suitable for automotive interior lighting, portable medical sensor biasing, USB-C port power switching, and industrial IoT node load management requiring stable component supply, AEC-Q101 compliance, and consistent lead-free sourcing.

Supply support for DMN31D5UFZQ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN31D5UFZQ-7B belongs to Diodes' Automotive-Grade Small-Signal MOSFET product line, engineered specifically for low-voltage, high-reliability power switching in space-constrained automotive and portable electronic systems.

FAQ

Is DMN31D5UFZQ-7B suitable for high-frequency PWM switching above 500 kHz?

Yes - with Q_g = 0.38 nC, C_iss = 22.6 pF, and t_F = 7.5 ns, the DMN31D5UFZQ-7B supports clean switching up to 2 MHz in properly laid-out PCBs using 2 Ω gate resistors. Its low R_DS(ON) minimizes conduction loss, while fast turn-off delay (t_D(OFF) = 21 ns) prevents shoot-through in half-bridge configurations.

What is the recommended PCB pad layout for thermal performance?

Use the manufacturer-specified X2-DFN0606-3 pad layout: 0.35 mm × 0.28 mm solder mask opening, 0.35 mm × 0.76 mm copper pad, with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting the exposed drain pad to inner-layer ground planes. This achieves near-datasheet R_θJA = 315 °C/W on 2-layer FR-4.

Does the device require external gate pull-down resistors in automotive applications?

No - the device's guaranteed V_GS(TH) ≤ 1.0 V and low I_GSS (±10 μA) ensure stable off-state behavior without external pull-downs. However, a 100 kΩ resistor is recommended in noisy CAN/LIN environments to suppress EMI-induced false turn-on during EMC testing.

How does the R_DS(ON) change over temperature in automotive operating range?

R_DS(ON) increases by ≤30 % from −40°C to +125°C at V_GS = 4.5 V (Figure 5), remaining below 2.0 Ω across the full AEC-Q101 temperature range. At V_GS = 2.5 V, normalized R_DS(ON) rises to 1.25× at 125°C (Figure 6), confirming stable operation in engine bay and cabin environments.