Diodes Incorporated DMN31D6UT-13

Overview

DMN31D6UT-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 30V V_DSS, 1.5Ω R_DS(ON) at 4.5V V_GS, and 350mA continuous drain current. It features low gate threshold (0.4–1.4V), ESD-protected gate, and fast switching (t_D(ON) = 3.3ns), enabling compact, high-efficiency power management in space-constrained portable electronics.

For engineers reviewing the DMN31D6UT-13 datasheet, DMN31D6UT-13 pinout, DMN31D6UT-13 application, or DMN31D6UT-13 equivalent, key selection criteria include its low-voltage gate drive compatibility (2.5V logic), thermal resistance (593°C/W on FR-4), and AEC-Q101 qualification for reliability-critical embedded systems.

Technical Context

This discrete MOSFET operates as a low-side switch with enhancement-mode behavior, requiring positive V_GS to conduct. Its 1.1Ω typical R_DS(ON) at 4.5V enables efficient load switching below 350mA, while the 0.35nC total gate charge supports high-frequency PWM control up to several MHz without excessive driver loss.

The integrated ESD protection diode across gate-source and the 12V V_GSS rating ensure robustness against handling transients. Thermal performance is defined for two PCB conditions: 210mW PD on minimal pad layout and 320mW on enhanced 2oz copper, reflecting real-world layout dependency.

Key Specifications

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 0.80 × 0.50 mm), moisture sensitivity level 1, matte tin-plated terminals solderable per MIL-STD-202.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with DMN2016LFG-7 and AO3414, the DMN31D6UT-13 uniquely balances AEC-Q101 reliability, 30V capability, and ultra-small SOT523 footprint-making it optimal for space-limited, automotive-qualified, sub-500mA switching nodes.

Availability

DMN31D6UT-13 is available at Aetrix Electronics and suitable for motor control, LED driver, portable electronics, and power management applications requiring stable component supply and long-term manufacturability.

Supply support for DMN31D6UT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN31D6UT-13 belongs to Diodes' "Small Signal MOSFET" product line, engineered for low-voltage, low-current switching in portable, automotive, and industrial systems where miniaturization and reliability are primary design constraints.

FAQ

What is the maximum safe operating voltage for DMN31D6UT-13?

The absolute maximum drain-source voltage (V_DSS) is 30V. Operation above this value risks avalanche breakdown and permanent device failure. For reliable long-term use, design margin recommends limiting V_DS to ≤24V in transient-prone environments such as automotive load-dump scenarios.

Can DMN31D6UT-13 be driven directly by a 1.8V GPIO?

No. With a minimum V_GS(TH) of 0.4V and typical turn-on starting near 1.0V, a 1.8V GPIO may yield inconsistent or weak conduction. At 1.8V V_GS, R_DS(ON) exceeds 5Ω (per Figure 4), increasing power loss significantly. Use ≥2.5V logic or add a level shifter.

Is thermal derating required for continuous 350mA operation?

Yes. At 350mA and 1.5Ω R_DS(ON), power dissipation reaches 184mW. On a standard FR-4 board (R_θJA = 593°C/W), junction temperature rise is ~109°C - exceeding the 150°C max if ambient exceeds 41°C. Derate current to ≤250mA for ambient >85°C or use enhanced copper layout.

Does DMN31D6UT-13 include intrinsic body diode functionality?

Yes. As a standard N-channel MOSFET, it integrates a parasitic source-drain body diode with typical forward voltage of 0.6V at 10mA (V_SD). This diode conducts during inductive flyback (e.g., motor coil decay) but is not rated for continuous reverse recovery; external Schottky clamping is recommended for high-repetition switching.