Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN31D6UT-7

Part No.:
DMN31D6UT-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-523
Datasheet:
AetrixDMN31D6UT-7.pdf
Description:
MOSFET N-CH 30V 350MA SOT523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,966

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN31D6UT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 30V VDSS, 1.5Ω RDS(ON) @ 4.5V VGS, and 350mA continuous drain current at +25°C - optimized for low-voltage power switching in space-constrained motor control and portable power management circuits.

For engineers reviewing the DMN31D6UT-7 datasheet, DMN31D6UT-7 pinout, DMN31D6UT-7 application, or DMN31D6UT-7 equivalent, key selection criteria include gate threshold voltage (0.4–1.4V), low input capacitance (13.6pF Ciss), ESD-protected gate, AEC-Q101 qualification, and thermal resistance (593°C/W RθJA) on FR-4 PCB.

Technical Context

This discrete MOSFET operates as a single low-side switch with integrated gate protection diode and ESD-hardened structure. Its 0.4–1.4V VGS(TH) enables direct drive from 1.8V/2.5V/3.3V logic, while 2.2pF Crss and 0.35nC Qg support fast switching (tF = 4.4ns) with minimal drive loss.

The device uses alloy-42 leadframe with matte tin annealing and green molding compound (UL 94V-0), achieving moisture sensitivity level 1 and full RoHS/Halogen-free compliance. Thermal performance is specified for two PCB mounting conditions: 210mW PD on minimum pad layout and 320mW PD on high-copper 1"×1" board.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - supports 24V rail switching and automotive 12V systems with margin
RDS(ON) 1.5Ω @ VGS = 4.5V, ID = 100mA - ensures <50mW conduction loss at 200mA load
ID Continuous 350mA @ TA = +25°C - suitable for micro-motor drivers and LED bias switches
Ciss 13.6pF @ VDS = 15V - enables clean edge integrity in 1–10MHz PWM applications
Qg 0.35nC @ VGS = 4.5V - reduces gate drive power to <1.8μW at 5MHz switching
VGS(TH) 0.4–1.4V - guarantees turn-on with 1.8V I/O without level-shifting
RθJA 593°C/W (min pad) - requires thermal relief only for sustained >150mA operation

Pinout & Package

SOT523 package: ultra-small surface-mount plastic case (1.60 × 0.80 × 0.50 mm), molded with halogen-free green compound, UL 94V-0 rated, weight ≈ 0.002 g.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control electrode ESD-protected input accepting 0.4–1.4V threshold; max ±12V rating prevents overvoltage damage
Source (S) Reference node Common return path for load current; tied to ground in low-side configuration
Drain (D) Power output node Switched high-side connection to load; handles up to 30V and pulsed 800mA

Key Features

Feature Design Value
Low RDS(ON) 1.5Ω @ 4.5V enables efficient 3.3V logic-driven switching with <100mW loss at 250mA
Low VGS(TH) 0.4V min allows reliable turn-on from 1.8V microcontroller GPIOs without external bias
Fast switching tF = 4.4ns and tD(OFF) = 7.4ns minimize dead-time losses in synchronous buck stages
ESD protection HBM-rated gate withstands ≥2kV discharge, eliminating need for external TVS in handheld designs
AEC-Q101 qualified Validated for automotive temperature range (−55°C to +150°C) and mechanical stress testing

Applications

Brushless DC Motor Driver USB-C Power Path Switch

Use Scenario: Low-power BLDC gate driver stage in compact fans or cooling modules.

IC Role / Device Role / Timing Role: Low-side switch controlling phase current commutation timing.

Use Value: 1.5Ω RDS(ON) limits conduction loss to <94mW at 300mA, reducing thermal footprint in sealed enclosures.

Use Scenario: Load switch enabling/disabling VBUS in portable USB-C accessories.

IC Role / Device Role / Timing Role: Single-pole power path controller with fast enable/disable response.

Use Value: 0.35nC Qg and 4.4ns tF allow sub-100ns transition between powered/unpowered states.

IoT Sensor Node Power Gating Medical Wearable Battery Management

Use Scenario: Duty-cycled power delivery to BLE transceivers and environmental sensors.

IC Role / Device Role / Timing Role: Standby-mode load disconnect switch controlled by MCU GPIO.

Use Value: 100nA IDSS leakage preserves battery life over multi-week sleep cycles in coin-cell-powered nodes.

Use Scenario: Isolation switch between Li-ion cell and analog front-end in patch monitors.

IC Role / Device Role / Timing Role: Safety-critical power isolation element meeting AEC-Q101 reliability requirements.

Use Value: −55°C to +150°C operating range ensures stable RDS(ON) across body-worn thermal profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004LK-7 20V VDSS, 0.85Ω RDS(ON) @ 4.5V, SOT-723 package Lower voltage rating limits use to ≤12V systems; smaller footprint (1.25×0.85mm) Select when board space is critical and 24V transients are absent
AO3400A 30V VDSS, 0.042Ω RDS(ON) @ 10V, SOT-23 package, higher Qg (12nC) Larger SOT-23 footprint; requires 10V gate drive for optimal RDS(ON); not AEC-Q101 qualified Choose for higher-current (>500mA) 3.3V/5V logic-driven loads where automotive qualification is unnecessary

Compared with DMN31D6UT-7, DMN2004LK-7 offers tighter space efficiency but reduced voltage margin, while AO3400A delivers significantly lower on-resistance at the cost of larger size, higher gate charge, and no automotive qualification - making DMN31D6UT-7 optimal for AEC-Q101-compliant, space-constrained 24V-compatible micro-switching.

Availability

DMN31D6UT-7 is available at Aetrix Electronics and suitable for motor control, USB-C power path switching, and IoT sensor node power gating requiring stable component supply across industrial, medical, and automotive-tier production programs.

Supply support for DMN31D6UT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations spanning Asia, Europe, and North America.

The DMN31D6UT-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for reliable, low-power switching in automotive infotainment, body electronics, and portable industrial equipment.

FAQ

What is the maximum continuous drain current for DMN31D6UT-7 at 85°C ambient?

At TA = +85°C, the continuous drain current is derated to approximately 220mA based on the 210mW power dissipation limit and RθJA = 593°C/W. This assumes minimum PCB pad layout per datasheet note 5; using enhanced copper improves current handling to ~300mA at 85°C.

Is DMN31D6UT-7 suitable for reverse polarity protection?

No - DMN31D6UT-7 is an N-channel MOSFET intended for low-side switching only. Its intrinsic body diode conducts from source to drain, making it unsuitable for high-side reverse polarity protection without external circuitry. A P-channel device like DMP2100UFG-7 is recommended for that function.

Does the SOT523 package support automated optical inspection (AOI) after reflow?

Yes - the SOT523's 0.50mm pitch, coplanar terminals, and matte tin finish provide consistent reflectivity and solder joint geometry compatible with standard AOI systems. Diodes' recommended pad layout (AP02001) ensures ≥85% solder coverage for reliable defect detection.

How does gate threshold variation affect switching consistency across temperature?

VGS(TH) shifts from 0.85V at −55°C to 1.15V at +150°C (Figure 8), causing <±0.15V drift over full range. At 3.3V logic drive, this maintains >2V overdrive margin, ensuring robust turn-on without timing skew in motor commutation or power sequencing.

DMN31D6UT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.35 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
13.6 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
320mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DMN31D6UT-7 FAQ

1.How can I place an order for DMN31D6UT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN31D6UT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN31D6UT-7 reliable?

The price and inventory of DMN31D6UT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN31D6UT-7 is usually 5 days.

3.What payment methods are accepted for DMN31D6UT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN31D6UT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN31D6UT-7?

DMN31D6UT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN31D6UT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN31D6UT-7?

For technical support, including DMN31D6UT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN31D6UT-7 requirements.

6.How does Aetrix verify that DMN31D6UT-7 is sourced from the original manufacturer or authorized distributors?

All DMN31D6UT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN31D6UT-7 meets industry standards.

7.What is the process for return or replacement of DMN31D6UT-7?

All DMN31D6UT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN31D6UT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN31D6UT-7 part is unused and in its original packaging.

Return procedure for DMN31D6UT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN31D6UT-7 Tags

  • DMN31D6UT-7
  • DMN31D6UT-7 PDF
  • DMN31D6UT-7 Datasheet
  • DMN31D6UT-7 Specifications
  • DMN31D6UT-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN31D6UT-7
  • Buy DMN31D6UT-7
  • DMN31D6UT-7 Price
  • DMN31D6UT-7 Distributor
  • DMN31D6UT-7 Supplier
  • DMN31D6UT-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER