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Diodes Incorporated DMN3270UVT-13

Part No.:
DMN3270UVT-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMN3270UVT-13.pdf
Description:
MOSFET 2N-CH 30V 1.6A TSOT26
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,075

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Product details

Overview

DMN3270UVT-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in TSOT26 package, optimized for low RDS(ON) at 2.5V and 4.5V gate drive, with 270mΩ @ VGS = 4.5V, 1.6A continuous drain current, and AEC-Q101 qualification-used in battery management systems and EV auxiliary power switching.

For engineers reviewing the DMN3270UVT-13 datasheet, DMN3270UVT-13 pinout, DMN3270UVT-13 application, or DMN3270UVT-13 equivalent, key selection criteria include gate threshold voltage (0.35–0.9V), thermal resistance (118°C/W on 1"×1" 2oz copper), and low-input capacitance (161pF Ciss) for high-efficiency DC-DC control in space-constrained automotive modules.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining fast switching speed (tD(ON) = 163ns, tF = 674ns) and robust body diode performance (QRR = 426nC). Its gate protection diode structure and ESD-hardened gate support reliable operation in noisy 12V/24V vehicle subsystems.

The device operates across –55°C to +150°C junction temperature, with RDS(ON) normalized to 1.2× at 125°C (VGS = 4.5V), and features a 1kΩ gate resistor (Rg) and 338kΩ gate-source resistor (Rgs) integrated into its terminal design for controlled turn-on/turn-off behavior.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30V - supports 24V nominal automotive rails with 25% headroom for load dump transients
RDS(ON)270mΩ @ VGS = 4.5V - enables <1W conduction loss at 1.6A in compact PCB layouts
ID (max)1.6A @ TA = +25°C - suitable for low-power DC-DC converter high-side switches
Qg3.07nC @ VGS = 4.5V - reduces gate drive power requirement in 500kHz+ switching applications
Ciss161pF - minimizes Miller effect and improves noise immunity in PWM-controlled loads
TJ range–55°C to +150°C - meets under-hood temperature requirements per AEC-Q101 Grade 1
PD1.08W on 1"×1" 2oz FR-4 - defines maximum continuous power handling without heatsink

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (S)SourceCommon return path for load current; internally tied to exposed pad for thermal conduction
2 (G)GateControl input with integrated ESD protection diode and 1kΩ series resistance
3 (D)DrainMain power output node; connected to internal die top metallization and package leadframe
4 (S)SourceSecond source connection-electrically identical to Pin 1, enhances current sharing and thermal dissipation
5 (G)GateRedundant gate terminal-identical to Pin 2, improves gate drive stability in high-noise environments
6 (D)DrainSecond drain connection-identical to Pin 3, lowers package inductance for high-frequency switching

Key Features

FeatureDesign Value
Low RDS(ON) at 2.5V350mΩ - enables direct drive from 3.3V microcontrollers without level-shifting circuitry
Fast switching with low Qgd0.25nC - reduces Miller plateau time and improves duty-cycle fidelity in synchronous buck stages
Integrated gate protectionESD-rated to >2kV HBM - eliminates need for external gate Zener clamps in cost-sensitive BMS designs
AEC-Q101 qualifiedStress-tested for automotive reliability - includes HTOL, TC, UHAST, and ESD per JESD22 standards

Applications

Battery Management System (BMS)Electric Vehicle Auxiliary Power

Use Scenario: High-side switch for cell balancing discharge path in 12S Li-ion packs.

IC Role / Device Role / Timing Role: Discrete N-channel MOSFET controlling bidirectional current flow during active balancing cycles.

Use Value: Low 2.5V RDS(ON) ensures <0.5W loss per FET at 1.4A, enabling thermally constrained PCB layouts.

Use Scenario: Load switch for 12V HVAC blower motor control in BEV cabin systems.

IC Role / Device Role / Timing Role: Low-side switching element driven by automotive MCU GPIO with 3.3V logic.

Use Value: 1.6A rating and 150°C TJ max allow sustained operation in engine bay proximity without derating.

USB-C Power Delivery ProtectionIndustrial 24V PLC I/O Module

Use Scenario: Reverse-polarity and overcurrent protection switch upstream of USB-C PD controller IC.

IC Role / Device Role / Timing Role: Hot-swap MOSFET with fast turn-off (tF = 674ns) to limit fault energy during short-circuit events.

Use Value: Low Ciss and integrated gate protection reduce external component count versus discrete protection solutions.

Use Scenario: Solid-state relay replacement for 24V digital output channel driving solenoid valves.

IC Role / Device Role / Timing Role: Low-RDS(ON) power switch interfacing with isolated digital driver ICs.

Use Value: 270mΩ on-resistance limits self-heating to <0.7W at 1.6A, supporting 100% duty cycle in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LFD-7Lower RDS(ON) (25mΩ @ 4.5V), higher ID (6.5A), same TSOT26 packageRequires higher gate drive strength; not optimized for 2.5V logicSelect when higher current and lower conduction loss outweigh gate drive compatibility needs
AO3400Higher RDS(ON) (44mΩ @ 10V), no AEC-Q101 qualification, same pinoutLimited to commercial-temperature industrial use; lacks automotive reliability validationSelect only for non-automotive applications where cost is primary constraint and AEC-Q101 is not required

Compared with DMN3025LFD-7 and AO3400, the DMN3270UVT-13 uniquely balances 2.5V logic compatibility, AEC-Q101 compliance, and thermally efficient TSOT26 packaging-making it optimal for space-limited, automotive-grade power switches where gate drive voltage headroom is constrained.

Availability

DMN3270UVT-13 is available at Aetrix Electronics and suitable for battery management systems, electric vehicle auxiliary power modules, and industrial 24V PLC I/O requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for DMN3270UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with manufacturing and test facilities across Asia and design centers in the US, UK, and Taiwan.

The DMN3270UVT-13 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive and industrial power-switching applications demanding high reliability, low-voltage gate drive, and thermally efficient packaging.

FAQ

What is the maximum gate-source voltage rating for DMN3270UVT-13?

The absolute maximum gate-source voltage (VGSS) is +5V and –0.5V. Exceeding +5V risks permanent gate oxide damage, while negative voltage beyond –0.5V may forward-bias the integrated gate protection diode. This rating is validated per JEDEC JESD22-A114 and confirmed in the DS39154 datasheet Section "Maximum Ratings".

Does DMN3270UVT-13 require an external gate resistor for automotive PWM applications?

No external gate resistor is required for typical 100–500kHz PWM operation due to the integrated 1kΩ gate resistance (Rg). This value provides inherent damping against ringing and reduces EMI without compromising switching speed-verified in Figure 11 (Gate Charge) and dynamic characterization data in DS39154 Rev. 2–2.

How does the body diode performance impact reverse recovery in BMS applications?

The body diode exhibits tRR = 371ns and QRR = 426nC at IF = 1A, di/dt = 100A/μs. In BMS cell-balancing circuits, this enables clean commutation during bidirectional switching, minimizing voltage overshoot and reducing snubber component count-confirmed in Figure 9 (Diode Forward Voltage) and Section "Electrical Characteristics".

Is the exposed pad of the TSOT26 package electrically connected, and how should it be handled on PCB?

Yes-the exposed pad is internally connected to the Source terminals (Pins 1 and 4) and must be soldered to a large copper pour for thermal conduction. The recommended pad layout (X = 0.700mm, Y = 1.000mm, C = 0.950mm) is specified in DS39154 page 6 and ensures RθJA = 118°C/W on 1"×1" 2oz copper, as verified in thermal testing per Note 6.

DMN3270UVT-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
Rds On (Max) @ Id, Vgs:
270mOhm @ 650mA, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 40µA
Gate Charge (Qg) (Max) @ Vgs:
3.07nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
161pF @ 15V
Power - Max:
760mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMN3270UVT-13 FAQ

1.How can I place an order for DMN3270UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3270UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3270UVT-13 reliable?

The price and inventory of DMN3270UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3270UVT-13 is usually 5 days.

3.What payment methods are accepted for DMN3270UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3270UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3270UVT-13?

DMN3270UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3270UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3270UVT-13?

For technical support, including DMN3270UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3270UVT-13 requirements.

6.How does Aetrix verify that DMN3270UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMN3270UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3270UVT-13 meets industry standards.

7.What is the process for return or replacement of DMN3270UVT-13?

All DMN3270UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3270UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3270UVT-13 part is unused and in its original packaging.

Return procedure for DMN3270UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3270UVT-13 Tags

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