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Diodes Incorporated DMN3270UVT-7

Part No.:
DMN3270UVT-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-23-6 Thin, TSOT-23-6
Datasheet:
AetrixDMN3270UVT-7.pdf
Description:
MOSFET 2N-CH 30V 1.6A TSOT26
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,455

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Product details

Overview

DMN3270UVT-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in TSOT26 package, optimized for low RDS(ON) (270 mΩ @ VGS = 4.5V) and fast switching in space-constrained power management circuits. It delivers 1.6A continuous drain current at +25°C and supports battery management systems and EV auxiliary power rails.

For engineers reviewing the DMN3270UVT-7 datasheet, DMN3270UVT-7 pinout, DMN3270UVT-7 application, or DMN3270UVT-7 equivalent, key selection criteria include gate threshold voltage (0.35–0.9V), thermal resistance (118 °C/W on 1"×1" 2oz copper), body diode forward voltage (0.6–1.0V), and AEC-Q101 qualification for automotive reliability.

Technical Context

This MOSFET employs planar trench-gate technology to balance conduction loss and switching speed. Its low input capacitance (Ciss = 161 pF) and fast turn-on delay (163 ns) enable efficient operation in DC-DC converters and load switches operating up to 1 MHz.

The device integrates ESD-protected gate structure and features dual gate protection diodes per internal schematic. Its RDS(ON) remains stable across -55°C to +150°C junction temperature, with normalized variation ≤1.6× at 150°C under VGS = 4.5V.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - Maximum blocking voltage before avalanche breakdown; suitable for 24V system rails with margin.
RDS(ON)270 mΩ @ VGS = 4.5V - Enables <100 mW conduction loss at 0.65A; critical for thermally limited PCB layouts.
ID (continuous)1.6 A @ TA = +25°C - Sustains typical load-switch currents without forced cooling on minimal copper area.
Qg3.07 nC @ VGS = 4.5V - Low gate charge reduces driver power and enables use with low-current GPIOs or microcontroller pins.
RθJA118 °C/W - Measured on 1"×1" FR-4 with 2oz copper; defines thermal derating slope for ambient temperature design.
VGS(TH)0.35–0.9 V - Ultra-low threshold enables direct drive from 1.8V/3.3V logic without level shifters.
Ciss161 pF - Limits high-frequency gate drive losses and EMI generation in switching nodes.

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), moisture sensitivity level 1, RoHS-compliant tin-finished copper leadframe.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts logic-level gate drive; protected by integrated Zener diode.
2 (S)SourceReference node for gate drive; connected to power ground or return path in high-side configuration.
3 (D)DrainPower output terminal; carries load current; electrically tied to internal body diode anode.
4 (S)Source (tied)Second source connection; paralleled internally with Pin 2 to reduce source inductance and improve switching stability.
5 (D)Drain (tied)Second drain connection; paralleled internally with Pin 3 to lower drain inductance and minimize voltage overshoot.
6 (G)Gate (tied)Second gate connection; paralleled internally with Pin 1 to reduce gate loop inductance and suppress oscillation.

Key Features

FeatureDesign Value
Low RDS(ON) at 2.5V drive350 mΩ - Enables reliable operation from 2.5V microcontrollers or PMIC outputs without gate boosting.
Fast switching with low Qgd0.25 nC - Reduces Miller plateau time and improves hard-switching efficiency in buck converters.
AEC-Q101 qualifiedQualified for automotive-grade reliability - validated for temperature cycling, HTRB, and ESD per JESD22 standards.
Integrated gate protectionOn-chip Zener clamp - eliminates need for external gate resistors or TVS diodes in most 24V applications.
Green molding compoundUL 94V-0 rated, halogen/antimony-free - meets IPC-1752 and automotive material compliance requirements.

Applications

Battery Protection CircuitAutomotive Body Control Module

Use Scenario: Reverse-polarity and overcurrent protection in 12V/24V Li-ion battery packs for portable tools and e-bikes.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery discharge path; activated only when MCU confirms cell voltage and temperature safety.

Use Value: 270 mΩ RDS(ON) limits power loss to <115 mW at 1.0A, preserving battery runtime and reducing thermal stress on PCB.

Use Scenario: Power distribution to interior lighting, door locks, and window motors in passenger vehicles.

IC Role / Device Role / Timing Role: High-reliability load switch driven by CAN-connected microcontroller; handles repetitive inrush from incandescent lamps.

Use Value: AEC-Q101 qualification ensures >1000-hour HTOL lifetime at 125°C junction, meeting OEM automotive longevity requirements.

USB-C Power Delivery SinkIndustrial IoT Sensor Node

Use Scenario: Input power path control in USB-C PD sink devices accepting up to 20V/3A input.

IC Role / Device Role / Timing Role: Reverse-voltage blocking switch placed between connector and buck converter; prevents backfeed during hot-plug events.

Use Value: 30V VDSS and 0.6V body diode forward voltage ensure safe clamping of 20V transients without external TVS.

Use Scenario: Power gating for BLE radio, environmental sensors, and flash memory in battery-powered edge nodes.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch enabling <1 µA off-state leakage; controlled via 1.8V GPIO.

Use Value: 0.35V gate threshold allows full enhancement from 1.8V logic, eliminating level-shifter ICs and saving board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LSD-13Lower RDS(ON) (25 mΩ @ 4.5V), larger SO-8 package, higher Qg (12.5 nC)Requires more PCB area and stronger gate driver; better for high-current (>3A), lower-frequency (<500 kHz) designsSelect when thermal budget permits larger footprint and peak current exceeds 2A.
AO3414Higher RDS(ON) (44 mΩ @ 4.5V), same TSOT26 package, no AEC-Q101 qualificationLacks automotive reliability validation; suitable for consumer-grade cost-sensitive applications onlySelect only for non-automotive, non-safety-critical designs where AEC-Q101 is not required.

Compared with DMN3270UVT-7, DMN3025LSD-13 trades compact size for lower conduction loss and higher drive demand, while AO3414 offers identical form factor but lacks automotive qualification and has higher on-resistance-making DMN3270UVT-7 optimal for space-constrained, AEC-Q101–mandated 1–2A loads.

Availability

DMN3270UVT-7 is available at Aetrix Electronics and suitable for battery management systems, automotive body electronics, and USB-C power delivery designs requiring stable component supply and AEC-Q101 compliance.

Supply support for DMN3270UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

The DMN3270UVT-7 belongs to Diodes' Automotive-Qualified Logic-Level MOSFET product line, engineered specifically for low-voltage, high-reliability power switching in 12V/24V vehicle subsystems and portable energy storage systems.

FAQ

What is the maximum junction temperature rating for DMN3270UVT-7?

The DMN3270UVT-7 is rated for continuous operation from –55°C to +150°C junction temperature. Its RDS(ON) increases predictably with temperature, remaining within 1.6× nominal value at 150°C under VGS = 4.5V, enabling robust thermal design in sealed enclosures.

Does DMN3270UVT-7 require external gate protection components?

No external gate protection is required in standard 24V applications. The device integrates gate-source Zener clamps and ESD protection rated to ±2000V HBM, validated per AEC-Q101. External series gate resistors may still be used for EMI suppression in high-dI/dt layouts.

Can DMN3270UVT-7 be used in high-side switching configurations?

Yes-it supports high-side switching when paired with a gate driver capable of providing VGS ≥ 4.5V above the source potential. Its 5V maximum gate-source rating and low Qg make it compatible with bootstrap or charge-pump drivers in half-bridge topologies.

Is the TSOT26 package of DMN3270UVT-7 compatible with standard reflow profiles?

Yes-the TSOT26 package is qualified for standard lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260°C. Its moisture sensitivity level 1 allows unlimited floor life at ≤30°C/60% RH, eliminating bake requirements prior to assembly.

DMN3270UVT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-23-6 Thin, TSOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
Rds On (Max) @ Id, Vgs:
270mOhm @ 650mA, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 40µA
Gate Charge (Qg) (Max) @ Vgs:
3.07nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
161pF @ 15V
Power - Max:
760mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26

DMN3270UVT-7 FAQ

1.How can I place an order for DMN3270UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3270UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3270UVT-7 reliable?

The price and inventory of DMN3270UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3270UVT-7 is usually 5 days.

3.What payment methods are accepted for DMN3270UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3270UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3270UVT-7?

DMN3270UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3270UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3270UVT-7?

For technical support, including DMN3270UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3270UVT-7 requirements.

6.How does Aetrix verify that DMN3270UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN3270UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3270UVT-7 meets industry standards.

7.What is the process for return or replacement of DMN3270UVT-7?

All DMN3270UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3270UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3270UVT-7 part is unused and in its original packaging.

Return procedure for DMN3270UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3270UVT-7 Tags

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