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Diodes Incorporated DMN32D0LV-13
- Part No.:
- DMN32D0LV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN32D0LV-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.68A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:4,106
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Product details
Overview
DMN32D0LV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 1.2Ω RDS(ON) @ 4.5V VGS, and 0.68A continuous drain current at +25°C. It delivers low gate threshold (0.6–1.2V), fast switching (tD(ON) = 3.41ns), and ultra-low input capacitance (Ciss = 44.8pF), enabling high-efficiency power management in space-constrained DC-DC converters.
For engineers reviewing the DMN32D0LV-13 datasheet, DMN32D0LV-13 pinout, DMN32D0LV-13 application, or DMN32D0LV-13 equivalent, key selection criteria include its dual-N-channel topology in ultra-small SOT563, guaranteed RDS(ON) at 2.5V/4.5V gate drive, JEDEC-qualified reliability, and suitability for low-voltage load switching in portable electronics.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with separate source, drain, and gate terminals. Its low 1.2Ω on-resistance at 4.5V VGS and sub-1V gate threshold enable direct interfacing with 1.8V/2.5V logic outputs without level shifting.
Thermal performance is defined for FR-4 PCBs with 2oz copper and minimum pad layout: RθJA = 261°C/W and PD = 480mW. Dynamic parameters-including Qg = 0.62nC, Qgd = 0.24nC, and Crss = 2.5pF-are specified at VDS = 15V, supporting high-frequency synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports input rails up to 24V nominal systems with margin for transients |
| RDS(ON) @ 4.5V | 1.2Ω - enables ≤800mW conduction loss at 0.68A, critical for thermally limited SOT563 |
| VGS(TH) | 0.6–1.2V - ensures full enhancement with 1.8V I/O microcontrollers and low-power logic |
| Ciss | 44.8pF - minimizes gate drive energy and switching losses in >1MHz DC-DC topologies |
| tD(ON) | 3.41ns - reduces dead-time requirements in synchronous buck controllers |
| PD | 480mW - defines maximum steady-state power dissipation on standard FR-4 layout |
| Qg | 0.62nC - determines gate driver current demand for 10ns rise time (IG ≈ 62mA) |
Pinout & Package
Package: SOT563 - ultra-small 6-pin surface-mount package (1.6 × 1.6 × 0.6mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2 |
| Pin 2 (G1) | Gate of Channel 1 | Control input for first MOSFET; requires <1.2V to turn on fully |
| Pin 3 (S1) | Source of Channel 1 | Reference node for Channel 1; may be tied to ground or floating |
| Pin 4 (S2) | Source of Channel 2 | Independent reference for Channel 2; not internally connected to S1 |
| Pin 5 (G2) | Gate of Channel 2 | Independent control input; identical threshold and drive requirements as G1 |
| Pin 6 (D2) | Drain of Channel 2 | Second switch node; fully isolated from D1 and all other pins |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two discrete low-side switches or half-bridge configurations without external isolation |
| Ultra-low gate threshold voltage | 0.6–1.2V range allows direct drive from 1.8V GPIO, eliminating level shifters in battery-powered systems |
| Low input/output leakage | IDSS ≤ 1.0µA and IGSS ≤ 10µA ensure minimal standby current in always-on circuits |
| Fast switching with low Qgd/Qg ratio | Qgd/Qg = 39% improves Miller immunity and reduces risk of shoot-through in synchronous designs |
| JEDEC-qualified reliability | Qualified per AEC-Q standards for high-reliability applications including industrial and extended-temperature environments |
Applications
| USB Power Delivery Switching | Portable Device Load Switching |
|---|---|
|
Use Scenario: Dual-path power routing in USB-C PD adapters where one channel controls VBUS and the other manages CC line protection. IC Role / Device Role / Timing Role: Discrete dual N-MOSFET performing low-loss, logic-level-controlled power path selection and fault isolation. Use Value: 1.2Ω RDS(ON) at 4.5V reduces insertion loss below 100mV at 80mA CC-line current, preserving PD communication integrity. |
Use Scenario: Independent enable control of camera module and Bluetooth radio in wearables to minimize quiescent current during sleep mode. IC Role / Device Role / Timing Role: Dual load switch providing sequenced, low-threshold power gating with independent enable signals. Use Value: Sub-1V VGS(TH) ensures full turn-on from 1.8V PMIC outputs, eliminating need for auxiliary LDOs or charge pumps. |
| Low-Voltage Synchronous Rectification | IoT Sensor Node Power Management |
|
Use Scenario: Secondary-side synchronous rectifier in 5V-output flyback converters for smart home hubs operating at 500kHz switching frequency. IC Role / Device Role / Timing Role: High-speed N-channel switch replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 44.8pF Ciss and 3.41ns tD(ON) support clean turn-on within tight dead-time windows, minimizing reverse recovery losses. |
Use Scenario: Power domain isolation for MEMS accelerometer and LoRa transceiver in battery-operated environmental sensors. IC Role / Device Role / Timing Role: Dual-channel logic-level switch enabling firmware-controlled power cycling of subsystems. Use Value: 0.68A ID rating and 480mW PD allow safe operation under peak sensor burst current (≤600mA) without thermal derating on compact PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(ON) (2.2Ω @ 4.5V), larger SOT-363 package, higher Qg (1.1nC) | Less suitable for >1MHz switching or 1.8V logic drive due to higher threshold and gate charge | Select when board space allows larger footprint and gate drive strength exceeds 100mA peak |
| AOB410L | Single-channel 30V MOSFET in TSOP-6, RDS(ON) = 1.1Ω @ 4.5V, but lacks dual configuration | Requires two devices and extra routing for dual-switch functions, increasing BOM count and layout area | Choose only if design requires asymmetrical channel sizing or independent thermal management |
Compared with DMN32D0LV-13, DMN3026LSD-13 trades switching speed and logic compatibility for higher ruggedness, while AOB410L forces duplication to achieve dual functionality-making DMN32D0LV-13 optimal for compact, high-frequency, low-voltage dual-switch applications.
Availability
DMN32D0LV-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, wearable device load switching, IoT sensor node power domains, and low-voltage synchronous rectifiers requiring stable component supply across production lifecycles.
Supply support for DMN32D0LV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and connectivity applications.
DMN32D0LV-13 belongs to Diodes' logic-level dual MOSFET product line, engineered specifically for space-constrained, low-voltage power switching in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for DMN32D0LV-13 at +85°C ambient?
At +85°C ambient temperature on a standard FR-4 PCB with 2oz copper, the continuous drain current is derated to approximately 0.47A per channel, based on thermal resistance RθJA = 261°C/W and maximum junction temperature of +150°C. This ensures safe operation without exceeding thermal limits under typical board conditions.
Can DMN32D0LV-13 be used in a half-bridge configuration?
Yes-its dual independent N-channel structure supports half-bridge implementation: Channel 1 serves as high-side switch (with bootstrap gate drive) and Channel 2 as low-side switch. However, the high-side requires gate voltage ≥ VOUT + VGS(TH), so external bootstrap circuitry is necessary; no integrated level shifter is present.
Is DMN32D0LV-13 qualified for automotive applications?
No-the DMN32D0LV-13 is not AEC-Q200 qualified. Diodes offers automotive-grade equivalents (e.g., DMN32D0LVTQ) with AEC-Q200 qualification, PPAP capability, and IATF 16949 manufacturing, but this variant is intended for industrial and commercial applications only.
What is the recommended PCB pad layout for SOT563 package reliability?
Diodes specifies a minimum pad layout with 0.50mm solder mask defined pads, 0.30mm stencil aperture, and thermal relief for the center pad (if used). The recommended land pattern uses 1.27mm × 0.67mm pads for outer terminals and 1.30mm × 1.94mm for the central thermal pad to ensure mechanical stability and thermal performance per JEDEC J-STD-020 Level 1 requirements.
DMN32D0LV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 680mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 44.8pF @ 15V
- Power - Max:
- 480mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN32D0LV-13 FAQ
1.How can I place an order for DMN32D0LV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN32D0LV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN32D0LV-13 reliable?
The price and inventory of DMN32D0LV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN32D0LV-13 is usually 5 days.
3.What payment methods are accepted for DMN32D0LV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN32D0LV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN32D0LV-13?
DMN32D0LV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN32D0LV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN32D0LV-13?
For technical support, including DMN32D0LV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN32D0LV-13 requirements.
6.How does Aetrix verify that DMN32D0LV-13 is sourced from the original manufacturer or authorized distributors?
All DMN32D0LV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN32D0LV-13 meets industry standards.
7.What is the process for return or replacement of DMN32D0LV-13?
All DMN32D0LV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN32D0LV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN32D0LV-13 part is unused and in its original packaging.
Return procedure for DMN32D0LV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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