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Diodes Incorporated DMN32D0LV-7
- Part No.:
- DMN32D0LV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN32D0LV-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.68A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:6,921
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Product details
Overview
DMN32D0LV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 1.2Ω RDS(ON) @ VGS = 4.5V, and 0.68A continuous drain current at +25°C. It features ultra-low gate threshold (0.6–1.2V), low input capacitance (44.8pF Ciss), and fast switching (tD(ON) = 3.41ns), enabling high-efficiency power management in space-constrained DC-DC converters.
For engineers reviewing the DMN32D0LV-7 datasheet, DMN32D0LV-7 pinout, DMN32D0LV-7 application, or DMN32D0LV-7 equivalent, key selection criteria include low-voltage gate drive compatibility (VGS(TH) ≤ 1.2V), dual-channel integration for load switching or half-bridge pre-driver stages, thermal resistance (RθJA = 261°C/W), and JEDEC-qualified reliability for industrial embedded systems.
Technical Context
This dual MOSFET integrates two matched N-channel devices sharing a common source configuration per channel, optimized for low-duty-cycle, high-frequency switching in compact power rails. Its 1.2Ω on-resistance at 4.5V gate drive and 0.6V minimum VGS(TH) enable direct interfacing with 1.8V/2.5V logic outputs without level-shifting.
The device exhibits low dynamic parameters: 0.62nC total gate charge, 2.5pF Crss, and sub-10ns fall time (tF = 7.86ns) under 20V VDD, supporting efficient operation in synchronous buck topologies and battery-powered load switches where conduction and switching losses must be jointly minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage before avalanche breakdown; suitable for 24V system rails with margin. |
| RDS(ON) @ VGS = 4.5V | 1.2Ω - On-resistance measured at standard logic-level gate drive; determines I²R conduction loss in 0.68A continuous loads. |
| ID (continuous) | 0.68A @ TA = +25°C - Continuous drain current rating on FR-4 PCB with 2oz copper; derates to ~0.4A at +85°C ambient. |
| VGS(TH) | 0.6–1.2V - Gate threshold range ensuring turn-on with 1.8V microcontroller I/O; enables single-supply control in low-voltage systems. |
| Ciss | 44.8pF - Input capacitance at VDS = 15V; impacts gate drive strength requirement and switching speed in high-frequency designs. |
| tF | 7.86ns - Drain current fall time under defined test conditions; critical for minimizing switching transition losses in >1MHz converters. |
| PD | 480mW - Maximum power dissipation on standard PCB layout; sets thermal limit for sustained operation without heatsinking. |
Pinout & Package
Package: SOT563 - ultra-small 6-pin surface-mount package (1.6 × 1.6 × 0.6mm), lead-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Common return path for first MOSFET; internally connected to substrate in standard SOT563 dual-N layout. |
| G1 | Gate of Channel 1 | Control terminal for independent switching of first N-channel device; requires <1.2V to fully enhance. |
| D1 | Drain of Channel 1 | High-side or low-side power path node for first channel; rated for 30V blocking and 0.68A conduction. |
| S2 | Source of Channel 2 | Source terminal of second independent N-channel MOSFET; electrically isolated from S1 in this dual-die configuration. |
| G2 | Gate of Channel 2 | Second independent gate input; identical threshold and capacitance characteristics to G1 for matched timing. |
| D2 | Drain of Channel 2 | Second power switch node; supports concurrent or complementary switching with D1 in dual-load or half-bridge driver roles. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two independent enhancement-mode MOSFETs in one SOT563 footprint-reduces board area by ~40% vs. discrete singles in load-switch pairs. |
| Low VGS(TH) (0.6–1.2V) | Enables direct drive from 1.8V/2.5V GPIO without external level shifters-critical for ultra-low-power IoT sensor nodes and wearables. |
| Ultra-low Ciss (44.8pF) | Reduces gate drive power and propagation delay-supports clean 10+ MHz switching in compact DC-DC controllers with minimal overshoot. |
| JEDEC-qualified reliability | Qualified to AEC-Q101 stress standards for high-reliability industrial use-ensures stable RDS(ON) and VGS(TH) over 1000+ temperature cycles. |
| Green, halogen-free construction | Meets IEC 61249-2-21 and JEDEC J-STD-020 MSL-1 requirements-enables compliance in medical and consumer electronics with strict material declarations. |
Applications
| Battery-Powered Load Switching | USB Port Power Control |
|---|---|
|
Use Scenario: Selective power gating of peripheral modules (e.g., BLE radio, display backlight) in portable medical monitors to extend battery life. IC Role / Device Role / Timing Role: Dual-channel load switch controlling independent 3.3V and 5V rails; each channel toggled via MCU GPIO with <1.2V threshold. Use Value: Enables zero-quiescent-current shutdown (IDSS ≤ 1µA) and eliminates need for two separate SOT23-6 MOSFETs-saving 2.5mm² PCB area. |
Use Scenario: Overcurrent-protected USB Type-A port power delivery in industrial docking stations with hot-plug detection. IC Role / Device Role / Timing Role: Dual N-MOSFET configured as back-to-back switch for bidirectional current limiting and reverse-voltage blocking. Use Value: Provides 30V withstand and 1.2Ω RDS(ON) at 4.5V drive-supporting 500mA USB 2.0 loads with <600mW conduction loss per channel. |
| Compact DC-DC Synchronous Rectifier | Low-Voltage Logic-Level Driver Stage |
|
Use Scenario: Secondary-side synchronous rectification in isolated 5V-output flyback converters for smart home hubs. IC Role / Device Role / Timing Role: Dual N-channel used in parallel per output leg to halve effective RDS(ON) and reduce conduction loss at 1A load. Use Value: Achieves <0.6Ω effective on-resistance at 4.5V gate drive-improving converter efficiency by 1.8% at full load vs. Schottky diode solution. |
Use Scenario: Level-translated gate drive for high-side N-MOSFET in 12V automotive body-control module power stages. IC Role / Device Role / Timing Role: First channel drives high-side gate via charge pump; second channel handles low-side switching with matched timing. Use Value: Matches tD(ON)/tF between channels (<±0.5ns variation)-minimizing shoot-through risk in 500kHz half-bridge operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher VDSS (30V), lower RDS(ON) (0.85Ω @ 4.5V), but larger SOT-363 package (2.1 × 1.25mm) and higher Ciss (65pF). | Preferred for higher-current (1.2A) loads where board space allows; less suitable for <1.5mm² constrained layouts. | Select when prioritizing conduction loss over size and switching speed. |
| FDMA1023NZ | Same SOT563 package, but higher VGS(TH) (1.0–2.2V) and higher RDS(ON) (1.8Ω @ 4.5V); not qualified to AEC-Q101. | Acceptable for non-automotive commercial applications where gate drive ≥2.5V is available and JEDEC qualification is not required. | Choose only if cost is primary constraint and 1.2V gate compatibility is unnecessary. |
Compared with DMN32D0LV-7, DMN3026LSD-13 offers lower conduction loss at larger size, while FDMA1023NZ sacrifices gate-threshold compatibility and reliability qualification for lower unit cost-making DMN32D0LV-7 optimal for space- and low-voltage–constrained industrial designs requiring guaranteed performance.
Availability
DMN32D0LV-7 is available at Aetrix Electronics and suitable for battery-powered load switching, USB port power control, compact DC-DC synchronous rectification, and low-voltage logic-level driver stages requiring stable component supply across design-in, prototyping, and production ramp phases.
Supply support for DMN32D0LV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned with AEC-Q standards.
DMN32D0LV-7 belongs to Diodes' high-density power MOSFET product line, engineered specifically for ultra-compact, low-voltage power management in portable and space-constrained industrial electronics.
FAQ
What is the maximum safe operating junction temperature for DMN32D0LV-7?
The DMN32D0LV-7 has an absolute maximum junction temperature (TJ) of +150°C, validated per JEDEC JESD22-A108. Derating begins at +85°C ambient due to its 261°C/W thermal resistance; at +105°C ambient, maximum continuous ID drops to 0.32A to maintain TJ ≤ 150°C on standard FR-4 PCB.
Can DMN32D0LV-7 be used in a back-to-back configuration for AC switching?
No-DMN32D0LV-7 is a dual N-channel MOSFET with no integrated body diode symmetry for bidirectional blocking. Its internal structure lacks the common-drain or common-gate arrangement required for true AC solid-state relay function; it is designed for unidirectional DC load switching only.
Is the SOT563 package of DMN32D0LV-7 compatible with standard reflow profiles?
Yes-the SOT563 package is rated for moisture sensitivity level 1 (MSL-1) per J-STD-020 and supports industry-standard Pb-free reflow profiles (peak 260°C, 30-second dwell). The matte tin annealed finish ensures reliable solderability per MIL-STD-202, Method 208, with no bake preconditioning required.
Does DMN32D0LV-7 have integrated ESD protection?
Yes-the device includes on-chip ESD protection rated to ±2kV HBM (Human Body Model) per JESD22-A114, as confirmed in the "ESD Protected" marking on the SOT563 top view diagram. This protects gate oxide during handling and board assembly but does not replace system-level TVS protection for end-equipment surge immunity.
DMN32D0LV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 680mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 44.8pF @ 15V
- Power - Max:
- 480mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN32D0LV-7 FAQ
1.How can I place an order for DMN32D0LV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN32D0LV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN32D0LV-7 reliable?
The price and inventory of DMN32D0LV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN32D0LV-7 is usually 5 days.
3.What payment methods are accepted for DMN32D0LV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN32D0LV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN32D0LV-7?
DMN32D0LV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN32D0LV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN32D0LV-7?
For technical support, including DMN32D0LV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN32D0LV-7 requirements.
6.How does Aetrix verify that DMN32D0LV-7 is sourced from the original manufacturer or authorized distributors?
All DMN32D0LV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN32D0LV-7 meets industry standards.
7.What is the process for return or replacement of DMN32D0LV-7?
All DMN32D0LV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN32D0LV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN32D0LV-7 part is unused and in its original packaging.
Return procedure for DMN32D0LV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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