Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN32D0LVQ-13

Part No.:
DMN32D0LVQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMN32D0LVQ-13.pdf
Description:
MOSFET 2N-CH 30V 0.68A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,814

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN32D0LVQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 1.2Ω RDS(ON) at VGS = 4.5V, and 0.68A continuous drain current at TA = +25°C. It features ultra-low gate threshold (0.6–1.2V), low input capacitance (44.8pF Ciss), and AEC-Q101 qualification for automotive power management.

For engineers reviewing the DMN32D0LVQ-13 datasheet, DMN32D0LVQ-13 pinout, DMN32D0LVQ-13 application, or DMN32D0LVQ-13 equivalent, key selection criteria include low-voltage gate drive compatibility (VGS(TH) ≤ 1.2V), dual-channel integration in ultra-small SOT563, and AEC-Q101 compliance for under-hood load switching.

Technical Context

This dual MOSFET integrates two matched N-channel devices in a single 6-pin SOT563 package with independent source terminals and shared thermal path. Its low 1.2Ω on-resistance at 4.5V gate drive enables efficient operation in 3.3V/5V logic-controlled loads, while sub-1V typical VGS(TH) supports direct microcontroller GPIO driving without level shifting.

The device exhibits fast switching (tD(ON) = 3.41ns, tF = 7.86ns) and low dynamic losses (Qg = 0.62nC), optimized for high-frequency DC-DC converter synchronous rectification and automotive body electronics such as LED driver current sinks and solenoid pre-driver stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - Supports 24V automotive systems with 25% margin against transients.
RDS(ON) @ VGS = 4.5V 1.2Ω - Enables ≤800mW conduction loss at 0.68A, suitable for space-constrained PCBs.
VGS(TH) 0.6–1.2V - Ensures full enhancement with 1.8V/2.5V/3.3V I/O domains without gate drivers.
Ciss 44.8pF - Reduces gate drive power and improves EMI performance in >1MHz switching.
PD 480mW - Delivers 0.68A continuous current on standard FR-4 with 2oz copper pad layout.
TJ Range −55°C to +150°C - Validated for engine bay and transmission control module environments.

Pinout & Package

Package: SOT563 - ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), lead-free, halogen-free, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (S1) Source of Channel 1 Independent return path for first MOSFET; requires dedicated PCB trace for current sensing or Kelvin connection.
2 (G1) Gate of Channel 1 Low-threshold input accepting 1.8V logic; routed with controlled impedance to minimize ringing.
3 (D1) Drain of Channel 1 High-side or low-side switching node; thermally coupled to package backside via exposed pad (not electrically connected).
4 (D2) Drain of Channel 2 Second independent high-current node; enables dual-load control (e.g., H-bridge half-bridge legs).
5 (G2) Gate of Channel 2 Electrically isolated gate input; allows independent PWM control of second channel.
6 (S2) Source of Channel 2 Separate source terminal enabling floating-source configurations or current mirror topologies.

Key Features

Feature Design Value
Dual N-channel topology Two matched MOSFETs in one footprint reduce board area by 40% vs. discrete SOT23 solutions.
Ultra-low VGS(TH) Guaranteed ≤1.2V ensures reliable turn-on with 1.8V FPGA I/O or automotive microcontroller outputs.
Low Ciss/Coss ratio 44.8pF/4.6pF minimizes Miller effect, enabling stable 2MHz+ switching in buck converters.
AEC-Q101 qualification Validated for automotive applications including junction temperature cycling, ESD (HBM ≥2kV), and HTOL stress.
SOT563 thermal resistance RθJA = 261°C/W enables 0.68A operation without heatsink on minimal copper area.

Applications

Automotive Body Control Module USB-C Power Delivery Load Switch

Use Scenario: Controlling interior lighting, door locks, and window lift motors in 12V/24V vehicle architectures.

IC Role / Device Role / Timing Role: Dual low-side switch managing two independent 0.6A resistive/inductive loads with independent enable timing.

Use Value: Eliminates need for two separate SOT23-3 MOSFETs and associated gate resistors, reducing BOM count and layout area by 35%.

Use Scenario: Enabling/disabling VBUS power paths in USB-C PD sink applications with strict inrush control.

IC Role / Device Role / Timing Role: Dual-channel load switch providing independent VBUS and VCONN power gating with coordinated soft-start sequencing.

Use Value: Leverages matched RDS(ON) and low Qg to limit inrush dI/dt to <1.5A/µs while maintaining <100mV dropout at 0.6A.

Industrial Sensor Interface Medical Wearable Power Management

Use Scenario: Multiplexing analog sensor signals (e.g., thermistors, RTDs) in battery-powered data loggers.

IC Role / Device Role / Timing Role: Dual-channel analog switch isolating sensor bias paths during measurement cycles to reduce leakage-induced offset error.

Use Value: Sub-1µA IDSS and 1.4V VSD ensure <0.5% gain error in 16-bit ADC front-ends at room temperature.

Use Scenario: Managing power to Bluetooth LE radios, optical heart-rate sensors, and display drivers in compact wearables.

IC Role / Device Role / Timing Role: Dual low-quiescent-power load switch enabling rapid power domain isolation between active and sleep states.

Use Value: 0.6V VGS(TH) minimum allows direct control from 1.2V PMIC outputs, eliminating level shifters and saving 0.15mm² PCB area per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3026LSD-13 Higher RDS(ON) (2.2Ω @ 4.5V), larger SOT23-6 package, same AEC-Q101 rating. Less suitable for space-constrained layouts; higher conduction loss limits max current to 0.45A. Select when board real estate permits larger footprint and lower gate charge is not required.
FDMA1023NZ Lower RDS(ON) (0.95Ω @ 4.5V), but VGS(TH) min = 1.0V and no AEC-Q101 certification. Not qualified for automotive use; requires 2.5V+ logic for guaranteed turn-on. Choose only for industrial or consumer applications where AEC-Q101 is not mandated.

Compared with DMN32D0LVQ-13, DMN3026LSD-13 trades package size for reduced thermal resistance, while FDMA1023NZ offers lower on-resistance but lacks automotive qualification and has higher gate threshold-making DMN32D0LVQ-13 optimal for AEC-Q101-compliant, space-sensitive, low-voltage-gate-drive designs.

Availability

DMN32D0LVQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery load switching, industrial sensor multiplexing, and medical wearable power management requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN32D0LVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN32D0LVQ belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for low-voltage, high-density automotive power switching in body control, lighting, and infotainment subsystems.

FAQ

Is DMN32D0LVQ-13 pin-compatible with other SOT563 dual MOSFETs?

No-DMN32D0LVQ-13 uses a non-standard pinout: S1-G1-D1-D2-G2-S2. Unlike common SOT563 dual MOSFETs (e.g., DMP2035U, which uses G1-S1-D1-D2-S2-G2), its gate and source assignments differ. Layout must follow the official Diodes SOT563 top-view diagram to avoid functional failure.

What is the maximum continuous drain current at 85°C ambient?

At TA = 85°C, derated current is 0.47A per channel, calculated using RθJA = 261°C/W and TJ(max) = 150°C. This assumes FR-4 board with 2oz copper and minimum recommended pad layout per Diodes' datasheet Figure 5.

Does DMN32D0LVQ-13 support reverse battery protection?

No-it lacks integrated body diode orientation for reverse polarity protection. The internal source-drain diodes conduct from source to drain (S→D), making it unsuitable as a standalone reverse-battery protector. External P-channel or ideal diode controllers are required for that function.

Can both channels be paralleled to increase current handling?

Not recommended-channels are not internally matched for parallel operation. RDS(ON) mismatch (±20% typical) and independent thermal coupling cause unequal current sharing. For higher current, use a single-channel MOSFET with appropriate RDS(ON) and thermal design.

DMN32D0LVQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
680mA (Ta)
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
44.8pF @ 15V
Power - Max:
480mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMN32D0LVQ-13 FAQ

1.How can I place an order for DMN32D0LVQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN32D0LVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN32D0LVQ-13 reliable?

The price and inventory of DMN32D0LVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN32D0LVQ-13 is usually 5 days.

3.What payment methods are accepted for DMN32D0LVQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN32D0LVQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN32D0LVQ-13?

DMN32D0LVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN32D0LVQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN32D0LVQ-13?

For technical support, including DMN32D0LVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN32D0LVQ-13 requirements.

6.How does Aetrix verify that DMN32D0LVQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN32D0LVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN32D0LVQ-13 meets industry standards.

7.What is the process for return or replacement of DMN32D0LVQ-13?

All DMN32D0LVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN32D0LVQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN32D0LVQ-13 part is unused and in its original packaging.

Return procedure for DMN32D0LVQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN32D0LVQ-13 Tags

  • DMN32D0LVQ-13
  • DMN32D0LVQ-13 PDF
  • DMN32D0LVQ-13 Datasheet
  • DMN32D0LVQ-13 Specifications
  • DMN32D0LVQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN32D0LVQ-13
  • Buy DMN32D0LVQ-13
  • DMN32D0LVQ-13 Price
  • DMN32D0LVQ-13 Distributor
  • DMN32D0LVQ-13 Supplier
  • DMN32D0LVQ-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER