Diodes Incorporated DMN32D0LVQ-7
- Part No.:
- DMN32D0LVQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN32D0LVQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.68A SOT563
- Quantity:
- Payment:

- Shipping:

Inventory:5,205
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Product details
Overview
DMN32D0LVQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 1.2Ω RDS(ON) @ 4.5V VGS, and 0.68A continuous drain current at +25°C. It features ultra-low gate threshold (0.6–1.2V), AEC-Q101 qualification, and is designed for space-constrained automotive power management circuits such as LED drivers and load switches.
For engineers reviewing the DMN32D0LVQ-7 datasheet, DMN32D0LVQ-7 pinout, DMN32D0LVQ-7 application, or DMN32D0LVQ-7 equivalent, key selection criteria include low-voltage gate drive compatibility (≤2.5V logic), dual-channel integration in ultra-small SOT563, thermal performance under automotive ambient conditions (−55°C to +150°C), and PPAP-ready supply chain traceability.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single 6-pin SOT563 package, sharing common source terminals per channel (S1/D2 and S2/D1 configuration). Its low 1.2Ω on-resistance at 4.5V VGS and sub-1V typical VGS(TH) enable direct interfacing with 1.8V/2.5V microcontroller GPIOs without level-shifting.
The device exhibits fast switching (tD(ON) = 3.41ns, tF = 7.86ns) and low dynamic capacitance (Ciss = 44.8pF, Coss = 4.6pF), supporting high-frequency PWM control in compact DC-DC and LED dimming applications while maintaining <1µA IDSS leakage at 30V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V automotive rail operation with 2× safety margin against transients |
| RDS(ON) @ 4.5V | 1.2Ω - enables ≤0.35W conduction loss at 0.6A, suitable for thermally constrained PCB layouts |
| VGS(TH) | 0.6–1.2V - ensures reliable turn-on with 1.8V logic outputs and reduces gate drive power |
| ID Continuous | 0.68A @ +25°C - sufficient for low-power solenoid, sensor bias, and LED channel switching |
| PD | 480mW - defined on FR-4 with 2oz copper and minimum pad layout, limiting self-heating in SOT563 |
| Ciss | 44.8pF - minimizes gate drive current demand and improves switching efficiency above 100kHz |
| TJ Range | −55°C to +150°C - meets extended temperature requirements for under-hood automotive modules |
Pinout & Package
Package: SOT563 - ultra-small 6-pin surface-mount package (1.60 × 1.60 × 0.60 mm), lead-free, halogen-free, and RoHS-compliant. Moisture sensitivity level 1 (J-STD-020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side switch node for first N-MOSFET; connects to load or supply rail |
| 2 (G1) | Gate of Channel 1 | Logic-level input controlling Channel 1; requires <10µA IGSS max at ±10V |
| 3 (S1/D2) | Source of Channel 1 / Drain of Channel 2 | Internally tied node enabling cascode or dual-switch topologies; electrically isolated in layout |
| 4 (G2) | Gate of Channel 2 | Independent logic-level input for second N-MOSFET; identical VGS(TH) and RDS(ON) specs |
| 5 (S2) | Source of Channel 2 | Common return path for Channel 2; must be routed with low-inductance ground plane |
| 6 (D2/S1) | Drain of Channel 2 / Source of Channel 1 | Same internal node as Pin 3 - confirms symmetrical dual-channel structure with shared terminal |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two independent 30V/0.68A MOSFETs in one SOT563 footprint - reduces board area by >40% vs. discrete solutions |
| Low VGS(TH) | 0.6–1.2V threshold - guarantees turn-on with 1.8V I/O rails and eliminates need for gate boosters |
| Ultra-low Ciss | 44.8pF - cuts gate charge (Qg = 0.62nC) and enables <10ns switching transitions at low drive strength |
| AEC-Q101 qualification | Qualified for automotive use with full PPAP documentation and IATF16949 manufacturing - supports ASIL-B system integration |
| Thermal resistance | RθJA = 261°C/W - enables stable operation up to +125°C ambient when using recommended 2oz copper pad layout |
Applications
| Automotive LED Headlamp Dimming | Body Control Module Load Switching |
|---|---|
|
Use Scenario: PWM-controlled current regulation for dual-beam LED arrays in headlamps, requiring precise brightness control and thermal resilience. IC Role / Device Role / Timing Role: Dual-channel low-side switch driving separate high-brightness LED strings; each channel handles independent PWM timing at 1–20kHz. Use Value: 1.2Ω RDS(ON) limits conduction loss to <0.5W per channel, while −55°C to +150°C rating ensures reliability in under-hood environments. |
Use Scenario: Controlled power delivery to door lock actuators, window lift motors, and interior lighting in centralized body control units. IC Role / Device Role / Timing Role: Dual N-MOSFET load switch managing two independent 12V loads; driven by MCU GPIOs with <1.2V VGS(TH). Use Value: Low gate threshold enables direct 2.5V/3.3V MCU control; 0.68A rating supports peak actuator currents without external drivers. |
| Infotainment System Power Sequencing | ADAS Camera Power Management |
|
Use Scenario: Staged power-up of display backlight, audio amplifier, and USB interface ICs in automotive infotainment head units. IC Role / Device Role / Timing Role: Dual-channel sequencing switch enabling time-delayed enable signals via RC networks on G1/G2 pins. Use Value: Matched channel characteristics ensure consistent turn-on timing; 480mW PD allows sustained 0.5A load current during boot sequences. |
Use Scenario: Isolated power switching for front/rear camera modules in driver-assistance systems, requiring fault-tolerant dual-path control. IC Role / Device Role / Timing Role: Redundant N-MOSFET pair supplying 5V/3.3V camera rails; operated independently for fail-safe operation. Use Value: AEC-Q101 qualification and 150°C TJ support continuous operation in sealed camera housings exposed to solar loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN32D0LQ-7 | Same die, but in SOT26 package (larger footprint, higher RθJA = 300°C/W) | Less suitable for ultra-dense automotive PCBs; lower thermal performance in confined spaces | Select when board layout allows larger package and higher thermal margin is acceptable |
| NTJD4152PZ | Higher RDS(ON) (2.4Ω @ 4.5V), wider VGS(TH) range (0.5–1.5V), same SOT563 | Lower efficiency at 0.6A; less predictable turn-on with 1.8V logic; not AEC-Q101 qualified | Choose only for non-automotive cost-sensitive designs where AEC compliance is unnecessary |
Compared with DMN32D0LVQ-7, DMN32D0LQ-7 trades miniaturization for easier hand-soldering and slightly relaxed thermal constraints, while NTJD4152PZ offers SOT563 compatibility but lacks automotive qualification and delivers 100% higher conduction loss at rated current.
Availability
DMN32D0LVQ-7 is available at Aetrix Electronics and suitable for automotive LED drivers, body control module load switching, and ADAS camera power management requiring stable component supply across production lifecycles.
Supply support for DMN32D0LVQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN32D0LVQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space- and power-constrained automotive subsystems requiring robust low-voltage switching.
FAQ
What is the maximum continuous drain current for DMN32D0LVQ-7 at +125°C ambient?
At +125°C ambient temperature, the maximum continuous drain current is derated to approximately 0.35A due to thermal limitations of the SOT563 package and its 261°C/W junction-to-ambient thermal resistance. This value assumes FR-4 PCB with 2oz copper and minimum recommended pad layout per datasheet Figure 5.
Can DMN32D0LVQ-7 be used in a high-side switch configuration?
No - DMN32D0LVQ-7 is a dual N-channel MOSFET with no integrated charge pump or bootstrap circuitry. Its gate threshold voltage and lack of floating supply make it unsuitable for high-side switching; it is designed exclusively for low-side or source-follower configurations where the source is referenced to ground or a stable potential.
Is the SOT563 package of DMN32D0LVQ-7 compatible with standard reflow profiles?
Yes - the SOT563 package is rated for moisture sensitivity level 1 (J-STD-020), meaning it can be stored indefinitely at ≤30°C/85% RH and processed using standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without baking or special handling.
Does DMN32D0LVQ-7 include ESD protection on its gate terminals?
Yes - the device incorporates built-in ESD protection on all gate terminals, as indicated by "ESD Protected" marking on the top-view schematic in the datasheet. It meets HBM ≥2kV and CDM ≥1kV specifications, eliminating need for external gate protection in typical automotive PCB layouts.
DMN32D0LVQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 680mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 44.8pF @ 15V
- Power - Max:
- 480mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN32D0LVQ-7 FAQ
1.How can I place an order for DMN32D0LVQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN32D0LVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN32D0LVQ-7 reliable?
The price and inventory of DMN32D0LVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN32D0LVQ-7 is usually 5 days.
3.What payment methods are accepted for DMN32D0LVQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN32D0LVQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN32D0LVQ-7?
DMN32D0LVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN32D0LVQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN32D0LVQ-7?
For technical support, including DMN32D0LVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN32D0LVQ-7 requirements.
6.How does Aetrix verify that DMN32D0LVQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN32D0LVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN32D0LVQ-7 meets industry standards.
7.What is the process for return or replacement of DMN32D0LVQ-7?
All DMN32D0LVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN32D0LVQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN32D0LVQ-7 part is unused and in its original packaging.
Return procedure for DMN32D0LVQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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