Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN32D4SDW-7

Name: DMN32D4SDW-7
Brand: Diodes Incorporated
SKU: DMN32D4SDW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMN32D4SDW-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: DMN32D4SDW-7.pdf

Description:: MOSFET 2N-CH 30V 0.65A SOT363

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:16,388

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMN32D4SDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V V_DSS, 0.4Ω R_DS(ON) @ 10V_GS, and 0.65A continuous drain current at 25°C - optimized for compact DC-DC converters and LED backlighting circuits where low gate charge (1.3nC) and fast switching (t_on = 2.8ns) reduce conduction and switching losses.

For engineers reviewing the DMN32D4SDW-7 datasheet, DMN32D4SDW-7 pinout, DMN32D4SDW-7 application, or DMN32D4SDW-7 equivalent, key selection criteria include dual-channel integration in 3mm² footprint, guaranteed ESD protection on gate terminals, temperature-stable R_DS(ON) up to 150°C, and compatibility with 3.3V/5V logic-level drive in space-constrained power stages.

Technical Context

This dual MOSFET integrates two independent N-channel silicon devices sharing no internal connection - each channel features isolated source, drain, and gate terminals with integrated gate-protection diodes. Its low input capacitance (C_iss = 50pF) and minimal reverse transfer capacitance (C_rss = 6.8pF) enable clean turn-on/turn-off behavior under high-frequency PWM control.

The device operates across –55°C to +150°C junction temperature range, with R_DS(ON) increasing only 1.6× from 25°C to 125°C at V_GS = 4.5V, supporting thermally demanding motor control and portable power management without derating penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - supports 24V rail systems with 20% margin against transients
R_DS(ON) @ 10V_GS	0.4Ω max - limits I²R loss to ≤106mW at 0.5A load in each channel
Q_g @ 10V_GS	1.3nC - enables efficient 1MHz+ switching with <1.3µA gate drive current
t_D(on)	2.8ns - reduces dead-time requirements in synchronous buck topologies
P_D (FR-4, 2oz Cu)	0.35W - allows 0.5A operation at ambient ≤60°C without heatsink
V_GS(th)	0.8–1.6V - ensures reliable turn-on with 1.8V/3.3V microcontroller GPIO
C_iss	50pF - minimizes Miller effect-induced shoot-through risk in half-bridge layouts

Pinout & Package

Package: SOT363 - surface-mount, 6-pin, 2.1mm × 1.3mm × 0.9mm body with matte tin-plated Alloy42 leadframe; UL 94V-0 rated green molding compound; moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source of Q1	Low-side return path for first MOSFET; internally unconnected to other terminals
D1	Drain of Q1	Power output node for Q1; connects to load or inductor in buck stage
G1	Gate of Q1	Logic-controlled terminal with integrated ESD diode to S1 and D1
S2	Source of Q2	Independent return path for second MOSFET; electrically isolated from S1
D2	Drain of Q2	Second power switch node; usable for dual-phase or redundant load control
G2	Gate of Q2	Separate control input with identical ESD protection as G1

Key Features

Feature	Design Value
Dual independent N-channel topology	Enables two separate low-side switches in one 3mm² footprint - eliminates board space for discrete dual-MOSFET layout
ESD-protected gates (HBM >2kV)	Prevents field failure during PCB assembly and handling without external TVS components
Low C_iss/C_rss ratio (50pF / 6.8pF)	Reduces gate-drive energy and improves immunity to dv/dt-induced false turn-on
R_DS(ON) stable over temperature	Varies only ±15% from –55°C to +125°C at V_GS = 4.5V - simplifies thermal design in automotive cabin modules
Lead-free, halogen-free, RoHS-compliant	Meets IPC-J-STD-020 Level 1 reflow profile and JEDEC green standards for consumer and industrial end equipment

Applications

Motor Control

DC-DC Converters

Use Scenario: Driving small brushed DC motors in battery-powered IoT actuators requiring bidirectional control via H-bridge configuration.

IC Role / Device Role / Timing Role: Dual low-side switch implementing phase and enable control with independent gate timing.

Use Value: 0.7Ω R_DS(ON) @ 4.5V_GS enables full torque delivery from 3.3V MCU outputs without level-shifting circuitry.

Use Scenario: Synchronous rectification in 5V-input, 3.3V-output buck converters for FPGA core supplies.

IC Role / Device Role / Timing Role: Second MOSFET replaces Schottky diode to reduce conduction loss; first MOSFET serves as high-side switch driver companion.

Use Value: 1.3nC total gate charge cuts gate-drive power by 60% versus comparable 1.8Ω single-channel MOSFETs at 2MHz switching.

LED Backlighting

Power Management Functions

Use Scenario: Current regulation for white LED strings in portable display backlight modules with PWM dimming.

IC Role / Device Role / Timing Role: Low-side current sink with fast turn-off (t_f = 22.8ns) to preserve PWM duty-cycle fidelity at 20kHz.

Use Value: 0.4Ω R_DS(ON) @ 10V_GS maintains <±2% current accuracy across 0.1–0.5A range with minimal thermal drift.

Use Scenario: Load switching for USB-C power delivery auxiliary rails (VCONN, VBUS discharge).

IC Role / Device Role / Timing Role: Dual-channel hot-swap controller enabling independent enable/disable of two 5V subsystems.

Use Value: Independent gate control allows staggered startup sequencing to limit inrush current to <100mA per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSDW-7	30V V_DSS, 0.26Ω R_DS(ON) @ 4.5V_GS, higher Q_g (2.1nC)	Better conduction efficiency below 0.3A but slower switching due to higher capacitance	Select when thermal budget dominates over switching frequency constraints
SI2302DS-T1-GE3	20V V_DSS, 0.085Ω R_DS(ON) @ 4.5V_GS, single-channel SOT-23	Limited to lower-voltage rails; requires two devices for dual functionality	Choose only if system voltage ≤16V and board area permits discrete duplication

Compared with DMN32D4SDW-7, DMN3026LSDW-7 trades faster switching for lower R_DS(ON), while SI2302DS-T1-GE3 sacrifices voltage rating and integration density to achieve ultra-low on-resistance - making DMN32D4SDW-7 optimal for 24V-compatible, space-limited, medium-frequency power stages.

Availability

DMN32D4SDW-7 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and LED backlighting requiring stable component supply across extended temperature ranges and high-volume production cycles.

Supply support for DMN32D4SDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMN32D4SDW-7 belongs to Diodes' "PowerMOS" dual-MOSFET product line, engineered specifically for miniaturized, high-efficiency power conversion in portable and space-constrained applications.

FAQ

What is the maximum safe operating junction temperature for DMN32D4SDW-7?

The absolute maximum junction temperature is +150°C, and the device is characterized for stable R_DS(ON) performance up to this limit. Thermal resistance R_θJA is 360°C/W on 1"×1" FR-4 with 2oz copper, allowing 0.35W dissipation at 25°C ambient - derating curves in Figure 5 confirm usable current down to 0.25A at 100°C ambient.

Can DMN32D4SDW-7 be driven directly from a 3.3V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) ranges from 0.8V to 1.6V, and R_DS(ON) is specified at 4.5V_GS (0.7Ω) and 2.5V_GS (0.9Ω). At 3.3V, typical R_DS(ON) is ~0.8Ω, delivering 0.45A with <160mW conduction loss - sufficient for most low-power switching loads.

Does DMN32D4SDW-7 include body diodes, and are they rated for continuous conduction?

Each channel includes an intrinsic body diode with 0.4A maximum continuous forward current (I_S). The diode forward voltage is 0.8–1.2V at 0.23A and 25°C, and Figure 9 shows it remains functional up to 150°C - suitable for freewheeling in inductive loads but not intended for sustained rectification above 0.3A.

Is the SOT363 package of DMN32D4SDW-7 compatible with standard reflow profiles?

Yes - the device meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for standard lead-free reflow (peak 260°C, 60s max above 217°C). Its green molding compound passes UL 94V-0 flammability testing, and the matte tin finish ensures reliable solder wetting per MIL-STD-202 Method 208.

DMN32D4SDW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 650mA

Rds On (Max) @ Id, Vgs:: 400mOhm @ 250mA, 10V

Vgs(th) (Max) @ Id:: 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 50pF @ 15V

Power - Max:: 290mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-363

DMN32D4SDW-7 FAQ

1.How can I place an order for DMN32D4SDW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN32D4SDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN32D4SDW-7 reliable?

The price and inventory of DMN32D4SDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN32D4SDW-7 is usually 5 days.

3.What payment methods are accepted for DMN32D4SDW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN32D4SDW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN32D4SDW-7?

DMN32D4SDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN32D4SDW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN32D4SDW-7?

For technical support, including DMN32D4SDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN32D4SDW-7 requirements.

6.How does Aetrix verify that DMN32D4SDW-7 is sourced from the original manufacturer or authorized distributors?

All DMN32D4SDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN32D4SDW-7 meets industry standards.

7.What is the process for return or replacement of DMN32D4SDW-7?

All DMN32D4SDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN32D4SDW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN32D4SDW-7 part is unused and in its original packaging.

Return procedure for DMN32D4SDW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…