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Diodes Incorporated DMN32M6LCA8-7
- Part No.:
- DMN32M6LCA8-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SMD, No Lead
- Datasheet:
-
DMN32M6LCA8-7.pdf
- Description:
- MOSFET 2N-CH 30V 30A X4-DSN6025
- Quantity:
- Payment:
- Shipping:
Inventory:6,090
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Product details
Overview
DMN32M6LCA8-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management, featuring 30V VSSS, 2.0 mΩ RSS(ON) @ VGS = 10V, 30A continuous IS at +25°C, and a compact X4-DSN6025-8 package. It serves as a low-profile load switch or battery protection device in space-constrained portable electronics.
For engineers reviewing the DMN32M6LCA8-7 datasheet, DMN32M6LCA8-7 pinout, DMN32M6LCA8-7 application, or DMN32M6LCA8-7 equivalent, key selection criteria include its ultra-low on-resistance at 4.5V gate drive (2.6 mΩ), dual-gate/dual-source configuration for paralleled conduction paths, and AEC-Q101 readiness for automotive-grade reliability assessment.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve simultaneous low RSS(ON) and controlled gate charge (Qg = 42.7 nC), enabling fast switching with minimal conduction loss. Its dual-drain/dual-source layout supports symmetrical current sharing across two parallel internal die segments.
The device integrates ESD protection on the gate terminals and operates over –55°C to +150°C junction temperature range. Thermal resistance RθJA is 39°C/W under standard FR-4 PCB mounting, confirming suitability for thermally dense battery management modules where thermal cycling stability is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VSSS | 30 V - Maximum source-source blocking voltage; defines safe operating range in 12–24V battery systems. |
| RSS(ON) @ VGS = 4.5V | 2.6 mΩ - Enables ≥22A continuous conduction at logic-level gate drive, reducing heat generation in USB-C PD and power bank designs. |
| IS (max, TA = +25°C) | 30 A - Supports high-current load switching without external heatsinking in compact PCB layouts. |
| Qg | 42.7 nC - Balances switching speed and gate driver loading; allows efficient operation up to 1 MHz in synchronous buck stages. |
| Package | X4-DSN6025-8 - 6.0 × 2.5 mm footprint with 0.18 mm height; compatible with fine-pitch automated assembly and ultra-thin end equipment. |
| VGS(TH) | 1.3–2.2 V - Ensures reliable turn-on with standard 3.3V or 5V microcontroller GPIOs, eliminating need for level-shifting circuitry. |
| Ciss | 2780 pF - Predictable input capacitance enables stable gate drive design and accurate timing in high-frequency DC-DC controllers. |
Pinout & Package
Package: X4-DSN6025-8 - ultra-thin dual-side thermal-enhanced leadless package with NiAu-plated terminals and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source 1) | Source terminal of first MOSFET segment | Provides dedicated current return path; electrically isolated from Source 2 to support independent routing or Kelvin sensing. |
| 2 (Gate 1) | Gate of first MOSFET segment | Enables independent control or paralleling with Gate 2; supports split-gate drive for reduced EMI in high-dI/dt applications. |
| 3 (Source 1) | Second connection to same source node | Dual-source bonding reduces package inductance and improves current sharing between internal die segments. |
| 4 (Drain) | Common drain node for both segments | Single high-current output node simplifies PCB layout and minimizes trace inductance in high-power switching nodes. |
| 5 (Drain) | Redundant drain connection | Enhances current-carrying capacity and thermal dissipation through dual drain pads on opposite sides of package. |
| 6 (Source 2) | Source terminal of second MOSFET segment | Allows differential source routing or separate ground plane partitioning to suppress noise coupling in sensitive analog sections. |
| 7 (Gate 2) | Gate of second MOSFET segment | Permits gate signal redundancy or staggered turn-on for reduced peak current transients during hot-swap events. |
| 8 (Source 2) | Second connection to same source node | Matches Pin 3 function for symmetric layout; ensures balanced thermal and electrical performance across both internal channels. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.18 mm typical height) | Enables integration into <1.0 mm total thickness devices such as slim smartphones, wearables, and foldable displays. |
| ESD-protected gate structure | Withstands ±20V HBM ESD per JEDEC JS-001, eliminating need for external gate protection diodes in handheld product designs. |
| Dual-gate/dual-source architecture | Supports independent gate control or paralleled operation, improving system-level fault tolerance and current scalability. |
| Lead-free, halogen- and antimony-free "Green" construction | Meets RoHS 3 (2015/863/EU) and automotive PPAP requirements; certified for use in medical and transportation electronics. |
| Low RSS(ON) at 4.5V drive | Delivers 22A continuous current with standard logic-level drivers-reducing BOM count versus discrete level-shifters or gate drivers. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Overcurrent and short-circuit protection in lithium-ion battery packs for power tools and e-bikes. IC Role / Device Role / Timing Role: High-side load switch controlling main battery discharge path; responds within microseconds to fault signals from protection ICs. Use Value: 2.6 mΩ RSS(ON) at 4.5V gate drive minimizes voltage drop and self-heating during sustained 20A loads, extending pack runtime and cycle life. |
Use Scenario: Bidirectional power path control in USB-C PD 3.1 sink applications requiring 28V/5A capability. IC Role / Device Role / Timing Role: Low-inductance, dual-drain configured switch managing VBUS connection between port controller and system rail. Use Value: Dual-drain pins reduce loop inductance by >30% versus single-drain equivalents, suppressing voltage overshoot during hot-plug transitions. |
| Smartphone Power Management Unit | Automotive Body Control Module |
|
Use Scenario: Load switching for display backlight, camera flash, and RF front-end power rails in modern smartphones. IC Role / Device Role / Timing Role: Compact, low-RSS(ON) switch enabling rapid enable/disable cycles synchronized to SoC power states. Use Value: 0.18 mm height allows placement beneath OLED panels; 1.3–2.2 V VGS(TH) ensures clean turn-on with 1.8V/3.3V PMIC outputs. |
Use Scenario: 12V load switching for LED lighting, window lift motors, and HVAC actuators in IATF 16949-certified BCMs. IC Role / Device Role / Timing Role: AEC-Q101 qualified MOSFET used in redundant power distribution networks with diagnostic feedback. Use Value: –55°C to +150°C operating range and 30V VSSS withstand capability ensure robustness against load dump transients and cold-cranking conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN32M6LH-7 | Same die, but in X1-DSN2020-6 package (2.0 × 2.0 mm); RSS(ON) = 2.8 mΩ @ 4.5V; 20A IS. | Smaller footprint but higher RSS(ON) and lower current rating; suited for space-limited but lower-power nodes. | Select when board area is constrained more than thermal budget; verify thermal derating for >15A continuous loads. |
| SI2302DS-T1-BE3 | SOT-23 package; RSS(ON) = 45 mΩ @ 4.5V; 3.2A IS; no dual-gate/dual-source architecture. | Legacy single-channel topology; lacks ESD protection and thermal performance for high-current battery switches. | Only suitable for sub-5A auxiliary loads; avoid in primary battery path due to excessive conduction loss and thermal risk. |
Compared with DMN32M6LH-7, the DMN32M6LCA8-7 delivers 15% lower RSS(ON) and 50% higher current capacity in a slightly larger but thermally superior package; versus SI2302DS-T1-BE3, it provides 17× lower on-resistance and integrated ESD protection-critical for production-grade battery safety compliance.
Availability
DMN32M6LCA8-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and automotive body control units requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for DMN32M6LCA8-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
This MOSFET belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power switching in portable, automotive, and industrial applications demanding minimal conduction loss and robust thermal performance.
FAQ
What is the maximum continuous source current at +70°C ambient?
At TA = +70°C, the DMN32M6LCA8-7 supports 24A continuous source current with VGS = 10V and 17A with VGS = 4.5V, per the Absolute Maximum Ratings table. These values assume mounting on FR-4 PCB with minimum recommended pad layout and account for thermal derating above +25°C ambient.
Does this MOSFET require external gate resistors for EMI suppression?
No external gate resistor is required for basic operation, as the device's Qg = 42.7 nC and Crss = 184 pF yield inherently low dV/dt-induced ringing. However, a 2.2–10 Ω series gate resistor is recommended in high-speed (>500 kHz) synchronous buck converters to dampen gate oscillation and reduce EMI emissions.
Can DMN32M6LCA8-7 be used in reverse conduction mode (source-to-drain)?
Yes-the MOSFET's intrinsic body diode supports forward conduction with VSD ≤ 1.2 V at IS = 10A, and its symmetrical dual-source/dual-gate layout allows bidirectional current flow in applications like USB-C DRP. However, reverse conduction is not rated for repetitive pulsed operation beyond 129A ISM.
Is the X4-DSN6025-8 package compatible with standard reflow profiles?
Yes-the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 sec max). Its NiAu finish ensures solderability per MIL-STD-202, Method 208, and the 0.18 mm height avoids tombstoning on fine-pitch land patterns.
DMN32M6LCA8-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel, Common Drain
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 42.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2780pF @ 15V
- Power - Max:
- 1.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X4-DSN6025-8
DMN32M6LCA8-7 FAQ
1.How can I place an order for DMN32M6LCA8-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN32M6LCA8-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN32M6LCA8-7 reliable?
The price and inventory of DMN32M6LCA8-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN32M6LCA8-7 is usually 5 days.
3.What payment methods are accepted for DMN32M6LCA8-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN32M6LCA8-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN32M6LCA8-7?
DMN32M6LCA8-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN32M6LCA8-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN32M6LCA8-7?
For technical support, including DMN32M6LCA8-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN32M6LCA8-7 requirements.
6.How does Aetrix verify that DMN32M6LCA8-7 is sourced from the original manufacturer or authorized distributors?
All DMN32M6LCA8-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN32M6LCA8-7 meets industry standards.
7.What is the process for return or replacement of DMN32M6LCA8-7?
All DMN32M6LCA8-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN32M6LCA8-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN32M6LCA8-7 part is unused and in its original packaging.
Return procedure for DMN32M6LCA8-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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