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Diodes Incorporated DMN33D8LDW-13
- Part No.:
- DMN33D8LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN33D8LDW-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.25A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:5,757
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Product details
Overview
DMN33D8LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V V(BR)DSS, with RDS(ON) of 3.0Ω @ 4.5V VGS and 250mA continuous drain current at +25°C. It integrates two matched low-RDS(ON) switches optimized for compact DC-DC converters and LED backlighting circuits where space-constrained dual-switch topology is required.
For engineers reviewing the DMN33D8LDW-13 datasheet, DMN33D8LDW-13 pinout, DMN33D8LDW-13 application, or DMN33D8LDW-13 equivalent, key selection criteria include gate threshold voltage (0.8–1.5V), input capacitance (48pF), ESD protection (2kV HBM), AEC-Q101 qualification, and thermal resistance (360°C/W) under FR-4 PCB mounting conditions.
Technical Context
This dual MOSFET uses planar silicon process to achieve matched channel characteristics across both devices, enabling symmetrical switching in half-bridge or dual-load configurations. Its low gate charge (0.55nC @ 4.5V) and fast switching times (tD(on) = 2.9ns, tf = 13.6ns) support high-frequency operation up to 1MHz in synchronous buck regulators.
The device features integrated body diodes with 1.2V forward voltage at 115mA and supports bidirectional current flow in motor control H-bridge legs. Thermal design is constrained by its 0.35W power dissipation limit at +25°C ambient on standard 1"×1" FR-4 board, requiring careful layout for junction temperature control below 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 24V rail applications. |
| RDS(ON) max | 3.0Ω @ VGS = 4.5V - On-resistance measured at logic-level gate drive; determines conduction loss in battery-powered systems. |
| ID max | 250mA @ TA = +25°C - Continuous DC current per channel; sets maximum load capability without derating. |
| Ciss | 48pF - Input capacitance at VDS = 5V; directly impacts gate drive power and switching speed in high-frequency designs. |
| Qg | 0.55nC @ VGS = 4.5V - Total gate charge required for full turn-on; used to size gate driver output current. |
| TJ range | −55°C to +150°C - Junction temperature operating window; enables use in automotive under-hood environments. |
| RθJA | 360°C/W - Thermal resistance from junction to ambient on standard PCB; dictates heatsinking requirements. |
Pinout & Package
Package: SOT363 - 6-pin surface-mount plastic package with dual MOSFET die in single outline; 0.006g weight, UL 94V-0 flammability rating, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Q1 | Low-side return path for first MOSFET; tied to ground or common source node in half-bridge. |
| G1 | Gate of Q1 | Control terminal for first channel; requires ≥0.8V to initiate conduction, fully enhanced at ≥4.5V. |
| D1 | Drain of Q1 | High-side switching node for Q1; connects to load or inductor in buck converter top switch position. |
| S2 | Source of Q2 | Independent source terminal for second MOSFET; allows separate grounding or floating configuration. |
| G2 | Gate of Q2 | Independent gate input for second channel; enables asynchronous or complementary drive schemes. |
| D2 | Drain of Q2 | Second high-side switching node; supports dual-output regulation or independent load switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 3.0Ω - Enables efficient 3.3V/5V logic-level drive without external level-shifting circuitry. |
| ESD protection | 2kV HBM - Integrated gate oxide protection eliminates need for external TVS in low-energy interfaces. |
| AEC-Q101 qualified | Automotive-grade reliability - Validated for temperature cycling, humidity bias, and mechanical shock per AEC stress test standards. |
| Green packaging | Halogen- and antimony-free, RoHS-compliant - Meets IEC 61249-2-21 and JEDEC J-STD-020 requirements for eco-friendly manufacturing. |
| Fast switching | tD(off) = 18.2ns - Reduces transition losses in >500kHz DC-DC converters, improving overall efficiency. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Bidirectional 12V brushed DC motor drive in automotive HVAC actuators. IC Role / Device Role / Timing Role: Dual N-channel switch implementing H-bridge low-side drivers with independent gate control. Use Value: Matched RDS(ON) ensures balanced current sharing; 150°C TJ rating supports under-dash mounting near heat sources. |
Use Scenario: Synchronous buck regulator for FPGA core voltage (1.2V @ 1A) in industrial PLC modules. IC Role / Device Role / Timing Role: Dual-channel high-efficiency power switch replacing discrete MOSFET pairs in compact 2-layer PCB layouts. Use Value: 48pF Ciss and 0.55nC Qg enable clean 1MHz switching with minimal gate drive loss and reduced EMI. |
| LED Backlighting | Power Management Functions |
Use Scenario: Dual-string white LED driver for automotive instrument cluster displays. IC Role / Device Role / Timing Role: Constant-current sink switch controlling two independent LED strings via PWM dimming. Use Value: Low 3.0Ω RDS(ON) minimizes voltage drop across current-sense resistors, preserving headroom for 3.3V supply rails. |
Use Scenario: Load switch for USB peripheral power sequencing in portable medical monitors. IC Role / Device Role / Timing Role: Dual independent enable-controlled power path with fast turn-off (<20ns) for fault isolation. Use Value: 2kV ESD protection prevents latch-up during hot-plug events; AEC-Q101 qualification ensures field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(ON) (4.5Ω @ 4.5V), lower ID (170mA), same SOT363 package | Reduced current capability limits use in >200mA loads; better suited for signal switching than power switching | Select when lower gate charge (0.35nC) and tighter VGS(th) tolerance (0.5–1.2V) are prioritized over conduction loss |
| NTJD4152PZ-1 | Lower V(BR)DSS (20V), higher RDS(ON) (5.5Ω @ 4.5V), different pinout (G1/D1/S1/S2/G2/D2) | Not suitable for 24V systems; incompatible pin mapping requires PCB redesign | Choose only for cost-sensitive 3.3V/5V logic-level applications where 20V rating is sufficient and layout flexibility exists |
Compared with DMN33D8LDW-13, DMN3026LSD-13 trades conduction efficiency for faster switching and tighter threshold control, while NTJD4152PZ-1 sacrifices voltage rating and pin compatibility for lower unit cost in non-automotive consumer designs.
Availability
DMN33D8LDW-13 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and LED backlighting applications requiring stable component supply, AEC-Q101 compliance, and compact dual-MOSFET integration.
Supply support for DMN33D8LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive and industrial power management systems demanding high reliability, low RDS(ON), and robust ESD immunity in miniature packages.
FAQ
What is the maximum gate-source voltage rating for DMN33D8LDW-13?
The absolute maximum gate-source voltage (VGSS) is ±20V, as specified in the Absolute Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to ≤12V in standard applications, with transient spikes clamped using Zener diodes if necessary.
Can DMN33D8LDW-13 be used in a synchronous rectifier configuration?
No - DMN33D8LDW-13 lacks the ultra-low RDS(ON) (<50mΩ), low Qrr, and optimized body diode recovery required for synchronous rectification. Its 3.0Ω RDS(ON) and 1.2V VSD make it unsuitable for secondary-side switching in flyback or LLC topologies where conduction loss dominates.
Is the SOT363 package lead-free and RoHS compliant?
Yes - DMN33D8LDW-13 uses matte tin annealed over Alloy42 leadframe and meets EU Directive 2011/65/EU (RoHS 2) with no purposely added lead. It is also halogen- and antimony-free per Diodes' "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb).
How does thermal performance change when mounted on 2-layer vs. 4-layer PCB?
On a standard 1"×1" 2-layer FR-4 board with 2oz copper, RθJA is 360°C/W. With 4-layer boards featuring internal ground/power planes and thermal vias, RθJA improves to ~220°C/W, allowing 55% higher continuous current before reaching 150°C junction temperature.
DMN33D8LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 250mA
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48pF @ 5V
- Power - Max:
- 350mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN33D8LDW-13 FAQ
1.How can I place an order for DMN33D8LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN33D8LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN33D8LDW-13 reliable?
The price and inventory of DMN33D8LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D8LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN33D8LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D8LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN33D8LDW-13?
DMN33D8LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN33D8LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN33D8LDW-13?
For technical support, including DMN33D8LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D8LDW-13 requirements.
6.How does Aetrix verify that DMN33D8LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN33D8LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D8LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN33D8LDW-13?
All DMN33D8LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D8LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN33D8LDW-13 part is unused and in its original packaging.
Return procedure for DMN33D8LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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