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Diodes Incorporated DMN33D8LDW-7
- Part No.:
- DMN33D8LDW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN33D8LDW-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.25A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:18,995
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Product details
Overview
DMN33D8LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V V(BR)DSS, 3Ω RDS(ON) @ 4.5V VGS (250mA ID), and qualified to AEC-Q101 for automotive reliability. It integrates two matched low-RDS(ON) switches optimized for compact DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMN33D8LDW-7 datasheet, DMN33D8LDW-7 pinout, DMN33D8LDW-7 application, or DMN33D8LDW-7 equivalent, this device offers verified gate-threshold stability (0.8–1.5V), ESD-protected gate (2kV HBM), and thermally characterized junction-to-ambient resistance (360°C/W) - critical for thermal-aware power stage design in space-constrained embedded systems.
Technical Context
This dual MOSFET uses planar silicon process with fully isolated die in a single SOT363 package. Each channel features independent gate control, identical threshold voltage distribution (0.8–1.5V), and matched on-resistance curves across temperature (±15% variation from −55°C to 150°C).
It supports fast switching with 2.9ns turn-on delay and 18.2ns turn-off delay under 10V drive, while maintaining low input capacitance (48pF Ciss) and minimal reverse transfer capacitance (8pF Crss) - enabling stable operation in high-frequency PWM regulators up to 2MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30V - maximum blocking voltage before avalanche conduction; sets upper limit for input rail in 24V industrial or 12V automotive DC-DC stages |
| RDS(ON) max | 3Ω @ VGS = 4.5V, ID = 250mA - defines conduction loss at typical logic-level gate drive; enables >90% efficiency in sub-500mW load applications |
| ID max (TA=25°C) | 250mA continuous - usable current per channel without derating; sufficient for driving small solenoids or LED strings up to 20mA × 12 channels |
| Ciss | 48pF - total input capacitance; determines gate drive strength requirement and switching loss at 1MHz+ frequencies |
| Qg (VGS=4.5V) | 0.55nC - total gate charge at 4.5V; enables low-power MCU GPIO direct drive without external buffer in low-duty-cycle applications |
| TJ range | −55°C to +150°C - extended operating junction temperature; validated for under-hood automotive modules and industrial motor controllers |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronics including HTOL, TC, and ESD; suitable for non-safety-critical vehicle subsystems |
Pinout & Package
Package: SOT363 - surface-mount, 6-pin plastic package with 0.65mm pitch, 2.1mm × 1.3mm footprint, and 0.9mm height; UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; internally connected to exposed pad in some variants but not here - requires PCB copper pour for thermal relief |
| G1 | Gate of Channel 1 | Control terminal for Q1; ESD-protected (2kV HBM); driven by 1.8–10V logic; threshold centered at 1.1V |
| D1 | Drain of Channel 1 | High-side switching node for Q1; rated for 30V repetitive blocking; shares no internal connection with D2 |
| S2 | Source of Channel 2 | Independent source terminal for second MOSFET; electrically isolated from S1 - allows dual low-side or high-side + low-side configurations |
| G2 | Gate of Channel 2 | Separate control input for Q2; matched VGS(th) and RDS(ON) to Q1; enables synchronous or complementary drive |
| D2 | Drain of Channel 2 | Second high-side switch node; identical voltage/current rating to D1; no internal coupling to D1 or other pins |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 3Ω max per channel - reduces I²R losses in battery-powered devices where 3.3V/5V logic drives the gate directly |
| ESD-protected gate | 2kV HBM rating - eliminates need for external gate protection diodes in handheld or portable equipment assembly |
| Fast switching speed | 2.9ns tD(on), 13.6ns tf - supports high-frequency DC-DC topologies (e.g., buck converters >1MHz) with minimal dead-time penalty |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and bias life testing - enables use in infotainment power rails and body control modules |
| Green packaging | Halogen- and antimony-free, RoHS-compliant molding compound - satisfies IPC-1752A reporting and EU environmental compliance requirements |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Driving small brushed DC motors in automotive HVAC actuators or robotic end-effectors requiring bidirectional control via H-bridge configuration. IC Role / Device Role / Timing Role: Dual low-side switch in half-bridge topology; each channel controls one leg of the H-bridge with independent PWM timing. Use Value: Matched RDS(ON) and gate thresholds ensure balanced current sharing and prevent shoot-through during commutation transitions. |
Use Scenario: Synchronous rectification in 5V-input, 3.3V-output buck converters for FPGA I/O banks or microcontroller core supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous switch replacing Schottky diode; driven complementary to high-side FET with precise dead-time control. Use Value: 3Ω RDS(ON) at 4.5V reduces conduction loss by 65% vs. 0.4V-drop Schottky, improving light-load efficiency by ≥8% at 100mA output. |
| LED Backlighting | Power Management Functions |
Use Scenario: Individual current regulation for RGB LED strings in automotive instrument cluster displays or smart lighting panels. IC Role / Device Role / Timing Role: Constant-current sink switch controlling LED anode voltage via PWM dimming at 1–20kHz. Use Value: Low 2.4Ω RDS(ON) at 10V ensures <50mW dissipation per channel at 200mA, eliminating need for heatsinking in tight display bezels. |
Use Scenario: Load switching for peripheral rails (USB, sensors, RF modules) in battery-backed IoT edge nodes requiring zero-quiescent-current shutdown. IC Role / Device Role / Timing Role: High-side or low-side power gate controlled by system MCU GPIO; supports fast enable/disable sequencing. Use Value: 0.55nC Qg enables full turn-on within 100ns using standard 20mA GPIO, minimizing wake-up latency and leakage during sleep states. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single-channel, 30V, 2.8Ω @ 4.5V, SOT23-6 package; lacks second MOSFET and has higher RθJA (420°C/W) | Requires two devices for dual-switch function; larger board area; unsuitable for space-constrained dual-drive layouts | Select when only one switch is needed per footprint or when legacy SOT23-6 layout reuse is mandatory |
| NTJD4152PZ-1 | Dual N-channel, 20V V(BR)DSS, 2.5Ω @ 4.5V, SOT363; lower voltage rating but lower RDS(ON) and 1.2nC Qg | Not suitable for 24V input rails; higher gate charge increases drive loss above 500kHz switching | Prefer for 3.3V/5V-only systems where 20V rating suffices and lowest possible conduction loss is prioritized |
Compared with DMN33D8LDW-7, DMN3026LSD-13 doubles PCB area and thermal resistance for dual functionality, while NTJD4152PZ-1 trades 10V blocking headroom for marginally better RDS(ON) - making DMN33D8LDW-7 the optimal balance of voltage margin, thermal performance, and dual integration in automotive-qualified SOT363 form factor.
Availability
DMN33D8LDW-7 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and LED backlighting requiring stable component supply across automotive Tier-2 production, industrial sensor modules, and consumer portable electronics.
Supply support for DMN33D8LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with focus on power management, signal integrity, and connectivity solutions for industrial, automotive, and computing markets.
DMN33D8LDW-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for high-reliability, low-voltage power switching in space-constrained environments where thermal efficiency and gate-drive simplicity are critical.
FAQ
Is DMN33D8LDW-7 suitable for high-side switching configurations?
Yes - each channel operates independently with isolated source, drain, and gate terminals. When used in high-side configuration, the source connects to the positive rail and the load connects between drain and ground. Gate drive must exceed VS by ≥1.5V to ensure full enhancement, and a charge pump or level-shifting driver is recommended for 100% duty cycle operation.
What is the maximum safe operating frequency for DMN33D8LDW-7 in PWM applications?
Based on measured 2.9ns tD(on) and 13.6ns tf, the device supports clean switching up to 2MHz in buck converters with proper gate drive strength (≤10Ω series resistance) and layout-controlled parasitics. Above 1.5MHz, gate charge (0.55nC) and Crss (8pF) become dominant loss factors, requiring careful PCB routing and driver selection.
Does DMN33D8LDW-7 include integrated body diodes, and what are their forward characteristics?
Yes - each channel includes a monolithic body diode with typical VSD of 1.2V at 115mA. The diode is rated for 0.5A continuous forward current and exhibits soft recovery behavior, making it suitable for freewheeling in inductive loads like solenoids or small motors without external snubbers.
How does the AEC-Q101 qualification impact PCB layout and thermal design?
AEC-Q101 qualification confirms robustness against thermal cycling (−40°C to +125°C), but does not alter thermal limits: RθJA remains 360°C/W on 1"×1" FR-4 with 2oz copper. Layout must maintain ≥0.3mm solder mask defined for SOT363 pads and avoid thermal vias under the package center - which contains no thermal pad - to prevent solder voiding and mechanical stress.
DMN33D8LDW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 250mA
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48pF @ 5V
- Power - Max:
- 350mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN33D8LDW-7 FAQ
1.How can I place an order for DMN33D8LDW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN33D8LDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN33D8LDW-7 reliable?
The price and inventory of DMN33D8LDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D8LDW-7 is usually 5 days.
3.What payment methods are accepted for DMN33D8LDW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D8LDW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN33D8LDW-7?
DMN33D8LDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN33D8LDW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN33D8LDW-7?
For technical support, including DMN33D8LDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D8LDW-7 requirements.
6.How does Aetrix verify that DMN33D8LDW-7 is sourced from the original manufacturer or authorized distributors?
All DMN33D8LDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D8LDW-7 meets industry standards.
7.What is the process for return or replacement of DMN33D8LDW-7?
All DMN33D8LDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D8LDW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN33D8LDW-7 part is unused and in its original packaging.
Return procedure for DMN33D8LDW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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