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Diodes Incorporated DMN33D8LDWQ-7
- Part No.:
- DMN33D8LDWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN33D8LDWQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.25A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
DMN33D8LDWQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, 3Ω RDS(ON) @ 4.5VGS, 250mA ID, and qualified to AEC-Q101 for automotive motor control and DC-DC converter applications.
For engineers reviewing the DMN33D8LDWQ-7 datasheet, DMN33D8LDWQ-7 pinout, DMN33D8LDWQ-7 application, or DMN33D8LDWQ-7 equivalent, key selection criteria include low-voltage gate drive compatibility (2.5V–4.5V), dual-channel integration in 3mm² footprint, AEC-Q101 qualification, and body diode conduction capability up to 0.5A.
Technical Context
This dual MOSFET integrates two matched N-channel devices with independent gate, source, and drain terminals-enabling synchronous rectification, half-bridge topologies, or redundant load switching. Each channel supports 30V blocking, sub-3Ω on-resistance at 4.5VGS, and operates across –55°C to +150°C junction temperature.
Its low input capacitance (Ciss = 48pF) and fast switching (tD(ON) = 2.9ns, tF = 13.6ns) reduce gate drive losses and enable high-frequency operation in compact power stages. The device features ESD protection and is fully RoHS-compliant with halogen/antimony-free "Green" molding compound.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source voltage before avalanche breakdown; enables use in 24V automotive systems with margin. |
| RDS(ON) | 3Ω @ VGS = 4.5V - Low conduction loss at standard logic-level gate drive; reduces I²R heating in 250mA continuous loads. |
| ID (max) | 250mA @ TA = 25°C - Continuous current rating per channel; derates to 200mA at 70°C ambient. |
| Ciss | 48pF - Input capacitance determines gate charge requirement and switching speed; enables efficient drive from low-power controllers. |
| Qg | 0.55nC @ VGS = 4.5V - Total gate charge per channel; defines minimum gate driver strength needed for <10ns turn-on. |
| TJ range | –55°C to +150°C - Full automotive temperature range support; validated for under-hood and infotainment subsystems. |
| VGS(TH) | 0.8–1.5V - Gate threshold voltage ensures reliable turn-on with 1.8V–3.3V microcontroller outputs. |
Pinout & Package
SOT363 is a 6-pin, surface-mount, dual-transistor package measuring 2.15mm × 2.10mm × 0.95mm, with matte tin–annealed terminals solderable per MIL-STD-202 Method 208 and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Common return path for first MOSFET; internally connected to Pin 4 (S2) in some variants but isolated here per datasheet schematic. |
| 2 (G1) | Gate of Channel 1 | Control terminal for first MOSFET; requires ≤±20V drive; threshold starts at 0.8V. |
| 3 (D1) | Drain of Channel 1 | High-side switching node for Channel 1; rated for 30V blocking and 0.5A body diode conduction. |
| 4 (S2) | Source of Channel 2 | Independent source for second MOSFET; electrically isolated from S1 per internal schematic. |
| 5 (G2) | Gate of Channel 2 | Independent control input for second MOSFET; identical electrical characteristics to G1. |
| 6 (D2) | Drain of Channel 2 | Second high-side switching node; supports synchronous rectification or dual-load isolation. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two independent, matched MOSFETs in one SOT363 package-reduces PCB area by >40% vs. discrete solutions. |
| Low RDS(ON) at 2.5VGS | 7Ω @ VGS = 2.5V enables direct drive from 2.5V/3.3V MCUs without level-shifting circuitry. |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and ESD testing-supports PPAP documentation. |
| ESD protection | HBM rating ≥2kV per JESD22-A114-eliminates need for external TVS in low-energy gate-drive paths. |
| Green packaging | Halogen- and antimony-free compound (<900ppm Br+Cl, <1000ppm Sb) meets global environmental compliance mandates. |
Applications
| Automotive Motor Control | LED Backlight Dimming |
|---|---|
Use Scenario: Driving small brushed DC motors in HVAC actuators or mirror positioners in 12V vehicle systems. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling direction and PWM duty cycle via independent gate signals. Use Value: 3Ω RDS(ON) minimizes heat generation at 250mA stall current; AEC-Q101 ensures reliability over 15-year vehicle lifetime. | Use Scenario: Current regulation for multi-segment LCD backlight arrays in instrument clusters or center displays. IC Role / Device Role / Timing Role: Synchronous PWM-controlled current sink per LED string, leveraging fast 13.6ns fall time for precise dimming resolution. Use Value: Low Ciss (48pF) and Qg (0.55nC) reduce gate driver power consumption and enable >10kHz dimming without audible noise. |
| DC-DC Converter Synchronous Rectification | Redundant Power Path Switching |
Use Scenario: Replacing Schottky diodes in 5V–12V buck converters for ADAS camera modules or telematics ECUs. IC Role / Device Role / Timing Role: Dual N-MOSFET used as synchronous rectifier pair (high-side + low-side) in non-isolated buck topology. Use Value: 30V VDSS and 0.5A body diode rating support 12V input with margin; 2.4Ω RDS(ON) @ 10VGS cuts conduction loss by >60% vs. 0.4V Schottky. | Use Scenario: Fault-tolerant power routing in domain controllers where dual supplies feed critical CAN/FlexRay interfaces. IC Role / Device Role / Timing Role: Independent channel switching enables hot-swap isolation and automatic failover between primary and backup rails. Use Value: Matched RDS(ON) and VGS(TH) ensure balanced current sharing; SOT363 thermal resistance (360°C/W) allows 0.22W dissipation at 70°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSDWQ-7 | 30V VDSS, 2.2Ω RDS(ON) @ 4.5VGS, same SOT363 package, but higher 350mA ID rating. | Better suited for higher-current motor drivers (>250mA) where lower conduction loss is prioritized over cost. | Select when thermal budget is constrained and peak load exceeds 250mA per channel. |
| DMN3029LSDWQ-7 | 30V VDSS, 4.5Ω RDS(ON) @ 4.5VGS, same footprint and AEC-Q101 qualification, but optimized for ultra-low leakage (IDSS < 100nA). | Preferred in always-on battery monitoring circuits where standby current must be minimized. | Choose for low-quiescent-power applications requiring <100nA off-state drain leakage. |
Compared with DMN33D8LDWQ-7, DMN3026LSDWQ-7 delivers lower on-resistance for improved efficiency at higher loads, while DMN3029LSDWQ-7 trades RDS(ON) for superior off-state leakage control-making each optimal for distinct automotive subsystem priorities.
Availability
DMN33D8LDWQ-7 is available at Aetrix Electronics and suitable for automotive motor control, LED backlight dimming, and DC-DC converter synchronous rectification requiring stable component supply and AEC-Q101 traceability.
Supply support for DMN33D8LDWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets since 1964.
The DMN33D8LDWQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding vehicle subsystems requiring robust gate drive compatibility and long-term supply stability.
FAQ
What is the maximum continuous drain current per channel at 100°C ambient?
At TA = 100°C, the DMN33D8LDWQ-7's continuous drain current is derated to approximately 120mA per channel, based on its thermal resistance (RθJA = 360°C/W) and maximum junction temperature (TJ = 150°C). This assumes mounting on a 1" × 1" FR-4 board with 2oz copper.
Is the body diode in each channel rated for continuous conduction?
Yes-the maximum continuous body diode forward current (IS) is specified as 0.5A per channel at TA = 25°C. This rating applies to reverse recovery during synchronous rectification or freewheeling in inductive loads, with VSD ≤ 1.2V at 115mA.
Can DMN33D8LDWQ-7 be used with 1.8V GPIOs from modern microcontrollers?
Yes-its gate threshold voltage (VGS(TH)) ranges from 0.8V to 1.5V, ensuring reliable turn-on with 1.8V logic outputs. However, RDS(ON) rises to 7Ω at VGS = 2.5V, so full 250mA capability requires ≥4.5V gate drive.
Does this part support bidirectional current flow in each channel?
No-each channel operates unidirectionally as a standard N-channel MOSFET: current flows from drain to source when the gate is biased above threshold. Bidirectional switching would require external circuitry or back-to-back configuration, not inherent to the device.
DMN33D8LDWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 250mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48pF @ 5V
- Power - Max:
- 350mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN33D8LDWQ-7 FAQ
1.How can I place an order for DMN33D8LDWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN33D8LDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN33D8LDWQ-7 reliable?
The price and inventory of DMN33D8LDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D8LDWQ-7 is usually 5 days.
3.What payment methods are accepted for DMN33D8LDWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D8LDWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN33D8LDWQ-7?
DMN33D8LDWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN33D8LDWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN33D8LDWQ-7?
For technical support, including DMN33D8LDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D8LDWQ-7 requirements.
6.How does Aetrix verify that DMN33D8LDWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN33D8LDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D8LDWQ-7 meets industry standards.
7.What is the process for return or replacement of DMN33D8LDWQ-7?
All DMN33D8LDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D8LDWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN33D8LDWQ-7 part is unused and in its original packaging.
Return procedure for DMN33D8LDWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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