Diodes Incorporated DMN33D8LT-7

Overview

DMN33D8LT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 30V V_DSS, 5Ω R_DS(ON) @ V_GS = 4V, and 115mA continuous drain current at +25°C. It features low input capacitance (48pF C_iss), fast switching (t_D(ON) = 2.9ns), and 2kV ESD-protected gate - deployed in battery-operated DC-DC converters and solid-state relay drivers.

For engineers reviewing the DMN33D8LT-7 datasheet, DMN33D8LT-7 pinout, DMN33D8LT-7 application, or DMN33D8LT-7 equivalent, key selection criteria include its low-threshold gate (V_GS(TH) = 0.8–1.5V), thermal resistance (R_θJA = 521°C/W on FR-4), and suitability for space-constrained power switches requiring <240mW dissipation.

Technical Context

This MOSFET operates in enhancement mode with a single N-channel structure optimized for low-voltage logic-level drive. Its gate threshold voltage range (0.8–1.5V) enables direct interface with 1.8V/2.5V/3.3V microcontrollers, while its normalized R_DS(ON) variation remains stable across –55°C to +150°C junction temperature.

Designed for high-efficiency power management, it delivers fast turn-on (2.9ns delay) and turn-off (18.2ns delay) with minimal gate charge (Q_g = 0.55nC @ V_GS = 4.5V), reducing switching losses in PWM-controlled loads like solenoids and LED drivers.

Key Specifications

Pinout & Package

SOT523 is a miniature surface-mount plastic package (1.60 × 1.60 × 0.75 mm) with gull-wing leads, optimized for high-density PCB layouts and automated assembly. It features matte tin-plated alloy 42 leadframe, UL 94V-0 molding compound, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004LK-7 and AO3400A, DMN33D8LT-7 uniquely balances 30V robustness, 2.5V logic compatibility, and ultra-small SOT523 size - making it optimal for space-limited, battery-sensitive designs where gate protection and thermal efficiency are prioritized over raw current capacity.

Availability

DMN33D8LT-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery-powered load switches, and solid-state relay drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DMN33D8LT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

DMN33D8LT-7 belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for ultra-compact, low-power switching in portable and energy-sensitive applications - emphasizing gate drive simplicity, thermal efficiency, and green compliance.

FAQ

What is the maximum safe operating voltage for DMN33D8LT-7?

The absolute maximum drain-source voltage (V_DSS) is 30V DC. Exceeding this value risks avalanche breakdown and permanent device failure. For reliable operation, design margins should limit steady-state V_DS to ≤24V, especially under transient conditions or elevated temperatures where R_DS(ON) increases.

Can DMN33D8LT-7 be driven directly from a 1.8V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(TH)) ranges from 0.8V to 1.5V, and R_DS(ON) is specified down to 7Ω at V_GS = 2.5V. At 1.8V, the device will partially enhance, delivering ~60–80mA continuous current with acceptable on-resistance for signal-level switching, though full 115mA performance requires ≥2.5V drive.

Is thermal derating required when operating above +25°C ambient?

Yes - the 240mW power dissipation rating applies only at T_A = +25°C on a standard FR-4 board. With R_θJA = 521°C/W, each 1°C rise in ambient reduces allowable power by ~0.46mW. At +60°C ambient, maximum continuous power drops to ~78mW, limiting practical I_D to ~40mA for sustained operation without heatsinking.

Does DMN33D8LT-7 include intrinsic body diode functionality?

Yes - it contains an integrated source-drain body diode with forward voltage (V_SD) ≤1.2V at 115mA. This diode conducts during inductive flyback events (e.g., solenoid de-energization) but is not rated for reverse recovery; use external flyback diodes for high-energy inductive loads or high-frequency switching.