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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN33D8LTQ-7

Name: DMN33D8LTQ-7
Brand: Diodes Incorporated
SKU: DMN33D8LTQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN33D8LTQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-523

Datasheet:: DMN33D8LTQ-7.pdf

Description:: MOSFET N-CH 30V 115MA SOT523

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Product details

Overview

DMN33D8LTQ-7 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in SOT523 package, rated for 30V V_DSS, 5Ω R_DS(ON) @ V_GS = 4V, and 115mA continuous drain current at +25°C. It features 2kV ESD-protected gate, low input capacitance (48pF C_iss), and fast switching (t_D(ON) = 2.9ns), targeting automotive load switching and DC-DC converter control.

For engineers reviewing the DMN33D8LTQ-7 datasheet, DMN33D8LTQ-7 pinout, DMN33D8LTQ-7 application, or DMN33D8LTQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, 30V breakdown voltage, 5Ω on-resistance at 4V gate drive, thermal resistance of 521°C/W on FR-4, and SOT523 footprint compatibility with space-constrained automotive modules.

Technical Context

This MOSFET operates as a low-voltage, low-current single-N-channel switch optimized for automotive-grade reliability. Its gate threshold voltage (0.8–1.5V) enables direct interface with 3.3V/5V logic, while the integrated body diode (V_SD ≤ 1.2V @ 115mA) supports freewheeling in inductive loads like BLDC motor phases.

The device's dynamic parameters-C_iss = 48pF, Q_g = 0.55nC @ V_GS = 4.5V, and t_F = 13.6ns-support efficient high-frequency switching up to several hundred kHz in compact DC-DC regulators, with minimal gate drive power demand due to low total gate charge.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum drain-source blocking voltage; suitable for 24V automotive systems with margin.
R_DS(ON)	5Ω @ V_GS = 4V - Low conduction loss at standard logic-level gate drive; enables <100mW I²R loss at 100mA.
I_D (cont)	115mA @ T_A = +25°C - Continuous current rating under standard PCB layout; derates to zero at +150°C junction.
C_iss	48pF @ V_DS = 5V - Low input capacitance reduces gate drive energy and speeds turn-on response.
Q_g	0.55nC @ V_GS = 4.5V - Minimal gate charge enables efficient driving from microcontroller GPIOs without external buffers.
T_J Range	−55°C to +150°C - Full automotive temperature range support; qualified per AEC-Q101 stress test requirements.
ESD Rating	2kV HBM - Integrated gate protection eliminates need for external ESD clamps in board-level design.

Pinout & Package

SOT523 is a miniature surface-mount plastic package (1.60 × 1.60 × 0.75 mm) with three terminals, designed for high-density automotive PCB layouts and reflow-compatible assembly. Its low thermal resistance (521°C/W on FR-4) requires adherence to recommended pad dimensions (X = 0.40 mm, Y1 = 1.80 mm) for optimal power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts logic-level voltage (0.8–1.5V V_GS(th)) to enable channel; protected by 2kV HBM ESD structure.
Source (S)	Reference node / return path	Common connection for load return; tied to ground or low-side reference; hosts body diode anode.
Drain (D)	Power output terminal	Switches 30V loads up to 115mA; connects to motor phase, DC-DC switch node, or load supply rail.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use with PPAP documentation and IATF 16949 manufacturing; supports functional safety-aware designs.
Low R_DS(ON) at 4V drive	5Ω enables efficient operation directly from 3.3V/5V MCU outputs-no level-shifting required for basic on/off control.
Fast switching with low Q_g	0.55nC total gate charge and 13.6ns fall time reduce switching losses in DC-DC converters operating >100kHz.
SOT523 footprint	1.6×1.6mm outline saves >60% board area vs. SOT23; compatible with automated pick-and-place and reflow processes.

Applications

Brushless DC Motor Control

DC-DC Converter

Use Scenario: Low-side commutation switch in 3-phase BLDC driver IC auxiliary stages or discrete gate driver feedback paths.

IC Role / Device Role: N-channel load switch controlling phase current return path during PWM cycles.

Use Value: 5Ω R_DS(ON) limits conduction loss to <50mW at 100mA, reducing thermal load in compact motor modules.

Use Scenario: Synchronous rectifier or high-side switch in buck/boost regulator for infotainment power rails.

IC Role / Device Role: Power switch managing energy transfer between inductor and output capacitor.

Use Value: 48pF C_iss and 0.55nC Q_g minimize switching loss and gate drive burden at 500kHz operation.

Automotive Load Switch

LED Driver Circuit

Use Scenario: Controlled power delivery to sensors, actuators, or communication modules in body control units.

IC Role / Device Role: High-reliability discrete switch replacing mechanical relays or higher-power FETs where current ≤115mA.

Use Value: AEC-Q101 qualification and −55°C to +150°C operation ensure uninterrupted function across vehicle life cycle.

Use Scenario: Constant-current sink for status LEDs or backlight segments in instrument clusters.

IC Role / Device Role: Precision current-regulating switch with predictable V_GS(th) and low thermal drift.

Use Value: Gate threshold stability (±0.2V over −55°C to +125°C) maintains consistent LED brightness across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LFG-7	30V V_DSS, 2.8Ω R_DS(ON) @ 4.5V, SOT323 package (larger than SOT523)	Higher current capability (220mA), but larger footprint and no AEC-Q101 rating	Select when higher I_D and lower R_DS(ON) outweigh space and automotive compliance needs.
NTNS3123PZT5G	30V V_DSS, 4.5Ω R_DS(ON) @ 4.5V, SOT523 package, AEC-Q101 qualified	Lower gate threshold (0.5–1.2V), slightly better R_DS(ON), same package and qualification	Preferred for ultra-low-voltage logic drive or tighter R_DS(ON) tolerance in safety-critical nodes.

Compared with DMN33D8LTQ-7, DMN3026LFG-7 offers higher current and lower on-resistance but lacks automotive qualification and uses a larger package, while NTNS3123PZT5G matches the SOT523 footprint and AEC-Q101 status with improved gate threshold consistency and marginally lower R_DS(ON).

Availability

DMN33D8LTQ-7 is available at Aetrix Electronics and suitable for brushless DC motor control, automotive load switching, and DC-DC converter applications requiring stable component supply, AEC-Q101 compliance, and SOT523 footprint compatibility.

Supply support for DMN33D8LTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

The DMN33D8LTQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive subsystems such as body electronics and power management.

FAQ

Is DMN33D8LTQ-7 suitable for 3.3V microcontroller gate drive?

Yes. With a gate threshold voltage range of 0.8–1.5V and guaranteed turn-on at V_GS = 2.5V (R_DS(ON) = 7Ω), the DMN33D8LTQ-7 fully enhances using standard 3.3V GPIO outputs. Its 2kV ESD protection further ensures robustness against logic-level interface transients.

What is the maximum ambient temperature for continuous 115mA operation?

At 115mA continuous drain current, the DMN33D8LTQ-7 must be operated within an ambient temperature limit of +25°C on a standard FR-4 board (2oz copper, minimum pad layout), based on its 521°C/W θ_JA and 240mW power dissipation rating. Derating is required above this temperature.

Does DMN33D8LTQ-7 include a body diode, and what is its forward voltage?

Yes, it integrates an intrinsic body diode with a maximum forward voltage of 1.2V at 115mA source current and V_GS = 0V. This diode supports freewheeling current in inductive loads and is characterized across the full −55°C to +150°C junction temperature range.

Can DMN33D8LTQ-7 replace older SOT23 MOSFETs in existing designs?

No-its SOT523 package (1.6×1.6mm) is physically smaller than SOT23 (2.9×1.3mm) and not pin-compatible. Layout redesign is required. However, its electrical specs (30V, 5Ω @ 4V) make it a viable upgrade path where board space reduction and AEC-Q101 compliance are priorities.

DMN33D8LTQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id:: 1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 0.55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 48 pF @ 5 V

FET Feature:: -

Power Dissipation (Max):: 240mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-523

DMN33D8LTQ-7 FAQ

1.How can I place an order for DMN33D8LTQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN33D8LTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN33D8LTQ-7 reliable?

The price and inventory of DMN33D8LTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D8LTQ-7 is usually 5 days.

3.What payment methods are accepted for DMN33D8LTQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D8LTQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN33D8LTQ-7?

DMN33D8LTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN33D8LTQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN33D8LTQ-7?

For technical support, including DMN33D8LTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D8LTQ-7 requirements.

6.How does Aetrix verify that DMN33D8LTQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN33D8LTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D8LTQ-7 meets industry standards.

7.What is the process for return or replacement of DMN33D8LTQ-7?

All DMN33D8LTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D8LTQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN33D8LTQ-7 part is unused and in its original packaging.

Return procedure for DMN33D8LTQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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