Diodes Incorporated DMN33D8LV-7

Overview

DMN33D8LV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V V(BR)DSS, 3Ω RDS(ON) @ 4.5V VGS, and 350mA continuous drain current at +25°C. It integrates two independently controllable low-RDS(ON) switches optimized for compact DC-DC converters, LED backlighting drivers, and motor control stages in space-constrained portable electronics.

For engineers reviewing the DMN33D8LV-7 datasheet, DMN33D8LV-7 pinout, DMN33D8LV-7 application, or DMN33D8LV-7 equivalent, key selection criteria include its dual-channel layout in ultra-small SOT563, gate-threshold stability across -55°C to +150°C, ESD protection to 2kV HBM, and verified AEC-Q101 qualification for automotive-grade reliability in power management ICs.

Technical Context

This dual MOSFET implements two discrete N-channel silicon devices in a single 6-pin SOT563 package with isolated source terminals (S1/S2) and shared thermal pad. Each channel features a gate threshold voltage of 0.8–1.5V and supports logic-level drive down to 2.5V VGS while maintaining ≤7Ω RDS(ON).

Its dynamic performance includes 48pF input capacitance (Ciss), 0.55nC total gate charge at 4.5V, and sub-20ns turn-off delay - enabling high-frequency switching (>1MHz) in synchronous buck regulators and PWM-controlled load switches without excessive gate drive loss.

Key Specifications

Pinout & Package

Package: SOT563 - 6-pin, ultra-thin surface-mount package with exposed thermal pad (no internal thermal slug connection); dimensions 1.6mm × 1.2mm × 0.6mm (L×W×H), moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN33D8LV-7, DMN3026LSD-13 offers higher per-channel current but doubles component count and board area, while AOB410L provides superior thermal handling at the cost of 3× footprint and slower switching due to higher capacitance - making DMN33D8LV-7 optimal for miniaturized, high-frequency power management where dual-channel integration and logic-level drive are critical.

Availability

DMN33D8LV-7 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and LED backlighting applications requiring stable component supply, AEC-Q101 compliance, and ultra-small SOT563 packaging.

Supply support for DMN33D8LV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing facilities in China, Taiwan, and the U.S.

This device belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power conversion in portable, automotive, and industrial electronics - emphasizing low gate charge, logic-level compatibility, and AEC-Q101 reliability.

FAQ

What is the maximum operating junction temperature for DMN33D8LV-7?

The DMN33D8LV-7 has a specified operating junction temperature range of -55°C to +150°C. Its thermal resistance (RθJA) is 288°C/W on standard FR-4 with 2oz copper, meaning at 350mA ID and 3Ω RDS(ON), junction temperature rise is approximately 37°C above ambient - well within safe limits at room temperature.

Does DMN33D8LV-7 support 2.5V logic-level gate drive?

Yes - the gate threshold voltage (VGS(th)) is specified from 0.8V to 1.5V, and RDS(ON) is guaranteed at 7Ω with only 2.5V VGS. This enables direct interfacing with 2.5V and 3.3V microcontrollers without external level shifters, confirmed by Figure 3 and Table "ON CHARACTERISTICS" in DS36892 Rev. 2-2.

How is the SOT563 package thermally managed during PCB layout?

The SOT563 package uses a bottom-exposed thermal pad that must be soldered to a copper pour for effective heat dissipation. Diodes recommends using the AP02001 pad layout - minimum 1.0mm² copper area with ≥4 thermal vias (0.3mm diameter) connecting to inner ground planes to achieve the rated 288°C/W RθJA.

Is DMN33D8LV-7 suitable for automotive applications?

Yes - it is explicitly qualified to AEC-Q101 standards, including temperature cycling, high-temperature operating life, and ESD testing. Its -55°C to +150°C operating range, 2kV HBM ESD rating, and green halogen-free construction meet Tier-1 automotive requirements for body electronics, infotainment power supplies, and ADAS sensor modules.