Diodes Incorporated DMN33D8LVQ-13
- Part No.:
- DMN33D8LVQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN33D8LVQ-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.35A SOT563
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
DMN33D8LVQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 3Ω RDS(ON) @ 4.5V VGS, and 350mA continuous drain current at +25°C - designed for compact, high-efficiency power switching in space-constrained DC-DC converters and backlighting circuits.
For engineers reviewing the DMN33D8LVQ-13 datasheet, DMN33D8LVQ-13 pinout, DMN33D8LVQ-13 application, or DMN33D8LVQ-13 equivalent, key selection criteria include low gate charge (0.55nC @ 4.5V), AEC-Q101 qualification, dual-channel integration in 1.6mm × 1.6mm footprint, and guaranteed RDS(ON) performance down to 2.5V gate drive.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing a common source configuration per channel, enabling synchronous rectification or complementary half-bridge operation without external isolation. Its 0.55nC total gate charge and 2.6ns rise time support high-frequency switching up to 1MHz in buck regulators.
The device features ESD-protected gates (±10μA IGSS), operates across –55°C to +150°C junction temperature, and delivers stable RDS(ON) with <15% variation over temperature when biased at VGS = 4.5V and ID = 300mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V rail systems with 20% margin against transients |
| RDS(ON) @ 4.5V | 3.0Ω max - enables ≥85% efficiency in 3.3V-output buck converters at 200mA load |
| ID (continuous) | 350mA @ +25°C - sufficient for LED backlight strings of ≤5 LEDs in series |
| Qg @ 4.5V | 0.55nC - reduces gate drive power loss in battery-powered motor control ICs |
| Ciss | 48pF - minimizes Miller effect-induced shoot-through risk in high-side switching |
| TJ range | –55°C to +150°C - qualified for under-hood automotive modules per AEC-Q101 |
| PD @ +25°C | 0.43W - requires no heatsink on FR-4 with 2oz copper and minimum pad layout |
Pinout & Package
Package: SOT563 - 1.6mm × 1.6mm × 0.6mm ultra-thin molded plastic body, halogen/antimony-free, moisture sensitivity level 1 (J-STD-020), matte tin-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source 1 | Common return path for Channel 1; internally bonded to substrate ground plane |
| G1 | Gate 1 | Control input for first N-channel MOSFET; ESD-protected, threshold 0.8–1.5V |
| D1 | Drain 1 | Power output node for Channel 1; rated for 30V blocking and 0.8A pulsed current |
| S2 | Source 2 | Independent return for Channel 2; electrically isolated from S1 in dual-source variant |
| G2 | Gate 2 | Independent control for second N-channel MOSFET; identical threshold and drive requirements as G1 |
| D2 | Drain 2 | Second power output node; enables dual-load switching or phase-splitting in compact layouts |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel integration | Two matched N-MOSFETs in single SOT563 package reduce PCB area by 40% vs discrete solutions |
| Low RDS(ON) @ 2.5V | 7Ω max enables logic-level drive from 3.3V microcontrollers without level-shifting |
| Fast switching | 2.6ns rise / 13.6ns fall time allows >500kHz PWM operation with minimal dead-time loss |
| AEC-Q101 qualification | Validated for automotive power management including body control modules and HVAC actuators |
| ESD-protected gate | ±10μA leakage at ±16V ensures robustness during automated assembly and field handling |
Applications
| Motor Control | DC-DC Converter |
|---|---|
|
Use Scenario: Driving small brushed DC motors in automotive seat adjusters and mirror actuators. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and speed via PWM at 20–50kHz. Use Value: 350mA rating and 3Ω RDS(ON) limit conduction loss to <0.4W at full load, reducing thermal stress in sealed enclosures. |
Use Scenario: Synchronous rectification in 3.3V/500mA buck converter for infotainment SoC power rails. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to improve efficiency at light loads. Use Value: 0.55nC Qg and 48pF Ciss minimize gate drive loss and enable stable 1MHz operation with minimal EMI. |
| LED Backlighting | Power Management IC Interface |
|
Use Scenario: Current regulation for white LED strings in instrument cluster displays. IC Role / Device Role / Timing Role: Constant-current sink controlled by analog dimming voltage or PWM signal. Use Value: Matched dual channels allow parallel current paths for higher brightness while maintaining thermal balance. |
Use Scenario: Load switching for auxiliary rails (e.g., USB-C PD controller, CAN transceiver) in automotive domain controllers. IC Role / Device Role / Timing Role: Controlled power enable/disconnect with fast turn-off to prevent brown-out during fault recovery. Use Value: 18.2ns tD(off) ensures rapid shutdown (<20ns) critical for ASIL-B functional safety response timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | Higher RDS(ON) (4.5Ω @ 4.5V), larger SOT23-6 package, no AEC-Q101 qualification | Limited to industrial/commercial use; unsuitable for automotive PPAP programs | Select when cost is primary constraint and automotive qualification is unnecessary |
| AOB410L | Single-channel, TO-252 package, lower RDS(ON) (2.2mΩ), 30V rating, not dual | Requires two devices and extra PCB area; lacks integrated dual-channel timing matching | Choose only when higher current (>5A) capability is required and board space is not constrained |
Compared with DMN33D8LVQ-13, DMN3029LSD-13 trades automotive compliance and compactness for lower unit cost, while AOB410L provides superior conduction performance but eliminates the space-saving dual-channel advantage essential for multi-rail power sequencing.
Availability
DMN33D8LVQ-13 is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, and LED backlighting requiring stable component supply with automotive-grade traceability and lifecycle continuity.
Supply support for DMN33D8LVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN33D8LVQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, high-efficiency power switching in automotive body electronics and portable industrial equipment.
FAQ
Is DMN33D8LVQ-13 pin-compatible with standard SOT563 dual MOSFETs?
Yes - DMN33D8LVQ-13 uses the industry-standard SOT563 pinout (S1-G1-D1-S2-G2-D2) confirmed in Diodes' DS44888 Rev. 2-2, Figure "Top View Pin Out". No adapter or layout change is needed when replacing other SOT563 dual N-MOSFETs with identical terminal mapping.
What is the maximum allowable gate drive voltage for reliable operation?
The absolute maximum gate-source voltage is ±20V per the datasheet's "Maximum Ratings" table. For long-term reliability, gate drive should be limited to ≤12V in continuous operation and ≤15V for transient pulses, as higher voltages accelerate gate oxide degradation without improving RDS(ON) beyond VGS = 10V.
Does the device support reverse current conduction through its body diodes?
Yes - each channel includes an intrinsic body diode with typical forward voltage of 1.2V at 115mA (VSD). These diodes support freewheeling in inductive loads and asynchronous rectification, but are not optimized for continuous reverse conduction due to relatively high VF and limited SOA.
How does thermal resistance change with PCB copper weight and pad size?
RθJA is specified as 288°C/W on FR-4 with 2oz copper and Diodes' recommended minimum pad layout. Increasing copper to 4oz and expanding thermal pads to 2×2mm reduces RθJA to ~190°C/W, enabling 0.32W continuous dissipation at +70°C ambient - verified in thermal simulation using JEDEC JESD51-7 test conditions.
DMN33D8LVQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48pF @ 5V
- Power - Max:
- 430mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN33D8LVQ-13 FAQ
1.How can I place an order for DMN33D8LVQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN33D8LVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN33D8LVQ-13 reliable?
The price and inventory of DMN33D8LVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D8LVQ-13 is usually 5 days.
3.What payment methods are accepted for DMN33D8LVQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D8LVQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN33D8LVQ-13?
DMN33D8LVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN33D8LVQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN33D8LVQ-13?
For technical support, including DMN33D8LVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D8LVQ-13 requirements.
6.How does Aetrix verify that DMN33D8LVQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN33D8LVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D8LVQ-13 meets industry standards.
7.What is the process for return or replacement of DMN33D8LVQ-13?
All DMN33D8LVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D8LVQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN33D8LVQ-13 part is unused and in its original packaging.
Return procedure for DMN33D8LVQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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