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Diodes Incorporated DMN33D8LVQ-7
- Part No.:
- DMN33D8LVQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN33D8LVQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.35A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:2,908
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Product details
Overview
DMN33D8LVQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 3Ω RDS(ON) @ VGS = 4.5V, and 350mA continuous drain current at +25°C. It features ESD-protected gate, low input capacitance (48pF Ciss), and AEC-Q101 qualification for automotive power management.
For engineers reviewing the DMN33D8LVQ-7 datasheet, DMN33D8LVQ-7 pinout, DMN33D8LVQ-7 application, or DMN33D8LVQ-7 equivalent, key selection criteria include dual-channel low-voltage switching capability, gate threshold stability across temperature (-55°C to +150°C), and thermal resistance of 288°C/W for compact DC-DC converter designs.
Technical Context
This dual N-channel MOSFET integrates two independent enhancement-mode transistors in a single SOT563 package with shared source terminals per channel (S1/G1/D1 and S2/G2/D2). Its gate threshold voltage ranges from 0.8V to 1.5V at ID = 100μA, enabling reliable turn-on with 2.5V–4.5V logic-level drive.
Dynamic performance includes 2.9ns turn-on delay and 18.2ns turn-off delay under VDD = 30V, RG = 25Ω conditions. The device maintains RDS(ON) variation within ±20% over -55°C to +125°C junction temperature when biased at VGS = 4.5V and ID = 300mA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V/24V automotive and industrial rail applications |
| RDS(ON) @ VGS = 4.5V | 3.0Ω - On-resistance enabling ≤1.1mW conduction loss at 250mA load in space-constrained DC-DC stages |
| ID Continuous @ +25°C | 350mA - Steady-state current handling per channel with FR-4 PCB layout and 2oz copper |
| Ciss | 48pF - Low input capacitance supporting >1MHz switching without excessive gate drive power |
| Qg @ VGS = 4.5V | 0.55nC - Minimal gate charge reducing switching losses in battery-powered motor control circuits |
| TJ Range | -55°C to +150°C - Junction temperature rating validated for under-hood automotive environments |
| AEC-Q101 Qualified | Yes - Certified for automotive electronics requiring PPAP documentation and IATF 16949 manufacturing |
Pinout & Package
Package: SOT563 - 6-pin ultra-small surface-mount package with 0.5mm pitch, 1.6mm × 1.6mm footprint, and 0.2mm typical lead length. Molded plastic body meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side switch node for first N-channel path; electrically isolated from D2 |
| G1 | Gate of Channel 1 | Logic-level control input with ESD protection; requires <1.5V threshold for 100μA ID |
| S1 | Source of Channel 1 | Return path for Channel 1; internally connected to common source terminal S2 |
| S2 | Source of Channel 2 | Shared source node with S1; enables synchronous buck or half-bridge configurations |
| G2 | Gate of Channel 2 | Independent logic-level control input; identical VGS(th) and Ciss to G1 |
| D2 | Drain of Channel 2 | Second high-side switch node; fully isolated from D1 for dual-load driving |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables compact dual-load switching or complementary half-bridge operation without external isolation |
| Low RDS(ON) @ 2.5V VGS | 7Ω - Supports direct interface with 2.5V microcontroller GPIOs in portable backlighting systems |
| ESD-protected gate | ±10μA IGSS leakage at ±16V - Prevents gate oxide damage during board assembly and handling |
| Lead-free & halogen-free | <900ppm Br/Cl, <1000ppm Sb - Complies with RoHS 3 and automotive green material requirements |
| Fast switching (tf = 13.6ns) | Reduces transition losses in 500kHz–1MHz DC-DC converters targeting >90% efficiency |
Applications
| Motor Control | DC-DC Converter |
|---|---|
|
Use Scenario: Driving small brushed DC motors in automotive HVAC actuators and seat positioners. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling direction and PWM speed via independent gate signals. Use Value: 350mA per channel supports 5W motor loads; 288°C/W RθJA prevents thermal shutdown in sealed enclosures. |
Use Scenario: Synchronous rectification in 12V-to-3.3V buck converters for infotainment SoCs. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes in fixed-frequency 1MHz topologies. Use Value: 3Ω RDS(ON) @ 4.5V reduces conduction loss by 65% vs. 0.4V-drop diode at 300mA output. |
| Automotive Backlighting | Power Management IC Auxiliary Switch |
|
Use Scenario: LED current regulation in instrument cluster backlight arrays with dimming control. IC Role / Device Role / Timing Role: Constant-current sink switch modulated by PWM from MCU or PMIC. Use Value: 7Ω RDS(ON) @ 2.5V allows direct 2.5V logic drive; 0.006g weight minimizes PCB stress in vibration-prone zones. |
Use Scenario: Enabling/disabling auxiliary rails (e.g., CAN transceiver bias, sensor bias) in multi-rail automotive PMICs. IC Role / Device Role / Timing Role: Standby-mode load switch controlled by PMIC enable signal. Use Value: 1μA IDSS at 30V ensures <10nW standby leakage; AEC-Q101 qualification guarantees reliability across vehicle lifecycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30V VDSS, 2.6Ω RDS(ON) @ 4.5V, SO-8 package (larger footprint, higher RθJA = 60°C/W) | Higher power dissipation capacity (1.4W) but unsuitable for ultra-compact layouts | Select when thermal budget exceeds 0.43W and PCB area permits SO-8 mounting |
| AOB2036L | 30V VDSS, 3.2Ω RDS(ON) @ 4.5V, TSOP-6 package (same pinout, 0.65mm pitch) | Non-AEC-Q101; lacks automotive change control and PPAP support | Select for cost-sensitive industrial applications where automotive qualification is not required |
Compared with DMN33D8LVQ-7, DMN3026LSD-13 offers higher power handling but sacrifices miniaturization, while AOB2036L matches form factor but omits AEC-Q101 compliance-making DMN33D8LVQ-7 the only choice for space-constrained, safety-critical automotive subsystems.
Availability
DMN33D8LVQ-7 is available at Aetrix Electronics and suitable for automotive motor controls, DC-DC converters, and LED backlighting requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN33D8LVQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.
The DMN33D8LVQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, designed specifically for space-constrained, thermally demanding automotive power management functions including body electronics and infotainment subsystems.
FAQ
Is DMN33D8LVQ-7 suitable for 2.5V logic-level drive?
Yes. The device specifies RDS(ON) = 7Ω at VGS = 2.5V and ID = 5mA, with gate threshold voltage VGS(th) ranging from 0.8V to 1.5V. This ensures robust turn-on using standard 2.5V GPIO outputs without external level shifting, validated across -40°C to +125°C ambient conditions.
What is the maximum pulsed drain current rating?
The pulsed drain current (IDM) is rated at 0.8A for 10μs pulses with 1% duty cycle. This rating assumes proper PCB thermal design per the datasheet's FR-4 layout recommendation (2oz copper, minimum pad size), and is limited by peak junction temperature rather than bond wire integrity.
Does DMN33D8LVQ-7 integrate body diodes?
Yes. Each channel includes an intrinsic body diode with forward voltage VSD ≤ 1.2V at IS = 115mA and VGS = 0V. These diodes support freewheeling current in inductive loads like motors and solenoids, and are characterized across -55°C to +150°C junction temperature.
How does the SOT563 package affect thermal performance?
The SOT563 package delivers 288°C/W junction-to-ambient thermal resistance on standard FR-4 with 2oz copper. Its low mass (0.006g) and exposed copper leadframe enhance transient thermal response, but steady-state power dissipation is capped at 0.43W at +25°C ambient-requiring derating above +70°C ambient per the datasheet's PD curve.
DMN33D8LVQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48pF @ 5V
- Power - Max:
- 430mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN33D8LVQ-7 FAQ
1.How can I place an order for DMN33D8LVQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN33D8LVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN33D8LVQ-7 reliable?
The price and inventory of DMN33D8LVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D8LVQ-7 is usually 5 days.
3.What payment methods are accepted for DMN33D8LVQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D8LVQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN33D8LVQ-7?
DMN33D8LVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN33D8LVQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN33D8LVQ-7?
For technical support, including DMN33D8LVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D8LVQ-7 requirements.
6.How does Aetrix verify that DMN33D8LVQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN33D8LVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D8LVQ-7 meets industry standards.
7.What is the process for return or replacement of DMN33D8LVQ-7?
All DMN33D8LVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D8LVQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN33D8LVQ-7 part is unused and in its original packaging.
Return procedure for DMN33D8LVQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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