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Diodes Incorporated DMN33D9LV-13
- Part No.:
- DMN33D9LV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN33D9LV-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.35A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:10,000
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Product details
Overview
DMN33D9LV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V V(BR)DSS, 3.0Ω RDS(ON) @ VGS = 4.5V, and 350mA continuous drain current at TA = +25°C. It integrates two matched low-RDS(ON) switches optimized for compact DC-DC converters and motor control in space-constrained portable electronics.
For engineers reviewing the DMN33D9LV-13 datasheet, DMN33D9LV-13 pinout, DMN33D9LV-13 application, or DMN33D9LV-13 equivalent, key selection criteria include gate threshold voltage (0.8–1.5V), input capacitance (48pF), fast switching times (tD(on) = 2.9ns), AEC-Q101 qualification, and dual-channel thermal coupling in a 6-pin SOT563 footprint.
Technical Context
This dual MOSFET features independent gate terminals (G1, G2) and shared source configuration (S1/S2 tied internally or externally), enabling synchronous buck topologies or H-bridge half-bridge drivers. Its low 7Ω RDS(ON) @ VGS = 2.5V supports logic-level drive from 2.5V/3.3V microcontrollers.
The device exhibits 0.14nC gate-source charge and 0.14nC gate-drain charge, minimizing drive power and enabling high-frequency operation up to 1MHz in point-of-load regulators. ESD protection to 2kV HBM ensures robustness during board assembly and field operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30V - maximum blocking voltage before avalanche conduction; defines safe operating range in 24V bus or 5V/12V DC-DC stages |
| RDS(ON) max | 3.0Ω @ VGS = 4.5V - determines I²R conduction loss at 250mA; enables <2mW static loss per channel |
| ID max | 350mA @ TA = +25°C - continuous current rating with standard FR-4 PCB layout; derates to 200mA at +70°C ambient |
| Ciss | 48pF - input capacitance at VDS = 5V; sets Miller effect and gate drive strength requirement for <10ns switching |
| tD(on) | 2.9ns - turn-on delay with 25Ω gate resistor; enables precise timing control in synchronous rectification |
| Qg | 1.23nC @ VGS = 10V - total gate charge defining driver IC selection; compatible with low-power GPIO-driven gate buffers |
| TJ range | −55°C to +150°C - extended junction temperature range supports automotive cabin and industrial ambient environments |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package (1.6mm × 1.2mm × 0.6mm), moisture sensitivity level 1, matte tin-plated copper leadframe, UL 94V-0 compliant molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 unless externally connected |
| D1 | Drain of Channel 1 | High-current output node for first switch; connects to inductor or load in buck/half-bridge |
| G1 | Gate of Channel 1 | Independent control input; requires 0.8–1.5V threshold for logic-level activation |
| S2 | Source of Channel 2 | Source terminal of second MOSFET; enables dual-switch configurations without shared-source constraint |
| D2 | Drain of Channel 2 | Second high-current output; supports complementary switching or parallel current sharing |
| G2 | Gate of Channel 2 | Fully independent gate; allows asynchronous or phase-shifted control of second channel |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 7Ω @ VGS = 2.5V - enables direct interface with 2.5V/3.3V MCUs without level-shifting circuitry |
| ESD-protected gate | 2kV HBM rating - eliminates need for external gate protection diodes in handheld and wearable designs |
| Fast switching performance | tD(off) = 18.2ns, tf = 13.6ns - reduces switching losses in >500kHz DC-DC converters |
| AEC-Q101 qualified | Automotive-grade reliability - validated for temperature cycling, HTOL, and ESD per stress test requirements |
| Green packaging | Halogen- and antimony-free, RoHS-compliant - meets IPC-1752A material declaration and EU environmental mandates |
Applications
| Portable USB-C Power Delivery | Smartphone Backlight Dimming |
|---|---|
Use Scenario: Dual-channel load switching for 5V/9V/15V negotiation and VCONN power path control in USB-C PD sink implementations. IC Role / Device Role / Timing Role: Dual N-MOSFET array performing bidirectional power path selection and VBUS discharge switching. Use Value: 3.0Ω RDS(ON) limits voltage drop to <1.5mV at 500mA, preserving PD communication integrity during state transitions. |
Use Scenario: PWM-controlled current sinking for white LED strings in OLED display backlight modules. IC Role / Device Role / Timing Role: Low-side current switch modulating LED current at 1–20kHz with minimal dead-time distortion. Use Value: 2.9ns tD(on) and 13.6ns tf enable precise 1% duty-cycle resolution at 20kHz, eliminating visible flicker. |
| Industrial Sensor Node Power Gating | Bluetooth LE Peripheral Power Management |
Use Scenario: Selective power gating of analog front-end (AFE), RF transceiver, and MCU subsystems in battery-powered IIoT nodes. IC Role / Device Role / Timing Role: Dual independent power switches enabling staggered wake-up sequencing and leakage isolation. Use Value: 1μA IDSS at VDS = 30V ensures <10nA standby leakage per channel, extending 10-year battery life targets. |
Use Scenario: Dynamic supply routing between coin-cell battery and energy-harvesting capacitor in BLE beacons. IC Role / Device Role / Timing Role: Dual-path OR-ing switch managing priority-based power source selection and fault isolation. Use Value: Matched RDS(ON) channels (<5% mismatch) prevent current hogging and ensure balanced source handover during voltage crossovers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30V, 2.2Ω @ 4.5V, SOT-363 package, single-gate dual-channel (common gate) | Shared gate limits independent channel control; unsuitable for phase-shifted or asymmetric PWM | Select when gate drive simplicity outweighs need for independent channel timing |
| AOB402WL | 30V, 2.8Ω @ 4.5V, WLCSP-6 package, higher thermal resistance (RθJA = 320°C/W) | Lower power density handling; not recommended above 200mA continuous per channel | Prefer only for ultra-thin wearables where 1.0mm × 1.0mm footprint is mandatory |
Compared with DMN33D9LV-13, DMN3026LSD-13 sacrifices channel independence for reduced gate drive complexity, while AOB402WL trades thermal performance for extreme miniaturization-neither matches the balanced combination of independent gates, 288°C/W RθJA, and AEC-Q101 qualification in the SOT563 package.
Availability
DMN33D9LV-13 is available at Aetrix Electronics and suitable for portable USB-C power delivery, smartphone backlight dimming, industrial sensor node power gating, and Bluetooth LE peripheral power management requiring stable component supply across production ramps and long-lifecycle programs.
Supply support for DMN33D9LV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
DMN33D9LV-13 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for high-efficiency, space-constrained power switching in battery-operated and thermally sensitive applications.
FAQ
Is DMN33D9LV-13 pin-compatible with DMN33D8LV-13?
Yes - both share identical SOT563 pinout (S1-D1-G1-S2-D2-G2), same marking layout, and identical mechanical dimensions per AP02002. Electrical specs differ slightly: DMN33D9LV-13 has tighter RDS(ON) distribution (2.4Ω typ vs. 3.0Ω max at 4.5V), but all pin functions, thermal pad absence, and solder profile requirements remain unchanged.
What is the maximum safe operating frequency for DMN33D9LV-13 in a synchronous buck converter?
Based on measured tD(off) = 18.2ns and tf = 13.6ns, the practical upper limit is 1.2MHz under light load with optimized gate drive. At full 350mA load, thermal constraints (PD = 0.43W max) and RDS(ON) rise with junction temperature limit reliable operation to ≤800kHz with 2oz copper PCB and 25°C ambient.
Does DMN33D9LV-13 support 1.8V logic-level gate drive?
No - its VGS(th) min is 0.8V, but RDS(ON) rises sharply below 2.5V: 12Ω typical at VGS = 1.8V. Reliable switching requires ≥2.5V gate drive; for true 1.8V systems, consider DMN2022LSD-7 (VGS(th) = 0.5V typ) in SOT-363, though with higher RDS(ON) and no AEC-Q101 rating.
Can S1 and S2 be shorted externally to create a common-source dual-N configuration?
Yes - the datasheet's equivalent circuit shows fully isolated source terminals. External shorting of S1 and S2 is permitted and commonly used in dual low-side switch applications. Ensure PCB layout symmetry to minimize parasitic inductance imbalance; thermal coupling remains beneficial for matched channel behavior.
DMN33D9LV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48pF @ 5V
- Power - Max:
- 430mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN33D9LV-13 FAQ
1.How can I place an order for DMN33D9LV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN33D9LV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN33D9LV-13 reliable?
The price and inventory of DMN33D9LV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D9LV-13 is usually 5 days.
3.What payment methods are accepted for DMN33D9LV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D9LV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN33D9LV-13?
DMN33D9LV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN33D9LV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN33D9LV-13?
For technical support, including DMN33D9LV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D9LV-13 requirements.
6.How does Aetrix verify that DMN33D9LV-13 is sourced from the original manufacturer or authorized distributors?
All DMN33D9LV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D9LV-13 meets industry standards.
7.What is the process for return or replacement of DMN33D9LV-13?
All DMN33D9LV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D9LV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN33D9LV-13 part is unused and in its original packaging.
Return procedure for DMN33D9LV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN33D9LV-13 Tags
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