Diodes Incorporated DMN33D9LV-13A

Overview

DMN33D9LV-13A from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V V_DSS, 3Ω R_DS(ON) @ 4.5V_GS, and 350mA continuous drain current at +25°C - optimized for low-voltage DC-DC converters and backlighting circuits where space-constrained dual-switch topology is required.

For engineers reviewing the DMN33D9LV-13A datasheet, DMN33D9LV-13A pinout, DMN33D9LV-13A application, or DMN33D9LV-13A equivalent, key selection criteria include verified dual-channel R_DS(ON) matching at 2.5V–4.5V gate drive, ESD-protected gate terminals, and thermal performance validated on FR-4 with 2oz copper per Diodes DS41900 Rev. 3-2.

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices sharing a common source configuration (S1/S2 tied internally or externally), enabling synchronous rectification or half-bridge topologies without external cross-coupling. Its 0.55nC total gate charge at 4.5V_GS and 2.6ns rise time support high-frequency switching up to 1MHz in portable power rails.

The device operates across –55°C to +150°C junction temperature, with normalized R_DS(ON) variation ≤1.4× over that range at 4.5V_GS/300mA - critical for thermally stable motor control feedback paths and LED current regulation under ambient drift.

Key Specifications

Pinout & Package

SOT563 is a 6-pin, 1.6mm × 1.6mm × 0.6mm surface-mount package with exposed thermal pad (not electrically connected), matte tin-plated copper leadframe, and UL 94V-0 molding compound - designed for automated placement and reflow compatibility per J-STD-020 Level 3 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN33D9LV-13A, DMN3026LSD-13 doubles PCB area and assembly cost for dual functionality, while AOB2034L trades 1.5Ω higher R_DS(ON) for legacy package compatibility - making DMN33D9LV-13A optimal for new designs demanding minimal footprint and sub-3Ω on-resistance at logic-level drive.

Availability

DMN33D9LV-13A is available at Aetrix Electronics and suitable for motor control, DC-DC converters, backlighting, and power management functions requiring stable component supply in high-volume consumer and industrial production.

Supply support for DMN33D9LV-13A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The DMN33D9LV belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, battery-powered applications requiring dual-channel integration and robust gate ESD protection.

FAQ

What is the maximum continuous drain current for DMN33D9LV-13A at +70°C ambient?

The maximum continuous drain current is 200mA at TA = +70°C, as specified in the Absolute Maximum Ratings table of DS41900 Rev. 3-2. This derating reflects thermal limits of the SOT563 package on standard FR-4 with 2oz copper; actual current capability may increase with enhanced heatsinking or reduced ambient temperature.

Does DMN33D9LV-13A support independent source connections for each channel?

Yes - Pin 1 (S1) and Pin 6 (S2) are electrically isolated source terminals, enabling floating-source configurations such as level-shifted gate drives or differential current sensing. The internal schematic confirms no internal connection between S1 and S2, unlike common-source dual MOSFETs.

Is the "A" suffix in DMN33D9LV-13A functionally different from DMN33D9LV-13?

No functional difference exists - the "A" suffix indicates inclusion of a Pin 1 indicator mark on the package top surface (visible via magnification), per Note 5 in DS41900. Electrical, thermal, and reliability specifications are identical between -13 and -13A variants.

Can DMN33D9LV-13A be used in automotive applications?

DMN33D9LV-13A is not AEC-Q101 qualified. Diodes Incorporated states that automotive-grade versions require explicit change control, PPAP capability, and IATF 16949 manufacturing - customers must contact Diodes directly for qualified alternatives like the AEC-Q101-compliant DMN3026LSDQ-13.