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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN33D9LV-7

Name: DMN33D9LV-7
Brand: Diodes Incorporated
SKU: DMN33D9LV-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN33D9LV-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: DMN33D9LV-7.pdf

Description:: MOSFET 2N-CH 30V 0.35A SOT563

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Product details

Overview

DMN33D9LV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V V_DSS, 3Ω R_DS(ON) @ 4.5V V_GS, and 350mA continuous drain current at +25°C - optimized for low-voltage DC-DC converters and backlighting circuits where space-constrained dual-switch operation is required.

For engineers reviewing the DMN33D9LV-7 datasheet, DMN33D9LV-7 pinout, DMN33D9LV-7 application, or DMN33D9LV-7 equivalent, key selection criteria include verified dual-channel R_DS(ON) matching at low gate drive (2.5–4.5V), ESD-protected gate terminals, and thermal performance under FR-4 PCB mounting with 2oz copper.

Technical Context

This device integrates two independent N-channel MOSFETs sharing no internal connection - each channel exhibits identical threshold voltage (0.8–1.4V) and on-resistance behavior across temperature (-55°C to +150°C). Gate charge is tightly controlled (Q_g = 0.55nC @ 4.5V), enabling fast switching (t_r = 2.6ns, t_f = 13.6ns) with minimal drive power.

The SOT563 package provides six terminals with isolated source-drain-gate routing per channel, supporting high-density layout in portable power rails. Input capacitance (C_iss = 48pF) and reverse transfer capacitance (C_rss = 8pF) are specified at V_DS = 5V, ensuring predictable Miller effect in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - supports input rails up to 24V nominal systems with margin for transients
R_DS(ON) @ 4.5V	3Ω max - enables ≥85% efficiency in 3.3V-output buck converters at 200mA load
R_DS(ON) @ 2.5V	7Ω max - ensures functional turn-on with logic-level microcontroller GPIO drive
I_D (continuous)	350mA @ +25°C - suitable for LED string current control or small motor gate drivers
C_iss	48pF - limits gate drive current requirement to <1mA peak for 1MHz switching
R_θJA	288°C/W - requires minimum 2oz copper pad for sustained 200mW dissipation
ESD rating	HBM ±2kV - protects against handling damage during SMT assembly and board test

Pinout & Package

SOT563 is a 6-pin, surface-mount plastic package measuring 1.60 × 1.60 × 0.60 mm with gull-wing leads and matte tin finish over copper leadframe. Moisture sensitivity level is J-STD-020 Level 3.

Pin/Terminal	Circuit Role	Design Meaning
1 (S1)	Source of Channel 1	Low-side return path for first MOSFET; tied to local ground plane in half-bridge configuration
2 (G1)	Gate of Channel 1	Control terminal requiring 0.55nC total charge for full enhancement; ESD-protected
3 (D1)	Drain of Channel 1	Switched output node; rated for 30V blocking and 0.5A body diode conduction
4 (D2)	Drain of Channel 2	Independent high-side or low-side switch node; electrically isolated from D1
5 (G2)	Gate of Channel 2	Second independent control input; matched threshold and timing to G1
6 (S2)	Source of Channel 2	Separate return path enabling dual low-side switching or level-shifted high-side drive

Key Features

Feature	Design Value
Dual independent N-channel topology	Enables compact dual-switch functions (e.g., dual LED drivers or H-bridge legs) without external isolation components
Low R_DS(ON) at 2.5V V_GS	7Ω max allows direct interface with 2.5V/3.3V logic outputs without level-shifting circuitry
Fast switching (t_ON = 2.9ns)	Reduces transition losses in >1MHz DC-DC controllers, improving light-load efficiency
ESD-protected gate	±2kV HBM rating eliminates need for external gate protection in automated assembly lines
Green, halogen-free construction	Meets IEC 61249-2-21 and JEDEC JS709B standards for bromine/chlorine/antimony content

Applications

LED Backlight Control

USB-C Power Path Switching

Use Scenario: Driving parallel white LED strings in portable displays using PWM dimming at 1–5kHz.

IC Role / Device Role / Timing Role: Dual low-side switch controlling cathode current paths; one channel per LED bank.

Use Value: 3Ω R_DS(ON) minimizes forward-voltage drop and thermal rise at 200mA per string, extending battery life.

Use Scenario: Enabling/disabling 5V power delivery from USB-C port to system rail with reverse-current blocking.

IC Role / Device Role / Timing Role: Dual N-MOSFET used in back-to-back configuration for bidirectional blocking and low-loss conduction.

Use Value: Matched channel parameters ensure symmetrical on-resistance and prevent shoot-through during hot-plug events.

Small Motor Gate Driver

Load Switch for IoT Sensor Rails

Use Scenario: Driving gate of external P-channel high-side MOSFET in brushed DC motor H-bridge.

IC Role / Device Role / Timing Role: Low-side driver providing fast turn-on/turn-off of P-MOSFET gate with controlled slew rate.

Use Value: 0.55nC Q_g reduces gate drive power by 40% vs. comparable 6-pin alternatives, easing MCU GPIO loading.

Use Scenario: Sequencing power to BLE/Wi-Fi sensor subsystems during sleep/wake transitions.

IC Role / Device Role / Timing Role: Dual independent load switches isolating 1.8V and 3.3V sensor domains from main SoC rail.

Use Value: Independent enable control per channel allows staggered power-up, reducing inrush current peaks by >60%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	Single-channel, 30V, 2.8Ω @ 4.5V, SOT23-6 package	Requires two devices for dual function; larger footprint (2.9 × 1.6 mm vs. 1.6 × 1.6 mm)	Select when board layout permits discrete placement and higher R_DS(ON) tolerance is acceptable
AO6401	Dual N-channel, 30V, 4.5Ω @ 4.5V, SOT23-6 package	Higher R_DS(ON) increases conduction loss by ~50% at 200mA; same pinout but different marking	Choose only if cost sensitivity outweighs efficiency requirements in non-battery applications

Compared with DMN33D9LV-7, DMN3026LSD-13 offers lower on-resistance per channel but doubles PCB area and component count, while AO6401 sacrifices 50% conduction efficiency for marginal cost reduction - making DMN33D9LV-7 optimal for space- and efficiency-critical dual-switch designs.

Availability

DMN33D9LV-7 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power path management, and low-power motor control applications requiring stable component supply and consistent parametric matching across production lots.

Supply support for DMN33D9LV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN33D9LV-7 belongs to Diodes' low-voltage power MOSFET product line, engineered specifically for space-constrained, battery-powered systems demanding low gate-threshold operation and high thermal reliability in ultra-small packages.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The DMN33D9LV-7 has a rated operating junction temperature range of –55°C to +150°C. At +70°C ambient, its continuous drain current drops to 200mA due to thermal derating - confirmed by the 0.20W power dissipation limit and 288°C/W R_θJA. This reflects real-world PCB thermal performance, not idealized heatsink conditions.

Can both channels be paralleled to increase current capacity?

No - the DMN33D9LV-7 channels are electrically isolated but not matched for current sharing. Parallel operation is not recommended due to parametric variation in V_GS(TH) (0.8–1.4V) and R_DS(ON), which causes unequal current division and potential thermal runaway above 250mA total load.

Is the SOT563 package compatible with standard reflow profiles for lead-free soldering?

Yes - the SOT563 package is qualified for IPC/JEDEC J-STD-020 Level 3 moisture sensitivity and supports peak reflow temperatures up to 260°C. Its matte tin annealed finish meets MIL-STD-202 Method 208 solderability requirements, ensuring reliable wetting on OSP- or ENIG-finished PCBs.

Does the device include integrated body diodes, and what are their forward characteristics?

Yes - each channel includes an intrinsic body diode with typical forward voltage of 0.8V at 115mA (V_SD). The diode supports continuous forward current up to 0.5A and pulsed current up to 0.8A, enabling use in asynchronous DC-DC topologies and freewheeling paths without external diodes.

DMN33D9LV-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 350mA (Ta)

Rds On (Max) @ Id, Vgs:: 2.4Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 1.23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 48pF @ 5V

Power - Max:: 430mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-563

DMN33D9LV-7 FAQ

1.How can I place an order for DMN33D9LV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN33D9LV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN33D9LV-7 reliable?

The price and inventory of DMN33D9LV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D9LV-7 is usually 5 days.

3.What payment methods are accepted for DMN33D9LV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D9LV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN33D9LV-7?

DMN33D9LV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN33D9LV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN33D9LV-7?

For technical support, including DMN33D9LV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D9LV-7 requirements.

6.How does Aetrix verify that DMN33D9LV-7 is sourced from the original manufacturer or authorized distributors?

All DMN33D9LV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D9LV-7 meets industry standards.

7.What is the process for return or replacement of DMN33D9LV-7?

All DMN33D9LV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D9LV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN33D9LV-7 part is unused and in its original packaging.

Return procedure for DMN33D9LV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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