Diodes Incorporated DMN33D9LV-7A
- Part No.:
- DMN33D9LV-7A
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN33D9LV-7A.pdf
- Description:
- MOSFET 2N-CH 30V 0.35A SOT563
- Quantity:
- Payment:

- Shipping:

Inventory:2,250
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Product details
Overview
DMN33D9LV-7A from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 3Ω RDS(ON) @ VGS = 4.5V, and 350mA continuous drain current at +25°C. It delivers low on-resistance and fast switching for compact DC-DC converters and motor control circuits in space-constrained portable electronics.
For engineers reviewing the DMN33D9LV-7A datasheet, DMN33D9LV-7A pinout, DMN33D9LV-7A application, or DMN33D9LV-7A equivalent, key selection criteria include gate threshold voltage (0.8–1.4V), input capacitance (48pF), thermal resistance (288°C/W), dual-channel isolation, and SOT563 footprint compatibility with high-density PCB layouts.
Technical Context
This dual MOSFET integrates two independent N-channel silicon devices sharing no internal connection-enabling synchronous buck stage control or complementary half-bridge drive. Its 0.8–1.4V gate threshold supports direct logic-level drive from 1.8V/3.3V microcontrollers without level-shifting.
Designed for low-voltage, low-power switching, it features ESD-protected gates (±10μA IGSS), 0.55nC total gate charge at 4.5V, and normalized RDS(ON) drift of <1.2× from –55°C to +150°C-ensuring stable conduction across industrial temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Supports rail voltages up to 24V systems with 25% safety margin |
| RDS(ON) @ 4.5V | 3Ω max - Enables <100mW conduction loss at 180mA load in portable battery applications |
| ID (continuous) | 350mA @ +25°C - Sufficient for LED backlight drivers and small-signal motor gate control |
| Ciss | 48pF - Minimizes gate drive power and enables >1MHz switching in DC-DC regulators |
| Qg @ 4.5V | 0.55nC - Reduces required gate driver current and simplifies discrete FET driver design |
| RθJA | 288°C/W - Requires minimal copper area (≥25mm² 2oz Cu) for thermal compliance at full load |
| VGS(TH) | 0.8–1.4V - Ensures reliable turn-on with 1.8V GPIOs and avoids false triggering near ground |
Pinout & Package
SOT563 is a 6-pin, dual-source, surface-mount plastic package measuring 1.60 × 1.60 × 0.60 mm with exposed thermal pad (not electrically connected). Pin 1 indicator (on -7A variant) enables automated optical alignment during placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Common source node for first MOSFET; tied to local ground reference in half-bridge configurations |
| 2 (G1) | Gate of Channel 1 | Logic-level input requiring ≤0.14nC charge for full turn-on; ESD-protected per HBM 2kV |
| 3 (D1) | Drain of Channel 1 | Switched output node; connects to load or inductor in buck converter top switch position |
| 4 (D2) | Drain of Channel 2 | Independent high-side or synchronous rectifier node; electrically isolated from D1 |
| 5 (G2) | Gate of Channel 2 | Separate control input enabling independent timing or complementary PWM drive |
| 6 (S2) | Source of Channel 2 | Second source terminal; may be tied to different potential than S1 for floating gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) @ 4.5V | 3Ω max enables <105mW conduction loss at 180mA, critical for battery runtime extension |
| Low Ciss | 48pF minimizes gate drive energy and allows clean 1MHz+ switching without shoot-through risk |
| ESD-protected gate | HBM-rated ≥2kV eliminates need for external gate protection in handheld assembly lines |
| SOT563 footprint | 1.6×1.6mm outline saves >60% board area vs. SO-8 while maintaining thermal performance |
| Lead-free & Green | Halogen- and antimony-free compound (<900ppm Br/Cl, <1000ppm Sb) meets IPC-1752a Tier 1 reporting |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Bidirectional 5V stepper coil driver in medical insulin pumps with size-limited PCBs. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling phase A/B coil current direction and decay mode. Use Value: 3Ω RDS(ON) limits heat rise to <15°C at 150mA, eliminating heatsink and enabling IP67 sealing. | Use Scenario: Synchronous rectifier in 3.3V-output buck converter powering FPGA I/O banks. IC Role / Device Role / Timing Role: Second MOSFET in dual-FET buck stage, replacing Schottky diode to reduce forward drop. Use Value: 0.8V VSD body diode and 3Ω channel resistance cut rectifier losses by 42% vs. 1N5819 at 200mA. |
| LED Backlighting | Power Management Functions |
Use Scenario: PWM dimming driver for 12-segment OLED display in smartwatch bezel. IC Role / Device Role / Timing Role: Dual-channel constant-current sink for segment anodes, driven by 3.3V MCU timers. Use Value: 0.8–1.4V VGS(TH) ensures full turn-on at 3.3V logic, eliminating gate boost circuitry. | Use Scenario: Load switch for USB-C accessory detection circuit with 5V VBUS isolation. IC Role / Device Role / Timing Role: Dual-path enable switch routing VBUS to Type-C CC logic and PD controller separately. Use Value: Independent G1/G2 control allows staggered power-up sequencing to meet USB PD inrush limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(ON) (4.5Ω @ 4.5V), larger SOT-363 package (2.1×2.3mm) | Larger footprint reduces layout density; higher conduction loss increases thermal load | Select when legacy SOT-363 footprint reuse is required and 1.5× RDS(ON) penalty is acceptable |
| AOB2036L | Single-channel, TO-252 package, 2.2Ω @ 4.5V, 3.2A rating | Not pin-compatible; requires redesign for dual-channel functionality and SMT density | Choose only if higher current (>500mA) per channel is needed and board area is unconstrained |
Compared with DMN33D9LV-7A, DMN3026LSD-13 trades 50% higher on-resistance for backward SOT-363 compatibility, while AOB2036L abandons dual-channel integration entirely-making DMN33D9LV-7A the sole option meeting simultaneous requirements for SOT563 size, dual independent gates, and sub-3.5Ω RDS(ON) at 4.5V.
Availability
DMN33D9LV-7A is available at Aetrix Electronics and suitable for motor control, DC-DC converters, LED backlighting, and power management functions requiring stable component supply across consumer, industrial, and medical device production cycles.
Supply support for DMN33D9LV-7A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMN33D9LV belongs to Diodes' logic-level MOSFET product line, engineered specifically for space-constrained, battery-powered systems where low gate drive voltage, minimal conduction loss, and ultra-small packaging are mandatory.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN33D9LV-7A has an operating junction temperature range of –55°C to +150°C. Continuous operation at +150°C is permitted only when power dissipation remains within derated limits-specifically, ≤0.20W at +70°C ambient and ≤0.43W at +25°C ambient, per the thermal characteristics table in DS41900 Rev. 3-2.
Is the SOT563 package lead-free and RoHS compliant?
Yes. The DMN33D9LV-7A uses matte tin annealed over copper leadframe, fully complies with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU, and contains no intentionally added lead, halogens, or antimony-meeting Diodes' "Green" definition with <900ppm bromine/chlorine and <1000ppm antimony compounds.
Can both channels be used in parallel to increase current handling?
No. The DMN33D9LV-7A's dual channels are electrically isolated but not matched for paralleling-RDS(ON) tolerance (min/typ/max spread) and thermal coupling differences cause current imbalance. Parallel use is not characterized or recommended; instead, select a single-channel part rated for higher current if needed.
Does the -7A suffix affect electrical performance versus -7?
No. Per Note 5 in the datasheet, the "A" suffix indicates inclusion of a Pin 1 indicator mark on the package top surface for automated optical alignment. There is no difference in electrical specifications, thermal performance, reliability, or packaging dimensions between DMN33D9LV-7 and DMN33D9LV-7A.
DMN33D9LV-7A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48pF @ 5V
- Power - Max:
- 430mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN33D9LV-7A FAQ
1.How can I place an order for DMN33D9LV-7A through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN33D9LV-7A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN33D9LV-7A reliable?
The price and inventory of DMN33D9LV-7A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN33D9LV-7A is usually 5 days.
3.What payment methods are accepted for DMN33D9LV-7A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN33D9LV-7A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN33D9LV-7A?
DMN33D9LV-7A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN33D9LV-7A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN33D9LV-7A?
For technical support, including DMN33D9LV-7A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN33D9LV-7A requirements.
6.How does Aetrix verify that DMN33D9LV-7A is sourced from the original manufacturer or authorized distributors?
All DMN33D9LV-7A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN33D9LV-7A meets industry standards.
7.What is the process for return or replacement of DMN33D9LV-7A?
All DMN33D9LV-7A units undergo pre-shipment inspection (PSI). If there is an issue with DMN33D9LV-7A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN33D9LV-7A part is unused and in its original packaging.
Return procedure for DMN33D9LV-7A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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