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Diodes Incorporated DMN3401LDW-13
- Part No.:
- DMN3401LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN3401LDW-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.8A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:18,224
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Product details
Overview
DMN3401LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, 0.4Ω RDS(ON) @ 10VGS, and 0.8A continuous drain current at +25°C. It integrates two matched low-RDS(ON) switches with ESD-protected gates and fast switching (tF = 13.8ns), deployed in compact DC-DC converter power stages and motor drive half-bridges.
For engineers reviewing the DMN3401LDW-13 datasheet, DMN3401LDW-13 pinout, DMN3401LDW-13 application, or DMN3401LDW-13 equivalent, key selection criteria include gate threshold voltage (0.8–1.6V), thermal resistance (360°C/W on 1-in² copper), input capacitance (50pF), body diode forward voltage (0.7–1.2V), and dual-channel isolation in a 6-pin leadless package.
Technical Context
This dual MOSFET uses planar silicon process to achieve matched channel characteristics across both N-channel devices, enabling synchronous rectification and complementary switching without external balancing. Its low Qg (1.2nC @ 10VGS) and low Ciss/Coss ratio support high-frequency operation up to 1MHz in buck converters.
The device features integrated gate protection diodes and ESD-rated gate oxide (±20V VGSS), with guaranteed RDS(ON) performance over −55°C to +150°C junction temperature range. Thermal design relies on its 0.35W power dissipation rating on FR-4 with 1-in² copper pour.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage before avalanche conduction; sets upper limit for input rail in 24V systems. |
| RDS(ON) @ 10VGS | 0.4Ω max - Enables ≤160mW conduction loss at 0.8A; critical for efficiency in portable power rails. |
| ID (continuous) | 0.8A @ +25°C - Defines steady-state current capability; derates to 0.6A at +70°C ambient. |
| Ciss | 50pF - Low input capacitance reduces gate drive power and speeds turn-on; supports <10ns tD(ON). |
| tF | 13.8ns - Fast fall time minimizes switching overlap losses in half-bridge configurations. |
| VGS(TH) | 0.8–1.6V - Low threshold enables direct logic-level drive from 3.3V/5V microcontrollers. |
| RθJA | 360°C/W - Thermal resistance on 1-in² copper; determines junction rise under 0.35W dissipation. |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount, lead-free plastic package with 0.65mm pitch, 2.15mm × 2.10mm footprint, and 0.95mm height. Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Q1 Source) | Source terminal of first N-MOSFET | Common source node for Q1; electrically isolated from Q2 source unless externally tied. |
| 2 (Q1 Gate) | Gate terminal of first N-MOSFET | Control input for Q1; ESD-protected; requires ≤20V drive relative to its source. |
| 3 (Q1 Drain) | Drain terminal of first N-MOSFET | High-side switch node for Q1; shares drain pad with Q2 drain in common-drain configuration. |
| 4 (Q2 Drain) | Drain terminal of second N-MOSFET | Shared drain node with Pin 3; enables dual-N half-bridge or parallel switch topology. |
| 5 (Q2 Gate) | Gate terminal of second N-MOSFET | Independent control input for Q2; identical gate structure and threshold to Pin 2. |
| 6 (Q2 Source) | Source terminal of second N-MOSFET | Separate source node for Q2; allows independent source referencing or current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Enables space-efficient half-bridge or load-switch pairing without discrete matching components. |
| Low RDS(ON) @ 4.5VGS | 0.7Ω max - Ensures usable conduction at 3.3V logic levels, reducing need for gate boosters. |
| ESD-protected gate | Rated to ±2kV HBM - Eliminates need for external gate protection in board-level ESD environments. |
| Low Qgd/Qg ratio | 0.1nC / 1.2nC - Reduces Miller-induced shoot-through risk during hard switching in synchronous converters. |
| Green, halogen-free construction | <900ppm Br+Cl, <1000ppm Sb - Meets IPC-1752A Class 3 reporting requirements for automotive and industrial OEMs. |
Applications
| USB Power Delivery Switching | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Dual-path USB-C power routing with dynamic load switching between VBUS and accessory power rails. IC Role / Device Role: Dual N-MOSFET load switch controlling upstream/downstream power paths with independent gate control. Use Value: 0.7Ω RDS(ON) @ 4.5VGS limits voltage drop to <350mV at 500mA, preserving PD negotiation margins. |
Use Scenario: Compact 5V–12V brushed motor driver in battery-powered tools and robotics. IC Role / Device Role: Half-bridge high-side/low-side switch pair driving motor winding with PWM-controlled direction and speed. Use Value: Matched RDS(ON) and fast tF (13.8ns) minimize dead-time losses and enable 20kHz+ PWM without shoot-through. |
| Point-of-Load DC-DC Converter | LED Backlight Dimming Circuit |
|
Use Scenario: 3.3V/5V buck converter for FPGA I/O banks or sensor subsystems in space-constrained IoT nodes. IC Role / Device Role: Synchronous rectifier and high-side switch in integrated buck stage with external controller. Use Value: 50pF Ciss and 1.2nC Qg allow efficient 1MHz operation with minimal gate drive loss and layout parasitic sensitivity. |
Use Scenario: PWM-controlled LED string dimming in automotive instrument clusters or smart displays. IC Role / Device Role: Dual-channel current sink for independent brightness control of RGB LED segments. Use Value: Independent source terminals (Pins 1 & 6) enable separate current sensing per channel, supporting closed-loop dimming accuracy ±2%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | 30V, 0.29Ω @ 10VGS, SOT26 package (smaller footprint, higher RDS(ON) temp coefficient) | Higher conduction loss above 85°C; not suitable for thermally dense 150°C junction designs | Select when board area is constrained and peak current ≤0.6A; verify thermal margin with RθJA = 420°C/W. |
| FDMA1023NZ | 30V, 0.32Ω @ 4.5VGS, WDFN-6 package (0.9×1.5mm), no integrated gate protection diode | Requires external gate ESD clamp; better RDS(ON) at low VGS but higher layout complexity | Prefer for ultra-low-profile designs where gate protection is implemented at system level and 4.5V drive dominates. |
Compared with DMN3401LDW-13, DMN3029LSD-13 saves PCB area but sacrifices thermal robustness above 100°C, while FDMA1023NZ improves low-VGS conduction but adds design overhead for gate protection-making DMN3401LDW-13 optimal for balanced performance, reliability, and ease of use in industrial and automotive-qualified layouts.
Availability
DMN3401LDW-13 is available at Aetrix Electronics and suitable for USB power delivery modules, brushed DC motor drivers, point-of-load DC-DC converters, and LED backlight dimming circuits requiring stable component supply and long-term manufacturability.
Supply support for DMN3401LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The DMN3401LDW belongs to Diodes' high-efficiency power MOSFET product line, engineered specifically for space-constrained, thermally demanding power management in consumer, industrial, and automotive applications.
FAQ
Is DMN3401LDW-13 suitable for automotive applications?
No-DMN3401LDW-13 is not AEC-Q101 qualified. While it operates from −55°C to +150°C and meets RoHS/Green standards, Diodes explicitly states that automotive-grade variants require PPAP capability and IATF 16949 manufacturing; this part is intended for industrial and commercial use only.
Can DMN3401LDW-13 be used in common-source or common-drain configurations?
Yes-its pinout supports both: Pins 1 and 6 are independent sources, Pin 3 and Pin 4 share the same drain pad, and Pins 2 and 5 are isolated gates. This allows flexible implementation as dual common-source switches, back-to-back switches, or shared-drain half-bridges without external re-routing.
What is the maximum safe operating area (SOA) limitation at 100µs pulse width?
At 100µs pulse width and TC = 25°C, the SOA curve (Figure 12) limits operation to ≤3.5A at 10V VDS or ≤1.2A at 30V VDS. Exceeding these boundaries risks single-pulse thermal runaway due to insufficient heat dissipation in the short duration.
Does the body diode support reverse recovery in synchronous rectification?
No-the body diode is an inherent parasitic PN junction with no specified reverse recovery time (trr). Its VSD is 0.7–1.2V at 10mA, and it conducts only during freewheeling; synchronous rectification must rely on active gate control of the MOSFET channel-not diode conduction-for efficiency.
DMN3401LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 15V
- Power - Max:
- 290mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN3401LDW-13 FAQ
1.How can I place an order for DMN3401LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3401LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3401LDW-13 reliable?
The price and inventory of DMN3401LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3401LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN3401LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3401LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3401LDW-13?
DMN3401LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3401LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3401LDW-13?
For technical support, including DMN3401LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3401LDW-13 requirements.
6.How does Aetrix verify that DMN3401LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN3401LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3401LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN3401LDW-13?
All DMN3401LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3401LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3401LDW-13 part is unused and in its original packaging.
Return procedure for DMN3401LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3401LDW-13 Tags
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