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Diodes Incorporated DMN3401LV-13
- Part No.:
- DMN3401LV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN3401LV-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.8A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:9,535
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Product details
Overview
DMN3401LV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 0.4Ω RDS(ON) @ 10VGS, and 0.8A continuous drain current at +25°C. It serves as a compact, low-loss power switch in space-constrained DC-DC converters and motor control stages.
For engineers reviewing the DMN3401LV-13 datasheet, DMN3401LV-13 pinout, DMN3401LV-13 application, or DMN3401LV-13 equivalent, key selection criteria include its dual-channel layout in ultra-small SOT563, gate threshold voltage range (0.8–1.6V), low input capacitance (50pF), fast switching times (tD(ON) = 3.5ns), and ESD-protected gate structure.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel operates with identical 30V breakdown rating, 0.4Ω max RDS(ON) at 10VGS, and 0.7Ω at 4.5VGS. Its low gate charge (Qg = 1.2nC @ 10VGS) enables efficient high-frequency switching in synchronous buck topologies.
The device uses a standard enhancement-mode silicon process with fully lead-free, halogen-free "Green" packaging. Thermal resistance is 257°C/W (RθJA, minimum pad) and 155°C/W (RθJA, 1-inch² copper), confirming suitability for thermally constrained PCB layouts without heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports 24V rail systems with 20% margin against transients |
| RDS(ON) @ 10VGS | 0.4Ω max - limits conduction loss to ≤320mW at 0.8A DC load |
| RDS(ON) @ 4.5VGS | 0.7Ω max - ensures turn-on under 5V logic-level drive without external level shift |
| Ciss | 50pF - reduces gate drive power requirement in 1–2MHz switching applications |
| tD(ON) + tR | 6.8ns total - enables clean edge control in high-speed PWM dimming and motor commutation |
| ESD Rating | HBM ±2kV - protects gate oxide during board handling and reflow assembly |
| PD @ 25°C | 0.49W - defines maximum steady-state dissipation on standard FR-4 with minimal copper |
Pinout & Package
Package: SOT563 - 6-pin, dual-source, ultra-compact surface-mount package (1.6mm × 1.6mm × 0.6mm), RoHS-compliant, matte tin-plated leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Low-side return path for Channel 1; internally connected to Pin 4 in dual-SOIC layout but isolated in SOT563 |
| 2 | Gate 1 | Control input for Channel 1; ESD-protected, threshold 0.8–1.6V |
| 3 | Drain 1 | High-side switching node for Channel 1; rated 30V, handles pulsed currents up to 4.5A |
| 4 | Source 2 | Independent return path for Channel 2; electrically isolated from Pin 1 |
| 5 | Gate 2 | Separate control input for Channel 2; identical electrical characteristics to Pin 2 |
| 6 | Drain 2 | Second high-side switching node; enables dual-phase or complementary switching without cross-coupling |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables compact half-bridge or dual-load switching in <2.6mm² footprint, eliminating discrete pairing |
| Low RDS(ON) at 4.5VGS | 0.7Ω max ensures full enhancement using standard 5V microcontroller GPIOs without gate drivers |
| Low Ciss and Qg | 50pF input capacitance and 1.2nC total gate charge minimize driver losses in >1MHz DC-DC controllers |
| ESD-protected gate | ±2kV HBM rating prevents field-induced gate oxide failure during automated assembly and test |
| Halogen- and antimony-free "Green" compound | Meets IEC 61249-2-21:2017; Br+Cl <1500ppm, Sb <1000ppm - supports automotive and medical compliance |
Applications
| Motor Control | DC-DC Converter |
|---|---|
|
Use Scenario: Bidirectional 12V brushed DC motor drive in portable medical pumps. IC Role / Device Role / Timing Role: Dual low-side switch controlling H-bridge direction and braking via independent gate control. Use Value: 0.7Ω RDS(ON) at 4.5VGS enables direct MCU GPIO drive; dual-channel integration eliminates routing congestion in 4-layer PCBs. |
Use Scenario: Synchronous buck converter for FPGA core voltage (1.2V/3A) in industrial edge AI modules. IC Role / Device Role / Timing Role: High-side and low-side switch pair operating at 1.5MHz with dead-time control. Use Value: 6.8ns combined turn-on delay ensures tight duty-cycle fidelity; low Qg reduces gate driver thermal load. |
| LED Backlighting | Power Management IC Interface |
|
Use Scenario: PWM-dimming driver for 4-channel automotive instrument cluster backlighting (24V input). IC Role / Device Role / Timing Role: Low-side current sink per LED string, switched at 20kHz to eliminate audible noise. Use Value: Fast 13.8ns fall time suppresses current overshoot during dimming transitions; 30V rating accommodates load dump transients. |
Use Scenario: Load switch enabling/disabling auxiliary rails (USB-C PD, sensor bias) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Dual independent enable-controlled power paths with controlled slew rate. Use Value: Independent gate control allows staggered sequencing; 0.49W PD permits 0.8A continuous per channel without derating at 60°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029LSD-13 | Single-channel SOT23-6, 30V, 0.029Ω RDS(ON) @ 10VGS, higher current (4.2A) | Requires two devices for dual function; larger footprint (2.9mm × 1.6mm vs. 1.6mm × 1.6mm) | Select when lower RDS(ON) dominates over size and cost; not suitable for space-constrained dual-switch layouts. |
| AOB410L | SO-8 dual N-channel, 30V, 0.016Ω RDS(ON) @ 10VGS, 12A ID, no ESD protection | Higher power handling but 5× larger area; requires external ESD protection in handling-sensitive environments | Choose for high-current (>2A) dual switching where thermal mass and board area permit SO-8; avoid in handheld or medical assemblies. |
Compared with DMN3029LSD-13 and AOB410L, the DMN3401LV-13 uniquely balances ultra-small SOT563 size, logic-level compatibility, integrated ESD protection, and dual-channel isolation-making it optimal for miniaturized, low-to-moderate current power switches where board area and assembly robustness are critical.
Availability
DMN3401LV-13 is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, LED backlighting, and power management functions requiring stable component supply across industrial, medical, and consumer electronics programs.
Supply support for DMN3401LV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.
The DMN3401LV belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power switching in battery-operated and thermally limited applications.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMN3401LV-13?
The DMN3401LV-13 has a rated junction temperature range of –55°C to +150°C. Its RDS(ON) increases by ~1.8× from 25°C to 125°C at fixed VGS, per Figure 6. Derating begins at +70°C ambient for continuous 0.8A operation on standard FR-4; full-rated current requires ≤+55°C ambient or enhanced copper layout.
Can DMN3401LV-13 be used in linear regulation mode?
No-this device is optimized for switching operation only. Its Safe Operating Area (Figure 12) shows no DC linear region beyond 0.1A at 10V VDS; sustained linear use causes rapid thermal runaway due to positive RDS(ON) temperature coefficient and limited 0.49W power dissipation.
Does the SOT563 package support reflow soldering per JEDEC J-STD-020?
Yes-the SOT563 package is rated Moisture Sensitivity Level 1 (MSL-1), meaning it may be stored indefinitely at ≤30°C/85% RH and subjected to standard Pb-free reflow profiles (peak 260°C, 20–40s above 217°C) without baking or special handling.
Are the two channels in DMN3401LV-13 internally connected or isolated?
The two N-channel MOSFETs are fully isolated-no shared source, drain, or substrate connection. Pins 1 (S1) and 4 (S2) are separate terminals; this enables true independent switching, floating half-bridge configurations, or dual-rail load switching without crosstalk.
DMN3401LV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 15V
- Power - Max:
- 490mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN3401LV-13 FAQ
1.How can I place an order for DMN3401LV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3401LV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3401LV-13 reliable?
The price and inventory of DMN3401LV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3401LV-13 is usually 5 days.
3.What payment methods are accepted for DMN3401LV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3401LV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3401LV-13?
DMN3401LV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3401LV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3401LV-13?
For technical support, including DMN3401LV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3401LV-13 requirements.
6.How does Aetrix verify that DMN3401LV-13 is sourced from the original manufacturer or authorized distributors?
All DMN3401LV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3401LV-13 meets industry standards.
7.What is the process for return or replacement of DMN3401LV-13?
All DMN3401LV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3401LV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3401LV-13 part is unused and in its original packaging.
Return procedure for DMN3401LV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3401LV-13 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
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