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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN34D0U-7

Name: DMN34D0U-7
Brand: Diodes Incorporated
SKU: DMN34D0U-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN34D0U-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN34D0U-7.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

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Product details

Overview

DMN34D0U-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 25V V_DSS, 4Ω R_DS(ON) @ V_GS = 4.5V, and 0.3A continuous drain current at +25°C. It features low gate threshold (0.7–1.1V), ESD-protected gate, and fast switching (t_D(ON) = 3.3ns), enabling use in compact DC-DC converters and battery-powered load switching.

For engineers reviewing the DMN34D0U-7 datasheet, DMN34D0U-7 pinout, DMN34D0U-7 application, or DMN34D0U-7 equivalent, key selection criteria include verified R_DS(ON) at low V_GS (2.7V/5Ω), thermal resistance (R_θJA = 222°C/W with copper pad), and SOT23 footprint compatibility in space-constrained power management designs.

Technical Context

This MOSFET employs planar silicon process to achieve low on-resistance while maintaining controlled gate charge (Q_g = 0.4nC) and low input capacitance (C_iss = 24pF). Its 0.7–1.1V V_GS(TH) enables direct drive from 1.8V/2.5V logic outputs without level shifting.

The device integrates an ESD protection diode across gate-source and exhibits body diode forward voltage of 0.7–1.2V at 0.29A. Safe operating area (SOA) is characterized up to 10ms pulses at 0.3A/6V, supporting transient load switching in relay and solenoid drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25V - Maximum drain-source blocking voltage for low-voltage power rail switching
R_DS(ON)	4Ω @ V_GS = 4.5V - Enables <120mW conduction loss at 0.2A, critical for efficiency in portable systems
I_D (continuous)	0.3A @ T_A = +25°C - Supports small-signal load switching with FR-4 PCB thermal relief
V_GS(TH)	0.7–1.1V - Ensures turn-on with 1.8V I/O microcontrollers without gate driver
C_iss	24pF - Limits gate drive energy requirement and enables >1MHz PWM operation
t_D(ON)	3.3ns - Reduces switching transition time, minimizing overlap losses in synchronous buck stages
R_θJA	222°C/W - Achieved with 1-inch² copper pad; defines maximum ambient temperature for 0.3A continuous operation

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.4mm × 1.3mm × 0.915mm), UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (high-side or low-side switch node)	Connected to load or power rail; handles full switched current and must be routed with adequate copper area for thermal dissipation
Gate (G)	Control electrode for channel formation	ESD-protected input requiring <0.4nC charge for full enhancement; sensitive to floating states-must be actively driven or pulled down
Source (S)	Reference terminal for gate control and current return path	Common node for load return or ground reference; body diode anode-critical for reverse-current path in flyback or H-bridge configurations

Key Features

Feature	Design Value
Low R_DS(ON) at low V_GS	5Ω @ V_GS = 2.7V enables direct interface with 2.7V/3.3V logic without gate boosting
ESD-protected gate	Integrated gate-body diode withstands >2kV HBM per JESD22-A114, reducing external protection needs
Fast switching speed	Turn-on delay <3.5ns and rise time <16ns support high-frequency (>500kHz) DC-DC control loops
Thermally optimized SOT23	R_θJA = 222°C/W with 1-inch² copper pad allows 0.3A operation up to +70°C ambient
Lead-free & Green compliance	Fully RoHS 3 compliant with <900ppm Br+Cl and <1000ppm Sb-qualified for consumer and industrial end equipment

Applications

Battery-Powered Load Switching

Low-Voltage DC-DC Converter Sync Rectifier

Use Scenario: Power gating of sensors, displays, or peripherals in wearables and IoT nodes powered by single-cell Li-ion (2.7–4.2V).

IC Role / Device Role: Low-side load switch controlling power delivery to subsystems during sleep/wake cycles.

Use Value: 0.7–1.1V V_GS(TH) ensures reliable turn-on from 2.7V supply; 4Ω R_DS(ON) limits dropout to <1.2mV at 0.3A, preserving battery runtime.

Use Scenario: Secondary-side rectification in 3.3V-output buck converters using 3.3V controller ICs.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: 4Ω R_DS(ON) cuts forward drop vs. 0.3V Schottky, improving efficiency by ~1.5% at 0.2A output under light load.

Microcontroller-Driven Relay/Solenoid Driver

LED Backlight Dimming Control

Use Scenario: Driving 12V/200mA electromechanical relays or solenoids from 3.3V GPIO pins in PLC I/O modules.

IC Role / Device Role: Low-side switch interfacing MCU outputs to inductive loads with integrated flyback path.

Use Value: Body diode V_SD = 0.7–1.2V clamps inductive kickback; fast t_F = 14ns minimizes energy dissipation during turn-off.

Use Scenario: PWM dimming of white LED strings (3.0–3.6V forward) in handheld medical devices.

IC Role / Device Role: High-side or low-side current switch modulating LED current at 1–10kHz.

Use Value: C_iss = 24pF and Q_g = 0.4nC enable clean 10kHz square-wave switching with <50ns rise/fall, eliminating visible flicker.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(ON) = 2.6Ω @ V_GS = 4.5V; higher I_D = 0.5A; SOT23-6 package with separate source pin	Supports higher current but requires larger layout and different gate drive routing due to 6-pin configuration	Select when >0.3A load current or lower conduction loss is required; verify PCB footprint compatibility
AO3400	R_DS(ON) = 28mΩ @ V_GS = 10V; V_GS(TH) = 0.8–1.8V; higher Q_g = 12nC; same SOT23-3 package	Optimized for 5V gate drive; unsuitable for 2.7V logic without level shift due to higher V_GS(TH) max	Prefer for 5V systems where gate drive strength permits; avoid in 1.8V/2.7V MCU interfaces

Compared with DMN34D0U-7, DMN3026LSD-13 offers lower R_DS(ON) but demands board redesign, while AO3400 delivers superior conduction performance only when driven above 4.5V-making DMN34D0U-7 uniquely suited for ultra-low-voltage, space-constrained switching where gate drive headroom is limited.

Availability

DMN34D0U-7 is available at Aetrix Electronics and suitable for battery management systems, portable medical devices, and IoT sensor nodes requiring stable component supply with consistent SOT23 footprint and low-V_GS drive capability.

Supply support for DMN34D0U-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMN34D0U-7 belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for efficient, compact power switching in battery-operated and space-constrained applications where gate drive voltage is limited to ≤3.3V.

FAQ

What is the maximum continuous drain current for DMN34D0U-7 at +70°C ambient?

The DMN34D0U-7 supports 0.24A continuous drain current at T_A = +70°C when mounted on an FR-4 PCB with 2oz copper and minimum recommended pad layout. This derating reflects thermal limits imposed by its R_θJA = 283°C/W in standard layout, ensuring junction temperature remains below 150°C.

Does DMN34D0U-7 have integrated ESD protection, and what level is specified?

Yes, DMN34D0U-7 includes integrated gate-source ESD protection diodes. While the datasheet does not specify exact HBM or CDM ratings, Diodes Incorporated confirms all devices in this family meet ≥2kV HBM per JESD22-A114, verified during qualification testing and documented in their quality assurance framework.

Can DMN34D0U-7 be used as a high-side switch with 3.3V gate drive?

No-DMN34D0U-7 is an N-channel MOSFET and cannot function as a high-side switch without a gate voltage exceeding the source potential. For high-side switching at 3.3V, a P-channel device (e.g., DMN2016LFG-7) or N-channel with charge-pump gate driver is required.

What is the typical body diode forward voltage and its relevance in flyback applications?

The DMN34D0U-7 body diode exhibits V_SD = 0.7V (typical) at I_S = 0.29A and T_J = 25°C. In flyback or inductive load circuits, this diode provides the freewheeling path during switch-off; its low forward voltage reduces energy loss compared to external Schottky diodes in low-current (<0.3A) applications.

DMN34D0U-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.4 nC @ 4.5 V

Vgs (Max):: 8V

Input Capacitance (Ciss) (Max) @ Vds:: 24 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 440mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN34D0U-7 FAQ

1.How can I place an order for DMN34D0U-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN34D0U-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN34D0U-7 reliable?

The price and inventory of DMN34D0U-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN34D0U-7 is usually 5 days.

3.What payment methods are accepted for DMN34D0U-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN34D0U-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN34D0U-7?

DMN34D0U-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN34D0U-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN34D0U-7?

For technical support, including DMN34D0U-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN34D0U-7 requirements.

6.How does Aetrix verify that DMN34D0U-7 is sourced from the original manufacturer or authorized distributors?

All DMN34D0U-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN34D0U-7 meets industry standards.

7.What is the process for return or replacement of DMN34D0U-7?

All DMN34D0U-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN34D0U-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN34D0U-7 part is unused and in its original packaging.

Return procedure for DMN34D0U-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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