Diodes Incorporated DMN3730UFB4-7B
- Part No.:
- DMN3730UFB4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
DMN3730UFB4-7B.pdf
- Description:
- MOSFET N-CH 30V 750MA 3DFN
- Quantity:
- Payment:

- Shipping:

Inventory:7,016
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN3730UFB4-7B from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in an X2-DFN1006-3 package, featuring 460mΩ RDS(on) at VGS = 4.5V, 0.91A continuous drain current, and AEC-Q101 qualification for automotive-grade reliability-used as a low-voltage load switch in portable power management circuits.
For engineers reviewing the DMN3730UFB4-7B datasheet, DMN3730UFB4-7B pinout, DMN3730UFB4-7B application, or DMN3730UFB4-7B equivalent, key selection criteria include ultra-low profile (0.4mm height), gate-threshold compatibility with battery-level drive (VGS(th) = 0.45–0.95V), and ESD-protected gate (2kV HBM).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(on) while preserving fast switching performance (tD(on) = 3.5ns, tD(off) = 38ns) and low gate charge (Qg = 1.6nC). Its body diode exhibits VSD = 0.7–1.2V at IS = 300mA, supporting bidirectional conduction in compact DC-DC and load-switch topologies.
The device operates across –55°C to +150°C junction temperature, with thermal resistance RθJA = 180°C/W on FR4 PCB (min pad layout), and is rated for ±8V gate-source voltage-enabling robust operation under transient conditions in space-constrained battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - supports input rails up to 28V nominal without breakdown risk |
| RDS(on) | 460mΩ @ VGS=4.5V - enables <100mW conduction loss at 0.7A load current |
| ID (continuous) | 0.91A @ TA=+25°C - sufficient for USB-powered peripherals and sensor node power gating |
| VGS(th) | 0.45–0.95V - ensures turn-on with single-cell Li-ion (3.0–3.6V) or coin-cell (3V) supply |
| Qg | 1.6nC - reduces gate-drive power and enables efficient PWM control at >1MHz |
| ESD Rating | 2kV HBM - protects against handling-induced gate damage during SMT assembly |
| TJ Range | –55°C to +150°C - qualified for under-hood automotive and industrial edge-node environments |
Pinout & Package
Package: X2-DFN1006-3 - 1.0mm × 0.6mm footprint, 0.4mm profile, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Common return path for load current; electrically tied to exposed thermal pad |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <3µA leakage; protected by integrated 2kV ESD diode |
| Pin 3 (Drain) | Power output (D) | Switched high-side or low-side output node; connects to load or supply rail |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.4mm height enables integration into <1mm-thick wearable and hearing aid PCBs |
| Small footprint | 0.6mm² area-10× smaller than SOT-23-reduces board real estate in multi-rail PMICs |
| Low VGS(th) | Turns on fully with 3V logic or single Li-ion cell, eliminating need for gate boosters |
| AEC-Q101 qualified | Validated for automotive load-switch applications including infotainment power sequencing |
| Green construction | Halogen- and antimony-free, RoHS-compliant molding compound (UL 94V-0 rated) |
Applications
| Smartphone Power Sequencing | USB-C Port Protection |
|---|---|
Use Scenario: Controlled power-up of camera module and display backlight after system boot. IC Role / Device Role / Timing Role: Low-side load switch enabling precise enable timing and inrush current limiting. Use Value: Prevents brown-out during simultaneous rail activation; RDS(on) < 500mΩ limits voltage drop to <450mV at 0.9A. | Use Scenario: Overcurrent and reverse-polarity protection for USB-C VBUS line in portable accessories. IC Role / Device Role / Timing Role: High-side switch controlled by USB PD controller to isolate faulty downstream devices. Use Value: Fast turn-off (tD(off) = 38ns) enables rapid fault response; 30V rating covers USB PD 20V max. |
| Automotive Cabin Sensor Node | Wireless Earbud Battery Management |
Use Scenario: Power gating of BLE transceiver and MEMS microphone in parked-state low-power mode. IC Role / Device Role / Timing Role: Always-on load switch with sub-1µA IDSS leakage minimizing quiescent drain. Use Value: IDSS ≤ 1µA extends battery life over months; AEC-Q101 rating ensures reliability in cabin temperature extremes. | Use Scenario: Isolating charging IC from battery during sleep mode to prevent parasitic discharge. IC Role / Device Role / Timing Role: Bidirectional blocking switch leveraging integrated body diode for reverse-current prevention. Use Value: VSD = 0.7V ensures minimal forward drop during trickle-charge paths; 0.4mm profile fits inside earbud housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LFD-7 | RDS(on) = 25mΩ @ VGS=4.5V (10× lower), but larger X2-DFN2020-6 package (2.0mm × 2.0mm) | Higher current (3.5A) capability; unsuitable for ultra-thin designs where height <0.45mm is mandatory | Select when higher efficiency at >1A loads outweighs board area constraints |
| AO3400A | RDS(on) = 44mΩ @ VGS=10V but 560mΩ @ VGS=2.5V; no AEC-Q101 qualification | Lower cost general-purpose switch; not recommended for automotive or long-life portable deployments | Choose only for non-automotive consumer electronics with 3.3V GPIO control and relaxed reliability requirements |
Compared with DMN3730UFB4-7B, DMN3025LFD-7 delivers superior conduction efficiency at higher currents but sacrifices miniaturization, while AO3400A lacks automotive qualification and exhibits poorer low-VGS performance-making DMN3730UFB4-7B optimal for space- and reliability-critical 3V–4.5V battery-switching roles.
Availability
DMN3730UFB4-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port protection, and automotive cabin sensor node applications requiring stable component supply and long-term lifecycle support.
Supply support for DMN3730UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN3730UFB4-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained battery-powered devices requiring AEC-Q101 reliability and direct battery-level gate drive.
FAQ
What is the maximum continuous drain current for DMN3730UFB4-7B at +70°C ambient?
The maximum continuous drain current is 0.73A at TA = +70°C with surface mounting on a minimum recommended FR4 pad layout in still air. This derating reflects thermal limitations due to RθJA = 258°C/W under those conditions, ensuring safe junction temperature below 150°C.
Does DMN3730UFB4-7B support 1.8V logic-level gate drive?
Yes-its VGS(th) range of 0.45–0.95V and RDS(on) = 730mΩ at VGS = 1.8V (ID = 75mA) enables functional switching with 1.8V GPIO, though conduction loss increases significantly versus 4.5V drive; design verification at target load current is recommended.
Is the exposed thermal pad electrically connected internally?
Yes-the exposed pad (visible on bottom view) is internally connected to the Source terminal (Pin 1). It must be soldered to a PCB copper pour for both thermal dissipation and electrical continuity; floating the pad degrades RθJA and may cause malfunction.
What is the gate-to-source leakage current specification?
IGSS is specified as ≤3µA at VGS = ±8V and VDS = 0V. This low leakage ensures minimal standby power draw in always-on load-switch configurations and supports reliable operation in low-quiescent-current battery systems.
DMN3730UFB4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.6 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 64.3 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 470mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-3
DMN3730UFB4-7B FAQ
1.How can I place an order for DMN3730UFB4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3730UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3730UFB4-7B reliable?
The price and inventory of DMN3730UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3730UFB4-7B is usually 5 days.
3.What payment methods are accepted for DMN3730UFB4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3730UFB4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3730UFB4-7B?
DMN3730UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3730UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3730UFB4-7B?
For technical support, including DMN3730UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3730UFB4-7B requirements.
6.How does Aetrix verify that DMN3730UFB4-7B is sourced from the original manufacturer or authorized distributors?
All DMN3730UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3730UFB4-7B meets industry standards.
7.What is the process for return or replacement of DMN3730UFB4-7B?
All DMN3730UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN3730UFB4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3730UFB4-7B part is unused and in its original packaging.
Return procedure for DMN3730UFB4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3730UFB4-7B Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

