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Diodes Incorporated DMN3730UFB4-7B

Part No.:
DMN3730UFB4-7B
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
3-XFDFN
Datasheet:
AetrixDMN3730UFB4-7B.pdf
Description:
MOSFET N-CH 30V 750MA 3DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,016

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Product details

Overview

DMN3730UFB4-7B from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in an X2-DFN1006-3 package, featuring 460mΩ RDS(on) at VGS = 4.5V, 0.91A continuous drain current, and AEC-Q101 qualification for automotive-grade reliability-used as a low-voltage load switch in portable power management circuits.

For engineers reviewing the DMN3730UFB4-7B datasheet, DMN3730UFB4-7B pinout, DMN3730UFB4-7B application, or DMN3730UFB4-7B equivalent, key selection criteria include ultra-low profile (0.4mm height), gate-threshold compatibility with battery-level drive (VGS(th) = 0.45–0.95V), and ESD-protected gate (2kV HBM).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(on) while preserving fast switching performance (tD(on) = 3.5ns, tD(off) = 38ns) and low gate charge (Qg = 1.6nC). Its body diode exhibits VSD = 0.7–1.2V at IS = 300mA, supporting bidirectional conduction in compact DC-DC and load-switch topologies.

The device operates across –55°C to +150°C junction temperature, with thermal resistance RθJA = 180°C/W on FR4 PCB (min pad layout), and is rated for ±8V gate-source voltage-enabling robust operation under transient conditions in space-constrained battery-powered systems.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30V - supports input rails up to 28V nominal without breakdown risk
RDS(on)460mΩ @ VGS=4.5V - enables <100mW conduction loss at 0.7A load current
ID (continuous)0.91A @ TA=+25°C - sufficient for USB-powered peripherals and sensor node power gating
VGS(th)0.45–0.95V - ensures turn-on with single-cell Li-ion (3.0–3.6V) or coin-cell (3V) supply
Qg1.6nC - reduces gate-drive power and enables efficient PWM control at >1MHz
ESD Rating2kV HBM - protects against handling-induced gate damage during SMT assembly
TJ Range–55°C to +150°C - qualified for under-hood automotive and industrial edge-node environments

Pinout & Package

Package: X2-DFN1006-3 - 1.0mm × 0.6mm footprint, 0.4mm profile, NiPdAu-plated copper leadframe, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Common return path for load current; electrically tied to exposed thermal pad
Pin 2 (Gate)Control input (G)High-impedance MOS gate requiring <3µA leakage; protected by integrated 2kV ESD diode
Pin 3 (Drain)Power output (D)Switched high-side or low-side output node; connects to load or supply rail

Key Features

FeatureDesign Value
Ultra-low profile0.4mm height enables integration into <1mm-thick wearable and hearing aid PCBs
Small footprint0.6mm² area-10× smaller than SOT-23-reduces board real estate in multi-rail PMICs
Low VGS(th)Turns on fully with 3V logic or single Li-ion cell, eliminating need for gate boosters
AEC-Q101 qualifiedValidated for automotive load-switch applications including infotainment power sequencing
Green constructionHalogen- and antimony-free, RoHS-compliant molding compound (UL 94V-0 rated)

Applications

Smartphone Power SequencingUSB-C Port Protection

Use Scenario: Controlled power-up of camera module and display backlight after system boot.

IC Role / Device Role / Timing Role: Low-side load switch enabling precise enable timing and inrush current limiting.

Use Value: Prevents brown-out during simultaneous rail activation; RDS(on) < 500mΩ limits voltage drop to <450mV at 0.9A.

Use Scenario: Overcurrent and reverse-polarity protection for USB-C VBUS line in portable accessories.

IC Role / Device Role / Timing Role: High-side switch controlled by USB PD controller to isolate faulty downstream devices.

Use Value: Fast turn-off (tD(off) = 38ns) enables rapid fault response; 30V rating covers USB PD 20V max.

Automotive Cabin Sensor NodeWireless Earbud Battery Management

Use Scenario: Power gating of BLE transceiver and MEMS microphone in parked-state low-power mode.

IC Role / Device Role / Timing Role: Always-on load switch with sub-1µA IDSS leakage minimizing quiescent drain.

Use Value: IDSS ≤ 1µA extends battery life over months; AEC-Q101 rating ensures reliability in cabin temperature extremes.

Use Scenario: Isolating charging IC from battery during sleep mode to prevent parasitic discharge.

IC Role / Device Role / Timing Role: Bidirectional blocking switch leveraging integrated body diode for reverse-current prevention.

Use Value: VSD = 0.7V ensures minimal forward drop during trickle-charge paths; 0.4mm profile fits inside earbud housing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3025LFD-7RDS(on) = 25mΩ @ VGS=4.5V (10× lower), but larger X2-DFN2020-6 package (2.0mm × 2.0mm)Higher current (3.5A) capability; unsuitable for ultra-thin designs where height <0.45mm is mandatorySelect when higher efficiency at >1A loads outweighs board area constraints
AO3400ARDS(on) = 44mΩ @ VGS=10V but 560mΩ @ VGS=2.5V; no AEC-Q101 qualificationLower cost general-purpose switch; not recommended for automotive or long-life portable deploymentsChoose only for non-automotive consumer electronics with 3.3V GPIO control and relaxed reliability requirements

Compared with DMN3730UFB4-7B, DMN3025LFD-7 delivers superior conduction efficiency at higher currents but sacrifices miniaturization, while AO3400A lacks automotive qualification and exhibits poorer low-VGS performance-making DMN3730UFB4-7B optimal for space- and reliability-critical 3V–4.5V battery-switching roles.

Availability

DMN3730UFB4-7B is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port protection, and automotive cabin sensor node applications requiring stable component supply and long-term lifecycle support.

Supply support for DMN3730UFB4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DMN3730UFB4-7B belongs to Diodes' X2-DFN ultra-miniature MOSFET product line, engineered specifically for space-constrained battery-powered devices requiring AEC-Q101 reliability and direct battery-level gate drive.

FAQ

What is the maximum continuous drain current for DMN3730UFB4-7B at +70°C ambient?

The maximum continuous drain current is 0.73A at TA = +70°C with surface mounting on a minimum recommended FR4 pad layout in still air. This derating reflects thermal limitations due to RθJA = 258°C/W under those conditions, ensuring safe junction temperature below 150°C.

Does DMN3730UFB4-7B support 1.8V logic-level gate drive?

Yes-its VGS(th) range of 0.45–0.95V and RDS(on) = 730mΩ at VGS = 1.8V (ID = 75mA) enables functional switching with 1.8V GPIO, though conduction loss increases significantly versus 4.5V drive; design verification at target load current is recommended.

Is the exposed thermal pad electrically connected internally?

Yes-the exposed pad (visible on bottom view) is internally connected to the Source terminal (Pin 1). It must be soldered to a PCB copper pour for both thermal dissipation and electrical continuity; floating the pad degrades RθJA and may cause malfunction.

What is the gate-to-source leakage current specification?

IGSS is specified as ≤3µA at VGS = ±8V and VDS = 0V. This low leakage ensures minimal standby power draw in always-on load-switch configurations and supports reliable operation in low-quiescent-current battery systems.

DMN3730UFB4-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-XFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.6 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
64.3 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
470mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
X2-DFN1006-3

DMN3730UFB4-7B FAQ

1.How can I place an order for DMN3730UFB4-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3730UFB4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3730UFB4-7B reliable?

The price and inventory of DMN3730UFB4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3730UFB4-7B is usually 5 days.

3.What payment methods are accepted for DMN3730UFB4-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3730UFB4-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3730UFB4-7B?

DMN3730UFB4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3730UFB4-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3730UFB4-7B?

For technical support, including DMN3730UFB4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3730UFB4-7B requirements.

6.How does Aetrix verify that DMN3730UFB4-7B is sourced from the original manufacturer or authorized distributors?

All DMN3730UFB4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3730UFB4-7B meets industry standards.

7.What is the process for return or replacement of DMN3730UFB4-7B?

All DMN3730UFB4-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN3730UFB4-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3730UFB4-7B part is unused and in its original packaging.

Return procedure for DMN3730UFB4-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN3730UFB4-7B Tags

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