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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN3732U-7

Name: DMN3732U-7
Brand: Diodes Incorporated
SKU: DMN3732U-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN3732U-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN3732U-7.pdf

Description:: MOSFET BVDSS: 25V~30V SOT23 T&R

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Product details

Overview

DMN3732U-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SOT23 package, optimized for low-voltage load switching with R_DS(ON) = 460 mΩ @ V_GS = 4.5V, I_D = 1 A, and gate threshold voltage of 0.45–0.95 V. It serves as a compact, ESD-protected power switch in portable electronics battery management and USB power path control.

For engineers reviewing the DMN3732U-7 datasheet, DMN3732U-7 pinout, DMN3732U-7 application, or DMN3732U-7 equivalent, key selection criteria include low gate threshold compatibility with 1.8–2.5 V logic, fast switching (t_R = 15.9 ns), thermal resistance (R_θJA = 192 °C/W on 1-in² copper), and RoHS-compliant green packaging.

Technical Context

This MOSFET employs planar trench-enhanced silicon technology to achieve sub-1 V gate threshold while maintaining robust 30 V BVDSS and low dynamic capacitance (C_iss = 40.8 pF, C_rss = 4.6 pF). Its R_DS(ON) remains stable across -55°C to +150°C junction temperature, with normalized variation ≤1.8× at T_J = 150°C.

The device features integrated body diode with V_SD = 0.8–1.2 V at I_S = 300 mA and reverse recovery charge Q_RR = 25 nC, enabling efficient synchronous rectification and bidirectional current handling in compact DC-DC and LDO enable circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports input rails up to 28 V DC without breakdown in portable power systems.
R_DS(ON) @ V_GS = 4.5 V	460 mΩ - Enables ≤460 mW conduction loss at 1 A, critical for thermally constrained SOT23 layouts.
V_GS(TH)	0.45–0.95 V - Fully enhances with 1.2 V logic, compatible with ultra-low-voltage microcontrollers and PMICs.
Q_g	0.9 nC - Minimizes gate drive energy and switching losses in high-frequency (>1 MHz) load switching.
R_θJA (1-in² copper)	192 °C/W - Limits junction rise to <100°C at 0.65 W dissipation, enabling continuous operation in ambient ≤50°C.
I_D (T_A = 25°C)	1 A - Rated for sustained current in handheld device battery switches and USB port protection.
C_oss	7.6 pF - Reduces Miller effect and improves turn-off stability in high-side configurations.

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.4 mm × 1.3 mm × 1.0 mm), UL 94V-0 rated, matte tin-plated leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path and body diode cathode	Connected to system ground or low-side reference; enables bidirectional current flow via intrinsic diode.
2 (Gate)	Control terminal for channel modulation	Accepts 0–8 V logic; low 0.9 nC Q_g allows direct drive from GPIO without buffer.
3 (Drain)	Power output node and body diode anode	Routes switched load current; withstands 30 V transients and supports pulsed 2.4 A peak loads.

Key Features

Feature	Design Value
Low gate threshold voltage	V_GS(TH) down to 0.45 V ensures full enhancement with 1.2 V supply rails, eliminating need for level shifters.
ESD-protected gate	HBM rating ≥2 kV per JESD22-A114 - prevents damage during board assembly and field handling.
Fast switching speed	t_R = 15.9 ns and t_F = 20.0 ns reduce transition losses in PWM-controlled power paths.
Green packaging	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and consumer eco-regulations.
Thermal performance	R_θJA = 192 °C/W on 1-in² copper enables 0.65 W continuous dissipation without heatsink in space-constrained designs.

Applications

Smartphone Battery Switch

USB-C Power Delivery Switch

Use Scenario: Isolates main battery from USB-C port during charging to prevent backfeed and enable dual-path power routing.

IC Role / Device Role / Timing Role: Low-side load switch controlling battery-to-port current path with 1.8 V GPIO enable signal.

Use Value: 0.45 V V_GS(TH) ensures reliable turn-on with PMIC's 1.8 V enable rail; 460 mΩ R_DS(ON) limits voltage drop to <460 mV at 1 A.

Use Scenario: Enables/disables 5 V VBUS path between USB-C controller and downstream peripherals during role swap or fault events.

IC Role / Device Role / Timing Role: High-speed power gate with <21 ns fall time, synchronized to PD controller interrupt signals.

Use Value: 0.9 nC Q_g and 4.6 pF C_rss minimize propagation delay and ensure clean 100 µs response to PD policy engine commands.

Wireless Earbud Charging Case

IoT Sensor Node Power Management

Use Scenario: Controls charging current from case battery to earbud PCB during magnetic docking, requiring ultra-low quiescent current and logic-level drive.

IC Role / Device Role / Timing Role: Bidirectional load switch leveraging intrinsic body diode for reverse current blocking during undocking.

Use Value: V_SD = 0.8 V at 300 mA ensures minimal forward drop during reverse conduction; 0.009 g weight reduces mechanical stress on flex cables.

Use Scenario: Powers BLE SoC and environmental sensors only during active measurement cycles to extend coin-cell battery life beyond 5 years.

IC Role / Device Role / Timing Role: Precision on/off switch with sub-1 µA I_DSS leakage preserving battery voltage during 30 s sleep intervals.

Use Value: 1 µA max I_DSS at 30 V reduces standby drain to <0.1 µA per switch, critical for multi-year battery operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(ON) = 25 mΩ @ V_GS = 4.5 V, but in larger SOT26 package; higher gate charge (2.5 nC).	Requires more PCB area and stronger gate driver; suited for higher-current (3 A) applications where thermal headroom exists.	Select when lower conduction loss outweighs size and drive constraints.
AO3400	V_GS(TH) = 0.7–1.4 V; R_DS(ON) = 40 mΩ @ 4.5 V but not specified below 2.5 V; no published ESD rating.	Lacks guaranteed 1.8 V logic compatibility and documented HBM protection, increasing risk in automated assembly.	Prefer only in cost-sensitive, non-critical consumer applications with verified 2.5 V+ drive capability.

Compared with DMN3732U-7, DMN3025LSD-13 delivers lower R_DS(ON) at the expense of footprint and gate drive strength, while AO3400 trades threshold certainty and ESD robustness for marginal R_DS(ON) improvement-making DMN3732U-7 optimal for space- and logic-voltage-constrained portable designs.

Availability

DMN3732U-7 is available at Aetrix Electronics and suitable for smartphone battery isolation, USB-C power path control, wireless earbud charging cases, and IoT sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for DMN3732U-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.

This MOSFET belongs to Diodes' "Ultra-Low Threshold Logic-Level" power switch product line, engineered specifically for battery-powered devices operating at 1.2–2.5 V control voltages and demanding high reliability in miniaturized form factors.

FAQ

What is the maximum continuous drain current for DMN3732U-7 at 70°C ambient?

The DMN3732U-7 supports 0.8 A continuous drain current at T_A = +70°C with 1-inch square copper pad (R_θJA = 192 °C/W). This derating reflects thermal limits under realistic PCB conditions-not just die capability-and assumes no airflow or forced cooling.

Does DMN3732U-7 have a specified avalanche rating?

No. The datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). The device is rated for 30 V V_DSS and 2.4 A pulsed drain current (10 µs, 1% duty), but operation beyond safe operating area boundaries requires external clamping or derating per Figure 12 SOA curves.

Can DMN3732U-7 be used in high-side switch configuration?

Yes, but requires gate drive ≥ V_IN + V_GS(TH). With V_GS(TH) up to 0.95 V, a 30 V rail demands ≥31 V gate voltage-typically implemented with charge pump or bootstrap circuitry. Its SOT23 pinout (G-S-D) is standard for high-side use, but thermal limits remain unchanged.

Is the body diode in DMN3732U-7 suitable for reverse current blocking in USB-C DRP applications?

Yes. The intrinsic body diode has V_SD = 0.8–1.2 V at 300 mA and t_RR = 59 ns, enabling effective reverse current blocking during USB-C dual-role port transitions. Its Q_RR = 25 nC minimizes voltage overshoot during commutation, supporting clean hot-swap behavior.

DMN3732U-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 460mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id:: 950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.9 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 40.8 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 420mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN3732U-7 FAQ

1.How can I place an order for DMN3732U-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN3732U-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN3732U-7 reliable?

The price and inventory of DMN3732U-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3732U-7 is usually 5 days.

3.What payment methods are accepted for DMN3732U-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3732U-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN3732U-7?

DMN3732U-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN3732U-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN3732U-7?

For technical support, including DMN3732U-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3732U-7 requirements.

6.How does Aetrix verify that DMN3732U-7 is sourced from the original manufacturer or authorized distributors?

All DMN3732U-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3732U-7 meets industry standards.

7.What is the process for return or replacement of DMN3732U-7?

All DMN3732U-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3732U-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN3732U-7 part is unused and in its original packaging.

Return procedure for DMN3732U-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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