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Diodes Incorporated DMN3732UVT-13
- Part No.:
- DMN3732UVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3732UVT-13.pdf
- Description:
- MOSFET 2N-CH 30V 1.1A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:5,892
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Product details
Overview
DMN3732UVT-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 460 mΩ RDS(ON) at VGS = 4.5V and 1.1A ID (TA = +25°C), optimized for high-efficiency DC-DC converters and backlighting power switches.
For engineers reviewing the DMN3732UVT-13 datasheet, DMN3732UVT-13 pinout, DMN3732UVT-13 application, or DMN3732UVT-13 equivalent, key selection criteria include low-voltage gate drive capability (VGS(TH) = 0.45–0.95V), dual-channel integration in 2.9 × 1.6 mm footprint, and thermal resistance of 150 °C/W under enhanced PCB layout.
Technical Context
This dual MOSFET integrates two independent N-channel silicon devices sharing no internal connection-each channel features discrete source, drain, and gate terminals. Its low RDS(ON) at 2.5V gate drive (560 mΩ) enables operation with modern low-voltage controllers and microcontroller GPIOs.
Dynamic parameters include Ciss = 40.8 pF, Qg = 0.9 nC (VGS = 4.5V), and fast switching times (tr = 15.9 ns, tf = 20.0 ns), supporting >1 MHz DC-DC operation while maintaining low gate drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage per channel; supports 24V rail and automotive 12V systems with margin. |
| RDS(ON) @ VGS = 4.5V | 460 mΩ - Measured at 200 mA; defines conduction loss in low-current power switches like LED drivers. |
| RDS(ON) @ VGS = 2.5V | 560 mΩ - Verified at 100 mA; enables direct drive from 2.5V logic without level-shifting. |
| ID (TA = +25°C) | 1.1 A - Continuous drain current per channel with standard FR-4 PCB and 1-inch² copper pad. |
| Ciss | 40.8 pF - Input capacitance at VDS = 25V; determines gate drive strength requirement and switching speed limit. |
| Qg | 0.9 nC - Total gate charge at VGS = 4.5V, VDS = 15V, ID = 1A; sets minimum gate driver output current for <20 ns rise time. |
| RθJA (enhanced layout) | 150 °C/W - Thermal resistance with 1-inch² copper; allows 0.8 W power dissipation before exceeding 150°C junction temperature. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.90 × 1.60 × 0.60 mm), RoHS-compliant, halogen-free, matte tin-plated leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-side or low-side switching node; electrically isolated from D2; requires separate PCB routing. |
| 2 (S1) | Source of Channel 1 | Reference node for Q1; may be tied to ground (low-side) or floating (high-side); not internally connected to S2. |
| 3 (G1) | Gate of Channel 1 | Control input for Q1; driven independently; threshold voltage range 0.45–0.95 V enables 1.8V/2.5V logic compatibility. |
| 4 (D2) | Drain of Channel 2 | Independent switching node for second load; no internal connection to D1; supports dual-path power control. |
| 5 (S2) | Source of Channel 2 | Reference node for Q2; may be configured separately from S1 (e.g., one grounded, one floating). |
| 6 (G2) | Gate of Channel 2 | Independent control input; identical electrical characteristics to G1; supports asynchronous or synchronized dual-channel operation. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 560 mΩ enables direct interface with 2.5V microcontrollers and PMICs without gate boosting. |
| Ultra-low input capacitance | Ciss = 40.8 pF reduces gate drive power and improves high-frequency efficiency in DC-DC stages. |
| Fast switching transitions | tr = 15.9 ns and tf = 20.0 ns support >1 MHz operation with minimal overlap loss. |
| Thermally robust layout | RθJA = 150 °C/W with 1-inch² copper allows 0.8 W continuous dissipation in space-constrained designs. |
| Green, lead-free construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb); compliant with RoHS 3 and J-STD-020 Level 1. |
Applications
| LED Backlight Control | USB-C Power Path Switching |
|---|---|
|
Use Scenario: Driving parallel white LED strings in thin-profile LCD displays using PWM dimming at 1–5 kHz. IC Role / Device Role: Low-side constant-current switch; each channel controls one LED string with independent enable. Use Value: 460 mΩ RDS(ON) at 4.5V ensures <200 mW conduction loss per string at 1A, minimizing thermal impact on display bezel. |
Use Scenario: Dual-path 5V/20V power routing in portable USB-C PD sink devices with separate VBUS and accessory power rails. IC Role / Device Role: Independent high-side load switches; Q1 manages main VBUS path, Q2 controls auxiliary 5V rail. Use Value: 30V rating and 560 mΩ RDS(ON) at 2.5V gate drive allow direct control from USB-C controller GPIOs, eliminating external level shifters. |
| Industrial Sensor Power Gating | Low-Power DC-DC Synchronous Rectifier |
|
Use Scenario: Enabling/disabling 3.3V or 5V sensor sub-circuits in battery-powered IoT nodes during sleep mode. IC Role / Device Role: Dual low-leakage power switch; Q1 gates main sensor supply, Q2 isolates analog reference circuitry. Use Value: <1 µA IDSS and <10 µA IGSS ensure <100 nA total off-state leakage per channel, extending multi-year battery life. |
Use Scenario: Secondary-side synchronous rectification in 5V-output flyback or buck-boost converters operating at 500 kHz–1 MHz. IC Role / Device Role: Two-phase rectifier pair; each channel replaces a Schottky diode in interleaved or dual-output topologies. Use Value: 0.9 nC Qg and 15.9 ns tr minimize gate drive loss and switching transition time, improving efficiency by ≥2% vs. diode rectification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3732UVTQ-13 | Automotive-grade variant (AEC-Q101 qualified); identical electrical specs but qualified for -40°C to +125°C TA operation. | Required for automotive infotainment power management; not necessary for commercial-grade consumer or industrial use. | Select when operating ambient exceeds +85°C or automotive qualification is mandated. |
| DMN3029LSD-13 | Single-channel 30V MOSFET (RDS(ON) = 29 mΩ @ 10V); higher current (4.5A), larger SO-8 package; no dual-channel integration. | Suitable for higher-power single-load switching but lacks space-saving dual-channel functionality. | Choose only if >1.1A per channel or SO-8 mounting is preferred; not a drop-in replacement. |
Compared with DMN3732UVT-13, the DMN3732UVTQ-13 adds automotive qualification without electrical trade-offs, while the DMN3029LSD-13 sacrifices dual-channel integration for lower RDS(ON) and higher current-making it unsuitable for footprint- or channel-count-constrained designs.
Availability
DMN3732UVT-13 is available at Aetrix Electronics and suitable for LED backlight control, USB-C power path switching, and industrial sensor power gating requiring stable component supply across production volumes.
Supply support for DMN3732UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions.
The DMN3732UVT belongs to Diodes' low-voltage logic-level MOSFET product line, engineered for space-constrained, battery-sensitive applications where dual-channel integration and 2.5V gate drive are essential.
FAQ
What is the maximum safe operating junction temperature for DMN3732UVT-13?
The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this temperature risks permanent device degradation. Derating is required above +70°C ambient due to reduced ID (0.9 A at TA = +70°C) and rising RDS(ON).
Can DMN3732UVT-13 be used in high-side switching configurations?
Yes-each channel operates independently with isolated source terminals. For high-side use, connect S1/S2 to the positive rail and drive G1/G2 referenced to that rail; gate drive must exceed VGS(TH) relative to source, requiring level-shifted or floating gate drive circuitry.
Is the TSOT26 package thermally enhanced compared to standard SOT-23?
Yes-the TSOT26 uses an exposed thermal pad design (visible in the package outline) and achieves RθJA = 150 °C/W with 1-inch² copper, versus ~250 °C/W for standard SOT-23. This 40% improvement enables higher power handling in the same 2.9 × 1.6 mm footprint.
Does DMN3732UVT-13 include integrated ESD protection?
No-this MOSFET does not integrate ESD protection circuitry. The datasheet specifies ±8V gate-source voltage rating and recommends external TVS diodes or RC filters on gate lines in environments with >2 kV HBM risk, especially in handheld or connector-facing applications.
DMN3732UVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Rds On (Max) @ Id, Vgs:
- 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40.8pF @ 25V
- Power - Max:
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3732UVT-13 FAQ
1.How can I place an order for DMN3732UVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3732UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3732UVT-13 reliable?
The price and inventory of DMN3732UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3732UVT-13 is usually 5 days.
3.What payment methods are accepted for DMN3732UVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3732UVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3732UVT-13?
DMN3732UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3732UVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3732UVT-13?
For technical support, including DMN3732UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3732UVT-13 requirements.
6.How does Aetrix verify that DMN3732UVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN3732UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3732UVT-13 meets industry standards.
7.What is the process for return or replacement of DMN3732UVT-13?
All DMN3732UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3732UVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3732UVT-13 part is unused and in its original packaging.
Return procedure for DMN3732UVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3732UVT-13 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
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UM6K33NTN
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DMG6602SVT-7
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