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Diodes Incorporated DMN3732UVT-7
- Part No.:
- DMN3732UVT-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3732UVT-7.pdf
- Description:
- MOSFET 2N-CH 30V 1.1A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:9,992
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Product details
Overview
DMN3732UVT-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 460 mΩ RDS(ON) @ VGS = 4.5V, and 1.1A continuous drain current at TA = +25°C. It serves as a compact, low-RDS(ON) power switch in space-constrained DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMN3732UVT-7 datasheet, DMN3732UVT-7 pinout, DMN3732UVT-7 application, or DMN3732UVT-7 equivalent, key selection criteria include its dual-channel layout, low-threshold gate drive (VGS(TH) = 0.45–0.95V), thermal resistance (RθJA = 150°C/W with copper plate), and RoHS-compliant green packaging.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel has dedicated source, drain, and gate terminals. Its low input capacitance (Ciss = 40.8 pF) and fast switching (tD(ON) = 1.1 ns, tF = 20.0 ns) support high-frequency operation in synchronous buck stages.
The device operates across –55°C to +150°C junction temperature, with RDS(ON) normalized to ≤1.3× typical at TJ = 150°C. Gate threshold voltage shifts predictably with temperature (0.45–0.95V range), enabling stable logic-level drive in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche conduction; suitable for 24V rail switching and 12V automotive auxiliary loads. |
| RDS(ON) | 460 mΩ @ VGS = 4.5V - Enables <1.1A continuous load with <0.5W conduction loss at room temperature on minimal PCB copper. |
| ID (continuous) | 1.1 A @ TA = +25°C - Validated under standard FR-4 2oz copper layout; derates to 0.9A at +70°C ambient. |
| Ciss | 40.8 pF - Low input capacitance reduces gate drive power and improves PWM efficiency above 500 kHz. |
| Qg | 0.9 nC @ VGS = 4.5V - Enables fast turn-on with low-current drivers (e.g., microcontroller GPIO) without external buffer. |
| RθJA | 150 °C/W - Achieved with 1-inch² copper pad; allows 0.8W power dissipation before exceeding 150°C junction limit. |
| VGS(TH) | 0.45–0.95 V - Ensures reliable turn-on with 1.8V/2.5V/3.3V logic outputs, eliminating need for level-shifting circuitry. |
Pinout & Package
TSOT26 surface-mount package (2.9 × 1.6 × 0.6 mm), molded green compound, matte tin-plated leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Q1 | High-side or low-side switching node for first MOSFET; electrically isolated from D2. |
| 2 (S1) | Source of Q1 | Return path for Q1 current; tied to local ground or switch-node reference depending on topology. |
| 3 (G1) | Gate of Q1 | Control input for Q1; requires <0.9 nC charge for full enhancement; sensitive to ESD. |
| 4 (D2) | Drain of Q2 | Independent drain terminal for second MOSFET; supports dual-switch configurations like half-bridge legs. |
| 5 (S2) | Source of Q2 | Separate return path for Q2; enables floating-source topologies or independent current sensing per channel. |
| 6 (G2) | Gate of Q2 | Independent control input; identical electrical characteristics to G1-no internal coupling or matching guarantee. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5V drive | 560 mΩ - Supports direct interface with 2.5V microcontrollers and low-voltage PMICs without gate boosting. |
| Low Ciss / Coss ratio | 40.8 pF / 7.6 pF - Reduces Miller effect and improves stability in high-dV/dt environments like motor drives. |
| Fast switching with low Qgd | 0.3 nC - Minimizes gate-drive energy loss and suppresses shoot-through risk in synchronous rectifiers. |
| Green, halogen-free construction | <900 ppm Br+Cl, <1000 ppm Sb - Complies with IPC-1752A material declaration requirements for automotive and industrial OEMs. |
| Thermal performance with minimal copper | RθJA = 252°C/W on standard layout - Allows functional operation in thermally restricted enclosures without heatsinks. |
Applications
| LED Backlighting | USB-C Power Delivery Switching |
|---|---|
|
Use Scenario: Driving parallel white LED strings in portable displays using PWM dimming at 1–5 kHz. IC Role / Device Role: Low-side constant-current switch controlling LED cathode return path. Use Value: 460 mΩ RDS(ON) limits conduction loss to <0.5W at 1.1A, enabling >92% efficiency in 3.3V-input boost+linear hybrid architectures. |
Use Scenario: Dual-path load switching for USB-C port power routing between host and peripheral modes. IC Role / Device Role: Independent high-side switches isolating VBUS paths in reversible connector applications. Use Value: Dual-channel TSOT26 footprint replaces two discrete SOT-23 MOSFETs, saving 35% board area while maintaining <1VGS turn-on compatibility with USB PD controllers. |
| DC-DC Synchronous Buck Converter | Industrial Sensor Node Power Management |
|
Use Scenario: High-frequency (1–2 MHz) buck regulator for FPGA core voltage (1.0–1.2V) in edge AI modules. IC Role / Device Role: Integrated high-side and low-side power switches replacing discrete dual-MOSFET solutions. Use Value: 0.9 nC total gate charge enables clean 2 MHz switching with 3.3V GPIO drive, reducing gate driver BOM count by one IC. |
Use Scenario: Battery-operated environmental sensor node requiring ultra-low quiescent current and wake-on-event capability. IC Role / Device Role: Dual-channel load switch enabling selective power gating of RF transceiver and ADC subsystems. Use Value: Sub-1 µA IDSS leakage ensures <10 µA system standby current, extending 2xAA battery life beyond 18 months at 10-second sampling intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3732UVTQ-7 | Automotive-grade variant (AEC-Q101 qualified); identical RDS(ON), VDSS, and pinout; enhanced HTOL and temperature cycling validation. | Required for automotive infotainment power rails and ADAS camera modules where qualification traceability is mandatory. | Select when ISO/TS 16949 production flow and PPAP documentation are contractually required. |
| AOB27222L | Single-channel 30V MOSFET in TSOP-6; RDS(ON) = 4.5 mΩ @ 10V (not logic-level); higher Qg = 12 nC; incompatible gate drive voltage range. | Only viable if redesigning to separate single-channel layout and adding gate drivers for 10V operation. | Not recommended for drop-in replacement; consider only if redesigning for higher current (>3A) and accepting larger footprint and higher drive complexity. |
Compared with DMN3732UVT-7, the DMN3732UVTQ-7 adds automotive qualification without altering electrical behavior, while AOB27222L demands gate drive redesign and offers no benefit in logic-level operation or dual-channel integration-making it unsuitable for space- or cost-sensitive consumer/industrial designs.
Availability
DMN3732UVT-7 is available at Aetrix Electronics and suitable for LED backlighting, USB-C power routing, and DC-DC synchronous buck converter designs requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMN3732UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.
The DMN3732UVT belongs to Diodes' logic-level dual MOSFET product line, engineered specifically for compact, high-efficiency power management in portable and battery-powered systems where gate drive voltage headroom is limited.
FAQ
What is the maximum safe operating junction temperature for DMN3732UVT-7?
The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of RDS(ON) and gate oxide integrity. Derating curves in Figure 7 confirm RDS(ON) remains within 1.3× nominal up to 150°C, supporting continuous use at rated current with proper thermal design.
Can DMN3732UVT-7 be used in a half-bridge configuration?
Yes-its dual independent channels allow implementation of a half-bridge: Q1 as high-side switch (D1 to VIN, S1 to SW node, G1 driven) and Q2 as low-side switch (D2 to SW node, S2 to GND, G2 driven). However, no internal bootstrap diode or level shifter is included; external gate drive isolation and timing control are required to prevent shoot-through.
Does DMN3732UVT-7 have integrated ESD protection?
No integrated ESD protection structure is specified in the datasheet. The device exhibits ±8V gate-source rating but relies on external TVS or RC filtering for robustness in handling-system environments. Layout best practices-short gate traces, local 100nF decoupling, and guard rings-are strongly recommended per Diodes' application note AN-4001.
Is the TSOT26 package compatible with standard reflow profiles?
Yes-the TSOT26 package is qualified for lead-free reflow per J-STD-020, Level 1 moisture sensitivity. Peak temperature must not exceed 260°C for ≤10 seconds, with ramp-up rate ≤3°C/s and cooling rate ≥1°C/s. Diodes recommends using the "Green" profile with preheat at 150°C for 90–120 seconds before ramping to peak.
DMN3732UVT-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Rds On (Max) @ Id, Vgs:
- 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40.8pF @ 25V
- Power - Max:
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3732UVT-7 FAQ
1.How can I place an order for DMN3732UVT-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3732UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3732UVT-7 reliable?
The price and inventory of DMN3732UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3732UVT-7 is usually 5 days.
3.What payment methods are accepted for DMN3732UVT-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3732UVT-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3732UVT-7?
DMN3732UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3732UVT-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3732UVT-7?
For technical support, including DMN3732UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3732UVT-7 requirements.
6.How does Aetrix verify that DMN3732UVT-7 is sourced from the original manufacturer or authorized distributors?
All DMN3732UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3732UVT-7 meets industry standards.
7.What is the process for return or replacement of DMN3732UVT-7?
All DMN3732UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3732UVT-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3732UVT-7 part is unused and in its original packaging.
Return procedure for DMN3732UVT-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3732UVT-7 Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
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2N7002DWH6327XTSA1
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2N7002BKS,115
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