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Diodes Incorporated DMN3732UVTQ-13
- Part No.:
- DMN3732UVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN3732UVTQ-13.pdf
- Description:
- MOSFET 2N-CH 30V 1.1A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:3,122
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Product details
Overview
DMN3732UVTQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in TSOT26 package, rated for 30V VDSS, 460mΩ RDS(ON) @ 4.5V VGS, and 1.1A continuous drain current at +25°C. It delivers low on-resistance with fast switching for compact DC-DC converters and LED backlighting circuits.
For engineers reviewing the DMN3732UVTQ datasheet, DMN3732UVTQ pinout, DMN3732UVTQ application, or DMN3732UVTQ equivalent, key selection criteria include dual-channel layout, AEC-Q101 qualification, 1.8V gate-threshold capability, and thermal resistance of 150°C/W under enhanced PCB layout.
Technical Context
This device integrates two independent N-channel MOSFETs in a single TSOT26 package with shared thermal path and isolated source terminals (S1/S2). Each channel operates with gate threshold voltage of 0.45–0.95V and supports logic-level drive down to 1.8V.
It features low input capacitance (Ciss = 40.8pF) and fast switching (tD(ON) = 1.1ns, tF = 20.0ns), enabling high-frequency operation in synchronous buck regulators and power-management ICs where body diode conduction and reverse recovery are minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 12V/24V rail protection and step-down conversion |
| RDS(ON) | 460mΩ @ VGS = 4.5V - Enables <1.1W conduction loss at 1.1A in space-constrained DC-DC stages |
| ID | 1.1A @ TA = +25°C - Sustains continuous load current in dual-path power switches |
| VGS(TH) | 0.45–0.95V - Ensures turn-on with low-voltage microcontroller GPIOs (1.8V–3.3V) |
| Ciss | 40.8pF - Reduces gate drive power and improves efficiency in >1MHz switching topologies |
| RθJA | 150°C/W - Requires only 1-inch² copper pad for full 0.8W power dissipation at ambient |
| Qg | 0.9nC - Low total gate charge enables fast edge rates with minimal driver stress |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9mm × 1.6mm × 0.6mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Q1 | Primary high-side or low-side switch node for first MOSFET channel |
| 2 (S1) | Source of Q1 | Independent source terminal; referenced to local ground or feedback node in half-bridge |
| 3 (G1) | Gate of Q1 | Logic-level control input requiring ≤0.95V threshold; decoupling capacitor recommended |
| 4 (D2) | Drain of Q2 | Second independent switching node-supports dual-phase or redundant load paths |
| 5 (S2) | Source of Q2 | Isolated source terminal enabling floating or differential configuration |
| 6 (G2) | Gate of Q2 | Separate gate control for independent timing, sequencing, or fault isolation |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables compact dual-switch implementation without external pairing or matching |
| AEC-Q101 qualified | Validated for automotive power management including infotainment and body electronics |
| Low RDS(ON) at 1.8V VGS | 730mΩ @ 75mA - supports battery-powered systems with weak gate drive |
| Fast switching with low Qgd | 0.3nC gate-drain charge - minimizes Miller-induced shoot-through risk in synchronous rectifiers |
| Green molding compound (UL 94V-0) | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) for eco-compliant industrial designs |
Applications
| LED Backlight Driver | Synchronous Buck Converter |
|---|---|
Use Scenario: Driving parallel white LED strings in automotive instrument clusters with PWM dimming. IC Role / Device Role / Timing Role: Dual low-side switch controlling cathode current paths with independent enable timing. Use Value: 460mΩ RDS(ON) limits I²R loss to <0.56W per channel at 1.1A, reducing thermal footprint in sealed enclosures. | Use Scenario: High-efficiency 5V-to-3.3V point-of-load regulator in industrial PLC modules. IC Role / Device Role / Timing Role: Integrated high-side and low-side switch pair replacing discrete FETs in integrated buck controller reference design. Use Value: 0.9nC total gate charge allows clean 2MHz switching with minimal gate driver overhead and reduced EMI. |
| Automotive Body Control Module | USB-C Power Delivery Switch |
Use Scenario: Controlling solenoid valves and small motors in door lock actuators and mirror adjusters. IC Role / Device Role / Timing Role: Dual protected load switch with independent fault reporting via separate source terminals. Use Value: AEC-Q101 qualification and -55°C to +150°C operating range ensure reliability across vehicle life cycle and temperature extremes. | Use Scenario: Bidirectional 20V-rated power path switch in USB-C PD sink applications with overvoltage protection. IC Role / Device Role / Timing Role: Dual-channel reverse-polarity and overvoltage clamp using back-to-back configuration with shared gate control. Use Value: 30V VDSS and 0.72A body diode rating support 20V PD3.1 compliance with margin for transient surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3732UVTQ-7 | Same die and package; differs only in tape-and-reel quantity (3,000 pcs vs. 10,000 pcs) | No functional difference; selected for lower-volume prototyping or JIT replenishment | Choose -7 for evaluation or small-batch production where reel size impacts inventory turnover |
| DMN3025LSD-13 | Single-channel 30V MOSFET (2.5A, 25mΩ @ 10V); no dual topology or 1.8V drive capability | Requires two devices and additional layout area to replicate dual functionality | Select only when higher current per channel (>1.1A) or lower RDS(ON) at 10V gate drive is prioritized over integration |
Compared with DMN3732UVTQ-13, the -7 variant offers identical performance with smaller reel volume, while DMN3025LSD-13 provides superior single-channel specs but lacks integrated dual-channel control, increasing BOM count and PCB area in space-sensitive applications.
Availability
DMN3732UVTQ-13 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC converters, and automotive power-management functions requiring stable component supply, AEC-Q101 compliance, and lead-free green packaging.
Supply support for DMN3732UVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for industrial, computing, consumer, and automotive markets.
The DMN3732UVTQ belongs to Diodes' logic-level dual MOSFET product line, engineered for high-density power management in space-constrained and thermally sensitive applications such as automotive displays and portable electronics.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN3732UVTQ has an operating junction temperature range of –55°C to +150°C. Continuous operation at +150°C is supported when power dissipation remains within the derated limit defined by RθJA = 150°C/W and ambient conditions, verified per JEDEC JESD51-14 standards.
Can both channels be driven simultaneously with a single gate signal?
Yes-G1 and G2 pins are electrically isolated but functionally identical; they may be tied together and driven by one controller output. However, independent control is supported for phased switching or fault containment, and layout must maintain equal trace impedance to avoid timing skew.
Is the body diode rated for continuous conduction in synchronous rectification?
The body diode supports up to 0.72A continuous forward current (IS) at +25°C. For synchronous rectification, its 0.7–1.2V forward voltage (VSD) and low reverse recovery charge enable efficient operation below 1MHz, but thermal derating applies above +70°C ambient.
Does the TSOT26 package require special soldering profile considerations?
Yes-the TSOT26 is moisture sensitivity level 1 (MSL-1) and compatible with standard reflow profiles, but its 0.6mm height and fine pitch demand precise stencil aperture design (0.12mm c to c spacing) and controlled peak temperature (≤260°C) to prevent tombstoning or voiding in the thermal pad region.
DMN3732UVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Rds On (Max) @ Id, Vgs:
- 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40.8pF @ 25V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN3732UVTQ-13 FAQ
1.How can I place an order for DMN3732UVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN3732UVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN3732UVTQ-13 reliable?
The price and inventory of DMN3732UVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN3732UVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMN3732UVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN3732UVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN3732UVTQ-13?
DMN3732UVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN3732UVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN3732UVTQ-13?
For technical support, including DMN3732UVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN3732UVTQ-13 requirements.
6.How does Aetrix verify that DMN3732UVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN3732UVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN3732UVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMN3732UVTQ-13?
All DMN3732UVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN3732UVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN3732UVTQ-13 part is unused and in its original packaging.
Return procedure for DMN3732UVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN3732UVTQ-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
Rohm Semiconductor
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UM6K34NTCN
Rohm Semiconductor
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DMG6601LVT-7
Diodes Incorporated
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