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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN38M1SCA10-7

Name: DMN38M1SCA10-7
Brand: Diodes Incorporated
SKU: DMN38M1SCA10-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN38M1SCA10-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 10-XFLGA

Datasheet:: DMN38M1SCA10-7.pdf

Description:: MOSFET 2N-CH 30V 16A X4-DSN3415

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN38M1SCA10-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for high-efficiency power management in space-constrained battery systems. It delivers 30 V V_SSS, 6.7 mΩ R_SS(ON) at V_GS = 10 V, and 16.0 A continuous source current at T_A = +25°C, housed in a 3.37 mm × 1.47 mm X4-DSN3415-10 package - ideal for compact load-switch and battery-protection circuits.

For engineers reviewing the DMN38M1SCA10-7 datasheet, DMN38M1SCA10-7 pinout, DMN38M1SCA10-7 application, or DMN38M1SCA10-7 equivalent, key selection criteria include its ultra-low on-resistance at 4.5 V gate drive (7.8 mΩ), integrated G-S ESD protection (1 kV HBM), and thermal resistance of 41.6 °C/W - critical for thermally demanding portable and automotive-grade power rails.

Technical Context

This dual-source/dual-gate MOSFET uses a trench-gate process to achieve low R_SS(ON) while maintaining fast switching performance: t_D(ON) = 319 ns, t_F = 766 ns, and Q_g = 36.7 nC at 10 V. Its body diode exhibits V_F(S-S) = 0.8 V at 7.0 A, enabling efficient reverse-current conduction in bidirectional battery paths.

The device operates across –55°C to +150°C junction temperature range with ±20 V V_GSS rating and is qualified per J-STD-020 Level 1 moisture sensitivity. Its NiAu-plated terminals ensure robust solderability per MIL-STD-202 Method 208, supporting high-reliability reflow assembly in automated SMT lines.

Key Specifications

Parameter	Value and Actual Design Meaning
V_SSS	30 V - Maximum source-source blocking voltage; supports 12–24 V battery systems with margin.
R_SS(ON) @ V_GS = 10 V	6.7 mΩ typ - Enables <100 mW conduction loss at 12 A, critical for thermal budget in sealed enclosures.
R_SS(ON) @ V_GS = 4.5 V	7.8 mΩ max - Ensures reliable turn-on with 3.3 V/5 V logic-level controllers without gate boosting.
I_S Continuous @ 25°C	16.0 A - Supports high-current load switching in USB PD, e-fuse, and smart battery modules.
Q_g Total @ 10 V	36.7 nC - Determines gate driver power requirement; enables efficient PWM control up to ~1 MHz.
R_θJA	41.6 °C/W - Defines thermal derating on standard FR-4 PCB; requires minimal copper area for 3 W dissipation.
V_GS(TH)	1.3–2.3 V - Low threshold ensures early turn-on and stable operation under low-voltage brownout conditions.

Pinout & Package

Package: X4-DSN3415-10 - ultra-thin (0.2 mm) leadless dual-source/dual-gate DFN with exposed thermal pad; 3.37 mm × 1.47 mm footprint optimized for high-density portable PCBs.

Pin/Terminal	Circuit Role	Design Meaning
S1 / S2	Source terminals (parallel-connected internally)	Provides dual-source path for current sharing and reduced bond-wire inductance; connects directly to ground plane.
G1 / G2	Gate terminals (parallel-connected internally)	Enables low-impedance gate drive; reduces gate loop inductance for faster edge rates and lower EMI.
Drain (top-side metal)	Main current-carrying terminal	Exposed drain pad serves as primary thermal path and high-current interface; must be soldered to large copper pour.

Key Features

Feature	Design Value
Built-in G–S ESD protection diode	1 kV HBM rating - eliminates need for external TVS in battery-input protection stages.
Lead-free & RoHS 3 compliant	No intentionally added lead, bromine & chlorine <900 ppm, antimony <1000 ppm - meets global environmental compliance mandates.
Low-profile thermal package	0.2 mm height - enables stacking under connectors or shields in ultra-thin wearables and medical devices.
High pulsed current capability	90 A I_SM - supports surge handling during hot-plug events in USB-C and power bank applications.

Applications

Battery Protection IC Interface

USB-C Power Delivery Load Switch

Use Scenario: Integrated into secondary-side overcurrent and short-circuit protection circuits for Li-ion battery packs.

IC Role / Device Role / Timing Role: Acts as main power FET controlled by protection IC's gate driver output; switches within 1 µs to isolate fault currents.

Use Value: 6.7 mΩ R_SS(ON) minimizes voltage drop across protection path, preserving battery runtime and state-of-charge accuracy.

Use Scenario: Used as upstream load switch in USB-C PD sink designs to enable/disconnect VBUS supply.

IC Role / Device Role / Timing Role: Functions as high-side switch driven by PD controller GPIO; handles 3 A–5 A continuous loads at 5–20 V.

Use Value: 4.5 V logic compatibility and 7.8 mΩ R_SS(ON) at 4.5 V ensure full turn-on with standard microcontroller outputs without level-shifting.

Smartphone Backlight Dimming Circuit

Wireless Charging Receiver Power Path

Use Scenario: Controls current to white LED strings in OLED display backlight modules requiring precise dimming control.

IC Role / Device Role / Timing Role: Operates in linear mode for analog dimming or as PWM switch; leverages low R_SS(ON) to reduce thermal rise at 1–2 A DC.

Use Value: 0.2 mm profile allows placement beneath display flex cables; low C_iss (1914 pF) enables clean PWM edges without gate ringing.

Use Scenario: Isolates receiver coil output from battery during charging pauses or foreign object detection (FOD) events.

IC Role / Device Role / Timing Role: Serves as bidirectional isolation FET; body diode conducts reverse current during FOD shutdown sequences.

Use Value: 0.8 V V_F(S-S) at 7 A reduces forward conduction loss during reverse-current phases, improving overall system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load-switch MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LFG-7	R_SS(ON) = 2.5 mΩ @ 10 V, but larger 3.3 mm × 3.3 mm SO-8 package; higher Q_g (42 nC).	Better for higher-current (>20 A), lower-frequency (<500 kHz) applications where board space is less constrained.	Choose when thermal headroom > electrical performance; avoid if thickness <0.3 mm or footprint <6 mm² required.
DMN2023LFG-7	R_SS(ON) = 23 mΩ @ 4.5 V, smaller 2.0 mm × 2.0 mm X2-DSN2020-6 package; lower I_S (6.5 A).	Targeted at sub-5 A portable accessories (TWS earbuds, trackers); not suitable for 12+ A battery paths.	Select only for cost-sensitive, low-current designs where 6.7 mΩ advantage is unnecessary.

Compared with DMN3025LFG-7 and DMN2023LFG-7, DMN38M1SCA10-7 uniquely balances ultra-low R_SS(ON), 4.5 V logic compatibility, and sub-0.3 mm height - making it the only option meeting all three requirements for next-gen slim battery management modules.

Availability

DMN38M1SCA10-7 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery load switching, and wireless charging receiver power path applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for DMN38M1SCA10-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN38M1SCA10-7 belongs to Diodes' X4-DSN ultra-thin power MOSFET product line, engineered specifically for space-constrained, high-efficiency battery-powered systems where thermal density and board real estate are primary constraints.

FAQ

What is the maximum continuous drain current for DMN38M1SCA10-7 at 70°C ambient?

At T_A = +70°C and V_GS = 10 V, the continuous source current is rated at 12.8 A. This derating reflects thermal limits imposed by the 41.6 °C/W R_θJA on standard FR-4 PCB; actual current capacity increases with enhanced copper area or forced airflow.

Does DMN38M1SCA10-7 have internal body diode conduction capability?

Yes - it features an intrinsic body diode with V_F(S-S) = 0.8 V typical at 7.0 A and T_J = +25°C. This enables bidirectional current flow in battery protection and wireless charging applications where reverse conduction occurs during fault recovery or FOD events.

Can DMN38M1SCA10-7 be used in automotive applications?

While DMN38M1SCA10-7 is not AEC-Q101 qualified, Diodes offers automotive-grade variants (e.g., DMN38M1SCA10Q-7) with PPAP documentation and IATF 16949 manufacturing. For non-safety-critical infotainment or accessory power rails, this part may be used subject to customer qualification.

What is the recommended PCB pad layout for X4-DSN3415-10 package?

Diodes specifies a symmetrical 4-pad layout with 0.65 mm pitch and 0.30 mm width traces. The drain pad must be connected to ≥100 mm² internal or external copper pour via ≥6 thermal vias (0.3 mm diameter) to maintain R_θJA ≤ 45 °C/W in production assemblies.

DMN38M1SCA10-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 10-XFLGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel, Common Drain

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1914pF @ 15V

Power - Max:: 3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X4-DSN3415-10

DMN38M1SCA10-7 FAQ

1.How can I place an order for DMN38M1SCA10-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN38M1SCA10-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN38M1SCA10-7 reliable?

The price and inventory of DMN38M1SCA10-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN38M1SCA10-7 is usually 5 days.

3.What payment methods are accepted for DMN38M1SCA10-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN38M1SCA10-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN38M1SCA10-7?

DMN38M1SCA10-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN38M1SCA10-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN38M1SCA10-7?

For technical support, including DMN38M1SCA10-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN38M1SCA10-7 requirements.

6.How does Aetrix verify that DMN38M1SCA10-7 is sourced from the original manufacturer or authorized distributors?

All DMN38M1SCA10-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN38M1SCA10-7 meets industry standards.

7.What is the process for return or replacement of DMN38M1SCA10-7?

All DMN38M1SCA10-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN38M1SCA10-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN38M1SCA10-7 part is unused and in its original packaging.

Return procedure for DMN38M1SCA10-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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