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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN39M1LFVW-13

Name: DMN39M1LFVW-13
Brand: Diodes Incorporated
SKU: DMN39M1LFVW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN39M1LFVW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN39M1LFVW-13.pdf

Description:: MOSFET BVDSS: 25V~30V POWERDI333

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Product details

Overview

DMN39M1LFVW-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, optimized for high-efficiency power management with R_DS(ON) = 5.0 mΩ @ V_GS = 10V, 87A continuous drain current at T_C = +25°C, and thermally efficient surface-mount construction. It serves as a primary switching element in DC-DC converters and LED backlight drivers where low conduction loss and compact board footprint are critical.

For engineers reviewing the DMN39M1LFVW-13 datasheet, DMN39M1LFVW-13 pinout, DMN39M1LFVW-13 application, or DMN39M1LFVW-13 equivalent, this page delivers verified electrical parameters, thermal performance data, package layout guidance, and real-world use-case mapping - all aligned to Diodes' DS43861 Rev. 4-2 specification.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low R_DS(ON) while maintaining fast switching characteristics: t_D(ON) = 4.3 ns, t_D(OFF) = 39 ns, and Q_g = 40 nC @ V_GS = 10V. Its gate threshold voltage (V_GS(TH) = 1–2.5 V) ensures reliable turn-on with standard 3.3V/5V logic-level drive.

The device integrates a body diode with V_SD = 0.7–1.2 V @ I_S = 1A and t_RR = 20.49 ns, supporting synchronous rectification and flyback recovery in high-frequency topologies. Thermal resistance R_θJC = 2.2 °C/W enables direct heat transfer from junction to exposed drain pad under PCB copper bias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche onset; suitable for 24V rail systems with margin.
R_DS(ON)	5.0 mΩ @ V_GS = 10V - Enables <1.5 W conduction loss at 87A, reducing thermal load in high-current paths.
I_D (continuous)	87 A @ T_C = +25°C - Supports high-power density designs without external heatsinking when mounted on 2 oz copper.
Q_g	40 nC @ V_GS = 10V - Determines gate driver strength requirement; compatible with standard 1A peak drivers.
R_θJC	2.2 °C/W - Allows precise junction temperature estimation using measured case temperature; critical for SOA compliance.
t_RR	20.49 ns - Minimizes reverse recovery loss in hard-switched converters operating up to ~1 MHz.
V_GS(TH)	1–2.5 V - Ensures robust turn-on with 3.3V microcontroller GPIO or PWM controller outputs.

Pinout & Package

Package: PowerDI3333-8 (SWP), thermally enhanced surface-mount package with exposed drain pad for low R_θJC. Dimensions: 3.30 × 3.30 × 0.80 mm. UL 94V-0 rated green molding compound.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Top-side D)	Drain	Four parallel drain terminals connected to internal die and exposed bottom pad; primary current path and thermal conduction path.
5 (Top-side G)	Gate	Single gate input; requires <40 nC charge for full enhancement; sensitive to ESD (±20 V rating).
6, 7, 8 (Top-side S)	Source	Three-source terminals tied to source metallization; establishes reference node for gate drive and current sensing.

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	5.0 mΩ @ 10V enables >96% efficiency in 12V→5V buck converters at 30A output.
Thermally optimized package	PowerDI3333-8 reduces board area by 67% vs SO-8 while delivering 2.2 °C/W R_θJC.
Logic-level gate drive	V_GS(TH) ≤ 2.5 V allows direct interface with 3.3V FPGA I/O or MCU PWM without level-shifting.
Fast body diode recovery	t_RR = 20.49 ns supports ZVS/ZCS operation in resonant LLC and active clamp flyback topologies.
Green, RoHS-compliant construction	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); qualified per J-STD-020 Level 1 moisture sensitivity.

Applications

LED Backlight Driver

Point-of-Load DC-DC Converter

Use Scenario: High-brightness LCD panel backlighting in industrial HMIs and automotive displays requiring PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: Primary high-side switch controlling current through series-connected LED strings.

Use Value: Low R_DS(ON) minimizes power loss during 100% duty-cycle operation; fast switching avoids audible noise in PWM frequency range.

Use Scenario: 12V-to-1.2V conversion for CPU core power in embedded computing modules with strict thermal envelope limits.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter secondary side, commutated at 500 kHz.

Use Value: 7.4 mΩ @ 4.5V enables >92% efficiency at 20A load; low Q_gd/Q_gs ratio improves control loop stability.

USB-C PD Power Path

Motor Drive Half-Bridge

Use Scenario: Input power path switch in USB-C PD 3.0 sink applications handling up to 100W (20V/5A) with overvoltage protection.

IC Role / Device Role / Timing Role: Reverse-blocking switch placed between Type-C connector and system bus, controlled by PD controller.

Use Value: 30V V_DSS provides 2× margin over 20V max PD voltage; low gate charge enables fast fault response (<1 µs turn-off).

Use Scenario: Low-side switch in 24V brushed DC motor driver for HVAC actuators and industrial valves.

IC Role / Device Role / Timing Role: PWM-controlled power switch in half-bridge configuration, operating at 25 kHz with 10%–90% duty cycle.

Use Value: Avalanche-rated (E_AS = 72 mJ) withstands inductive kickback without snubbers; rugged body diode handles freewheeling current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN39M1LFB-7	Same die, SO-8 package; R_θJA = 62 °C/W (vs 46 °C/W for PowerDI3333-8); larger footprint.	Limited to lower-power applications (<40A) due to higher thermal resistance; no exposed drain pad.	Select when legacy SO-8 layout reuse is required and thermal headroom exists.
DMN3020LFD-13	30V, 2.0 mΩ @ 10V, but rated only for 42A; smaller PowerDI3333-8 variant with reduced die size.	Better suited for space-constrained 10–20A loads; insufficient for 71A+ continuous operation.	Choose for cost-sensitive, lower-current designs where 5.0 mΩ is excessive.

Compared with DMN39M1LFVW-13, DMN39M1LFB-7 trades thermal performance for package compatibility, while DMN3020LFD-13 sacrifices current capability for lower R_DS(ON) in lighter loads - making the -13 variant optimal for high-current, space-constrained 30V power stages.

Availability

DMN39M1LFVW-13 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load DC-DC conversion, and USB-C PD power path management requiring stable component supply across production ramps and long-life industrial programs.

Supply support for DMN39M1LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive subsystems where thermal and board-area constraints dominate.

FAQ

What is the maximum safe operating temperature for DMN39M1LFVW-13?

The device has a rated junction temperature range of –55°C to +150°C. Under continuous operation, TJ must not exceed +150°C. With R_θJC = 2.2 °C/W and typical PCB copper bias, case temperature should be held below +125°C to maintain 25°C safety margin - verified via thermal imaging or thermocouple measurement on the exposed drain pad.

Can DMN39M1LFVW-13 be used in avalanche mode?

Yes - it is rated for single-pulse avalanche energy E_AS = 72 mJ and current I_AS = 38 A with L = 0.1 mH. This capability supports unclamped inductive switching in motor drives and relay drivers, but repetitive avalanche is not guaranteed and requires derating per Diodes' AN-AB100 application note.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 3.3–10 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance (Crss = 208 pF). Without it, overshoot exceeding ±20 V V_GS rating may occur during fast switching, risking gate oxide damage - especially with high-speed drivers and long PCB traces.

How does the PowerDI3333-8 package compare to SO-8 thermally?

PowerDI3333-8 achieves R_θJA = 46 °C/W (2 oz copper, thermal bias) versus ~62 °C/W for SO-8 - a 26% improvement. Its exposed drain pad directly couples heat to inner-layer copper, whereas SO-8 relies on perimeter leads. This allows 30% higher current handling in same board area without forced air or heatsinks.

DMN39M1LFVW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2387 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMN39M1LFVW-13 FAQ

1.How can I place an order for DMN39M1LFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN39M1LFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN39M1LFVW-13 reliable?

The price and inventory of DMN39M1LFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN39M1LFVW-13 is usually 5 days.

3.What payment methods are accepted for DMN39M1LFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN39M1LFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN39M1LFVW-13?

DMN39M1LFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN39M1LFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN39M1LFVW-13?

For technical support, including DMN39M1LFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN39M1LFVW-13 requirements.

6.How does Aetrix verify that DMN39M1LFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMN39M1LFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN39M1LFVW-13 meets industry standards.

7.What is the process for return or replacement of DMN39M1LFVW-13?

All DMN39M1LFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN39M1LFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN39M1LFVW-13 part is unused and in its original packaging.

Return procedure for DMN39M1LFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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