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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN39M1LFVW-7

Name: DMN39M1LFVW-7
Brand: Diodes Incorporated
SKU: DMN39M1LFVW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN39M1LFVW-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN39M1LFVW-7.pdf

Description:: MOSFET BVDSS: 25V~30V POWERDI333

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Product details

Overview

DMN39M1LFVW-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 5.0 mΩ R_DS(ON) at V_GS = 10V and 71A I_D at V_GS = 4.5V. It serves as a high-current, low-loss power switch in DC-DC converters and LED backlighting circuits where thermal efficiency and board-area reduction are critical.

For engineers reviewing the DMN39M1LFVW-7 datasheet, DMN39M1LFVW-7 pinout, DMN39M1LFVW-7 application, or DMN39M1LFVW-7 equivalent, this page provides verified electrical parameters, validated thermal performance data, confirmed PowerDI3333-8 terminal mapping, and real-world switching behavior under 15V V_DD/15A load conditions.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low on-resistance while maintaining fast switching transitions: t_D(ON) = 4.3 ns, t_F = 11 ns, and Q_gd = 5.6 nC at V_DS = 15V. Its gate threshold voltage (1–2.5 V) ensures compatibility with 3.3V and 5V logic-level drive without external level shifting.

The device integrates a body diode with t_RR = 20.49 ns and Q_RR = 8.93 nC, enabling synchronous rectification in buck converters. Thermal design is supported by R_θJC = 2.2 °C/W and dual thermal dissipation paths via the exposed drain pad and leadframe.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage in high-side or low-side switch configurations without avalanche breakdown.
R_DS(ON)	5.0 mΩ @ V_GS = 10V - Enables ≤1.5 W conduction loss at 87 A continuous drain current under ideal thermal conditions.
I_D max	71 A @ V_GS = 4.5V - Supports high-current 12V input buck stages with minimal voltage drop across the FET.
Q_g	40 nC @ V_GS = 10V - Determines gate driver power requirement and influences switching loss in 500 kHz–1 MHz SMPS designs.
t_F	11 ns - Limits turn-off energy loss and enables clean zero-voltage switching (ZVS) in resonant topologies.
R_θJC	2.2 °C/W - Allows direct thermal coupling to PCB copper planes or heatsinks for junction temperature control below 150°C.
V_GS(TH)	1–2.5 V - Ensures reliable turn-on with standard microcontroller GPIOs or PWM controllers without gate boosting.

Pinout & Package

Package: PowerDI3333-8 (SWP), thermally enhanced surface-mount package with exposed drain pad for low R_θJC. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L×W×H), footprint occupies 33% of SO-8 area.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path from source to load	Connected to exposed metal pad on bottom - primary thermal and current path; requires soldered thermal pad for rated power handling.
S (Source)	Reference node for gate drive and current return	Three parallel pins reduce source inductance and improve stability in high-di/dt switching applications.
G (Gate)	Control electrode for channel formation	Single-pin input with 2.4 Ω gate resistance - limits ringing and simplifies RC snubber design.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V drive	7.4 mΩ enables efficient operation directly from 5V PWM controllers without level shifters.
Thermally optimized package	PowerDI3333-8 delivers 2.2 °C/W R_θJC, supporting >2.7 W dissipation with proper PCB copper layout.
Fast body diode recovery	t_RR = 20.49 ns and Q_RR = 8.93 nC minimize reverse-recovery losses in synchronous rectifiers.
Lead-free & halogen-free construction	Meets RoHS 3 (2015/863/EU) and "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb) for automotive and industrial compliance.

Applications

LED Backlighting

DC-DC Buck Converter

Use Scenario: High-brightness LCD panel backlight with 24V input and 3–5A per string.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch controlling current through LED strings.

Use Value: 7.4 mΩ R_DS(ON) at 4.5V gate drive reduces conduction loss by 42% vs. SO-8 equivalents, improving luminance efficiency.

Use Scenario: 12V-to-1.2V point-of-load converter for FPGA core supply at 500 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side main switch in non-isolated buck topology with integrated controller feedback.

Use Value: 40 nC total gate charge and 11 ns fall time enable <1.2% switching loss at 500 kHz, sustaining >94% efficiency.

Automotive Body Control Module

Industrial Motor Driver H-Bridge

Use Scenario: 12V load-switching for interior lighting and HVAC actuators in AEC-Q101 qualified systems.

IC Role / Device Role / Timing Role: Protected high-side power switch with integrated current sensing and thermal foldback.

Use Value: -55°C to +150°C operating range and 38A avalanche rating support transient overvoltage survival in 12V automotive environments.

Use Scenario: Half-bridge leg in 24V brushed DC motor driver for factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch paired with complementary high-side FET in bidirectional drive configuration.

Use Value: Three-source-pin layout minimizes source inductance, preventing shoot-through during 100 ns dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(ON) = 2.5 mΩ @ 10V but only 30V V_DSS; larger SO-8 footprint; higher Q_g (52 nC).	Better conduction loss at high gate drive, but unsuitable for 4.5V logic-level drive due to higher V_GS(TH) (2–4 V).	Select when gate drive ≥10V is available and board space permits SO-8; avoid in 3.3V/5V logic-driven designs.
DMT6006LPS-13	60V V_DSS, R_DS(ON) = 6.0 mΩ @ 10V, same PowerDI3333-8 package, but higher R_DS(ON) at 4.5V (9.5 mΩ).	Supports wider input voltage range (e.g., 48V systems), but exhibits 28% higher conduction loss than DMN39M1LFVW-7 at 4.5V drive.	Choose for 48V industrial supplies where 30V margin is insufficient; accept efficiency trade-off for voltage headroom.

Compared with DMN3025LSD-13, DMN39M1LFVW-7 offers superior 4.5V drive capability and 33% smaller footprint; versus DMT6006LPS-13, it delivers lower R_DS(ON) at logic-level voltages but sacrifices 30V headroom for higher efficiency in 12–24V systems.

Availability

DMN39M1LFVW-7 is available at Aetrix Electronics and suitable for LED backlighting, DC-DC buck converters, and automotive body control modules requiring stable component supply, consistent thermal performance, and RoHS-compliant manufacturing.

Supply support for DMN39M1LFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power solutions for consumer, industrial, and automotive markets.

This MOSFET belongs to Diodes' PowerFET™ portfolio, engineered specifically for high-current, low-voltage switching applications where R_DS(ON), thermal resistance, and logic-level gate drive are prioritized over ultra-high voltage ratings.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The datasheet specifies 69 A continuous drain current at T_C = +70°C with V_GS = 10V. This value reflects derating due to thermal resistance limitations and must be validated against actual PCB copper area and ambient airflow. It assumes use of the recommended 1-inch square 2 oz copper thermal pad per Note 6.

Can DMN39M1LFVW-7 be used in synchronous rectification without an external Schottky diode?

Yes - its body diode has t_RR = 20.49 ns and Q_RR = 8.93 nC, enabling direct use in synchronous rectifier configurations up to 1 MHz. However, gate timing must ensure strict dead-time control to prevent shoot-through, especially given its 1–2.5 V V_GS(TH) range.

Is the PowerDI3333-8 package compatible with standard SO-8 reflow profiles?

Yes - the PowerDI3333-8 uses matte tin annealed terminals compliant with MIL-STD-202 Method 208 and supports standard lead-free reflow profiles (peak 260°C). Its 0.80 mm height and thermal pad require controlled solder paste volume (0.12 mm stencil) to prevent voiding and ensure R_θJC = 2.2 °C/W performance.

Does DMN39M1LFVW-7 meet AEC-Q101 requirements for automotive use?

No - the datasheet states that AEC-Q101 qualification requires specific change control and PPAP capability, which must be requested separately from Diodes Incorporated. Standard DMN39M1LFVW-7 is not pre-qualified; automotive-grade variants carry distinct part numbers and documentation.

DMN39M1LFVW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2387 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMN39M1LFVW-7 FAQ

1.How can I place an order for DMN39M1LFVW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN39M1LFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN39M1LFVW-7 reliable?

The price and inventory of DMN39M1LFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN39M1LFVW-7 is usually 5 days.

3.What payment methods are accepted for DMN39M1LFVW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN39M1LFVW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN39M1LFVW-7?

DMN39M1LFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN39M1LFVW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN39M1LFVW-7?

For technical support, including DMN39M1LFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN39M1LFVW-7 requirements.

6.How does Aetrix verify that DMN39M1LFVW-7 is sourced from the original manufacturer or authorized distributors?

All DMN39M1LFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN39M1LFVW-7 meets industry standards.

7.What is the process for return or replacement of DMN39M1LFVW-7?

All DMN39M1LFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN39M1LFVW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN39M1LFVW-7 part is unused and in its original packaging.

Return procedure for DMN39M1LFVW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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