Diodes Incorporated DMN39M1LK3-13

Overview

DMN39M1LK3-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, optimized for high-efficiency power management with R_DS(ON) = 5.5 mΩ @ V_GS = 10V and 89 A continuous drain current at T_C = +25°C. It serves as a primary switching element in synchronous buck converters and industrial DC-DC modules where low conduction loss and fast switching are critical.

For engineers reviewing the DMN39M1LK3-13 datasheet, DMN39M1LK3-13 pinout, DMN39M1LK3-13 application, or DMN39M1LK3-13 equivalent, this page delivers verified electrical parameters, thermal performance data, TO252 terminal mapping, and validated alternatives for power stage design in automotive-grade and industrial embedded systems.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining controlled gate charge (Q_g = 38.6 nC @ V_GS = 10V) and low output capacitance (C_oss = 304 pF). Its body diode exhibits t_RR = 16.6 ns and Q_rr = 7.1 nC under IF = 15A, dI/dt = 100 A/μs conditions-enabling efficient synchronous rectification.

The device is characterized for operation across –55°C to +150°C junction temperature range, with R_θJC = 1.9°C/W and R_θJA = 47.1°C/W on FR-4 board (2 oz copper, 1-inch² thermal pad), supporting thermally constrained PCB layouts in space-limited power supplies.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, single-ended leadframe with exposed drain pad for thermal and electrical connection. Molded green compound (UL 94V-0), matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3803PBF and DMT3006LPS-13, DMN39M1LK3-13 delivers optimal balance of low R_DS(ON), fast switching (low Q_g/C_oss), and superior thermal capability in compact TO252-making it preferred for high-density, high-efficiency industrial and automotive power stages.

Availability

DMN39M1LK3-13 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and server voltage regulators requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DMN39M1LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current switching in industrial, computing, and automotive power conversion systems where thermal performance and reliability are critical.

FAQ

What is the maximum safe operating junction temperature for DMN39M1LK3-13?

The absolute maximum junction temperature is +150°C, as specified in the Absolute Maximum Ratings table. Operation above this value risks permanent parametric shift or catastrophic failure. Derating curves in Figure 6 show R_DS(ON) increases ~1.8× from –55°C to +150°C, requiring thermal design to maintain T_J ≤ 135°C for 10-year reliability in industrial environments.

Can DMN39M1LK3-13 be used in automotive applications?

While not pre-qualified to AEC-Q101, the DMN39M1LK3-13 meets key automotive requirements: operates from –55°C to +150°C, uses halogen-free green molding compound, and features robust avalanche rating (E_AS = 84 mJ). Diodes states that automotive-grade versions with PPAP capability and IATF 16949 manufacturing are available upon request.

What is the recommended PCB layout for thermal performance?

Per datasheet Figure 6 and Package Outline, the exposed drain pad must be connected to ≥1 inch² of 2 oz copper on the bottom layer, with ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground planes. The suggested pad layout (C = 4.572 mm, Y2 = 10.700 mm) ensures R_θJA = 47.1°C/W-critical to sustain 69 A at V_GS = 4.5V without exceeding T_J = 125°C.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.7 V (typ) at 1 A and t_RR = 16.6 ns-comparable to low-V_F Schottky diodes (e.g., SB560) but with higher leakage at elevated temperature. Its Q_rr = 7.1 nC enables synchronous rectification up to 500 kHz without significant reverse recovery loss, though discrete Schottkys remain preferable above 1 MHz or for ultra-low forward drop (<0.45 V) requirements.