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Diodes Incorporated DMN39M1LSS-13

Part No.:
DMN39M1LSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMN39M1LSS-13.pdf
Description:
MOSFET BVDSS: 25V~30V SO-8 T&R 2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,539

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Product details

Overview

DMN39M1LSS from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency power management with 5.5mΩ RDS(ON) @ VGS = 10V, 15A continuous drain current at +25°C, and 100% production-tested UIS robustness. It serves as a main switch in synchronous buck converters and motor drive half-bridges.

For engineers reviewing the DMN39M1LSS datasheet, DMN39M1LSS pinout, DMN39M1LSS application, or DMN39M1LSS equivalent, key selection criteria include low RDS(ON) at 4.5V gate drive, fast switching (tF = 20.9ns), SO-8 thermal performance (RθJA = 62°C/W), and AEC-Q101 readiness for automotive power stages.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low on-resistance while maintaining controlled gate charge (Qg = 42nC @ 10V) and minimized reverse transfer capacitance (Crss = 242pF). Its body diode exhibits 1.2V forward voltage at 1A and 20.5ns reverse recovery time.

The device is characterized for operation across –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 10V. Safe operating area (SOA) is defined for single-pulse and DC conditions up to 15A/30V with derating.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 30V - Maximum blocking voltage for 12V/24V rail switching without avalanche stress
RDS(ON) 5.5mΩ @ VGS = 10V - Enables <1.5W conduction loss at 15A in compact SO-8 layout
ID (max) 15A @ TA = +25°C - Supports high-current DC-DC output stages with minimal heatsinking
Qg 42nC @ VGS = 10V - Determines gate driver current requirement for <100ns turn-on in 500kHz designs
Ciss 2311pF @ VDS = 15V - Sets input impedance and impacts EMI filter design in hard-switched topologies
tF 20.9ns - Limits switching transition losses during high-frequency PWM in backlight inverters
EAS 72mJ - Confirmed energy rating for unclamped inductive switching in motor control fault conditions

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin, 4.9mm × 6.0mm footprint, 1.45mm height), RoHS-compliant matte tin-plated leadframe, moisture sensitivity level 3.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source (S) Four parallel source pins reduce bond-wire inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8 Drain (D) Four paralleled drain terminals provide low-inductance connection to PCB power plane and thermal pad
G (Pin 3 of internal schematic) Gate (G) Single gate terminal with 2.4Ω intrinsic gate resistance-limits dV/dt-induced shoot-through in half-bridge layouts

Key Features

Feature Design Value
Low RDS(ON) at 4.5V 7.5mΩ enables efficient 5V logic-level gate drive in USB PD and portable power banks
100% UIS tested Guarantees minimum 38A avalanche current and 72mJ energy handling without parameter shift
Low Coss 304pF minimizes capacitive turn-off losses and improves light-load efficiency in adaptive frequency controllers
Green compound Halogen- and antimony-free molding compound meets IEC 61249-2-21 and automotive ELV requirements
Thermal RθJC 7.5°C/W - Enables direct thermal coupling to copper pour for >1.9W steady-state dissipation

Applications

Motor Control DC-DC Converter

Use Scenario: Brushed DC motor H-bridge driver in automotive seat adjusters and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation at 20–50kHz.

Use Value: 5.5mΩ RDS(ON) reduces I²R heating by >30% vs. legacy 10mΩ SO-8 MOSFETs, enabling smaller heatsinks in confined cabin modules.

Use Scenario: Synchronous rectifier in 12V-to-5V/3.3V buck converter for infotainment head units.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve conversion efficiency above 85%.

Use Value: 7.5mΩ RDS(ON) @ 4.5V allows full conduction with standard 5V gate drivers, eliminating external level-shifting circuitry.

Backlight Inverter Power Management IC Interface

Use Scenario: High-side switch in LED backlight boost converter for 10.1" automotive displays.

IC Role / Device Role / Timing Role: Fast-switching (tF = 20.9ns) main switch driving resonant tank at 500kHz.

Use Value: 242pF Crss suppresses Miller-induced false turn-on, ensuring stable PWM dimming without gate clamping networks.

Use Scenario: Load switch enabling/disabling auxiliary rails (e.g., CAN transceiver, sensor bias) in ADAS domain controllers.

IC Role / Device Role / Timing Role: Controlled power path with fast enable/disable response (<100ns) and low quiescent current leakage.

Use Value: 1μA IDSS at 30V ensures <10μW standby loss per channel, critical for always-on vehicle subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3025LSD-13 RDS(ON) = 2.5mΩ @ 10V but rated only to 30V; higher Qg (52nC); SO-8 package Better conduction loss but slower switching; less suitable for >300kHz DC-DC Prefer when thermal budget dominates over switching loss, e.g., low-frequency motor drives
IPD25N03S4-05 30V, 25A, RDS(ON) = 4.5mΩ @ 10V; TO-252 package; no UIS rating specified Higher current capability but larger footprint and no production UIS validation Choose when board space permits TO-252 and avalanche robustness is not required

Compared with DMN39M1LSS, DMN3025LSD-13 offers lower conduction loss but sacrifices switching speed and UIS assurance, while IPD25N03S4-05 trades SO-8 compactness and verified ruggedness for higher current rating in a larger package.

Availability

DMN39M1LSS is available at Aetrix Electronics and suitable for motor controls, DC-DC converters, and backlighting systems requiring stable component supply, automotive-grade reliability, and SO-8 thermal performance.

Supply support for DMN39M1LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.

This MOSFET belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and consumer applications where RDS(ON), UIS robustness, and thermal performance are critical.

FAQ

Is DMN39M1LSS qualified to AEC-Q101?

Yes, DMN39M1LSS is AEC-Q101 qualified for automotive applications. The datasheet states it meets AEC-Q101 requirements, and Diodes' product definitions confirm qualification for high-reliability automotive power stages including motor control and lighting. Full PPAP documentation is available upon request through authorized channels.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation up to this limit. With RθJA = 62°C/W on a 2oz FR-4 board using recommended pad layout, sustained 1.9W dissipation is achievable at +25°C ambient-derating linearly to zero at +150°C junction.

Can DMN39M1LSS be used in synchronous rectification with 5V gate drive?

Yes-its RDS(ON) is specified at 7.5mΩ @ VGS = 4.5V and ID = 15A, making it suitable for 5V logic-level synchronous rectifiers. Gate threshold voltage (VGS(TH)) ranges from 1.0V to 2.5V, ensuring reliable turn-on with standard 5V microcontroller outputs.

Does the SO-8 package include an exposed thermal pad?

No-the DMN39M1LSS SO-8 package does not feature an exposed thermal pad. Thermal performance relies on the four-source and four-drain leads soldered to internal PCB copper planes. Recommended pad layout uses 1-inch square copper on 2oz FR-4 to achieve RθJA = 62°C/W.

DMN39M1LSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2311 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.4W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMN39M1LSS-13 FAQ

1.How can I place an order for DMN39M1LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN39M1LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN39M1LSS-13 reliable?

The price and inventory of DMN39M1LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN39M1LSS-13 is usually 5 days.

3.What payment methods are accepted for DMN39M1LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN39M1LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN39M1LSS-13?

DMN39M1LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN39M1LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN39M1LSS-13?

For technical support, including DMN39M1LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN39M1LSS-13 requirements.

6.How does Aetrix verify that DMN39M1LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMN39M1LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN39M1LSS-13 meets industry standards.

7.What is the process for return or replacement of DMN39M1LSS-13?

All DMN39M1LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN39M1LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN39M1LSS-13 part is unused and in its original packaging.

Return procedure for DMN39M1LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN39M1LSS-13 Tags

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