Diodes Incorporated DMN4008LFG-13

Overview

DMN4008LFG-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in POWERDI®3333-8 package, optimized for high-efficiency DC-DC converters and power management functions. It delivers R_DS(ON) of 7.5 mΩ @ V_GS = 10 V, 14.4 A continuous drain current at T_A = +25°C, and supports automotive-grade reliability per AEC-Q101.

For engineers reviewing the DMN4008LFG-13 datasheet, DMN4008LFG-13 pinout, DMN4008LFG-13 application, or DMN4008LFG-13 equivalent, key selection criteria include low on-resistance at 4.5 V gate drive (10 mΩ), thermally efficient 33% board-area reduction vs. SO-8, and qualified operation from −55°C to +150°C junction temperature.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining fast switching performance: t_D(on) = 8.2 ns, t_D(off) = 69.7 ns, and Q_g = 74 nC at V_GS = 10 V. Its body diode exhibits t_rr = 18.5 ns and Q_rr = 12.0 nC under 10 A/100 A/μs conditions.

The device is rated for 40 V V_DSS, ±20 V V_GS, and operates with gate threshold voltage V_GS(th) between 1 V and 3 V. Thermal resistance is R_θJA = 53 °C/W (2 oz copper, thermal bias), enabling 2.3 W steady-state power dissipation in compact layouts.

Key Specifications

Pinout & Package

Package: POWERDI®3333-8 - surface-mount, thermally enhanced plastic package with exposed drain pad; 3.3 mm × 3.3 mm footprint, 0.8 mm height, 0.65 mm pitch; UL 94V-0 rated, halogen/antimony-free "Green" compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN3022LFG-13 and DMT6004LPS-13, DMN4008LFG-13 uniquely balances 40 V rating, 10 mΩ R_DS(ON) at 4.5 V, and minimal 3.3 mm × 3.3 mm footprint-making it optimal for space-constrained 12–36 V industrial and automotive power stages where thermal density matters.

Availability

DMN4008LFG-13 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, and industrial 24 V DC-DC converters requiring stable component supply and AEC-Q101 compliance.

Supply support for DMN4008LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' POWERDI® portfolio of thermally optimized surface-mount discrete devices, engineered specifically for high-density power conversion and automotive-grade reliability in space-constrained applications.

FAQ

What is the maximum continuous drain current for DMN4008LFG-13 at 70°C ambient?

The maximum continuous drain current is 11.6 A at T_A = +70°C with V_GS = 10 V, based on thermal derating from the 14.4 A rating at +25°C and R_θJA = 53 °C/W on a 2 oz copper board with thermal bias. This value assumes no additional heatsinking beyond the recommended pad layout.

Does DMN4008LFG-13 support gate drive from a 3.3 V microcontroller?

Yes - its gate threshold voltage V_GS(th) ranges from 1 V to 3 V, and R_DS(ON) is specified at 20 mΩ with V_GS = 3.3 V and I_D = 6 A. However, conduction losses increase significantly versus 4.5 V or 10 V drive, so system-level efficiency should be verified at actual load conditions.

Is the POWERDI®3333-8 package lead-free and RoHS compliant?

Yes - DMN4008LFG-13 uses matte tin annealed over copper leadframe and is fully RoHS compliant per EU Directive 2011/65/EU, with no purposely added lead. It is also halogen- and antimony-free ("Green"), containing <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony compounds.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The body diode has V_SD = 0.7–1.1 V at 1 A and t_rr = 18.5 ns, which is slower and higher forward drop than typical Schottky diodes (e.g., 0.3–0.5 V, <5 ns). However, in synchronous rectifier designs, the body diode conducts only briefly during dead-time; its Q_rr = 12.0 nC is low enough to avoid significant shoot-through risk when properly timed.