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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN4020LFDE-13

Name: DMN4020LFDE-13
Brand: Diodes Incorporated
SKU: DMN4020LFDE-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN4020LFDE-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-PowerUDFN

Datasheet:: DMN4020LFDE-13.pdf

Description:: MOSFET N-CH 40V 8A 6UDFN

Quantity:: RFQ Add To RFQ list

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Inventory:4,166

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Product details

Overview

DMN4020LFDE-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, delivering 20mΩ R_DS(ON) @ V_GS = 10V and 8.0A continuous drain current at T_A = +25°C. It serves as a low-profile power switch in DC-DC converters, load switching, and battery protection circuits where compact size and low conduction loss are critical.

For engineers reviewing the DMN4020LFDE-13 datasheet, DMN4020LFDE-13 pinout, DMN4020LFDE-13 application, or DMN4020LFDE-13 equivalent, key selection criteria include its 0.6mm profile, 4mm² PCB footprint, 1.4–2.4V gate threshold, 2.03W power dissipation on thermally enhanced layout, and JEDEC-qualified reliability for industrial-grade deployment.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining fast switching performance: t_D(ON) = 5.3ns, t_R = 7.1ns, and Q_g = 19.1nC @ V_GS = 10V. Its body diode exhibits V_SD = 0.7V @ I_S = 1A and t_RR = 10.5ns, supporting synchronous rectification and reverse recovery–sensitive topologies.

The device operates across –55°C to +150°C junction temperature range with R_θJA = 61°C/W on 2oz copper FR-4 with thermal bias, and features NiPdAu-plated terminals rated for MIL-STD-202 solderability. Its U-DFN2020-6 (Type E) package enables high-density routing with exposed drain pad for thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage before avalanche; suitable for 24V rail and 36V automotive auxiliary systems.
R_DS(ON)	20mΩ @ V_GS = 10V, I_D = 8A - Enables <160mW conduction loss at 8A, reducing thermal stress in space-constrained layouts.
I_D (continuous)	8.0A @ T_A = +25°C - Supports sustained load switching in portable power banks and USB-C PD sink applications.
V_GS(TH)	1.4–2.4V - Ensures reliable turn-on with 3.3V logic-level drivers without gate boosting circuitry.
Q_g	19.1nC @ V_GS = 10V - Determines gate drive energy requirement; enables efficient operation up to ~1MHz in buck converters.
R_θJA	61°C/W (thermally enhanced layout) - Defines junction-to-ambient thermal resistance; requires minimum 1-inch² copper pour for full 2.03W rating.
T_J range	–55°C to +150°C - Qualified per JEDEC standards for extended industrial and under-hood automotive environments.

Pinout & Package

U-DFN2020-6 (Type E) package: 2.0mm × 2.0mm × 0.6mm, molded green compound (UL 94V-0), NiPdAu-plated copper leadframe, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output terminal	Exposed pad (bottom center); must be soldered to large copper area for thermal conduction and current return path.
S (Source)	Reference node for gate control and current return	Connected to ground or low-side reference; forms common node with gate driver return and power ground.
G (Gate)	Control input for channel modulation	High-impedance input requiring <100nA leakage; sensitive to ESD; routed away from noisy traces.

Key Features

Feature	Design Value
0.6mm profile	Enables integration into ultra-thin consumer electronics (e.g., wearables, slim power adapters) without height clearance issues.
4mm² PCB footprint	Reduces board area by >40% vs. SO-8 or PowerPAK® 1212-8, improving layout density in multi-MOSFET power stages.
Low V_GS(TH)	Guarantees full enhancement at 3.3V logic, eliminating need for level shifters in microcontroller-driven load switches.
JEDEC-qualified reliability	Validated per AEC-Q stress test definitions for high-reliability industrial use-no automotive qualification required unless Q-suffix part selected.
Halogen- & antimony-free	Meets RoHS 3 (2015/863/EU) and "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb), supporting eco-compliance programs.

Applications

USB-C Power Delivery Sink

Battery Protection Circuit

Use Scenario: Controls power path between USB-C port and system battery during charging/discharging cycles.

IC Role / Device Role / Timing Role: Low-side load switch enabling bidirectional current flow with minimal forward voltage drop.

Use Value: 20mΩ R_DS(ON) limits power loss to ≤1.3W at 8A, preserving battery efficiency and thermal margin in compact enclosures.

Use Scenario: Isolates cell stack from load during overcurrent or short-circuit events in Li-ion packs.

IC Role / Device Role / Timing Role: Primary discharge FET in protection IC–driven cutoff path, responding within microseconds to fault signals.

Use Value: 32A pulsed drain rating supports robust short-circuit withstand; low Q_gd = 2.5nC ensures clean turn-off without oscillation.

DC-DC Synchronous Rectifier

Industrial Load Switch

Use Scenario: Replaces Schottky diode in secondary-side rectification of isolated flyback or forward converters.

IC Role / Device Role / Timing Role: Synchronously gated power switch timed to primary-side MOSFET dead time to minimize reverse recovery loss.

Use Value: 10.5ns t_RR and 4.15nC Q_RR reduce switching loss by >30% vs. discrete diodes, improving converter efficiency above 90%.

Use Scenario: Enables/disables 24V auxiliary loads (e.g., sensors, actuators) in programmable logic controllers.

IC Role / Device Role / Timing Role: High-reliability, logic-level–controlled power switch with controlled slew rate for inrush limiting.

Use Value: 6.7A I_D @ V_GS = 4.5V ensures compatibility with 5V microcontrollers; 189°C/W R_θJA allows derating to 0.42W on standard PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LFG-7	30V V_DSS, 20mΩ @ 10V, same U-DFN2020-6 package but lower voltage rating	Limited to ≤24V systems; unsuitable for 36V industrial rails or 40V transient-tolerant designs	Select only when maximum system voltage is confirmed ≤30V and cost optimization is prioritized over voltage headroom.
AO3400	30V V_DSS, 28mΩ @ 10V, SOT-23 package, higher R_θJA = 200°C/W	Lower power handling (1.4W max), larger footprint (2.9mm × 1.3mm), no thermal pad	Choose for legacy SOT-23 designs or low-current (<3A) applications where board real estate is less constrained than height.

Compared with DMN3020LFG-7 and AO3400, the DMN4020LFDE-13 provides superior voltage margin (40V), lowest thermal resistance in its class, and smallest height-making it optimal for next-generation 24–36V power modules demanding high density and efficiency.

Availability

DMN4020LFDE-13 is available at Aetrix Electronics and suitable for USB-C power delivery sinks, battery protection circuits, DC-DC synchronous rectifiers, and industrial load switches requiring stable component supply across production lifecycles.

Supply support for DMN4020LFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' "PowerMOS™" product line, engineered specifically for high-efficiency, low-profile power switching in portable, industrial, and computing applications where thermal and spatial constraints dominate design trade-offs.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN4020LFDE-13 supports 6.3A continuous drain current at T_A = +70°C with V_GS = 10V, based on thermal derating from its 8.0A rating at 25°C. This value assumes mounting on FR-4 with 2oz copper and thermal bias to a 1-inch² copper plate, per Note 6 in the datasheet.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 3–10Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 58pF) and parasitic inductance. The datasheet specifies t_D(ON) and t_R test conditions using R_G = 3Ω, confirming that this value ensures clean switching without overshoot in typical PCB layouts.

Is the U-DFN2020-6 (Type E) package compatible with standard reflow profiles?

Yes-the device is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C). Its NiPdAu finish ensures solderability per MIL-STD-202 Method 208, and the green molding compound meets UL 94V-0 flammability requirements.

Can DMN4020LFDE-13 replace older SO-8 MOSFETs in existing designs?

Direct replacement is not mechanically feasible due to differing package geometry and thermal interface-U-DFN2020-6 has no leads and requires bottom-side thermal pad connection. Layout redesign is mandatory, including updated stencil aperture, solder paste volume, and thermal copper pour, though electrical functionality remains compatible.

DMN4020LFDE-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-PowerUDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19.1 nC @ 20 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 660mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type E)

DMN4020LFDE-13 FAQ

1.How can I place an order for DMN4020LFDE-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN4020LFDE-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN4020LFDE-13 reliable?

The price and inventory of DMN4020LFDE-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4020LFDE-13 is usually 5 days.

3.What payment methods are accepted for DMN4020LFDE-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4020LFDE-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN4020LFDE-13?

DMN4020LFDE-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN4020LFDE-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN4020LFDE-13?

For technical support, including DMN4020LFDE-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4020LFDE-13 requirements.

6.How does Aetrix verify that DMN4020LFDE-13 is sourced from the original manufacturer or authorized distributors?

All DMN4020LFDE-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4020LFDE-13 meets industry standards.

7.What is the process for return or replacement of DMN4020LFDE-13?

All DMN4020LFDE-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4020LFDE-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN4020LFDE-13 part is unused and in its original packaging.

Return procedure for DMN4020LFDE-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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