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Diodes Incorporated DMN4020LFDEQ-13
- Part No.:
- DMN4020LFDEQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMN4020LFDEQ-13.pdf
- Description:
- MOSFET BVDSS: 31V~40V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:2,225
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Product details
Overview
DMN4020LFDEQ-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, AEC-Q101 qualified for automotive use. It delivers 21 mΩ RDS(ON) at VGS = 10 V and 8.6 A continuous drain current at TA = +25°C, with low 1.4–2.4 V gate threshold voltage and 0.6 mm profile-ideal for space-constrained power switching in engine control units and body electronics.
For engineers reviewing the DMN4020LFDEQ-13 datasheet, DMN4020LFDEQ-13 pinout, DMN4020LFDEQ-13 application, or DMN4020LFDEQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 21 mΩ on-resistance at 10 V drive, 4.5 V logic-level compatibility, thermal resistance of 53.3 °C/W (with 1-inch² pad), and U-DFN2020-6 footprint suitability for high-density automotive PCB layouts.
Technical Context
This MOSFET employs planar trench-gate technology optimized for low RDS(ON) and fast switching in 12 V automotive systems. Its gate threshold voltage range (1.4–2.4 V) ensures reliable turn-on with standard microcontroller GPIOs, while the 12.7 nC total gate charge at 4.5 V enables efficient PWM control at frequencies up to 500 kHz.
The device integrates a robust body diode with 17.5 ns reverse recovery time and 8.9 nC QRR, supporting synchronous rectification and flyback snubbing. Thermal design is supported by dual RθJA ratings: 147.6 °C/W (minimum pad) and 53.3 °C/W (1-inch² copper), enabling scalable power handling from 0.85 W to 2.35 W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Supports 12 V automotive battery systems with 3× transient margin against load dump spikes. |
| RDS(ON) | 21 mΩ @ VGS = 10 V - Enables ≤1.8 W conduction loss at 9 A, critical for thermally constrained ECUs. |
| ID (max) | 8.6 A @ TA = +25°C - Sustains peak currents in motor drivers and solenoid controls without derating. |
| VGS(TH) | 1.4–2.4 V - Ensures full enhancement with 3.3 V or 5 V logic-level gate drive, eliminating need for level shifters. |
| Qg | 12.7 nC @ VGS = 4.5 V - Reduces gate driver power consumption and switching losses in 100–300 kHz DC/DC converters. |
| RθJA | 53.3 °C/W (1-inch² pad) - Allows 2.35 W continuous dissipation at ambient ≤70°C, suitable for sealed enclosures. |
| Ciss | 1201 pF - Predictable input capacitance simplifies gate drive loop stability analysis in high-side switch designs. |
Pinout & Package
Package: U-DFN2020-6 (Type E), 2.0 × 2.0 × 0.6 mm, bottom-exposed thermal pad, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring ≤2.4 V to fully enhance; low 1.3 Ω gate resistance minimizes ringing in high-speed switching. |
| 2 (S) | Source | Reference node for gate drive; tied to PCB ground plane to minimize common-source inductance in high-di/dt paths. |
| 3 (D) | Drain | High-current output node; connected to load or supply rail; internal bond wires rated for 40 A pulsed current. |
| 4 (S) | Source | Second source connection-electrically identical to Pin 2-reduces package inductance and improves thermal spreading. |
| 5 (D) | Drain | Second drain connection-electrically identical to Pin 3-lowers RDS(ON) by parallel bonding and enhances current sharing. |
| 6 (Thermal Pad) | Exposed Drain | Internally connected to drain; must be soldered to ≥1-inch² copper pour for RθJA = 53.3 °C/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into ultra-thin modules such as ADAS camera housings and compact junction boxes where Z-height is constrained to <1.0 mm. |
| 4 mm² PCB footprint | Reduces board area by 65% vs. SO-8 equivalents, allowing higher channel density in multi-switch power distribution units. |
| AEC-Q101 qualification | Validated for automotive temperature cycling (−55°C to +150°C), HTRB, and UIS stress-required for under-hood ECU deployment. |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and IATF 16949 manufacturing-ensures supply chain continuity for Tier 1 OEM programs. |
| Low RDS(ON) at 4.5 V | 28 mΩ at VGS = 4.5 V supports direct MCU drive in 5 V systems without gate boosters, reducing BOM count. |
Applications
| Engine Control Unit (ECU) Load Switching | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: High-side switching of fuel injector solenoids and ignition coils in gasoline direct injection systems. IC Role / Device Role / Timing Role: Power switch controlling 12 V loads with 10–20 ms pulse widths and 10 A peak current. Use Value: 21 mΩ RDS(ON) limits conduction loss to <2.1 W at 9 A, enabling passive cooling in sealed ECU enclosures. |
Use Scenario: Low-side switching of interior lighting LEDs and window lift motors in centralized BCM architectures. IC Role / Device Role / Timing Role: Logic-level N-channel switch driven directly by 3.3 V microcontroller GPIOs. Use Value: 1.4–2.4 V VGS(TH) ensures full enhancement at 3.3 V, eliminating external level-shifting circuitry. |
| Advanced Driver Assistance Systems (ADAS) Camera Power | Electric Power Steering (EPS) Motor Driver Stage |
|
Use Scenario: Reverse-polarity protection and hot-swap control for 5 V/3.3 V imaging sensor rails in surround-view camera modules. IC Role / Device Role / Timing Role: Back-to-back configured high-side switch providing fault-tolerant input protection. Use Value: 0.6 mm height allows placement beneath compact camera lens barrels; 4 mm² footprint fits tight flex-rigid PCB zones. |
Use Scenario: Half-bridge high-side switch in 12 V EPS motor gate driver IC auxiliary supplies. IC Role / Device Role / Timing Role: Fast-switching power FET with 8.9 ns fall time and 17 ns off-delay for precise PWM timing. Use Value: 12.7 nC Qg at 4.5 V reduces gate driver IC power consumption by 35% vs. comparable 25 mΩ parts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC028N06NS3 G | 60 V VDSS, 2.8 mΩ RDS(ON) @ 10 V, PG-TSDSON-8 package (3.3 × 3.3 mm) | Larger footprint and higher voltage rating suit 48 V mild-hybrid systems-not drop-in for 12 V space-constrained designs. | Select when higher voltage margin or lower on-resistance justifies 2.7× larger PCB area and requalification. |
| Vishay SI2302DS-T1-BE3 | 20 V VDSS, 35 mΩ RDS(ON) @ 4.5 V, SOT-23 package, non-AEC-Q101 | Lower voltage rating and no automotive qualification restrict use to non-safety-critical consumer-grade modules. | Accept only for cost-sensitive, non-automotive prototypes where AEC-Q101 compliance is not required. |
Compared with BSC028N06NS3G and SI2302DS-T1-BE3, the DMN4020LFDEQ-13 uniquely balances AEC-Q101 compliance, 40 V rating, 21 mΩ on-resistance, and 2.0 × 2.0 mm footprint-making it the only qualified option for space-limited 12 V automotive switches requiring production release.
Availability
DMN4020LFDEQ-13 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, ADAS camera power management, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.
Supply support for DMN4020LFDEQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMN4020LFDEQ-13 belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-reliability 12 V vehicle subsystems including power distribution, motor control, and lighting-where AEC-Q101 validation and PPAP readiness are mandatory.
FAQ
Is DMN4020LFDEQ-13 pin-compatible with other U-DFN2020-6 MOSFETs?
No-pin assignment follows Diodes' proprietary U-DFN2020-6 Type E layout: Pins 1 (G), 2/4 (S), 3/5 (D), and exposed thermal pad (D). Competing U-DFN2020-6 parts may assign gate/source/drain differently; physical verification against DS42203 Rev. 2–2 is required before substitution.
What is the maximum allowable PCB trace width for the thermal pad connection?
The thermal pad must connect to ≥1-inch² solid copper pour using at least eight 0.3 mm diameter thermal vias spaced evenly beneath the pad. Narrow traces or insufficient vias increase RθJA beyond 53.3 °C/W, risking thermal shutdown at >1.5 W continuous dissipation.
Does DMN4020LFDEQ-13 support paralleling for higher current handling?
Yes-its positive temperature coefficient of RDS(ON) (Figure 6) ensures inherent current sharing. When paralleled, maintain matched gate drive impedance and symmetric PCB layout; derate total current by 15% to account for thermal coupling between adjacent devices.
Can DMN4020LFDEQ-13 be used in linear mode (non-switching) applications?
No-it is characterized and qualified only for switching operation. Safe Operating Area (SOA) curves (Figure 12) show limited DC capability (≤0.85 W at TA = +25°C); linear-mode use risks thermal runaway due to lack of SOA derating data beyond single-pulse conditions.
DMN4020LFDEQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1201 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 850mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMN4020LFDEQ-13 FAQ
1.How can I place an order for DMN4020LFDEQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN4020LFDEQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN4020LFDEQ-13 reliable?
The price and inventory of DMN4020LFDEQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4020LFDEQ-13 is usually 5 days.
3.What payment methods are accepted for DMN4020LFDEQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4020LFDEQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN4020LFDEQ-13?
DMN4020LFDEQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN4020LFDEQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN4020LFDEQ-13?
For technical support, including DMN4020LFDEQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4020LFDEQ-13 requirements.
6.How does Aetrix verify that DMN4020LFDEQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN4020LFDEQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4020LFDEQ-13 meets industry standards.
7.What is the process for return or replacement of DMN4020LFDEQ-13?
All DMN4020LFDEQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4020LFDEQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN4020LFDEQ-13 part is unused and in its original packaging.
Return procedure for DMN4020LFDEQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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