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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN4020LFDEQ-7

Name: DMN4020LFDEQ-7
Brand: Diodes Incorporated
SKU: DMN4020LFDEQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN4020LFDEQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-PowerUDFN

Datasheet:: DMN4020LFDEQ-7.pdf

Description:: MOSFET BVDSS: 31V~40V U-DFN2020-

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN4020LFDEQ-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET with 21 mΩ R_DS(ON) at V_GS = 10 V, 8.6 A continuous drain current at T_A = +25°C, and AEC-Q101 qualification for automotive power switching in low-profile, high-density PCB layouts.

For engineers reviewing the DMN4020LFDEQ-7 datasheet, DMN4020LFDEQ-7 pinout, DMN4020LFDEQ-7 application, or DMN4020LFDEQ-7 equivalent, key selection criteria include its U-DFN2020-6 (Type E) package, 0.6 mm profile, low gate threshold (1.4–2.4 V), 28 mΩ R_DS(ON) at 4.5 V drive, and IATF 16949 manufacturing compliance.

Technical Context

This MOSFET operates as a single N-channel silicon switch optimized for automotive-grade DC-DC converter synchronous rectification and load switching. Its low R_DS(ON) at 4.5 V gate drive enables compatibility with 3.3 V and 5 V logic controllers, while its 1201 pF C_iss and 58 pF Crss support fast switching with controlled dV/dt.

The device integrates an intrinsic body diode with 0.7 V forward voltage at 1 A and supports avalanche energy of 25 mJ (L = 0.1 mH). Thermal resistance is 53.3 °C/W (R_θJA) under 1-inch² pad layout, enabling 2.35 W power dissipation at T_A = +25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V automotive rail protection and buck converter high-side use.
R_DS(ON) @ 10 V	21 mΩ max - Enables ≤1.7 W conduction loss at 8.6 A, critical for thermal management in confined spaces.
R_DS(ON) @ 4.5 V	28 mΩ max - Ensures reliable turn-on with standard microcontroller GPIOs without level-shifting.
Q_g @ 10 V	25.3 nC - Determines gate driver current requirement (~2.5 mA avg for 1 MHz switching).
T_J Range	−55 to +150 °C - Supports engine bay and under-hood deployment per AEC-Q101 stress test requirements.
C_iss	1201 pF - Sets input capacitance for gate drive loop stability and Miller effect control.
V_GS(TH)	1.4–2.4 V - Guarantees turn-on with 3.3 V logic while minimizing false triggering from noise.

Pinout & Package

Package: U-DFN2020-6 (Type E), 2.0 × 2.0 × 0.6 mm, molded green plastic (UL 94V-0), NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for channel current	Internally connected to exposed thermal pad; must be soldered to PCB ground plane for thermal and electrical performance.
2 (Gate)	Control terminal for channel conduction	Low-threshold input requiring <2.4 V to fully enhance; sensitive to ESD-requires series resistor in layout.
3 (Drain)	Main power output node	High-voltage side connection; electrically isolated from package backside; routed away from sensitive analog traces.
4 (Source)	Redundant source connection	Parallel path to Pin 1 to reduce source inductance and improve switching consistency in high-di/dt applications.
5 (Drain)	Redundant drain connection	Second drain terminal to lower package inductance and distribute current in high-frequency switching nodes.
6 (Source)	Third source connection	Completes 3-source configuration for lowest possible R_DS(ON) and thermal resistance to PCB.

Key Features

Feature	Design Value
0.6 mm profile	Enables stacking with adjacent components in space-constrained ADAS modules and battery management systems.
4 mm² footprint	Reduces PCB area by >40% vs. SO-8 equivalents, supporting miniaturized power stages in compact ECUs.
AEC-Q101 qualified	Validated for automotive temperature cycling, HTRB, and ESD robustness-no additional qualification needed for Tier-1 designs.
Lead-free & halogen-free	Complies with RoHS 3 and automotive "Green" standards (<900 ppm Br+Cl, <1000 ppm Sb), simplifying end-of-life compliance.
IATF 16949 manufacturing	Ensures PPAP-ready traceability, change control, and process stability for production ramp in OEM supply chains.

Applications

Body Control Module Load Switching

Automotive LED Headlamp Driver

Use Scenario: Controlling 12 V accessory loads (e.g., door locks, window motors) with PWM dimming and overcurrent shutdown.

IC Role / Device Role / Timing Role: Low-side switching MOSFET driven by MCU GPIO; handles up to 8.6 A pulsed loads with fast t_F = 8.9 ns fall time.

Use Value: 28 mΩ R_DS(ON) at 4.5 V ensures minimal voltage drop and heat generation during extended duty cycles in cabin environments.

Use Scenario: Synchronous rectification in 48 V–12 V DC-DC converters powering adaptive front lighting systems.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–500 kHz with low Q_gd/Q_gs ratio (0.79) for reduced switching loss.

Use Value: 25.3 nC total gate charge enables efficient drive with low-power gate drivers, reducing system BOM cost and board space.

Engine Control Unit Power Management

Electric Power Steering Motor Driver

Use Scenario: Isolating auxiliary power rails (e.g., sensor bias, CAN transceiver VCC) with reverse polarity and short-circuit protection.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch with integrated body diode; withstands −55 to +150 °C junction temperature swings.

Use Value: 22.4 A avalanche current rating allows safe clamping of inductive kickback from solenoid drivers without external TVS.

Use Scenario: Half-bridge leg in 3-phase motor gate driver IC auxiliary supply regulation and fault isolation circuits.

IC Role / Device Role / Timing Role: Fast-switching discrete FET used in bootstrap circuitry and current-sense shunt switching paths.

Use Value: 147.6 °C/W R_θJA (min pad) and 6.9 °C/W R_θJC enable direct thermal coupling to heatsink via exposed pad-critical for sustained 6.9 A operation at T_A = +70°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LFD-7	30 V V_DSS, 20 mΩ R_DS(ON) @ 4.5 V, same U-DFN2020-6 package	Limited to 12 V systems; lower voltage margin than DMN4020LFDEQ-7's 40 V rating	Select when design operates strictly below 30 V and prioritizes lowest on-resistance at 4.5 V.
NTMFS4C08NT1G	40 V V_DSS, 2.9 mΩ R_DS(ON) @ 10 V, SO-8 package, higher thermal mass	Larger footprint (5.1 × 6.2 mm), not suitable for ultra-dense layouts; better for high-current, low-frequency use	Choose when board space permits larger package and thermal performance outweighs size constraints.

Compared with DMN3020LFD-7, DMN4020LFDEQ-7 provides 33% higher voltage headroom for transient suppression in 24 V commercial vehicles; versus NTMFS4C08NT1G, it trades 1.4× higher R_DS(ON) for 65% smaller footprint and 0.6 mm height-ideal for stacked multi-layer automotive modules.

Availability

DMN4020LFDEQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting drivers, engine control units, and electric power steering systems requiring stable component supply across long production lifecycles.

Supply support for DMN4020LFDEQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, computing, and consumer markets.

The DMN4020LFDEQ-7 belongs to Diodes' AEC-Q101-qualified U-DFN power MOSFET product line, engineered specifically for high-reliability, space-constrained automotive power switching where low profile, thermal efficiency, and PPAP readiness are mandatory.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN4020LFDEQ-7 supports 6.9 A continuous drain current at T_A = +70°C with 1-inch² copper pad layout (PD = 1.5 W, R_θJA = 53.3 °C/W). Derating is linear down to zero at +150°C junction temperature. This rating assumes proper PCB thermal vias under the exposed source pad and no airflow.

Is the U-DFN2020-6 (Type E) package compatible with standard reflow profiles?

Yes-the U-DFN2020-6 (Type E) package is rated for moisture sensitivity level 1 (MSL-1) and supports JEDEC J-STD-020D-compliant lead-free reflow profiles with peak temperatures up to 260°C. The NiPdAu finish ensures reliable solderability per MIL-STD-202, Method 208, and eliminates post-reflow cleaning requirements.

Does this MOSFET require a gate resistor for automotive EMI compliance?

A 10 Ω series gate resistor is recommended to dampen ringing caused by 58 pF Crss and parasitic PCB inductance, especially in 200–500 kHz switching applications. This reduces dV/dt-induced radiated emissions and prevents false turn-on from crosstalk-critical for CISPR 25 Class 5 compliance in vehicle subsystems.

How does the body diode performance compare to external Schottky diodes?

The intrinsic body diode has V_SD = 0.7 V at 1 A and t_RR = 17.5 ns, making it suitable for synchronous rectification but less efficient than a 0.4 V Schottky in low-V_DS applications. Its Q_RR = 8.9 nC is low enough to avoid significant tail current loss in 200–300 kHz converters, eliminating need for external diode in many cost-sensitive automotive designs.

DMN4020LFDEQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-PowerUDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1201 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 850mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type E)

DMN4020LFDEQ-7 FAQ

1.How can I place an order for DMN4020LFDEQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN4020LFDEQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN4020LFDEQ-7 reliable?

The price and inventory of DMN4020LFDEQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4020LFDEQ-7 is usually 5 days.

3.What payment methods are accepted for DMN4020LFDEQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4020LFDEQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN4020LFDEQ-7?

DMN4020LFDEQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN4020LFDEQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN4020LFDEQ-7?

For technical support, including DMN4020LFDEQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4020LFDEQ-7 requirements.

6.How does Aetrix verify that DMN4020LFDEQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN4020LFDEQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4020LFDEQ-7 meets industry standards.

7.What is the process for return or replacement of DMN4020LFDEQ-7?

All DMN4020LFDEQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4020LFDEQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN4020LFDEQ-7 part is unused and in its original packaging.

Return procedure for DMN4020LFDEQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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