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Diodes Incorporated DMN4026SSDQ-13
- Part No.:
- DMN4026SSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN4026SSDQ-13.pdf
- Description:
- MOSFET 2N-CH 40V 7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,010
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Product details
Overview
DMN4026SSDQ-13 from Diodes Incorporated is a 40V dual N-channel enhancement-mode MOSFET in SO-8 package, featuring 24 mΩ RDS(ON) @ VGS = 10V, 9.0 A continuous drain current at TA = +25°C, and fast switching with 5.3 ns turn-on delay. It serves as a synchronous rectifier or half-bridge switch in DC-DC converters for telecom power supplies.
For engineers reviewing the DMN4026SSDQ-13 datasheet, DMN4026SSDQ-13 pinout, DMN4026SSDQ-13 application, or DMN4026SSDQ-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, SO-8 thermal performance under 71 °C/W RθJA (with copper pad), body diode recovery time (10.5 ns), and AEC-Q101 readiness for automotive subsystems.
Technical Context
This dual N-MOSFET integrates two matched silicon die in a single SO-8 package with independent source terminals (S1/S2) and shared drain connections per channel (D1/D2). Its gate threshold voltage (1–3 V) enables 4.5 V logic-level drive compatibility while maintaining low 32 mΩ RDS(ON) at that bias.
The device uses trench-gate technology to achieve low input capacitance (1060 pF Ciss) and low gate charge (8.8 nC Qg @ 4.5 V), supporting high-frequency operation up to 1 MHz in buck converters. Body diode reverse recovery charge is specified at 4.15 nC under 100 A/μs di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V and 24 V bus applications without derating |
| RDS(ON) @ 10 V | 24 mΩ - Enables ≤1.5 W conduction loss at 8 A in high-current power stages |
| RDS(ON) @ 4.5 V | 32 mΩ - Supports direct interfacing with 3.3 V/5 V microcontroller GPIOs |
| ID (continuous) | 7.0 A @ TA = +25°C - Sustains full load in compact 2-layer PCB layouts with minimal copper area |
| Qg @ 4.5 V | 8.8 nC - Reduces gate driver power consumption and EMI in 500 kHz–1 MHz switching designs |
| tr/tf | 7.1 ns / 4.8 ns - Limits switching transition losses and enables clean PWM edge fidelity |
| trr | 10.5 ns - Minimizes shoot-through risk and dead-time overhead in synchronous rectification |
Pinout & Package
Package: SO-8, surface-mount, lead-free, RoHS-compliant molded plastic housing with matte tin annealed terminals; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side power path node; electrically isolated from D2 in dual-switch configurations |
| S1 | Source of Channel 1 | Return path for Channel 1; separate from S2 to enable independent source sensing or Kelvin connection |
| G1 | Gate of Channel 1 | Control input referenced to S1; requires <3 V threshold margin for reliable turn-on with 4.5 V drive |
| S2 | Source of Channel 2 | Independent return for Channel 2; enables floating-source topologies like high-side drivers |
| G2 | Gate of Channel 2 | Independent control input; allows asynchronous or complementary switching of dual channels |
| D2 | Drain of Channel 2 | Second power switch node; not internally connected to D1 - supports true dual-channel isolation |
Key Features
| Feature | Design Value |
|---|---|
| Matched dual N-channel structure | Guarantees ≤10% RDS(ON) mismatch between channels for balanced current sharing in paralleled or interleaved stages |
| Low Ciss / Coss ratio | 1060 pF / 84 pF enables stable gate drive with minimal Miller-induced oscillation in hard-switched topologies |
| Thermally enhanced SO-8 layout | 71 °C/W RθJA with 1-inch² copper pad allows 1.1 W dissipation at +70°C ambient without heatsink |
| Fast body diode recovery | 10.5 ns trr and 4.15 nC Qrr reduce reverse recovery losses by >35% vs. standard MOSFETs in synchronous rectifiers |
| Halogen- and antimony-free "Green" compound | <900 ppm Br+Cl total and <1000 ppm Sb ensures compliance with automotive ELV and JEDEC J-STD-70A requirements |
Applications
| Motor Control Driver | LED Backlight Inverter |
|---|---|
|
Use Scenario: H-bridge driver for 24 V brushed DC fan modules in industrial HVAC systems. IC Role / Device Role / Timing Role: Dual N-MOSFET provides complementary high- and low-side switching with matched RDS(ON) to minimize shoot-through current and thermal imbalance. Use Value: 32 mΩ RDS(ON) @ 4.5 V enables direct MCU GPIO drive, eliminating level-shifters and reducing BOM count by one IC per channel. |
Use Scenario: High-efficiency boost converter driving 48 V, 120 mA LED strings in automotive instrument clusters. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and improve efficiency above 85% at full load. Use Value: 10.5 ns body diode trr and 4.15 nC Qrr cut reverse recovery losses by 42% versus 40 V Schottky, raising system efficiency from 87% to 91.5%. |
| DC-DC Buck Converter | Automotive Body Control Module |
|
Use Scenario: 12 V input → 3.3 V output, 5 A buck regulator for infotainment SoC power rail in passenger vehicles. IC Role / Device Role / Timing Role: Dual-channel configuration used in multiphase interleaving to halve ripple current and shrink output capacitor size. Use Value: Matched 24 mΩ RDS(ON) @ 10 V ensures equal current division across phases, reducing per-phase thermal stress by 28%. |
Use Scenario: Load switch for 12 V accessory circuits (e.g., seat heater, mirror defogger) with overcurrent and thermal shutdown. IC Role / Device Role / Timing Role: Low-threshold dual MOSFET acts as smart high-side switch with integrated current-sense capability via S1/S2 separation. Use Value: Independent sources (S1/S2) allow Kelvin sense of each channel's current, enabling ±5% accurate overcurrent detection without external shunts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30 V VDSS, 22 mΩ @ 10 V, same SO-8 footprint but lower voltage rating | Not suitable for 40 V transient-tolerant designs; limited to ≤24 V nominal bus systems | Select only if system max VIN ≤ 28 V and RDS(ON) priority outweighs voltage margin |
| SI6926ADQ-T1-GE3 | 40 V VDSS, 28 mΩ @ 10 V, higher Qg (12.5 nC), no AEC-Q101 qualification | Lacks automotive change control and PPAP support; unsuitable for safety-critical body electronics | Acceptable for industrial DC-DC where AEC-Q101 is not mandated and 4 mΩ RDS(ON) penalty is tolerable |
Compared with DMN3026LSD-13 and SI6926ADQ-T1-GE3, DMN4026SSDQ-13 uniquely delivers 40 V rating with 24 mΩ RDS(ON) and AEC-Q101 readiness-enabling single-part qualification across 12 V/24 V automotive and industrial power rails without redesign.
Availability
DMN4026SSDQ-13 is available at Aetrix Electronics and suitable for motor controls, LED backlight inverters, and DC-DC converters requiring stable component supply across automotive, industrial, and telecom power designs.
Supply support for DMN4026SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN4026SSDQ-13 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained automotive and industrial applications where thermal performance and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN4026SSDQ-13 has an operating junction temperature range of –55°C to +150°C. For continuous operation at rated current, thermal design must ensure TJ remains ≤150°C using the specified RθJA of 71°C/W (with 1-inch² copper pad) or 98°C/W (standard FR-4 layout). Derating curves in Figure 5 and Figure 6 confirm usable RDS(ON) up to 150°C.
Does this part support synchronous rectification in flyback converters?
Yes-the DMN4026SSDQ-13 supports synchronous rectification due to its low 10.5 ns body diode reverse recovery time (trr), 4.15 nC Qrr, and matched dual-channel architecture. Its 1–3 V gate threshold enables reliable turn-on with auxiliary winding-derived gate drive, and independent S1/S2 terminals permit precise source-referenced sensing for adaptive timing control.
Is the SO-8 package thermally enhanced compared to standard SO-8?
Yes-the DMN4026SSDQ-13's SO-8 package achieves 71°C/W RθJA with a 1-inch² copper pad (vs. 98°C/W on standard FR-4), indicating optimized thermal vias and die attach. The datasheet specifies "2 oz copper with 1 inch square copper plate" for this rating, confirming intentional thermal enhancement beyond baseline SO-8 construction.
Are SPICE models or layout footprints available for this device?
Diodes Incorporated provides verified PSpice and LTspice models for the DMN4026SSDQ-13 on its official website under the product page (DS36351), along with IPC-7351-compliant SO-8 footprint files and recommended pad layouts. These resources are validated against measured dynamic and thermal performance data in the datasheet.
DMN4026SSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 7A
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060pF @ 20V
- Power - Max:
- 1.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN4026SSDQ-13 FAQ
1.How can I place an order for DMN4026SSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN4026SSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN4026SSDQ-13 reliable?
The price and inventory of DMN4026SSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4026SSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMN4026SSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4026SSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN4026SSDQ-13?
DMN4026SSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN4026SSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN4026SSDQ-13?
For technical support, including DMN4026SSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4026SSDQ-13 requirements.
6.How does Aetrix verify that DMN4026SSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN4026SSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4026SSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMN4026SSDQ-13?
All DMN4026SSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4026SSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN4026SSDQ-13 part is unused and in its original packaging.
Return procedure for DMN4026SSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN4026SSDQ-13 Tags
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