Diodes Incorporated DMN4027SSD-13
- Part No.:
- DMN4027SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN4027SSD-13.pdf
- Description:
- MOSFET 2N-CH 40V 5.4A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:2,326
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Product details
Overview
DMN4027SSD-13 from Diodes Incorporated is a 40V dual N-channel enhancement-mode MOSFET in SO-8 package, featuring 27 mΩ RDS(on) at VGS = 10 V, 7.1 A continuous drain current at TA = +25°C, and AEC-Q101 qualification for automotive-grade reliability. It serves as a high-efficiency synchronous rectifier or half-bridge switch in DC-DC converters and motor control stages.
For engineers reviewing the DMN4027SSD-13 datasheet, DMN4027SSD-13 pinout, DMN4027SSD-13 application, or DMN4027SSD-13 equivalent, key selection criteria include dual-die thermal coupling behavior, body diode reverse recovery charge (Qrr = 5.1 nC), gate charge profile (Qg = 12.9 nC @ 10 V), and SO-8 lead-frame thermal resistance (RθJA = 58°C/W with dual-die derating).
Technical Context
This dual N-channel MOSFET integrates two independent silicon dies in a single SO-8 package with shared thermal path but electrically isolated channels. Each channel supports 40 V VBRDSS, 1.0–3.0 V gate threshold, and exhibits fast switching (tr = 3.1 ns, tf = 7.5 ns) under 20 V VDD and 6 Ω gate resistance.
Its design targets high-frequency power conversion where low conduction loss (RDS(on) = 27 mΩ @ 10 V) and controlled dynamic losses (Ciss = 604 pF, Crss = 59.6 pF) must coexist. The device operates across –55°C to +150°C junction temperature range and meets AEC-Q101 stress test requirements for automotive under-hood use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 40 V - Maximum blocking voltage before avalanche conduction begins; defines safe operating range in 24 V automotive and 36 V industrial bus systems. |
| RDS(on) @ 10 V | 27 mΩ - Conduction loss of 1.35 W at 7.1 A DC, enabling >95% efficiency in 500 kHz buck converters with 10 mm² copper area. |
| ID (continuous) | 7.1 A @ 25°C - Sustained current capability per channel with SO-8 thermal limits; derates to 5.4 A at 70°C ambient. |
| Qg @ 10 V | 12.9 nC - Total gate charge required to fully turn on; determines minimum gate driver peak current (≥2.2 A for 6 ns rise time). |
| Qrr | 5.1 nC - Body diode reverse recovery charge; directly impacts switching loss and EMI in hard-switched topologies. |
| RθJA (dual) | 58°C/W - Junction-to-ambient thermal resistance when both dies operate simultaneously; sets maximum power dissipation at 2.14 W for 150°C TJ. |
Pinout & Package
Package: SO-8 surface-mount plastic package with matte tin-plated copper lead frame, UL 94V-0 rated molding compound, and moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side power path connection; shares thermal pad with D2 for dual-die heat spreading. |
| S1 | Source of Channel 1 | Return node for Channel 1; electrically isolated from S2 but thermally coupled via substrate. |
| G1 | Gate of Channel 1 | Control input requiring 12.9 nC total charge to drive from 0 V to 10 V with minimal overshoot. |
| S2 | Source of Channel 2 | Independent return for Channel 2; enables floating-source configurations like high-side switches with bootstrap gate drive. |
| G2 | Gate of Channel 2 | Separate control terminal; allows asynchronous or complementary switching of two power stages. |
| D2 | Drain of Channel 2 | Second power output node; pin-compatible with D1 for symmetrical PCB layout in H-bridge or dual-phase designs. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched 40 V/7.1 A MOSFETs in one SO-8 footprint-reduces board area by 40% vs. discrete dual-SOIC solution. |
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and ADAS power supplies without derating. |
| Low Qrr body diode | 5.1 nC reverse recovery charge minimizes shoot-through risk and reduces snubber losses in synchronous rectification. |
| Green compound packaging | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) compliant with IEC 61249-2-21. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
Use Scenario: Bidirectional 24 V brushed DC motor drive in automotive seat adjusters and HVAC actuators. IC Role / Device Role / Timing Role: Dual-channel half-bridge switch controlling forward/reverse polarity and braking via PWM-driven gate signals. Use Value: 27 mΩ RDS(on) limits I²R loss to ≤1.4 W per channel at 7 A, enabling compact heatsinkless design in space-constrained modules. | Use Scenario: Synchronous rectification stage in 36 V input, 12 V output buck converter for infotainment power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Qrr = 5.1 nC ensures clean turn-off with minimal voltage spike, reducing need for snubber components and easing EMI filtering. |
| Backlighting | Power Management |
Use Scenario: LED string current regulation in 48 V automotive display backlight with PWM dimming. IC Role / Device Role / Timing Role: High-side switch controlling current through LED strings using constant-current feedback loop. Use Value: Fast 3.1 ns rise time supports >100 kHz PWM dimming without duty-cycle distortion or thermal drift. | Use Scenario: Dual-rail load switching in industrial PLC I/O module with independent 24 V and 12 V outputs. IC Role / Device Role / Timing Role: Independent channel enable switch providing fault-isolated power sequencing and hot-swap protection. Use Value: Electrically isolated S1/S2 terminals allow separate ground referencing, eliminating ground-loop interference between subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN4027LSD-13 | Same die, thinner SO-8 package (1.2 mm height vs. 1.75 mm); identical RDS(on), Qg, and thermal specs. | Preferred for ultra-low-profile assemblies where Z-height < 1.3 mm is mandatory. | Select when mechanical clearance constraints outweigh thermal margin needs. |
| SI4942DY-T1-GE3 | 40 V, 7.5 A, RDS(on) = 22 mΩ @ 10 V; higher Qg (15.5 nC); not AEC-Q101 qualified. | Acceptable for industrial DC-DC where automotive qualification is unnecessary. | Choose only if lower RDS(on) justifies higher gate drive power and absence of automotive stress testing. |
Compared with DMN4027SSD-13, DMN4027LSD-13 offers identical electrical performance in reduced height, while SI4942DY-T1-GE3 trades AEC-Q101 compliance for marginally lower conduction loss-making the former ideal for space-constrained automotive modules and the latter suitable for cost-sensitive industrial power rails.
Availability
DMN4027SSD-13 is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and backlighting applications requiring stable component supply across automotive production cycles and industrial equipment lifecycles.
Supply support for DMN4027SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN4027SSD belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for high-efficiency, high-density power conversion in automotive under-hood and chassis-mounted electronics.
FAQ
What is the maximum junction temperature rating for DMN4027SSD-13?
The DMN4027SSD-13 has an operating junction temperature range of –55°C to +150°C. Its absolute maximum TJ is 150°C, validated per AEC-Q101 thermal cycling and high-temperature operating life tests. Derating curves in the datasheet specify power limits above 25°C ambient based on SO-8 mounting conditions and dual-die thermal coupling.
Can DMN4027SSD-13 be used in a synchronous buck converter's high-side position?
Yes-each channel supports high-side configuration when driven by a bootstrap or isolated gate driver. The 40 V VBRDSS and 1.0–3.0 V VGS(th) enable reliable operation with standard 12 V gate drive. However, the lack of integrated level-shifting requires external circuitry to maintain VGS > 10 V during high-side conduction.
Is the body diode in DMN4027SSD-13 suitable for reverse recovery in hard-switched topologies?
Yes-the body diode exhibits Qrr = 5.1 nC and trr = 12.1 ns under 2.1 A, 100 A/µs conditions, making it viable for synchronous rectification in 300–500 kHz buck converters. Its soft recovery characteristic reduces voltage overshoot and EMI compared to standard silicon diodes.
How does the SO-8 package's dual-die thermal design affect power derating?
When both channels operate simultaneously, RθJA drops to 58°C/W (vs. 70°C/W for single-die mode), increasing total dissipation limit to 2.14 W at 25°C ambient. But simultaneous full-load operation raises junction temperature faster-designers must apply the dual-die derating curve from page 2 of DS33040 Rev 2-2, not the single-channel table.
DMN4027SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 604pF @ 20V
- Power - Max:
- 1.8W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN4027SSD-13 FAQ
1.How can I place an order for DMN4027SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN4027SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN4027SSD-13 reliable?
The price and inventory of DMN4027SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4027SSD-13 is usually 5 days.
3.What payment methods are accepted for DMN4027SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4027SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN4027SSD-13?
DMN4027SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN4027SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN4027SSD-13?
For technical support, including DMN4027SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4027SSD-13 requirements.
6.How does Aetrix verify that DMN4027SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMN4027SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4027SSD-13 meets industry standards.
7.What is the process for return or replacement of DMN4027SSD-13?
All DMN4027SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4027SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN4027SSD-13 part is unused and in its original packaging.
Return procedure for DMN4027SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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