Diodes Incorporated DMN4030LK3-13

Overview

DMN4030LK3-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring R_DS(ON) = 30 mΩ @ V_GS = 10 V and 50 mΩ @ V_GS = 4.5 V, rated for 9.6 A continuous drain current at T_A = +25°C. It delivers low conduction loss and fast switching (t_R = 12.4 ns, t_F = 10.7 ns), optimized for DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMN4030LK3-13 datasheet, DMN4030LK3-13 pinout, DMN4030LK3-13 application, or DMN4030LK3-13 equivalent, key selection criteria include its 40V V_DSS, 2.46°C/W R_θJC, body diode recovery charge Q_RR = 799 nC, and JEDEC-qualified reliability for industrial power management designs.

Technical Context

This MOSFET employs planar trench-gate technology to balance low R_DS(ON) and controlled gate charge (Q_g = 12.9 nC @ V_GS = 10 V). Its 604 pF C_iss and 59.6 pF Cr_ss support stable high-frequency operation up to 1 MHz in synchronous buck topologies.

The device integrates a robust body diode with t_RR = 135 ns and V_SD = 0.95–1.1 V, enabling efficient freewheeling in non-isolated converters without external Schottky supplementation. Thermal design leverages its 2.46°C/W R_θJC for direct heatsink mounting via the exposed drain pad.

Key Specifications

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), lead-free, halogen- and antimony-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMN4030LK3-13, the DMN4030LK3Q adds automotive compliance without electrical trade-offs, while the DMN3029LSD-13 offers lower R_DS(ON) at reduced voltage rating-making it unsuitable as a drop-in replacement in 40 V systems but viable for 24 V industrial converters prioritizing conduction loss.

Availability

DMN4030LK3-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and industrial power management applications requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant green packaging.

Supply support for DMN4030LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN4030LK3-13 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, medium-voltage power conversion in industrial, computing, and consumer power supplies.

FAQ

What is the maximum continuous drain current for DMN4030LK3-13 at 70°C ambient?

The maximum continuous drain current is 7.7 A at T_A = +70°C with a 50 mm × 50 mm × 1.6 mm FR-4 PCB and 2 oz copper. This derating reflects thermal limits imposed by R_θJA = 29.9°C/W under specified board conditions-not an intrinsic device limit but a validated PCB-level performance value.

Does DMN4030LK3-13 support logic-level gate drive?

Yes. With R_DS(ON) = 50 mΩ at V_GS = 4.5 V and V_GS(TH) = 1–3 V, it fully enhances using standard 5 V logic outputs or 3.3 V microcontroller GPIOs with appropriate series gate resistance (typically 10–22 Ω) to control dI/dt and EMI.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.95–1.1 V and Q_RR = 799 nC at 12 A, offering lower forward drop than silicon PN diodes but higher than Schottky. It eliminates external component count in synchronous rectifiers where moderate recovery loss is acceptable-no external Schottky is needed unless <0.5 V V_F or sub-100 nC Q_RR is required.

Is thermal pad soldering required for reliable operation?

Yes. The exposed drain pad is the primary thermal path (R_θJC = 2.46°C/W). Reliable thermal performance requires full-solder coverage of the pad to ≥1 in² (6.5 cm²) of 2 oz internal or external copper, per Diodes' recommended footprint. Omitting pad soldering increases R_θJA to 58.4°C/W, limiting usable power to ~0.7 W at +25°C ambient.