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Diodes Incorporated DMN4035L-13

Part No.:
DMN4035L-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMN4035L-13.pdf
Description:
MOSFET N-CH 40V 4.6A SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,476

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Product details

Overview

DMN4035L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 40V VDSS, 42 mΩ RDS(ON) @ 10V VGS, and 4.6A continuous drain current - optimized for high-efficiency DC-DC converters and portable power adaptors where low conduction loss and fast switching are critical.

For engineers reviewing the DMN4035L-13 datasheet, DMN4035L-13 pinout, DMN4035L-13 application, or DMN4035L-13 equivalent, key selection criteria include its 4.5V gate drive compatibility (52 mΩ RDS(ON)), 574 pF Ciss, 12.5 nC total gate charge at 10V, thermal resistance of 93°C/W under enhanced layout, and JEDEC-qualified reliability for industrial power management designs.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining controlled Qg (12.5 nC @ 10V) and fast switching (tr = 2.6 ns, tf = 5.5 ns). Its VGS(TH) range (1–3 V) ensures robust turn-on with standard logic-level drivers.

Designed for unidirectional power switching in synchronous buck topologies, it integrates a body diode with VSD = 0.7–1.1 V @ 1.25 A and tRR = 6.5 ns, enabling efficient freewheeling in compact DC-DC stages without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Maximum blocking voltage in high-side or low-side switch configurations without avalanche breakdown.
RDS(ON) 42 mΩ @ VGS = 10 V, ID = 4.3 A - Enables ≤180 mW conduction loss at 4.6 A, critical for thermally constrained portable designs.
ID (continuous) 4.6 A @ TA = 25°C - Supports sustained load currents in 1–3 W power rails when mounted on 2 oz copper FR-4 with thermal bias.
Ciss 574 pF @ VDS = 20 V - Limits gate drive power requirement and enables clean switching with low-impedance 6 Ω gate resistor.
tr/tf 2.6 ns / 5.5 ns @ VDD = 20 V, RG = 6 Ω - Reduces switching transition time, minimizing overlap loss in 500 kHz–1 MHz converters.
Qg 12.5 nC @ VGS = 10 V - Determines gate driver current demand (e.g., 1.25 A peak for 10 ns rise) in high-frequency PWM control.

Pinout & Package

Package: SOT23 - surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.008 g.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Power return path for drain current Connected to ground or low-side reference; forms body diode cathode; requires low-inductance layout for EMI control.
2 (Gate) Control terminal for channel modulation High-impedance input requiring RC snubber or gate resistor (6 Ω typical) to damp ringing and limit dV/dt-induced shoot-through.
3 (Drain) Main power output node Carries switched load current; connects to inductor or input rail; must be routed with minimal loop area to reduce radiated noise.

Key Features

Feature Design Value
Low RDS(ON) at 4.5 V 52 mΩ - Enables full-load operation with 3.3 V or 5 V microcontroller GPIOs without level-shifting.
Fast switching speed tD(ON) = 3.1 ns, tF = 5.5 ns - Reduces energy loss per cycle in high-frequency DC-DC regulators (≥1 MHz).
Low gate charge Qg = 5.9 nC @ 4.5 V - Lowers average gate drive power, easing thermal design for integrated FET controllers.
JEDEC-qualified reliability Qualified to AEC-Q standards for high-reliability industrial use - supports long-term deployment in non-automotive embedded power systems.

Applications

Battery Charging Circuits USB-C Power Delivery Adaptors

Use Scenario: Synchronous rectification in 5–20 V, 3–5 A battery charging paths for Li-ion packs in portable medical devices.

IC Role / Device Role: Low-side switch replacing Schottky diode to reduce forward drop and improve efficiency by ≥8% at 3 A.

Use Value: 42 mΩ RDS(ON) cuts conduction loss to <190 mW vs. >500 mW for 40 V/3 A Schottky, extending runtime and reducing thermal pad area.

Use Scenario: Output-side power switch in compact 27 W USB-C PD adaptors with 9 V/3 A or 15 V/1.8 A profiles.

IC Role / Device Role: Secondary-side synchronous FET in flyback or active-clamp forward topology.

Use Value: 574 pF Ciss and 12.5 nC Qg allow clean 600 kHz switching with minimal gate drive loss, supporting >92% peak efficiency.

Point-of-Load DC-DC Converters Portable Power Bank Management

Use Scenario: High-side switch in 12 V input → 3.3 V/5 V buck converters for FPGA I/O banks or sensor subsystems.

IC Role / Device Role: Main switching element in discrete or controller-based buck stage operating at 1–2 MHz.

Use Value: 2.6 ns rise time and 5.5 ns fall time minimize dead-time losses, enabling stable regulation under dynamic 10 A/μs load transients.

Use Scenario: Load switch between Li-ion cell and USB OTG output port in dual-role power banks.

IC Role / Device Role: Reverse-current blocking and soft-start controlled power path switch.

Use Value: VGS(TH) = 1–3 V ensures reliable turn-on with 3.3 V system rail; 1.5 A body diode rating supports safe reverse-conduction during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3029L-13 30 V VDSS, 29 mΩ RDS(ON) @ 10 V, same SOT23 package Lower voltage rating limits use to ≤24 V systems; better RDS(ON) improves efficiency below 30 V but sacrifices 40 V margin. Select when input voltage is strictly ≤24 V and ultra-low conduction loss is prioritized over voltage headroom.
AO3400A 30 V VDSS, 42 mΩ RDS(ON) @ 10 V, 4.2 A ID, same footprint Lower continuous current rating (4.2 A vs. 4.6 A) and higher Ciss (750 pF) increase switching loss at >500 kHz. Acceptable for cost-sensitive 30 V applications with moderate frequency; verify thermal margin at full load due to 100°C/W RθJA.

Compared with DMN3029L-13 and AO3400A, DMN4035L-13 uniquely balances 40 V capability, 4.6 A current handling, and 574 pF input capacitance - making it the preferred choice for 36 V nominal input DC-DC stages where both voltage margin and high-frequency efficiency matter.

Availability

DMN4035L-13 is available at Aetrix Electronics and suitable for battery charging circuits, USB-C power delivery adaptors, and point-of-load DC-DC converters requiring stable component supply, consistent parametric performance, and JEDEC-qualified reliability across production batches.

Supply support for DMN4035L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.

DMN4035L-13 belongs to Diodes' "PowerMOS" portfolio - engineered specifically for high-efficiency, space-constrained DC-DC conversion and battery-powered systems where low RDS(ON), fast switching, and robust thermal behavior are essential.

FAQ

What is the maximum junction temperature for DMN4035L-13?

The DMN4035L-13 has a specified operating junction temperature range of –55°C to +150°C. Its absolute maximum TJ is 150°C, and thermal derating begins above 25°C ambient based on RθJA = 93°C/W under enhanced PCB layout (2 oz copper with thermal bias). Exceeding 150°C risks permanent parametric shift or failure.

Is DMN4035L-13 suitable for automotive applications?

DMN4035L-13 is not AEC-Q200 qualified. For automotive use, Diodes offers the pin-compatible DMN4035LQ variant - qualified to AEC-Q101, manufactured in IATF 16949 facilities, and PPAP-capable. The standard DMN4035L-13 is intended for industrial, computing, and consumer power management only.

What is the gate threshold voltage range, and how does it affect drive requirements?

VGS(TH) is specified from 1 V to 3 V at ID = 250 μA. This allows reliable turn-on with 3.3 V logic, but full enhancement (≤42 mΩ RDS(ON)) requires ≥10 V VGS. At 4.5 V, RDS(ON) rises to 52 mΩ - acceptable for many portable applications but necessitates verification of conduction loss versus thermal budget.

Does DMN4035L-13 have integrated ESD protection?

No integrated ESD protection structure is specified in the datasheet. The device exhibits ±20 V gate-source rating (VGSS) and ±100 nA gate leakage at ±20 V, indicating standard MOSFET gate oxide robustness - but external TVS or RC filtering is recommended on gate traces in noisy environments to prevent electrostatic damage during handling or operation.

DMN4035L-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
574 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
720mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMN4035L-13 FAQ

1.How can I place an order for DMN4035L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN4035L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN4035L-13 reliable?

The price and inventory of DMN4035L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4035L-13 is usually 5 days.

3.What payment methods are accepted for DMN4035L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4035L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN4035L-13?

DMN4035L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN4035L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN4035L-13?

For technical support, including DMN4035L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4035L-13 requirements.

6.How does Aetrix verify that DMN4035L-13 is sourced from the original manufacturer or authorized distributors?

All DMN4035L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4035L-13 meets industry standards.

7.What is the process for return or replacement of DMN4035L-13?

All DMN4035L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4035L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN4035L-13 part is unused and in its original packaging.

Return procedure for DMN4035L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN4035L-13 Tags

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