Diodes Incorporated DMN4035L-13
- Part No.:
- DMN4035L-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN4035L-13.pdf
- Description:
- MOSFET N-CH 40V 4.6A SOT23
- Quantity:
- Payment:

- Shipping:

Inventory:2,476
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Product details
Overview
DMN4035L-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 40V VDSS, 42 mΩ RDS(ON) @ 10V VGS, and 4.6A continuous drain current - optimized for high-efficiency DC-DC converters and portable power adaptors where low conduction loss and fast switching are critical.
For engineers reviewing the DMN4035L-13 datasheet, DMN4035L-13 pinout, DMN4035L-13 application, or DMN4035L-13 equivalent, key selection criteria include its 4.5V gate drive compatibility (52 mΩ RDS(ON)), 574 pF Ciss, 12.5 nC total gate charge at 10V, thermal resistance of 93°C/W under enhanced layout, and JEDEC-qualified reliability for industrial power management designs.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining controlled Qg (12.5 nC @ 10V) and fast switching (tr = 2.6 ns, tf = 5.5 ns). Its VGS(TH) range (1–3 V) ensures robust turn-on with standard logic-level drivers.
Designed for unidirectional power switching in synchronous buck topologies, it integrates a body diode with VSD = 0.7–1.1 V @ 1.25 A and tRR = 6.5 ns, enabling efficient freewheeling in compact DC-DC stages without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage in high-side or low-side switch configurations without avalanche breakdown. |
| RDS(ON) | 42 mΩ @ VGS = 10 V, ID = 4.3 A - Enables ≤180 mW conduction loss at 4.6 A, critical for thermally constrained portable designs. |
| ID (continuous) | 4.6 A @ TA = 25°C - Supports sustained load currents in 1–3 W power rails when mounted on 2 oz copper FR-4 with thermal bias. |
| Ciss | 574 pF @ VDS = 20 V - Limits gate drive power requirement and enables clean switching with low-impedance 6 Ω gate resistor. |
| tr/tf | 2.6 ns / 5.5 ns @ VDD = 20 V, RG = 6 Ω - Reduces switching transition time, minimizing overlap loss in 500 kHz–1 MHz converters. |
| Qg | 12.5 nC @ VGS = 10 V - Determines gate driver current demand (e.g., 1.25 A peak for 10 ns rise) in high-frequency PWM control. |
Pinout & Package
Package: SOT23 - surface-mount plastic package with matte tin–annealed copper leadframe, UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.008 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for drain current | Connected to ground or low-side reference; forms body diode cathode; requires low-inductance layout for EMI control. |
| 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring RC snubber or gate resistor (6 Ω typical) to damp ringing and limit dV/dt-induced shoot-through. |
| 3 (Drain) | Main power output node | Carries switched load current; connects to inductor or input rail; must be routed with minimal loop area to reduce radiated noise. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 52 mΩ - Enables full-load operation with 3.3 V or 5 V microcontroller GPIOs without level-shifting. |
| Fast switching speed | tD(ON) = 3.1 ns, tF = 5.5 ns - Reduces energy loss per cycle in high-frequency DC-DC regulators (≥1 MHz). |
| Low gate charge | Qg = 5.9 nC @ 4.5 V - Lowers average gate drive power, easing thermal design for integrated FET controllers. |
| JEDEC-qualified reliability | Qualified to AEC-Q standards for high-reliability industrial use - supports long-term deployment in non-automotive embedded power systems. |
Applications
| Battery Charging Circuits | USB-C Power Delivery Adaptors |
|---|---|
|
Use Scenario: Synchronous rectification in 5–20 V, 3–5 A battery charging paths for Li-ion packs in portable medical devices. IC Role / Device Role: Low-side switch replacing Schottky diode to reduce forward drop and improve efficiency by ≥8% at 3 A. Use Value: 42 mΩ RDS(ON) cuts conduction loss to <190 mW vs. >500 mW for 40 V/3 A Schottky, extending runtime and reducing thermal pad area. |
Use Scenario: Output-side power switch in compact 27 W USB-C PD adaptors with 9 V/3 A or 15 V/1.8 A profiles. IC Role / Device Role: Secondary-side synchronous FET in flyback or active-clamp forward topology. Use Value: 574 pF Ciss and 12.5 nC Qg allow clean 600 kHz switching with minimal gate drive loss, supporting >92% peak efficiency. |
| Point-of-Load DC-DC Converters | Portable Power Bank Management |
|
Use Scenario: High-side switch in 12 V input → 3.3 V/5 V buck converters for FPGA I/O banks or sensor subsystems. IC Role / Device Role: Main switching element in discrete or controller-based buck stage operating at 1–2 MHz. Use Value: 2.6 ns rise time and 5.5 ns fall time minimize dead-time losses, enabling stable regulation under dynamic 10 A/μs load transients. |
Use Scenario: Load switch between Li-ion cell and USB OTG output port in dual-role power banks. IC Role / Device Role: Reverse-current blocking and soft-start controlled power path switch. Use Value: VGS(TH) = 1–3 V ensures reliable turn-on with 3.3 V system rail; 1.5 A body diode rating supports safe reverse-conduction during hot-plug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3029L-13 | 30 V VDSS, 29 mΩ RDS(ON) @ 10 V, same SOT23 package | Lower voltage rating limits use to ≤24 V systems; better RDS(ON) improves efficiency below 30 V but sacrifices 40 V margin. | Select when input voltage is strictly ≤24 V and ultra-low conduction loss is prioritized over voltage headroom. |
| AO3400A | 30 V VDSS, 42 mΩ RDS(ON) @ 10 V, 4.2 A ID, same footprint | Lower continuous current rating (4.2 A vs. 4.6 A) and higher Ciss (750 pF) increase switching loss at >500 kHz. | Acceptable for cost-sensitive 30 V applications with moderate frequency; verify thermal margin at full load due to 100°C/W RθJA. |
Compared with DMN3029L-13 and AO3400A, DMN4035L-13 uniquely balances 40 V capability, 4.6 A current handling, and 574 pF input capacitance - making it the preferred choice for 36 V nominal input DC-DC stages where both voltage margin and high-frequency efficiency matter.
Availability
DMN4035L-13 is available at Aetrix Electronics and suitable for battery charging circuits, USB-C power delivery adaptors, and point-of-load DC-DC converters requiring stable component supply, consistent parametric performance, and JEDEC-qualified reliability across production batches.
Supply support for DMN4035L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.
DMN4035L-13 belongs to Diodes' "PowerMOS" portfolio - engineered specifically for high-efficiency, space-constrained DC-DC conversion and battery-powered systems where low RDS(ON), fast switching, and robust thermal behavior are essential.
FAQ
What is the maximum junction temperature for DMN4035L-13?
The DMN4035L-13 has a specified operating junction temperature range of –55°C to +150°C. Its absolute maximum TJ is 150°C, and thermal derating begins above 25°C ambient based on RθJA = 93°C/W under enhanced PCB layout (2 oz copper with thermal bias). Exceeding 150°C risks permanent parametric shift or failure.
Is DMN4035L-13 suitable for automotive applications?
DMN4035L-13 is not AEC-Q200 qualified. For automotive use, Diodes offers the pin-compatible DMN4035LQ variant - qualified to AEC-Q101, manufactured in IATF 16949 facilities, and PPAP-capable. The standard DMN4035L-13 is intended for industrial, computing, and consumer power management only.
What is the gate threshold voltage range, and how does it affect drive requirements?
VGS(TH) is specified from 1 V to 3 V at ID = 250 μA. This allows reliable turn-on with 3.3 V logic, but full enhancement (≤42 mΩ RDS(ON)) requires ≥10 V VGS. At 4.5 V, RDS(ON) rises to 52 mΩ - acceptable for many portable applications but necessitates verification of conduction loss versus thermal budget.
Does DMN4035L-13 have integrated ESD protection?
No integrated ESD protection structure is specified in the datasheet. The device exhibits ±20 V gate-source rating (VGSS) and ±100 nA gate leakage at ±20 V, indicating standard MOSFET gate oxide robustness - but external TVS or RC filtering is recommended on gate traces in noisy environments to prevent electrostatic damage during handling or operation.
DMN4035L-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 574 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 720mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN4035L-13 FAQ
1.How can I place an order for DMN4035L-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN4035L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN4035L-13 reliable?
The price and inventory of DMN4035L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4035L-13 is usually 5 days.
3.What payment methods are accepted for DMN4035L-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4035L-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN4035L-13?
DMN4035L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN4035L-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN4035L-13?
For technical support, including DMN4035L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4035L-13 requirements.
6.How does Aetrix verify that DMN4035L-13 is sourced from the original manufacturer or authorized distributors?
All DMN4035L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4035L-13 meets industry standards.
7.What is the process for return or replacement of DMN4035L-13?
All DMN4035L-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4035L-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN4035L-13 part is unused and in its original packaging.
Return procedure for DMN4035L-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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