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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN4036LK3-13

Name: DMN4036LK3-13
Brand: Diodes Incorporated
SKU: DMN4036LK3-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN4036LK3-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMN4036LK3-13.pdf

Description:: MOSFET N-CH 40V 8.5A TO252-3

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Product details

Overview

DMN4036LK3-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in TO252-3L package, with R_DS(on) = 36 mΩ @ V_GS = 10 V and 61 mΩ @ V_GS = 4.5 V, rated for 12.2 A continuous drain current at T_A = 25°C. It delivers low conduction loss and fast switching (t_r = 11.7 ns, t_f = 9.5 ns), optimized for DC-DC converters and LED backlighting power stages.

For engineers reviewing the DMN4036LK3-13 datasheet, DMN4036LK3-13 pinout, DMN4036LK3-13 application, or DMN4036LK3-13 equivalent, key selection criteria include its AEC-Q101 qualification, body diode recovery performance (Q_rr = 926 nC), thermal resistance (R_θJA = 30.3 °C/W on 50 mm × 50 mm 2 oz FR4), and gate charge profile (Q_g = 9.2 nC @ V_GS = 10 V).

Technical Context

This MOSFET employs planar silicon process technology to achieve balanced R_DS(on) and switching speed, supporting high-frequency synchronous rectification in buck and boost topologies. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables reliable turn-on with standard 3.3 V and 5 V logic-level drivers.

The integrated body diode exhibits low forward voltage (V_SD = 0.96–1.1 V @ I_S = 12 A) and controlled reverse recovery (t_rr = 112 ns), reducing switching losses and EMI in hard-switched applications. Thermal design is supported by validated R_θJL = 3.1 °C/W to the drain lead.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche; supports 24 V input rail systems with margin.
R_DS(on) @ 10 V	36 mΩ - Enables ≤0.5 W conduction loss at 12 A, critical for thermally constrained PCB layouts.
R_DS(on) @ 4.5 V	61 mΩ - Ensures usable on-resistance with 3.3 V microcontroller GPIO drive in space-constrained designs.
Q_g @ 10 V	9.2 nC - Determines gate driver power requirement and switching transition time in PWM control loops.
t_r/t_f	11.7 ns / 9.5 ns - Supports >1 MHz switching frequencies while limiting dv/dt-induced shoot-through risk.
Q_rr	926 nC - Quantifies stored charge in body diode; directly impacts efficiency and snubber sizing in flyback/LLC.
R_θJA	30.3 °C/W - Measured on 50 mm × 50 mm 2 oz FR4; defines maximum power dissipation before exceeding 150 °C junction limit.

Pinout & Package

Package: TO252-3L (DPAK), surface-mount, single-sided copper pad layout per datasheet Figure 7; drain-connected tab provides low-inductance thermal path and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output terminal	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal and current handling.
G (Gate)	Control electrode for channel formation	High-impedance input requiring <9.2 nC charge; sensitive to ESD; requires gate resistor for ringing suppression.
S (Source)	Reference node for gate drive and current return	Common node for load current return and gate drive reference; ties to power ground plane.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability (−55 to 150 °C operation, HTRB, TC, UHAST), enabling use in under-hood DC-DC modules.
Low R_DS(on) at 4.5 V	61 mΩ ensures efficient operation with 3.3 V logic-level controllers without external level-shifting circuitry.
Fast body diode recovery	t_rr = 112 ns and Q_rr = 926 nC reduce reverse recovery losses and associated voltage spikes in synchronous rectifiers.
Green RoHS-compliant packaging	Mold compound meets halogen-free and antimony-free requirements per Diodes Inc.'s Green Policy, supporting environmental compliance programs.

Applications

LED Backlighting

Automotive DC-DC Converter

Use Scenario: High-current constant-current driver for LCD panel edge-lit LED strings in automotive infotainment displays.

IC Role / Device Role / Timing Role: Primary switch in boost converter topology regulating up to 12 A peak LED current.

Use Value: Low R_DS(on) minimizes heat generation in sealed display enclosures; fast switching enables compact inductor selection.

Use Scenario: Synchronous rectifier in 12 V-to-5 V/3.3 V buck converter powering ADAS camera modules.

IC Role / Device Role / Timing Role: Low-side switch operating at 500 kHz–1 MHz with gate driven by controller's complementary output.

Use Value: AEC-Q101 qualification ensures long-term reliability; low Q_g reduces driver IC loading and improves light-load efficiency.

Industrial Power Supply

USB-C PD Power Path

Use Scenario: Main switch in isolated flyback auxiliary supply delivering 12 V/1 A for PLC I/O module logic rails.

IC Role / Device Role / Timing Role: Primary-side switch controlling energy transfer; body diode conducts during off-time in discontinuous conduction mode.

Use Value: Controlled Q_rr prevents voltage overshoot across transformer primary; R_θJL = 3.1 °C/W enables direct mounting to heatsink via drain tab.

Use Scenario: Load switch in USB-C power delivery path managing 20 V/3 A input to portable device battery charging circuit.

IC Role / Device Role / Timing Role: High-side or low-side power path FET enabling/disabling VBUS with minimal voltage drop and fast response.

Use Value: 40 V rating accommodates full USB PD 3.0 range; low R_DS(on) at 4.5 V allows direct MCU control without gate driver.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN4036LH-7	Same die, TO263-2L (D²PAK) package; R_θJA = 25.5 °C/W on 50 mm × 50 mm 2 oz FR4; higher thermal mass.	Better suited for higher-power (>15 W) applications where board space permits larger footprint and improved thermal performance.	Select when thermal budget is tighter than PCB area constraints; requires rework of pad layout and assembly process.
SI2302DS-T1-GE3	30 V rating, R_DS(on) = 55 mΩ @ 4.5 V, Q_g = 4.2 nC; SOT-23 package; no AEC-Q101 qualification.	Limited to ≤12 V input systems; unsuitable for automotive or industrial environments requiring extended temperature or reliability validation.	Choose only for cost-sensitive, non-automotive consumer applications below 30 V with <3 A load current.

Compared with DMN4036LK3-13, DMN4036LH-7 offers superior thermal performance but larger footprint, while SI2302DS-T1-GE3 trades voltage rating, qualification, and current capability for ultra-compact size and lower gate drive demand-making each suitable only within distinct thermal, reliability, and system-voltage boundaries.

Availability

DMN4036LK3-13 is available at Aetrix Electronics and suitable for LED backlighting, automotive DC-DC converters, and industrial power supplies requiring stable component supply, AEC-Q101 compliance, and consistent TO252-3L sourcing.

Supply support for DMN4036LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

The DMN4036LK3 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive subsystems and industrial power conversion.

FAQ

What is the maximum continuous drain current at 100°C ambient temperature?

At T_A = 100°C, the DMN4036LK3-13 supports 5.2 A continuous drain current when mounted on a 50 mm × 50 mm 2 oz FR4 PCB, derived from its 4.12 W power dissipation rating and 30.3 °C/W R_θJA, with linear derating applied above 25°C ambient.

Does this MOSFET require a gate driver for 3.3 V microcontroller operation?

No external gate driver is required: the device's V_GS(th) range (1.0–3.0 V) and R_DS(on) = 61 mΩ @ 4.5 V ensure robust turn-on with 3.3 V logic, though a 10 Ω series gate resistor is recommended to dampen ringing during fast switching transitions.

Is the drain tab electrically isolated from the PCB copper pour?

No-the drain (D) terminal is internally connected to the exposed metal tab, which must be soldered directly to a PCB copper pour serving as both thermal sink and current return path; isolation requires insulating thermal interface material and careful layout to avoid short circuits.

How does the body diode's reverse recovery performance impact synchronous rectifier design?

With Q_rr = 926 nC and t_rr = 112 ns, the body diode introduces measurable recovery loss during dead-time transitions; designers must synchronize gate timing to minimize overlap and may add small RC snubbers across drain-source to suppress voltage spikes in high-dI/dt conditions.

DMN4036LK3-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 453 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.12W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMN4036LK3-13 FAQ

1.How can I place an order for DMN4036LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN4036LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN4036LK3-13 reliable?

The price and inventory of DMN4036LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN4036LK3-13 is usually 5 days.

3.What payment methods are accepted for DMN4036LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN4036LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN4036LK3-13?

DMN4036LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN4036LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN4036LK3-13?

For technical support, including DMN4036LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN4036LK3-13 requirements.

6.How does Aetrix verify that DMN4036LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMN4036LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN4036LK3-13 meets industry standards.

7.What is the process for return or replacement of DMN4036LK3-13?

All DMN4036LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN4036LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN4036LK3-13 part is unused and in its original packaging.

Return procedure for DMN4036LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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