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Diodes Incorporated DMN5040LSS-13
- Part No.:
- DMN5040LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN5040LSS-13.pdf
- Description:
- MOSFET N-CH 50V 5.2A 8SO T&R 2
- Quantity:
- Payment:
- Shipping:
Inventory:4,561
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Product details
Overview
DMN5040LSS from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SO-8 package, delivering 40 mΩ RDS(ON) at VGS = 10 V and 5.2 A continuous drain current at TA = +25°C. It features low input capacitance (836 pF), fast switching (tD(ON) = 3.1 ns), and AEC-Q101 qualification-designed for high-efficiency DC-DC converters and motor control circuits.
For engineers reviewing the DMN5040LSS datasheet, DMN5040LSS pinout, DMN5040LSS application, or DMN5040LSS equivalent, key selection criteria include its 40 mΩ on-resistance at 10 V gate drive, 77 °C/W thermal resistance with enhanced pad layout, SO-8 footprint compatibility, and AEC-Q101 reliability validation for automotive-grade power stages.
Technical Context
This MOSFET employs planar trench-gate technology to balance low conduction loss and fast switching performance. Its 50 V VDSS, ±20 V VGSS, and 13 A avalanche current rating support robust operation in unidirectional power switches and synchronous rectifier topologies.
The device integrates an intrinsic body diode with 0.7–1.2 V forward voltage at 1 A, and exhibits gate charge values of 6.5 nC (VGS = 4.5 V) and 14.5 nC (VGS = 10 V), enabling efficient gate driver sizing for 3.3 V or 5 V logic-level control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - Maximum blocking voltage before breakdown; supports 24 V and 36 V bus systems with margin. |
| RDS(ON) | 40 mΩ @ VGS = 10 V - Enables ≤210 mW conduction loss at 5.2 A, critical for thermally constrained PCB layouts. |
| ID (continuous) | 5.2 A @ TA = +25°C - Sustains full-load current in compact SO-8 packages without forced air cooling. |
| Ciss | 836 pF - Low input capacitance reduces gate drive power and improves switching efficiency above 500 kHz. |
| tD(ON) | 3.1 ns - Short turn-on delay enables precise timing control in synchronous buck and half-bridge PWM stages. |
| RθJA | 77 °C/W - Achieved with 1-inch² copper pad; allows ~1.6 W dissipation before exceeding 150°C junction limit. |
| Qg (10 V) | 14.5 nC - Determines minimum gate driver peak current (e.g., ≥1.5 A for 10 ns rise time) in high-frequency designs. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, dual-gull-wing lead frame). Molded plastic case with matte tin annealed terminals; UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for all four internal die cells; tied to PCB ground plane for thermal and EMI control. |
| 5, 6, 7, 8 | Drain (D) | Parallel-connected drain terminals; handle full load current path and dissipate heat via exposed copper pad under package body. |
| Gate (G) | Control terminal | Single gate pad (pin 1 side); requires <15 Ω series resistance to damp ringing during 10 V switching transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 60 mΩ - Enables direct drive from 3.3 V/5 V microcontrollers without level-shifting circuitry. |
| AEC-Q101 qualified | Stress-tested per automotive reliability standards - suitable for under-hood motor drivers and lighting modules. |
| Green compound & RoHS | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - meets EU ELV and JGPSSI requirements. |
| Fast body diode recovery | tRR = 9.4 ns, QRR = 3.7 nC - Minimizes reverse-recovery losses in synchronous rectification and flyback snubbers. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
|
Use Scenario: Brushed DC motor H-bridge driver in automotive seat adjusters and HVAC actuators. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation at 20–50 kHz. Use Value: 40 mΩ RDS(ON) limits I²R loss to <110 mW at 1.6 A stall current, reducing heatsink need in sealed enclosures. |
Use Scenario: Synchronous rectifier in 12 V → 3.3 V buck converter for infotainment SoC power rails. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve conversion efficiency by 3–5%. Use Value: 60 mΩ RDS(ON) at 4.5 V gate drive enables >92% efficiency at 3 A output with minimal gate drive overhead. |
| LED Backlighting | Power Management Functions |
|
Use Scenario: Current sink for multi-string automotive LED headlamp modules with PWM dimming. IC Role / Device Role / Timing Role: High-side or low-side constant-current switch operating at 1–2 kHz dimming frequency. Use Value: Fast 3.1 ns tD(ON) ensures accurate duty-cycle fidelity and eliminates visible flicker at low brightness levels. |
Use Scenario: Load switch for USB-C port power delivery sequencing in industrial docking stations. IC Role / Device Role / Timing Role: Controlled inrush limiter and hot-swap protection element with soft-start capability. Use Value: 13 A pulsed avalanche rating withstands transient overloads during connector mating events without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN5040LSD-13 | Same die, but SO-8 package with exposed drain pad (enhanced thermal pad); RθJA = 50 °C/W vs. 77 °C/W. | Better suited for >2 W continuous dissipation; requires modified PCB land pattern with thermal via array. | Select when junction temperature must stay below 125°C under 4 A steady-state load without airflow. |
| NTMFS5C428NT1G | 40 V VDSS, 3.6 mΩ RDS(ON) @ 10 V, PowerPAK SO-8; higher current rating (120 A pulsed) but larger footprint. | Targeted at high-current server VRMs; not AEC-Q101 qualified and lacks automotive stress screening. | Choose only for non-automotive, high-efficiency 12 V input supplies where ultra-low RDS(ON) outweighs qualification needs. |
Compared with DMN5040LSS, DMN5040LSD-13 offers superior thermal performance at the cost of PCB redesign, while NTMFS5C428NT1G trades automotive reliability for lower conduction loss in non-automotive infrastructure applications.
Availability
DMN5040LSS is available at Aetrix Electronics and suitable for motor control, DC-DC converters, and LED backlighting requiring stable component supply across automotive, industrial, and consumer electronics programs.
Supply support for DMN5040LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the US.
The DMN5040LSS belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V power switching in engine control, body electronics, and ADAS subsystems.
FAQ
Is DMN5040LSS suitable for 3.3 V logic-level gate drive?
Yes-its RDS(ON) is specified at 60 mΩ with VGS = 4.5 V, and typical VGS(TH) ranges from 1.0 V to 3.0 V. At 3.3 V gate drive, it delivers ~3.5 A continuous current with RDS(ON) ≈ 75 mΩ, making it viable for microcontroller-driven loads up to 2 A without external level shifting.
What is the maximum safe operating area (SOA) limitation at 100 µs pulse width?
Per Figure 12, the SOA curve shows a DC limit of 5.2 A at VDS = 10 V, and a 100 µs pulse limit of 25 A at VDS = 5 V. This corresponds to a single-pulse energy limit of ~125 mJ, constrained by both avalanche capability (EAS = 8 mJ) and thermal inertia-pulse operation must remain within the bounded region to avoid second-breakdown.
Does DMN5040LSS require a gate resistor for stability?
Yes-a 10–15 Ω series gate resistor is recommended to suppress high-frequency oscillation caused by gate-drain capacitance (Crss = 28 pF) interacting with PCB trace inductance. Without damping, ringing can exceed ±20 V on the gate, risking overvoltage damage or false turn-on during fast dV/dt transients.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = 0.7–1.2 V at 1 A and tRR = 9.4 ns, outperforming standard silicon diodes but with higher forward drop than 0.4 V Schottkys. Its advantage lies in co-packaged integration-eliminating layout parasitics and enabling synchronous rectification without external diode placement or routing delays.
DMN5040LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 836 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN5040LSS-13 FAQ
1.How can I place an order for DMN5040LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN5040LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN5040LSS-13 reliable?
The price and inventory of DMN5040LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN5040LSS-13 is usually 5 days.
3.What payment methods are accepted for DMN5040LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN5040LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN5040LSS-13?
DMN5040LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN5040LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN5040LSS-13?
For technical support, including DMN5040LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN5040LSS-13 requirements.
6.How does Aetrix verify that DMN5040LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMN5040LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN5040LSS-13 meets industry standards.
7.What is the process for return or replacement of DMN5040LSS-13?
All DMN5040LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN5040LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN5040LSS-13 part is unused and in its original packaging.
Return procedure for DMN5040LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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